CN101490192A - 用于抛光低介电材料的抛光液 - Google Patents

用于抛光低介电材料的抛光液 Download PDF

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Publication number
CN101490192A
CN101490192A CNA2007800271849A CN200780027184A CN101490192A CN 101490192 A CN101490192 A CN 101490192A CN A2007800271849 A CNA2007800271849 A CN A2007800271849A CN 200780027184 A CN200780027184 A CN 200780027184A CN 101490192 A CN101490192 A CN 101490192A
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China
Prior art keywords
polishing fluid
polishing
acid
weight percent
percent concentration
Prior art date
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CNA2007800271849A
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English (en)
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CN101490192B (zh
Inventor
宋伟红
陈国栋
荆建芬
姚颖
宋成兵
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Anji Microelectronics Shanghai Co Ltd
Anji Microelectronics Co Ltd
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Anji Microelectronics Shanghai Co Ltd
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Priority to CN2007800271849A priority Critical patent/CN101490192B/zh
Publication of CN101490192A publication Critical patent/CN101490192A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本发明公开了一种用于抛光低介电材料的抛光液，该抛光液包括磨料和水，其特征在于：还包括一种或多种金属螯合剂、唑类成膜剂和氧化剂。本发明的抛光液能在较低的压力下具有较高的低介电材料的去除速率以及对其它材料的合适的抛光选择比，抛光后的表面光洁度较好。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN2007800271849A 2006-08-25 2007-07-09 用于抛光低介电材料的抛光液 Active CN101490192B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2007800271849A CN101490192B (zh) 2006-08-25 2007-07-09 用于抛光低介电材料的抛光液

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN200610030457.2 2006-08-25
CNA2006100304572A CN101130665A (zh) 2006-08-25 2006-08-25 用于抛光低介电材料的抛光液
CN2007800271849A CN101490192B (zh) 2006-08-25 2007-07-09 用于抛光低介电材料的抛光液
PCT/CN2007/002102 WO2008025209A1 (fr) 2006-08-25 2007-07-09 Pâte de polissage pour matériau faiblement diélectrique

Publications (2)

Publication Number Publication Date
CN101490192A true CN101490192A (zh) 2009-07-22
CN101490192B CN101490192B (zh) 2012-09-19

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CN2007800271849A Active CN101490192B (zh) 2006-08-25 2007-07-09 用于抛光低介电材料的抛光液

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WO (1) WO2008025209A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111378374A (zh) * 2018-12-28 2020-07-07 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
TWI729219B (zh) * 2016-12-28 2021-06-01 大陸商安集微電子科技(上海)股份有限公司 一種用於阻擋層平坦化的化學機械拋光液
CN114456717A (zh) * 2017-03-29 2022-05-10 富士胶片电子材料美国有限公司 抛光组合物及其使用方法

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CN101451049A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
JP5423669B2 (ja) 2008-04-23 2014-02-19 日立化成株式会社 研磨剤及びこの研磨剤を用いた基板の研磨方法
CN101665662A (zh) * 2008-09-05 2010-03-10 安集微电子科技(上海)有限公司 一种化学机械抛光液
EP2489714B1 (en) 2009-10-13 2015-08-12 LG Chem, Ltd. Slurry composition for cmp, and polishing method
CN102337079B (zh) * 2010-07-23 2015-04-15 安集微电子（上海）有限公司 一种化学机械抛光液
CN102453439B (zh) * 2010-10-22 2015-07-29 安集微电子（上海）有限公司 一种化学机械抛光液
CN102408837B (zh) * 2011-11-22 2014-06-04 清华大学 一种可提高硅晶片抛光精度的抛光组合物及其制备方法
CN103146306B (zh) * 2011-12-07 2016-12-28 安集微电子（上海）有限公司 一种tsv阻挡层抛光液
US8821215B2 (en) * 2012-09-07 2014-09-02 Cabot Microelectronics Corporation Polypyrrolidone polishing composition and method
CN104449564A (zh) * 2013-09-23 2015-03-25 中芯国际集成电路制造(上海)有限公司 单分散研磨液及其制备方法、无机氧化物溶胶制备方法
CN103820079B (zh) * 2014-02-21 2014-12-10 无锡研奥电子科技有限公司 用于氮化镓材料的研磨组合物及其制备方法
EP3433327B1 (en) 2016-03-22 2020-05-20 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates
CN105950021B (zh) * 2016-07-19 2018-08-17 苏州溶煋新材料科技有限公司 一种用于蓝宝石基板抛光的氧化铝基抛光液及其制备方法
CN106830378B (zh) * 2017-02-23 2020-11-10 山东化友水处理技术有限公司 一种灰水阻垢剂的制备和筛选测试方法
CN106883769A (zh) * 2017-04-17 2017-06-23 黄美香 一种硅溶胶抛光液
CN108812678B (zh) * 2018-07-05 2020-12-25 河南省科学院能源研究所有限公司 一种复合型缓蚀杀菌剂
CN110744362A (zh) * 2019-10-17 2020-02-04 江苏吉星新材料有限公司 一种蓝宝石晶片研磨抛光方法
CN112872003A (zh) * 2021-04-15 2021-06-01 四川农业大学 一种淋洗修复矿山污染土壤中铜的方法
CN115710464A (zh) * 2022-11-11 2023-02-24 博力思(天津)电子科技有限公司 一种低表面粗糙度的氧化硅介质层化学机械抛光液

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4391715B2 (ja) * 1999-08-13 2009-12-24 キャボット マイクロエレクトロニクス コーポレイション 化学機械的研磨系
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI729219B (zh) * 2016-12-28 2021-06-01 大陸商安集微電子科技(上海)股份有限公司 一種用於阻擋層平坦化的化學機械拋光液
CN114456717A (zh) * 2017-03-29 2022-05-10 富士胶片电子材料美国有限公司 抛光组合物及其使用方法
CN111378374A (zh) * 2018-12-28 2020-07-07 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN111378374B (zh) * 2018-12-28 2022-05-13 安集微电子科技（上海）股份有限公司 一种化学机械抛光液

Also Published As

Publication number Publication date
CN101490192B (zh) 2012-09-19
CN101130665A (zh) 2008-02-27
WO2008025209A1 (fr) 2008-03-06

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