WO2008011796A1 - Suspension épaisse de polissage pour matériau à faible constante diélectrique - Google Patents

Suspension épaisse de polissage pour matériau à faible constante diélectrique Download PDF

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Publication number
WO2008011796A1
WO2008011796A1 PCT/CN2007/002103 CN2007002103W WO2008011796A1 WO 2008011796 A1 WO2008011796 A1 WO 2008011796A1 CN 2007002103 W CN2007002103 W CN 2007002103W WO 2008011796 A1 WO2008011796 A1 WO 2008011796A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polishing liquid
aluminum
silica abrasive
doped silica
Prior art date
Application number
PCT/CN2007/002103
Other languages
English (en)
Chinese (zh)
Inventor
Jery Guodong Chen
Peter Weihong Song
Judy Jianfen Jing
Sunny Chun Xu
Yuan Gu
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd filed Critical Anji Microelectronics (Shanghai) Co., Ltd
Priority to CN200780027182XA priority Critical patent/CN101490734B/zh
Publication of WO2008011796A1 publication Critical patent/WO2008011796A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a polishing liquid, and more particularly to a polishing liquid for polishing a low dielectric material.
  • CMP chemical mechanical polishing
  • abrasive-containing mixture and a polishing pad to polish an integrated circuit surface.
  • the substrate is placed in direct contact with a rotating polishing pad and a load is applied to the back side of the substrate with a load.
  • the gasket and the table rotate while maintaining a downward force on the back of the substrate, applying abrasive and chemically active solutions (often referred to as polishing fluids or polishing slurries) to the gasket.
  • polishing fluids or polishing slurries abrasive and chemically active solutions
  • the C P polishing liquid mainly includes abrasives, chemicals, solvents, and the like.
  • the abrasive is mainly various inorganic or organic particles such as silica, alumina, zirconia, cerium oxide, iron oxide, polymer particles and/or mixtures thereof.
  • the solvent of the CMP polishing liquid is mainly water or an alcohol. Chemical reagents are used to control polishing rate and polishing selectivity, improve polishing surface performance, and improve the stability of the polishing solution, including oxidizing agents, complexing agents, corrosion inhibitors, and/or surfactants.
  • ammonium salts and quaternary ammonium species are used to adjust the polishing rate of some non-metallic materials.
  • a water-soluble quaternary ammonium salt is used in the polishing solution of silica as an abrasive.
  • the polishing rate of the polysilicon is improved and the stability of the polishing liquid is improved, and the ratio of the polishing rate of the polysilicon film to the polishing rate of the nitride film reaches 50.
  • the polishing liquid includes Zr0 2 abrasive, surfactant, TMAH or TBAH, and water, which have a higher polishing rate and higher polishing selectivity for SQG, polishing rate up to 4000 A/min, polishing selectivity up to 8, but using Zr0 2 Abrasive, expensive.
  • an organic quaternary ammonium salt having a length of from 2 to 15 carbon chains is used to increase the polishing rate of TEOS while reducing the polishing rate of materials such as SiC, SiCN, Si 3 N 4 and SiCO.
  • ammonium salts and quaternary ammonium species are not used to increase the polishing rate of the low dielectric material CDO.
  • Low dielectric materials include carbon-doped silicon dioxide (CDO), silicon oxycarbide (SiOC), and organosilicon glass (OSG), while carbon-doped silicon dioxide (CDO) is a widely used low dielectric material. . These low dielectric materials will replace silicon dioxide (such as TEOS, FSG, SOG, etc.) in the future to form an insulating layer in integrated circuits.
  • polishing liquid for polishing a low dielectric material for improving the polishing rate of a low dielectric material
  • the polishing liquid of the present invention comprising an aluminum-doped silica abrasive and water, characterized in that It is: It also includes small molecule active substances containing ammonium ions or quaternary ammonium salts. Since such a small molecule active material can be used in the polishing liquid of the present invention to form an ammonium ion or a quaternary ammonium ion, the polishing rate of the low dielectric material can be improved, but the polishing rate of bismuth and copper is not significantly affected. Polishing selectivity can be improved.
  • small molecule active material means an ammonium ion-containing active material or a quaternary ammonium-based active material having a molecular weight Mw ⁇ 500.
  • the active material may be ammonia water, various ammonium salts, various quaternary ammonium salts, and each a quaternary ammonium base, preferably ammonia, amino acid, ammonium pentaborate, ammonium tartrate, tetramethylammonium hydroxide
  • TMAH tetrabutylammonium hydroxide
