WO2014059744A1 - Solution alcaline de polissage mécano-chimique - Google Patents

Solution alcaline de polissage mécano-chimique Download PDF

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Publication number
WO2014059744A1
WO2014059744A1 PCT/CN2013/000980 CN2013000980W WO2014059744A1 WO 2014059744 A1 WO2014059744 A1 WO 2014059744A1 CN 2013000980 W CN2013000980 W CN 2013000980W WO 2014059744 A1 WO2014059744 A1 WO 2014059744A1
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WO
WIPO (PCT)
Prior art keywords
polishing fluid
fluid according
polishing
acid
quaternary ammonium
Prior art date
Application number
PCT/CN2013/000980
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English (en)
Chinese (zh)
Inventor
王晨
何华锋
Original Assignee
安集微电子（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子（上海）有限公司 filed Critical 安集微电子（上海）有限公司
Publication of WO2014059744A1 publication Critical patent/WO2014059744A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Definitions

  • This invention relates to an alkaline chemical mechanical polishing liquid, and more particularly to an alkaline chemical mechanical polishing liquid for a barrier layer.
  • CMP Chemical mechanical polishing
  • the barrier layer is typically interposed between silicon dioxide and copper lines to block the diffusion of copper ions into the dielectric layer.
  • the copper above the barrier layer is first removed. Since the polishing speed of copper is very fast at this time, various defects (for example, butterfly defecting, and erosion erosion) are formed.
  • copper CMP is usually required to stop on the barrier layer, and then another special barrier polishing solution is removed to remove the barrier layer (such as germanium), and the butterfly defect polishing and erosion erosion are corrected to achieve a global flattened.
  • the polishing rate of copper by an acid barrier polishing liquid is easily adjusted by hydrogen peroxide, and the hydrogen peroxide is stable, but the polishing speed for silicon dioxide and germanium is slow;
  • the polishing rate of the alkaline barrier polishing liquid to copper is not easily adjusted by hydrogen peroxide, and the hydrogen peroxide is unstable, but the polishing speed of silica and TiN is faster.
  • US7241725 and US7300480 use imine, ruthenium, and iridium to increase the polishing rate of the barrier layer.
  • US7491252B2 uses cesium hydrochloride to increase the polishing rate of the barrier layer.
  • US7790618B2 uses an imine derivative and a polyethylene glycol sulfate surfactant for polishing the barrier layer.
  • the above patents increase the polishing speed of the barrier layer, but do not well protect the erosion of the thin line region.
  • CN101665664A The use of a quaternary ammonium salt cationic surfactant inhibits low dielectric materials (eg BD) polishing speed.
  • the cationic quaternary ammonium salt contains a long chain of C8 or higher, but most of the quaternary ammonium salt type cationic surfactant having a long chain of C8 or higher significantly inhibits the polishing rate of silica (OXIDE) and prevents polishing.
  • EP 2119353 A1 uses poly(methyl vinyl ether) for the polishing of barrier layers containing Low-K materials.
  • US 2008/0276543 A1 uses a mixture of formamidine, guanidine and polyvinylpyrrolidone (PVP) for the polishing of the barrier layer.
  • PVP polyvinylpyrrolidone
  • EP0373501 B1 discloses a fine polishing liquid which uses an organic polymer such as polyvinylpyrrolidone (PVP) to adjust the hydrodynamic properties of the polishing liquid, improve the flatness of the surface of the silicon wafer, and reduce defects.
  • PVP polyvinylpyrrolidone
  • this fine polishing liquid cannot be used for polishing containing metallic materials (copper, bismuth).
  • the technical problem to be solved by the present invention is to provide an alkaline chemical mechanical polishing liquid. While adjusting the polishing speed of various materials such as barrier layer, dielectric layer and copper, it can well protect the erosion of the thin line region, and the silicon wafer has a high global flatness.
  • an alkaline chemical mechanical polishing liquid comprising abrasive particles, an azole compound, a complexing agent, one or more selected from the group consisting of C1 to C4 quaternary ammonium bases, An oxidizing agent, a surfactant and water that regulate the flatness of the surface of the wafer.
  • the abrasive particles are gas phase SiO 2 and/or sol SiO 2 , preferably sol SiO 2 .
  • the abrasive particles have a concentration of 5 to 25 wt%.
  • the azole compound is selected from the group consisting of triazole and its derivatives, preferably BTA and/or TTA and derivatives thereof, of which TTA and its derivatives are preferred.
  • the azole compound has a mass percentage of 0.02 to 0.2% by weight.
  • the complexing agent is an amino acid, citric acid and/or an organic phosphonic acid.
  • the organic phosphonic acid is preferably hydroxyethylidene diphosphonic acid (HEDP) and/or 2-butylbutane-1, 2,
  • the organic acid has a mass percentage of 0.05 to 0.4% by weight. .
  • the C1 to C4 quaternary ammonium base is selected from one or more of TMAH, TBAH, butyltrimethylammonium hydroxide and tributylmethylammonium hydroxide, preferably TBAH.
  • the C1 to C4 quaternary ammonium base has a mass percentage of 0.05 to 1 wt%.
  • the oxidizing agent is hydrogen peroxide and a derivative thereof, preferably hydrogen peroxide.
  • the oxidizing agent has a mass percentage of 0.1 to 1% by weight.
  • the surfactant which adjusts the surface flatness of the silicon wafer is polyvinylpyrrolidone (PVP).
  • the polyvinylpyrrolidone (PVP) has a mass percentage of 0.01 to 1% by weight.
  • the polishing liquid has a pH of 9 to 12.
  • the polishing liquid further comprises a pH adjusting agent, wherein the pH adjusting agent is a base or an acid, wherein the base is KOH, and the acid is HNO 3 .
  • the polishing liquid as described above can be applied to the polishing barrier layer.
  • Polyvinylpyrrolidone can be used to adjust the flatness of the surface of the wafer.
  • the C1-C4 quaternary ammonium base can be used to effectively control the erosion of the thin line region of the copper wire.
  • the reagents, materials and products used in the present invention are commercially available.
  • the positive progress of the present invention is that -
  • the formula contains C1 ⁇ C4 quaternary ammonium base. Different from the quaternary ammonium salt surfactant containing C8 or above, it does not form bubbles and can also be used as an organic base. , adjust the pH value, better than KOH, and do not introduce metal ions. Summary of the invention
  • the polishing liquid was prepared in accordance with the ingredients of the respective examples in Table 1 and their ratios, and mixed uniformly.
  • TTA is methyl benzotriazole, commercially available
  • polishing liquid formulations in Table 1 were tested in accordance with the following experimental conditions.
  • Polishing conditions Mirra machine, fujibo pad, speed 93/87, polishing pressure: 1.5psL Slurry flow 200mL/min. Enter the above parameters in the Mirra machine, for 8 inch silicon dioxide wafer, BD wafer, copper silicon The wafer and the silicon wafer containing the thin line of copper wire were polished for 1 min, washed, dried, and tested to obtain the polishing results of Table 2.
  • Comparative Example 1, 2 It can be seen from Comparative Example 1, 2 that in the absence of quaternary ammonium base and PVP, the erosion of the thin wire region of the copper wire is severe, and the flatness of the surface of the silicon wafer is not good.
  • C1 ⁇ C4 quaternary ammonium base and PVP were added, and the erosion of the thin wire region of the copper wire was remarkably improved, and the effect of the global flattening of the silicon wafer was better.
  • the polishing liquid of the present invention can protect the erosion of the thin line region and improve the surface smoothness of the silicon wafer while adjusting the polishing speed of various materials such as silicon dioxide, barrier layer and copper. degree.
  • wt% of the present invention refers to the mass percentage.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention concerne une solution alcaline de polissage pour polir une couche barrière, contenant des particules de broyage, un composé azole, un alcali d'ammonium quaternaire en C1-C4, un oxydant, de l'eau, et un tensioactif pour ajuster la planéité de surface d'une tranche de silicium. La solution de polissage peut contrôler efficacement l'érosion d'une zone de fil de cuivre mince, et réaliser rapidement une planarisation globale.
PCT/CN2013/000980 2012-10-17 2013-08-22 Solution alcaline de polissage mécano-chimique WO2014059744A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210396145.9A CN103773244B (zh) 2012-10-17 2012-10-17 一种碱性化学机械抛光液
CN201210396145.9 2012-10-17

