CN101528813B - 含新戊硅烷的组合物及其制备方法 - Google Patents

含新戊硅烷的组合物及其制备方法 Download PDF

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Publication number
CN101528813B
CN101528813B CN200780039179XA CN200780039179A CN101528813B CN 101528813 B CN101528813 B CN 101528813B CN 200780039179X A CN200780039179X A CN 200780039179XA CN 200780039179 A CN200780039179 A CN 200780039179A CN 101528813 B CN101528813 B CN 101528813B
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CN
China
Prior art keywords
neopentasilane
silane
composition
mixture
tetrakis
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CN200780039179XA
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English (en)
Chinese (zh)
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CN101528813A (zh
Inventor
J·P·坎纳迪
X·周
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanda Optoelectronic Semiconductor Materials Co ltd
Jiangsu Nata Opto Electronic Material Co Ltd
DDP Specialty Electronic Materials US 9 LLC
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Dow Corning Corp
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Silicon Compounds (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN200780039179XA 2006-10-24 2007-08-29 含新戊硅烷的组合物及其制备方法 Active CN101528813B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US85395806P 2006-10-24 2006-10-24
US60/853,958 2006-10-24
PCT/US2007/019165 WO2008051328A1 (en) 2006-10-24 2007-08-29 Composition comprising neopentasilane and method of preparing same

Publications (2)

Publication Number Publication Date
CN101528813A CN101528813A (zh) 2009-09-09
CN101528813B true CN101528813B (zh) 2011-10-26

Family

ID=38896166

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200780039179XA Active CN101528813B (zh) 2006-10-24 2007-08-29 含新戊硅烷的组合物及其制备方法

Country Status (7)

Country Link
US (1) US8147789B2 (https=)
EP (1) EP2076558B8 (https=)
JP (1) JP5103480B2 (https=)
KR (1) KR101506136B1 (https=)
CN (1) CN101528813B (https=)
TW (1) TWI412530B (https=)
WO (1) WO2008051328A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008025260B4 (de) 2008-05-27 2010-03-18 Rev Renewable Energy Ventures, Inc. Halogeniertes Polysilan und thermisches Verfahren zu dessen Herstellung
DE102008042934A1 (de) * 2008-10-17 2010-04-22 Wacker Chemie Ag Verfahren zur Herstellung von Neopentasilanen
DE102009027194A1 (de) 2009-06-25 2010-12-30 Wacker Chemie Ag Verfahren zur Herstellung von Dodecahalogenneopentasilanen
DE102009053804B3 (de) 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
TWI559372B (zh) 2010-04-06 2016-11-21 薄膜電子Ａｓａ公司 磊晶結構、其形成方法及含此結構之元件
DE102010062984A1 (de) * 2010-12-14 2012-06-14 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Halogen- und Hydridosilane
DE102010063823A1 (de) * 2010-12-22 2012-06-28 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102011005387A1 (de) 2011-03-10 2012-09-13 Wacker Chemie Ag Verfahren zur Reduzierung des Aluminiumgehaltes von Neopentasilan
TW201300459A (zh) * 2011-03-10 2013-01-01 Dow Corning 用於抗反射塗層的聚矽烷矽氧烷（ｐｏｌｙｓｉｌａｎｅｓｉｌｏｘａｎｅ）樹脂
DE102012224202A1 (de) 2012-12-21 2014-07-10 Evonik Industries Ag Verfahren zum Hydrieren höherer Halogen-haltiger Silanverbindungen
TWI634073B (zh) * 2013-09-05 2018-09-01 道康寧公司 2,2,4,4-四矽基五矽烷及其組成物、方法及用途
US11091649B2 (en) 2013-09-05 2021-08-17 Jiangsu Nata Opto-Electronic Materials Co. Ltd. 2,2,4,4-tetrasilylpentasilane and its compositions, methods and uses
DE102014018435A1 (de) * 2014-12-10 2016-06-16 Silicon Products Bitterfeld GmbH&CO.KG Verfahren zur Gewinnung von Hexachlordisilan aus in Prozessabgasströmen enthaltenen Gemischen von Chlorsilanen
US11117807B2 (en) * 2017-06-23 2021-09-14 Jiangsu Nata Opto-Electronic Materials Co. Ltd. Method of making aluminum-free neopentasilane
WO2019005571A1 (en) * 2017-06-29 2019-01-03 Dow Silicones Corporation Synthesis of 1,1,1-trichlorodisilane
KR20190101001A (ko) 2018-02-22 2019-08-30 박계균 주열식 가설 흙막이 벽체의 시공방법
EP3587348B1 (en) * 2018-06-29 2021-08-11 Evonik Operations GmbH Partially hydrogenated chlorosilanes and methods for preparing same by selective hydrogenation
JP7580983B2 (ja) * 2020-09-08 2024-11-12 株式会社日本触媒 環状水素化ポリシラン化合物の製造方法
JP7621162B2 (ja) * 2021-03-31 2025-01-24 株式会社日本触媒 環状水素化シラン化合物の製造方法
CN115417413B (zh) * 2022-08-31 2024-01-09 南大光电半导体材料有限公司 一种新戊硅烷中间体制备方法及其应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002080244A2 (en) * 2001-02-12 2002-10-10 Asm America, Inc. Improved process for deposition of semiconductor films
CN1392862A (zh) * 2000-08-02 2003-01-22 三菱综合材料多晶硅股份有限公司 生产六氯乙硅烷的方法
WO2004036631A2 (en) * 2002-10-18 2004-04-29 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US20040152287A1 (en) * 2003-01-31 2004-08-05 Sherrill Adrian B. Deposition of a silicon film
CN1705767A (zh) * 2002-10-18 2005-12-07 应用材料有限公司 采用硅化合物进行的含硅层沉积

