CN101490734B - 用于抛光低介电材料的抛光液 - Google Patents
用于抛光低介电材料的抛光液 Download PDFInfo
- Publication number
- CN101490734B CN101490734B CN200780027182XA CN200780027182A CN101490734B CN 101490734 B CN101490734 B CN 101490734B CN 200780027182X A CN200780027182X A CN 200780027182XA CN 200780027182 A CN200780027182 A CN 200780027182A CN 101490734 B CN101490734 B CN 101490734B
- Authority
- CN
- China
- Prior art keywords
- polishing
- polishing fluid
- abrasive silica
- silica
- water surplus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 220
- 239000003989 dielectric material Substances 0.000 title claims abstract description 33
- 239000002002 slurry Substances 0.000 title abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 172
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 82
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 8
- 239000012530 fluid Substances 0.000 claims description 121
- 239000004411 aluminium Substances 0.000 claims description 70
- 229910052782 aluminium Inorganic materials 0.000 claims description 70
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 70
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 22
- 239000011149 active material Substances 0.000 claims description 20
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 17
- -1 ammonium radical ion Chemical class 0.000 claims description 10
- OTRAYOBSWCVTIN-UHFFFAOYSA-N OB(O)O.OB(O)O.OB(O)O.OB(O)O.OB(O)O.N.N.N.N.N.N.N.N.N.N.N.N.N.N.N Chemical compound OB(O)O.OB(O)O.OB(O)O.OB(O)O.OB(O)O.N.N.N.N.N.N.N.N.N.N.N.N.N.N.N OTRAYOBSWCVTIN-UHFFFAOYSA-N 0.000 claims description 7
- 150000001412 amines Chemical group 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- 239000013543 active substance Substances 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000007800 oxidant agent Substances 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 239000003112 inhibitor Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 150000003384 small molecules Chemical class 0.000 claims description 4
- 239000012752 auxiliary agent Substances 0.000 claims description 3
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 34
- 239000000758 substrate Substances 0.000 abstract description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 abstract description 5
- 125000001453 quaternary ammonium group Chemical group 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 229940077464 ammonium ion Drugs 0.000 abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 description 43
