CN101509122B - 一种碘化亚铜半导体膜的微波等离子体制备方法 - Google Patents
一种碘化亚铜半导体膜的微波等离子体制备方法 Download PDFInfo
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- CN101509122B CN101509122B CN2009101318167A CN200910131816A CN101509122B CN 101509122 B CN101509122 B CN 101509122B CN 2009101318167 A CN2009101318167 A CN 2009101318167A CN 200910131816 A CN200910131816 A CN 200910131816A CN 101509122 B CN101509122 B CN 101509122B
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- Prior art keywords
- microwave
- ion
- cuprous iodide
- plasma
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021595 Copper(I) iodide Inorganic materials 0.000 title claims abstract description 21
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000010849 ion bombardment Methods 0.000 claims abstract 2
- 238000002360 preparation method Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims description 4
- 229940006461 iodide ion Drugs 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- -1 argon ion Chemical class 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 abstract description 9
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052740 iodine Inorganic materials 0.000 abstract description 8
- 239000011630 iodine Substances 0.000 abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000498 cooling water Substances 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 235000011167 hydrochloric acid Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 235000019198 oils Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229960004839 potassium iodide Drugs 0.000 description 1
- 235000007715 potassium iodide Nutrition 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-L thiosulfate(2-) Chemical compound [O-]S([S-])(=O)=O DHCDFWKWKRSZHF-UHFFFAOYSA-L 0.000 description 1
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Abstract
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Application Number | Priority Date | Filing Date | Title |
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CN2009101318167A CN101509122B (zh) | 2009-04-08 | 2009-04-08 | 一种碘化亚铜半导体膜的微波等离子体制备方法 |
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CN2009101318167A CN101509122B (zh) | 2009-04-08 | 2009-04-08 | 一种碘化亚铜半导体膜的微波等离子体制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN101509122A CN101509122A (zh) | 2009-08-19 |
CN101509122B true CN101509122B (zh) | 2012-01-25 |
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CN2009101318167A Expired - Fee Related CN101509122B (zh) | 2009-04-08 | 2009-04-08 | 一种碘化亚铜半导体膜的微波等离子体制备方法 |
Country Status (1)
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CN (1) | CN101509122B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112552625A (zh) * | 2020-12-16 | 2021-03-26 | 上海万夫新材料科技有限公司 | 一种抗粘贴防涂鸦可反复使用的透明膜及其制备方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101775580B (zh) * | 2010-01-05 | 2012-07-04 | 青岛科技大学 | 一种氮化铝薄膜的微波等离子体制备方法 |
CN101775579B (zh) * | 2010-01-05 | 2013-03-06 | 青岛科技大学 | 一种二氧化钛薄膜的微波等离子体制备方法 |
CN103779447B (zh) * | 2014-02-12 | 2015-05-13 | 许昌学院 | 一种室温下气-固相原位反应制备单晶硅/碘化亚铜本体异质结薄膜的方法 |
CN104078724B (zh) * | 2014-07-04 | 2016-08-24 | 芜湖航飞科技股份有限公司 | 一种等离子体数字移相器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3505131A (en) * | 1967-10-02 | 1970-04-07 | Xerox Corp | Process for the preparation of a cuprous iodide conductive film |
CN1034285A (zh) * | 1987-09-16 | 1989-07-26 | 株式会社半导体能源研究所 | 形成超导氧化物材料的方法和装置 |
-
2009
- 2009-04-08 CN CN2009101318167A patent/CN101509122B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3505131A (en) * | 1967-10-02 | 1970-04-07 | Xerox Corp | Process for the preparation of a cuprous iodide conductive film |
CN1034285A (zh) * | 1987-09-16 | 1989-07-26 | 株式会社半导体能源研究所 | 形成超导氧化物材料的方法和装置 |
Non-Patent Citations (1)
Title |
---|
JP特开平8-209390A 1996.08.13 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112552625A (zh) * | 2020-12-16 | 2021-03-26 | 上海万夫新材料科技有限公司 | 一种抗粘贴防涂鸦可反复使用的透明膜及其制备方法 |
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CN101509122A (zh) | 2009-08-19 |
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