  • TBAH tetrabutylammonium hydroxide
  • ammonium salt or a quaternary ammonium compound having a similar structure preferably tetrabutylammonium hydroxide and tetrabutylammonium tetrafluoroborate.
  • the active material is preferably used in an amount of 0.001 to 0.5%, more preferably 0.001 to 0.2%.
  • concentration of the aluminum-doped silica abrasive may be various concentrations given in the polishing liquid of the prior art polishing integrated circuit substrate, preferably from 1 to 20%, more preferably from 2 to 15%. , water is the balance. The above concentrations all refer to the weight percentage of the entire polishing liquid.
  • the aluminum-doped silica abrasive is a sol-type aluminum-doped silica dispersion.
  • the sol-type abrasive dispersion can greatly reduce the surface defects of the substrate such as scratches, corrosion, pitting and the like.
  • the pH of the sol-type aluminum-doped silica dispersion is preferably from 2 to 7.
  • the particle diameter of the aluminum-doped silica abrasive is preferably 5 to 500 nm, more preferably 5 to; LOOnm, most preferably 20 to 80 nm.
  • the polishing liquid of the present invention preferably has a pH of from 2 to 7.
  • the polishing liquid of the present invention may further include various additives in the prior art such as a corrosion inhibitor, an oxidizing agent, a rate increasing agent, a surfactant, and/or other auxiliary agents and the like.
  • the corrosion inhibitor may be various corrosion inhibitors used in the field of polishing agents, preferably benzotriazole (BTA); the oxidizing agent may be various oxidizing agents used in the field of polishing agents, preferably.
  • the polishing liquid of the present invention is preferably polished to a material such as carbon-doped silica (CDO); the polishing liquid of the present invention can also be used for polishing silica (TEOS), SiON, Ta or Cu.
  • CDO carbon-doped silica
  • low dielectric material means a material having a dielectric constant of less than 3.0.
  • the positive progress of the present invention is:
  • the polishing liquid of the present invention is for CDO, TEOS, SiON
  • the polishing of the materials has a promoting effect, but has no significant influence on the polishing rate of bismuth and copper, so that the polishing selectivity of the substrate can be greatly improved.
  • the polishing liquid of the present invention can greatly reduce the problem of substrate surface defects such as scratches, corrosion, pitting and the like on the surface of the substrate.
  • Figure 1 is a polishing rate diagram of a polishing liquid-polished low dielectric material containing different active materials
  • Figure 2 is a graph showing the effect of a polishing solution containing various additives on the polishing rate of a low dielectric material; Effect diagram of the polishing rate of the dielectric material;
  • Figure 4 is a graph showing the effect of different abrasive concentrations on the polishing rate of low dielectric materials
  • Figure 5 is a graph showing the effect of the polishing liquid of the present invention on the polishing rate of different low dielectric materials
  • FIG. 6 is a graph showing the influence of the pH of the polishing liquid of the present invention on the polishing rate of the low dielectric material
  • FIG. 7 is a graph showing the influence of the different abrasives on the polishing rate of the low dielectric material
  • Figure 8 is a graph showing the effect of the particle size of the abrasive on the polishing rate of the low dielectric material.
  • Polishing solution 3 with aluminum-doped silica abrasive (45nm) 7%, tartaric acid 0.1%, PEG200 0.2%. BTA O.2%, H 2 O 2 0.5%, ammonium tartrate 0.1%, water balance, pH 3 ;
  • TMAH tetramethylammonium hydroxide
  • Polishing material BD material; polishing conditions: lpsi, polishing disk speed 70 rpm, polishing pad Politex, polishing fluid flow rate 100 ml/min, Logitech PM5 Polisher o
  • the polishing liquid containing active material of the present invention can significantly improve the polishing rate of the low dielectric material BD, especially tetrabutylammonium hydroxide and tetrabutylammonium tetrafluoroborate, and the polishing rate reaches 600A. /min or more.
  • Polishing material BD material; polishing conditions: lpsi, polishing disk speed 70 rpm, polishing pad Politex, polishing fluid flow rate 100 ml/min, Logitech PM5 Polisher 0
  • the polishing liquid containing the active material of the present invention can remarkably improve the polishing rate of the low dielectric material BD, and can better 'improve the polishing rate with various additives.
  • Contrast polishing solution 1 ⁇ ⁇ aluminum silica abrasive (45nm) 7%, tartaric acid 0.1%, PEG200 0.2%, BTA O.2%, H 2 O 2 0.5%, water balance, pH 3;
  • Polishing material BD material and TEOS material; polishing conditions: lpsi, polishing disk speed 70 rpm, polishing pad Politex, polishing fluid flow rate 100 ml/min, Logitech PM5 Polisher o