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760792B2 (ja) 1984-05-16 1995-06-28 キヤノン株式会社 堆積膜の形成方法
JPS6191010A (ja) 1984-10-09 1986-05-09 Canon Inc 堆積膜形成法
JP3517934B2 (ja) * 1994-03-24 2004-04-12 昭和電工株式会社 シリコン膜の形成方法
EP0902030B1 (en) * 1997-08-27 2002-10-02 Dow Corning Corporation Compounds containing tetradecachlorocyclohexasilane dianion
JPH11260729A (ja) * 1998-01-08 1999-09-24 Showa Denko Kk 高次シランの製造法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1392862A (zh) * 2000-08-02 2003-01-22 三菱综合材料多晶硅股份有限公司 生产六氯乙硅烷的方法
WO2002080244A2 (en) * 2001-02-12 2002-10-10 Asm America, Inc. Improved process for deposition of semiconductor films
WO2004036631A2 (en) * 2002-10-18 2004-04-29 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
CN1705767A (zh) * 2002-10-18 2005-12-07 应用材料有限公司 采用硅化合物进行的含硅层沉积
US20040152287A1 (en) * 2003-01-31 2004-08-05 Sherrill Adrian B. Deposition of a silicon film

Also Published As

Publication number Publication date
JP2010507559A (ja) 2010-03-11
JP5103480B2 (ja) 2012-12-19
CN101528813A (zh) 2009-09-09
EP2076558B8 (en) 2018-08-01
TW200821322A (en) 2008-05-16
KR20090079908A (ko) 2009-07-22
US8147789B2 (en) 2012-04-03
EP2076558A1 (en) 2009-07-08
KR101506136B1 (ko) 2015-03-26
TWI412530B (zh) 2013-10-21
WO2008051328A1 (en) 2008-05-02
US20100176338A1 (en) 2010-07-15
EP2076558B1 (en) 2018-04-18

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CP03 Change of name, title or address

Address after: michigan

Patentee after: DOW CORNING Corp.

Address before: Michigan

Patentee before: DOW CORNING Corp.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210618

Address after: 67 Pingsheng Road, Shengpu Town, Suzhou Industrial Park, Suzhou City, Jiangsu Province

Patentee after: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd.

Address before: Delaware, USA

Patentee before: DDP special electronic materials 9 Co.,Ltd.

Effective date of registration: 20210618

Address after: 239000, 117 Xincheng Avenue, Shitan Industrial Park, Shizi Town, Quanjiao County, Chuzhou City, Anhui Province

Patentee after: Nanda optoelectronic semiconductor materials Co.,Ltd.

Address before: No. 67, Pingsheng Road, Shengpu Town, Suzhou Industrial Park, Suzhou City, Jiangsu Province

Patentee before: JIANGSU NATA OPTO-ELECTRONIC MATERIAL Co.,Ltd.

Effective date of registration: 20210618

Address after: Delaware, USA

Patentee after: DDP special electronic materials 9 Co.,Ltd.

Address before: michigan

Patentee before: DOW CORNING Corp.