CN101521199B - 硅衬底及其制造方法 - Google Patents

硅衬底及其制造方法 Download PDF

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Publication number
CN101521199B
CN101521199B CN2009100083376A CN200910008337A CN101521199B CN 101521199 B CN101521199 B CN 101521199B CN 2009100083376 A CN2009100083376 A CN 2009100083376A CN 200910008337 A CN200910008337 A CN 200910008337A CN 101521199 B CN101521199 B CN 101521199B
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silicon substrate
silicon
atoms
carbon
less
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CN101521199A (zh
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栗田一成
表秀一
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Sumco Corp
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Sumco Corp
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    • H10P36/03—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H10P36/20—
    • H10P52/402—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN2009100083376A 2008-02-29 2009-02-26 硅衬底及其制造方法 Active CN101521199B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008049847A JP5568837B2 (ja) 2008-02-29 2008-02-29 シリコン基板の製造方法
JP2008-049847 2008-02-29
JP2008049847 2008-02-29

Publications (2)

Publication Number Publication Date
CN101521199A CN101521199A (zh) 2009-09-02
CN101521199B true CN101521199B (zh) 2012-05-23

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CN2009100083376A Active CN101521199B (zh) 2008-02-29 2009-02-26 硅衬底及其制造方法

Country Status (6)

Country Link
US (1) US7915145B2 (enExample)
EP (1) EP2096667B1 (enExample)
JP (1) JP5568837B2 (enExample)
KR (1) KR101073419B1 (enExample)
CN (1) CN101521199B (enExample)
TW (1) TWI395843B (enExample)

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JP5343371B2 (ja) 2008-03-05 2013-11-13 株式会社Ｓｕｍｃｏ シリコン基板とその製造方法
JP2010034128A (ja) * 2008-07-25 2010-02-12 Sumco Corp ウェーハの製造方法及び該方法により得られたウェーハ
DE102010027411A1 (de) * 2010-07-15 2012-01-19 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Substrat und Verfahren zur Herstellung einer Halbleiterschichtenfolge
KR20120032329A (ko) 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자
JP5825931B2 (ja) * 2011-08-25 2015-12-02 グローバルウェーハズ・ジャパン株式会社 固体撮像素子の製造方法
US8713966B2 (en) 2011-11-30 2014-05-06 Corning Incorporated Refractory vessels and methods for forming same
CN103094216A (zh) * 2013-01-11 2013-05-08 无锡华润上华科技有限公司 一种nor闪存器件的退火工艺及nor闪存器件
CN103077927A (zh) * 2013-01-11 2013-05-01 无锡华润上华科技有限公司 一种nor闪存器件的退火工艺及nor闪存器件
CN103065944B (zh) * 2013-01-14 2015-06-24 武汉新芯集成电路制造有限公司 一种便携式器件晶圆的制造方法
US8907494B2 (en) 2013-03-14 2014-12-09 International Business Machines Corporation Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures
JP6260100B2 (ja) * 2013-04-03 2018-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6020342B2 (ja) 2013-05-10 2016-11-02 信越半導体株式会社 シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法
DE112015002599B4 (de) * 2014-06-02 2025-12-18 Sumco Corporation Silicium-Wafer und Verfahren zu dessen Herstellung
JP6366383B2 (ja) * 2014-06-27 2018-08-01 株式会社ディスコ 加工装置
DE102016209008B4 (de) 2016-05-24 2019-10-02 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinem Silizium
JP6531729B2 (ja) * 2016-07-19 2019-06-19 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
US10326013B2 (en) 2016-11-23 2019-06-18 Microchip Technology Incorporated Method of forming a field-effect transistor (FET) or other semiconductor device with front-side source and drain contacts
US10522367B2 (en) * 2017-03-06 2019-12-31 Qualcomm Incorporated Gettering layer formation and substrate
TWI673834B (zh) * 2018-09-26 2019-10-01 矽品精密工業股份有限公司 電子封裝件及其製法
DE102020132289A1 (de) * 2020-12-04 2022-06-09 Vishay Semiconductor Gmbh Verfahren zum herstellen einer fotodiode
FR3122524B1 (fr) 2021-04-29 2025-02-21 St Microelectronics Crolles 2 Sas Procédé de fabrication de puces semiconductrices

Citations (1)

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US5571373A (en) * 1994-05-18 1996-11-05 Memc Electronic Materials, Inc. Method of rough polishing semiconductor wafers to reduce surface roughness

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JP3384506B2 (ja) 1993-03-30 2003-03-10 ソニー株式会社 半導体基板の製造方法
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Also Published As

Publication number Publication date
KR20090093854A (ko) 2009-09-02
CN101521199A (zh) 2009-09-02
EP2096667A3 (en) 2011-06-15
KR101073419B1 (ko) 2011-10-17
US7915145B2 (en) 2011-03-29
US20090218661A1 (en) 2009-09-03
JP5568837B2 (ja) 2014-08-13
EP2096667B1 (en) 2013-05-08
EP2096667A2 (en) 2009-09-02
TWI395843B (zh) 2013-05-11
JP2009206431A (ja) 2009-09-10
TW200944626A (en) 2009-11-01

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