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 39
- 235000002906 tartaric acid Nutrition 0.000 description 39
- 239000011975 tartaric acid Substances 0.000 description 39
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 20
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 18
- 239000003082 abrasive agent Substances 0.000 description 15
- 229920000604 Polyethylene Glycol 200 Polymers 0.000 description 9
- 235000006408 oxalic acid Nutrition 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 150000003863 ammonium salts Chemical class 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明公开了一种用于抛光低介电材料的抛光液,该抛光液包括掺铝二氧化硅磨料和水,其特征在于:还包括含铵根离子或季铵类的小分子活性物质。本发明的抛光液对低介电材料CDO以及TEOS、SiON等材料的抛光具有促进作用,但对钽、铜的抛光速率无明显的影响,因此可以大大提供衬底的抛光选择性,并且本发明的抛光液可以大大降低衬底表面的刮痕、腐蚀、点蚀等衬底表面缺陷问题。
Description
技术领域
本发明涉及一种抛光液,尤其涉及一种用于抛光低介电材料的抛光液。
技术背景
在集成电路制造中,互连技术的标准在提高,一层上面又沉积一层,使得在衬底表面形成了不规则的形貌。现有技术中使用的一种平坦化方法就是化学机械抛光(CMP),CMP工艺就是使用一种含磨料的混合物和抛光垫去抛光一集成电路表面。在典型的化学机械抛光方法中,将衬底直接与旋转抛光垫接触,用一载重物在衬底背面施加压力。在抛光期间,垫片和操作台旋转,同时在衬底背面保持向下的力,将磨料和化学活性溶液(通常称为抛光液或抛光浆料)涂于垫片上,该抛光液与正在抛光的薄膜发生化学反应开始进行抛光过程。
CMP抛光液主要包括磨料、化学试剂和溶剂等。磨料主要为各种无机或有机颗粒,如二氧化硅、氧化铝、二氧化锆、氧化铈、氧化铁、聚合物颗粒和/或它们的混合物等。CMP抛光液的溶剂主要为水或醇类。而化学试剂是用来控制抛光速率和抛光选择比、改善抛光表面性能以及提高抛光液的稳定性,包括氧化剂、络合剂、缓蚀剂和/或表面活性剂等。
在一些公开专利中,铵盐和季铵类物质被用来调节一些非金属物质的抛光速率,如在CN 1498931A中,在二氧化硅为磨料的抛光液中,水溶性季铵盐被用来提高多晶硅的抛光速率和改善抛光液的稳定性,其多晶硅膜抛光速率与氮化物膜抛光速率的比率达到50。如USP 6,046,112,该抛光液包括ZrO2磨料、表面活性剂、TMAH或TBAH、和水,其对SOG具有较高的抛光速率和较高的抛光选择性,抛光速率达到4000/min,抛光选择性高达8,但是其使用ZrO2磨料,价格昂贵。在USP 7018560中,含有2~15个碳链长度的有机季胺盐用于增加TEOS的抛光速率,同时降低SiC、SiCN、Si3N4和SiCO等材料的抛光速率。然而以上专利中,铵盐和季铵类物质并没有用于提高低介电材料CDO的抛光速率。
随着集成电路复杂程度的增加和器件尺寸的减小,一些含有Si、C、O的低介电材料逐渐被应用于集成电路,以提高未来集成电路的开合能力。低介电材料包括掺碳二氧化硅(CDO)、碳氧化硅(SiOC)和有机硅玻璃(OSG)等,而掺碳二氧化硅(CDO)是目前应用较广的一种低介电材料。这些低介电材料在未来将取代二氧化硅(如TEOS、FSG、SOG等),构成集成电路中的绝缘层。
发明概要
本发明的目的是提供一种用于抛光低介电材料的抛光液,该抛光液用于提高低介电材料的抛光速率,本发明的抛光液包括掺铝二氧化硅磨料和水,其特征在于:还包括含铵根离子或季铵类的小分子活性物质。由于这类小分子活性物质用于本发明的抛光液中能够形成铵根离子或季铵离子,从而可以提高低介电材料的抛光速率,但对钽、铜的抛光速率无明显的影响,从而可以提高抛光选择性。
在本发明中,术语“小分子活性物质”是指分子量Mw<500的含铵根离子的活性物质或季铵类的活性物质。
在本发明中,所述的活性物质可以为氨水、各种铵盐、各种季铵盐、各种季铵碱,较佳地为氨水、氨基酸、五硼酸铵、酒石酸铵、四甲基氢氧化铵(TMAH)、四丁基氢氧化铵(TBAH)和/或四丁基四氟硼酸铵,以及具有类似结构的铵盐或季铵类等物质,优选四丁基氢氧化铵和四丁基四氟硼酸铵。
所述的活性物质的用量较佳地为0.001~0.5%,更佳地为0.001~0.2%。所述的掺铝二氧化硅磨料的浓度可以为现有技术中抛光集成电路衬底的抛光液中给出的各种浓度,较佳地为1~20%,更佳地为2~15%,水为余量。以上浓度均指占整个抛光液的重量百分比。
所述的掺铝二氧化硅磨料为溶胶型掺铝二氧化硅分散液,这种溶胶型磨料分散液可以大大降低衬底表面的刮痕、腐蚀、点蚀等衬底表面缺陷问题。