  • the polishing liquid of the present invention After the active material is added to the polishing liquid of the present invention, not only the polishing rate of the low dielectric material BD but also the polishing of TEOS can be accelerated. As the amount of active material increases, the polishing liquid of the present invention gradually enhances the polishing effect of the low dielectric material BD and TEOS materials, and gradually decreases after reaching a certain value. Explain only when the amount of active substance is used When 02103 is a specific value, the polishing rate of the low dielectric material BD can be promoted. Otherwise, excessive active material will inhibit the polishing of BD and TEOS.
  • Polishing material BD material; polishing conditions: lpsi, polishing disk speed 70 rpm, polishing pad Politex, polishing solution flow rate 100 ml/min, Logitech PM5 Polisher 0
  • the active liquid-containing polishing liquid of the present invention can be significantly increased with respect to the polishing liquid containing no active material.
  • the polishing rate of the dielectric material BD is shown in Fig. 4:
  • Polishing materials BD material, TEOS material, SiON material, Ta material and Cu material; Polishing conditions: lpsi, polishing disk speed 70 rpm, polishing pad Politex, polishing liquid flow rate 100 ml/min, Logitech PM5 Polisher.
  • the polishing liquid containing the active material of the present invention can improve the polishing rate of various non-metal materials, such as BD material, TEOS material, and SiON material, but with respect to the metal, relative to the polishing liquid containing no active material.
  • the polishing rate of Ta and Cu does not have much influence, so the polishing liquid of the present invention can improve the polishing selectivity of the substrate.
  • Polishing conditions lpsi, polishing disk speed 70 rpm, polishing pad Politex, polishing fluid flow rate 1 OOml/min, Logitech PM5 Polisher.
  • the polishing liquid containing the active material of the present invention can significantly increase the polishing rate of the low dielectric material BD with respect to the polishing liquid containing no active material.
  • Comparative polishing liquid 15, (1,) silica abrasive (70 nm, PL-3, Fuso Company) 7%, tartaric acid 0.1%, PEG200 0.2%, ⁇ 0. 2%, ⁇ 2 0 2 0.5%, water balance , ⁇ 3;
  • Comparative polishing liquid 15, (3,) Zr0 2 coated silica abrasive (Zr0 2 -coated silica) (20 nm) 7%, tartaric acid 0.1%, PEG200 0.2%, BTA O.2%, H 2 0 2 0.5 %, water balance, pH 3 ; contrast polishing liquid 15, (3) Zr0 2 coated silica abrasive (Zr0 2 -coated silica) (20nm) 7%, tartaric acid 0.1%, PEG200 0.2%, BTAO. 2%, H 2 O 2 0.5%, tetramethylammonium hydroxide 07 002103
  • Polishing material BD material; polishing conditions: lpsi, polishing disk speed 70 rpm, polishing pad Politex, polishing fluid flow rate 100 ml/min, Logitech PM5 Polisher.
  • Comparative polishing liquid 16' aluminum-doped silica abrasive (20nm) 10%, oxalic acid 0.2%, BTA 0.2%, H 2 O 2 0.3%, water balance, pH 3;
  • Polishing material BD material; Polishing conditions: lpsi, polishing disk rotation rate 70 rpm, polishing pad Politex, polishing fluid flow rate 100 ml/min, Logitech PM5 Polisher.
  • the results are shown in Fig. 8.
  • the aluminum-doped silica abrasives of 20 to 80 nm are suitable for the present invention, and as the abrasive grain size increases, the polishing rate increases, so that the aluminum-silica abrasives larger than 80 nm are also suitable. this invention.
  • the materials and reagents used in the present invention are all commercially available products, and the sulphide silica abrasives are all referred to as sol-type aluminum-doped silica abrasive dispersions.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne une suspension épaisse de polissage comprenant de la silice dopée à l'AI et de l'eau pour matériau à faible constante diélectrique. La suspension épaisse est caractérisée en ce qu'elle contient également des micro-molécules actives qui sont des composés contenant un ion ammonium ou un ion ammonnium quaternaire. La suspension épaisse de polissage selon l'invention présente un effet bénéfique sur le polissage d'un matériau à faible constante diélectrique tel que CDO et TEOS ou SION, etc., alors qu'elle présente peu d'effet sur la vitesse de polissage de Ta et de Cu. Ainsi, elle peut améliorer considérablement la sélectivité de polissage de substrats. En outre, la suspension épaisse selon l'invention peut diminuer considérablement les défauts de surface tels que les rayures, la corrosion, l'érosion par piquage et analogue.
PCT/CN2007/002103 2006-07-21 2007-07-09 Suspension épaisse de polissage pour matériau à faible constante diélectrique WO2008011796A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200780027182XA CN101490734B (zh) 2006-07-21 2007-07-09 用于抛光低介电材料的抛光液

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2006100292683A CN101108952A (zh) 2006-07-21 2006-07-21 用于抛光低介电材料的抛光液
CN200610029268.3 2006-07-21

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WO2008011796A1 true WO2008011796A1 (fr) 2008-01-31

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8544048B2 (en) 2007-12-21 2013-09-24 Kustin Corp. System for content delivery
EP3838851A1 (fr) 2019-12-16 2021-06-23 Silva, José Oswaldo da Appareil et procédé de déshydratation et de compactage de boues, de déchets, de matériaux pâteux et de suspensions liquides
CN115247026A (zh) * 2021-04-26 2022-10-28 福建晶安光电有限公司 一种蓝宝石抛光液及其制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101451049A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
CN102093817A (zh) * 2009-12-11 2011-06-15 安集微电子（上海）有限公司 一种用于钽阻挡抛光的化学机械抛光液
CN103146307B (zh) * 2013-03-28 2014-12-10 天津理工大学 一种化学机械抛光用纳米抛光液
WO2017120396A1 (fr) * 2016-01-06 2017-07-13 Cabot Microelectronics Corporation Procédé de polissage d'un substrat à faible k

Citations (2)

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Publication number Priority date Publication date Assignee Title
WO2006028759A2 (fr) * 2004-09-08 2006-03-16 Praxair S. T. Technology, Inc Suspension aqueuse contenant des particules de silice modifiees par l'incorporation de metallate
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6270395B1 (en) * 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
WO2006028759A2 (fr) * 2004-09-08 2006-03-16 Praxair S. T. Technology, Inc Suspension aqueuse contenant des particules de silice modifiees par l'incorporation de metallate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8544048B2 (en) 2007-12-21 2013-09-24 Kustin Corp. System for content delivery
EP3838851A1 (fr) 2019-12-16 2021-06-23 Silva, José Oswaldo da Appareil et procédé de déshydratation et de compactage de boues, de déchets, de matériaux pâteux et de suspensions liquides
CN115247026A (zh) * 2021-04-26 2022-10-28 福建晶安光电有限公司 一种蓝宝石抛光液及其制备方法

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Publication number Publication date
CN101490734B (zh) 2012-07-04
CN101490734A (zh) 2009-07-22
CN101108952A (zh) 2008-01-23

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