所述的溶胶型掺铝二氧化硅分散液的pH值较佳地为2~7。
在本发明中,所述的掺铝二氧化硅磨料的粒径较佳地是5~500nm,更佳地是5~100nm,最优选20~80nm。
本发明的抛光液的pH值较佳地为2~7。
本发明的抛光液还可以包括现有技术中的各种添加剂,如阻蚀剂、氧化剂、速率增助剂、表面活性剂和/或其他助剂等等。
所述的阻蚀剂可以是抛光剂领域中使用的各种阻蚀剂,较佳地为苯并三唑(BTA);所述的氧化剂可以是抛光剂领域中使用的各种氧化剂,较佳地为过氧化氢;所述的表面活性剂可以是抛光剂领域中使用的各种表面活性剂,较佳地为聚乙烯乙二醇(PEG)和/或聚丙烯酸类(PAA)。
本发明的抛光液较佳地抛光下列材料,如:掺碳二氧化硅(CDO);本发明的抛光液也可以用于抛光二氧化硅(TEOS)、SiON、Ta或Cu等材料。
在本发明中,术语“低介电材料”是指介电常数低于3.0的材料。
本发明的积极进步效果在于:本发明的抛光液对CDO、TEOS、SiON等材料的抛光具有促进作用,但对钽、铜的抛光速率无明显的影响,因此可以大大提高衬底的抛光选择性。并且本发明的抛光液可以大大降低衬底表面的刮痕、腐蚀、点蚀等衬底表面缺陷问题。
附图说明
图1为含有不同活性物质的抛光液抛光低介电材料的抛光速率图;
图2为含有各种添加剂的抛光液对低介电材料抛光速率的影响图;
图3为活性物质的浓度对低介电材料抛光速率的影响图;
图4为不同的磨料浓度对低介电材料抛光速率的影响图;
图5为本发明的抛光液对不同低介电材料的抛光速率影响图;
图6为本发明的抛光液的pH对低介电材料的抛光速率影响图;
图7为不同磨料对低介电材料的抛光速率影响图;
图8为磨料的粒径对低介电材料的抛光速率影响图。
发明内容
实施例1
对比抛光液1’掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、水余量、pH=3;
抛光液1掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、氨水(NH4OH)0.1%、水余量、pH=3;
抛光液2掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、五硼酸铵0.1%、水余量、pH=3;
抛光液3掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、酒石酸铵0.1%、水余量、pH=3;
抛光液4掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、四丁基四氟硼酸铵0.02%、水余量、pH=3;
抛光液5掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、四甲基氢氧化铵(TMAH)0.025%、水余量、pH=3;
抛光液6掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、四丁基氢氧化铵(TBAH)0.01%、水余量、pH=3。
抛光材料:BD材料;抛光条件:1psi,抛光盘转速70rpm,抛光垫Politex,抛光液流速100ml/min,Logitech PM5Polisher。
实施例2
对比抛光液7’掺铝二氧化硅磨料(45nm)6%、水余量、pH=3;
抛光液7掺铝二氧化硅磨料(45nm)6%、五硼酸铵0.1%、水余量、pH=3;
对比抛光液8’掺铝二氧化硅磨料(45nm)6%、酒石酸0.2%、水余量、pH=3;
抛光液8掺铝二氧化硅磨料(45nm)6%、酒石酸0.2%、五硼酸铵0.1%、水余量、pH=3;
对比抛光液9’掺铝二氧化硅磨料(45nm)6%、酒石酸0.2%、BTA 0.2%、H2O20.5%、水余量、pH=3;
抛光液9掺铝二氧化硅磨料(45nm)6%、酒石酸0.2%、BTA 0.2%、H2O20.5%、五硼酸铵0.1%、水余量、pH=3;
对比抛光液10’掺铝二氧化硅磨料(45nm)6%、酒石酸0.2%、BTA 0.2%、H2O20.5%、PEG2000.2%、水余量、pH=3;
抛光液10掺铝二氧化硅磨料(45nm)6%、酒石酸0.2%、BTA 0.2%、H2O20.5%、PEG200 0.2%、五硼酸铵0.1%、水余量、pH=3。
抛光材料:BD材料;抛光条件:1psi,抛光盘转速70rpm,抛光垫Politex,抛光液流速100ml/min,Logitech PM5Polisher。
结果如图2所示:本发明的含有活性物质的抛光液可以显著地提高低介电材料BD的抛光速率,在含有各种添加剂下可以更好地提高抛光速率。
实施例3
对比抛光液11’掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O2 0.5%、水余量、pH=3;
抛光液11(1)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O2 0.5%、四甲基氢氧化铵0.0125%、水余量、pH=3;
抛光液11(2)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O2 0.5%、四甲基氢氧化铵0.025%、水余量、pH=3;
抛光液11(3)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O2 0.5%、四甲基氢氧化铵0.05%、水余量、pH=3;
抛光液11(4)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O2 0.5%、四甲基氢氧化铵0.125%、水余量、pH=3;
抛光液11(5)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O2 0.5%、四甲基氢氧化铵0.2%、水余量、pH=3。
抛光材料:BD材料和TEOS材料;抛光条件:1psi,抛光盘转速70rpm,抛光垫Politex,抛光液流速100ml/min,Logitech PM5Polisher。
结果如图3所示:本发明的抛光液中添加活性物质后,不仅能够提高对低介电材料BD的抛光速率,而且同时对TEOS的抛光有加速作用。随着活性物质用量的增加,本发明的抛光液对低介电材料BD和TEOS材料抛光的促进作用先逐渐增强,达到特定值后逐渐减弱。说明只有当活性物质的用量为一特定值时,才能对低介电材料BD的抛光速率有促进作用。否则,过量的活性物质反而会抑制BD和TEOS的抛光。
实施例4
对比抛光液12’(1)掺铝二氧化硅磨料(45nm)0.5%、水余量、pH=3;
对比抛光液12’(2)掺铝二氧化硅磨料(45nm)2%、水余量、pH=3;
对比抛光液12’(3)掺铝二氧化硅磨料(45nm)5%、水余量、pH=3;
对比抛光液12’(4)掺铝二氧化硅磨料(45nm)10%、水余量、pH=3;
对比抛光液12’(5)掺铝二氧化硅磨料(45nm)15%、水余量、pH=3;
对比抛光液12’(6)掺铝二氧化硅磨料(45nm)20%、水余量、pH=3。
抛光液12(1)掺铝二氧化硅磨料(45nm)0.5%、四丁基氢氧化铵0.007%、水余量、pH=3;
抛光液12(2)掺铝二氧化硅磨料(45nm)2%、四丁基氢氧化铵0.007%、水余量、pH=3;
抛光液12(3)掺铝二氧化硅磨料(45nm)5%、四丁基氢氧化铵0.007%、水余量、pH=3;
抛光液12(4)掺铝二氧化硅磨料(45nm)10%、四丁基氢氧化铵0.007%、水余量、pH=3;
抛光液12(5)掺铝二氧化硅磨料(45nm)15%、四丁基氢氧化铵0.007%、水余量、pH=3;
抛光液12(6)掺铝二氧化硅磨料(45nm)20%、四丁基氢氧化铵0.007%、水余量、pH=3。
抛光材料:BD材料;抛光条件:1psi,抛光盘转速70rpm,抛光垫Politex,抛光液流速100ml/min,Logitech PM5Polisher。
结果如图4所示:当掺铝二氧化硅的浓度为0.5%~20%之间时,相对于不含有活性物质的抛光液,本发明的含有活性物质的抛光液可以显著增加低介电材料BD的抛光速率。
实施例5
对比抛光液13’掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、水余量、pH=3;
抛光液13掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、四甲基氢氧化铵0.025%、水余量、pH=3。
抛光材料:BD材料、TEOS材料、SiON材料、Ta材料和Cu材料;抛光条件:1psi,抛光盘转速70rpm,抛光垫Politex,抛光液流速100ml/min,Logitech PM5Polisher。
结果如图5所示:相对于不含有活性物质的抛光液,本发明的含有活性物质的抛光液可以改善各种非金属材料的抛光速率,如BD材料、TEOS材料以及SiON材料,但是对金属如Ta和Cu的抛光速率没有太大的影响,因此本发明的抛光液可以提高衬底的抛光选择性。
实施例6
对比抛光液14’(1)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、水余量、pH=2;
对比抛光液14’(2)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、水余量、pH=3;
对比抛光液14’(3)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、水余量、pH=5;
对比抛光液14’(4)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、水余量、pH=7;
抛光液14(1)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、四甲基氢氧化铵0.025%、水余量、pH=2;
抛光液14(2)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、四甲基氢氧化铵0.025%、水余量、pH=3;
抛光液14(3)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、四甲基氢氧化铵0.025%、水余量、pH=5;
抛光液14(4)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、四甲基氢氧化铵0.025%、水余量、pH=7。
抛光条件:1psi,抛光盘转速70rpm,抛光垫Politex,抛光液流速100ml/min,Logitech PM5Polisher。
结果如图6所示:当抛光液的pH值为2~7时,相对于不含有活性物质的抛光液,本发明的含有活性物质的抛光液可以显著增加低介电材料BD的抛光速率。
实施例7
对比抛光液15’(1’)二氧化硅磨料(70nm,PL-3,Fuso Company)7%、酒石酸0.1%、PEG200 0.2%、BTA 0.2%、H2O2 0.5%、水余量、pH=3;
对比抛光液15’(1)二氧化硅磨料(70nm,PL-3,Fuso Company)7%、酒石酸0.1%、PEG200 0.2%、BTA 0.2%、H2O2 0.5%、四甲基氢氧化铵0.025%、水余量、pH=3;
对比抛光液15’(2’)Al2O3包覆的二氧化硅磨料(Al2O3-coated silica)(35nm)7%、酒石酸0.1%、PEG200 0.2%、BTA 0.2%、H2O2 0.5%、水余量、pH=3;
对比抛光液15’(2)Al2O3包覆的二氧化硅磨料(Al2O3-coated silica)(35nm)7%、酒石酸0.1%、PEG200 0.2%、BTA 0.2%、H2O2 0.5%、四甲基氢氧化铵0.025%、水余量、pH=3;
对比抛光液15’(3’)ZrO2包覆的二氧化硅磨料(ZrO2-coated silica)(20nm)7%、酒石酸0.1%、PEG200 0.2%、BTA 0.2%、H2O2 0.5%、水余量、pH=3;
对比抛光液15’(3)ZrO2包覆的二氧化硅磨料(ZrO2-coated silica)(20nm)7%、酒石酸0.1%、PEG200 0.2%、BTA 0.2%、H2O2 0.5%、四甲基氢氧化铵0.025%、水余量、pH=3;
对比抛光液15’(4’)气相氧化铝磨料(Fumed silica)(初始粒径15nm)7%、酒石酸0.1%、PEG200 0.2%、BTA 0.2%、H2O2 0.5%、水余量、pH=3;
对比抛光液15’(4)气相氧化铝磨料(Fumed silica)(初始粒径15nm)7%、酒石酸0.1%、PEG200 0.2%、BTA 0.2%、H2O2 0.5%、四甲基氢氧化铵0.025%、水余量、pH=3;
对比抛光液15(5’)掺铝氧化铝磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、水余量、pH=3;
抛光液15(5)掺铝二氧化硅磨料(45nm)7%、酒石酸0.1%、PEG2000.2%、BTA 0.2%、H2O20.5%、四甲基氢氧化铵0.025%、水余量、pH=3。
抛光材料:BD材料;抛光条件:1psi,抛光盘转速70rpm,抛光垫Politex,抛光液流速100ml/min,Logitech PM5Polisher 。
结果如图7所示:在以掺铝二氧化硅为磨料的抛光液中加入活性物质后,低介电材料BD的抛光速率得到明显的提高。而在其它一些磨料的抛光液中加入活性物质后,低介电材料BD的抛光速率反而会有所下降。
实施例8
对比抛光液16’掺铝二氧化硅磨料(20nm)10%、草酸0.2%、BTA 0.2%、H2O20.3%、水余量、pH=3;
抛光液16掺铝二氧化硅磨料(20nm)10%、草酸0.2%、BTA 0.2%、H2O20.3%、四丁基氢氧化铵0.01%、水余量、pH=3;
对比抛光液17’掺铝二氧化硅磨料(50nm)10%、草酸0.2%、BTA 0.2%、H2O20.3%、水余量、pH=3;
抛光液17掺铝二氧化硅磨料(50nm)10%、草酸0.2%、BTA 0.2%、H2O20.3%、四丁基氢氧化铵0.01%、水余量、pH=3;
对比抛光液18’掺铝二氧化硅磨料(80nm)10%、草酸0.2%、BTA 0.2%、H2O20.3%、水余量、pH=3;
抛光液18掺铝二氧化硅磨料(80nm)10%、草酸0.2%、BTA 0.2%、H2O20.3%、四丁基氢氧化铵0.01%、水余量、pH=3。
抛光材料:BD材料;抛光条件:1psi,抛光盘旋转速率70rpm,抛光垫Politex,抛光液流速100ml/min,Logitech PM5Polisher。
结果如图8所示:20~80nm的掺铝二氧化硅磨料都适合于本发明,而且随着磨料粒径的增大,抛光速率上升,因此大于80nm的掺铝二氧化硅磨料也适合于本发明。
本发明所使用的原料和试剂均为市售产品,而且掺铝二氧化硅磨料均指溶胶型掺铝二氧化硅磨料分散液。
Claims (10)
1.一种用于抛光低介电材料的抛光液,该抛光液包括掺铝二氧化硅磨料和水,其特征在于:其还包括含铵根离子或季铵类的小分子活性物质,所述小分子活性物质的百分含量为0.001~0.5%、分子量为MW<500。
2.如权利要求1所述的抛光液,其特征在于:所述的活性物质包括氨水、五硼酸铵、酒石酸铵、四甲基氢氧化铵、四丁基氢氧化铵和/或四丁基四氟硼酸铵。
3.如权利要求1所述的抛光液,其特征在于:所述的掺铝二氧化硅磨料的浓度为1~20%。
4.如权利要求1~3任一项所述的抛光液,其特征在于:所述的掺铝二氧化硅磨料为溶胶型掺铝二氧化硅分散液。
5.如权利要求4所述的抛光液,其特征在于:所述的溶胶型掺铝二氧化硅分散液的pH值为2~7。
6.如权利要求4所述的抛光液,其特征在于:所述的掺铝二氧化硅磨料的粒径是5~500nm。
7.如权利要求6所述的抛光液,其特征在于:所述的掺铝二氧化硅磨料的粒径是5~100nm。
8.如权利要求1~3任一项所述的抛光液,其特征在于:该抛光液的pH值为2~7。
9.如权利要求1~3任一项所述的抛光液,其特征在于:所述的抛光液还包括阻蚀剂、氧化剂、速率增助剂和/或表面活性剂。
10.如权利要求1~3任一项所述的抛光液,其特征在于:所述的低介电材料是掺碳二氧化硅。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200780027182XA CN101490734B (zh) | 2006-07-21 | 2007-07-09 | 用于抛光低介电材料的抛光液 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200610029268.3 | 2006-07-21 | ||
CNA2006100292683A CN101108952A (zh) | 2006-07-21 | 2006-07-21 | 用于抛光低介电材料的抛光液 |
CN200780027182XA CN101490734B (zh) | 2006-07-21 | 2007-07-09 | 用于抛光低介电材料的抛光液 |
PCT/CN2007/002103 WO2008011796A1 (fr) | 2006-07-21 | 2007-07-09 | Suspension épaisse de polissage pour matériau à faible constante diélectrique |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101490734A CN101490734A (zh) | 2009-07-22 |
CN101490734B true CN101490734B (zh) | 2012-07-04 |
Family
ID=38981136
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006100292683A Pending CN101108952A (zh) | 2006-07-21 | 2006-07-21 | 用于抛光低介电材料的抛光液 |
CN200780027182XA Expired - Fee Related CN101490734B (zh) | 2006-07-21 | 2007-07-09 | 用于抛光低介电材料的抛光液 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006100292683A Pending CN101108952A (zh) | 2006-07-21 | 2006-07-21 | 用于抛光低介电材料的抛光液 |
Country Status (2)
Country | Link |
---|---|
CN (2) | CN101108952A (zh) |
WO (1) | WO2008011796A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101451049A (zh) * | 2007-11-30 | 2009-06-10 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
BRPI0821635A2 (pt) | 2007-12-21 | 2015-06-16 | Sezmi Corp | Métodos para transmitir, fornecer, receber, reparar, apresentar, capturar, combinar e extrair conteúdo de programação de áudio e visual, para selecionar conteúdo de programação de áudio e visual para capurar, para visualizar conteúdo capturado de programação de áudio e visual, para remover conteúdo, para visualizar conteúdo de propaganda e para extrair e inserir conteúdo. |
CN102093817A (zh) * | 2009-12-11 | 2011-06-15 | 安集微电子(上海)有限公司 | 一种用于钽阻挡抛光的化学机械抛光液 |
CN103146307B (zh) * | 2013-03-28 | 2014-12-10 | 天津理工大学 | 一种化学机械抛光用纳米抛光液 |
TWI625372B (zh) * | 2016-01-06 | 2018-06-01 | 卡博特微電子公司 | 低介電基板之研磨方法 |
BR102019026860A2 (pt) | 2019-12-16 | 2021-06-22 | José Oswaldo Da Silva | Equipamento e método para o desaguamento e compactação de lodos, rejeitos, materiais pastosos e suspensões |
CN115247026A (zh) * | 2021-04-26 | 2022-10-28 | 福建晶安光电有限公司 | 一种蓝宝石抛光液及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1334849A (zh) * | 1998-09-24 | 2002-02-06 | 联合讯号公司 | 用于低介电常数材料的氧化抛光淤浆 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7022255B2 (en) * | 2003-10-10 | 2006-04-04 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition with nitrogen containing polymer and method for use |
US20070037892A1 (en) * | 2004-09-08 | 2007-02-15 | Irina Belov | Aqueous slurry containing metallate-modified silica particles |
-
2006
- 2006-07-21 CN CNA2006100292683A patent/CN101108952A/zh active Pending
-
2007
- 2007-07-09 CN CN200780027182XA patent/CN101490734B/zh not_active Expired - Fee Related
- 2007-07-09 WO PCT/CN2007/002103 patent/WO2008011796A1/zh active Search and Examination
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1334849A (zh) * | 1998-09-24 | 2002-02-06 | 联合讯号公司 | 用于低介电常数材料的氧化抛光淤浆 |
Also Published As
Publication number | Publication date |
---|---|
CN101490734A (zh) | 2009-07-22 |
CN101108952A (zh) | 2008-01-23 |
WO2008011796A1 (fr) | 2008-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101490734B (zh) | 用于抛光低介电材料的抛光液 | |
CN101490192B (zh) | 用于抛光低介电材料的抛光液 | |
KR101144419B1 (ko) | 금속-함유 기판의 화학 기계적 평탄화를 위한 방법 및 조성물 | |
KR100949250B1 (ko) | 금속 cmp 슬러리 조성물 및 이를 이용한 연마 방법 | |
US9275899B2 (en) | Chemical mechanical polishing composition and method for polishing tungsten | |
EP1909312A1 (en) | Abrasive and process for producing semiconductor integrated-circuit unit | |
US20030168627A1 (en) | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers | |
US20080032606A1 (en) | Method for controlling the dishing problem associated with chemical-mechanical planarization (cmp) during manufacture of copper multilayer interconnection structures in ultra large-scale integrated circuits (ulsi) | |
CN1609156A (zh) | 用于抛光半导体层的组合物 | |
KR20110094253A (ko) | 텅스텐 함유 기판의 화학 기계적 평탄화 방법 | |
US20080020680A1 (en) | Rate-enhanced CMP compositions for dielectric films | |
JP6327326B2 (ja) | 金属用研磨液及び研磨方法 | |
US7988878B2 (en) | Selective barrier slurry for chemical mechanical polishing | |
US20080171441A1 (en) | Polishing compound and method for producing semiconductor integrated circuit device | |
CN102051128B (zh) | 一种化学机械抛光液 | |
KR20100065304A (ko) | 금속용 연마액 및 연마 방법 | |
WO2014089905A1 (zh) | 一种金属化学机械抛光浆料及其应用 | |
KR20050043666A (ko) | 배리어를 제거하기 위한 조성물 및 방법 | |
CN101130666B (zh) | 一种含有混合磨料的低介电材料抛光液 | |
WO2009070967A1 (fr) | Liquide de polissage chimico-mécanique | |
JP2008124377A (ja) | 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット | |
CN101225282B (zh) | 一种低介电材料抛光液 | |
JP2005082649A (ja) | 研磨用スラリー | |
CN102115635A (zh) | 一种含有混合磨料的低介电材料抛光液 | |
JP4740622B2 (ja) | 化学的機械的研磨スラリー |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20150709 |
|
EXPY | Termination of patent right or utility model |