Publications (1)

Publication Number Publication Date
WO2014059744A1 true WO2014059744A1 (fr) 2014-04-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/000980 WO2014059744A1 (fr) 2012-10-17 2013-08-22 Solution alcaline de polissage mécano-chimique

Country Status (3)

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CN (1) CN103773244B (fr)
TW (1) TWI606115B (fr)
WO (1) WO2014059744A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1927975A (zh) * 2005-09-08 2007-03-14 罗门哈斯电子材料Cmp控股股份有限公司 可除去聚合物阻挡层的抛光浆液
CN101177602A (zh) * 2006-11-10 2008-05-14 富士胶片株式会社 研磨液
WO2011072494A1 (fr) * 2009-12-18 2011-06-23 安集微电子（上海）有限公司 Liquide de polissage mécano-chimique
CN102190961A (zh) * 2010-03-02 2011-09-21 福吉米株式会社 抛光用组合物以及使用该抛光用组合物的抛光方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2714411B2 (ja) * 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
JP4776269B2 (ja) * 2005-04-28 2011-09-21 株式会社東芝 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法
TW200714697A (en) * 2005-08-24 2007-04-16 Jsr Corp Aqueous dispersion for chemical mechanical polish, kit for formulating the aqueous dispersion, chemical mechanical polishing method and method for producing semiconductor device
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP2010283184A (ja) * 2009-06-05 2010-12-16 Fa Service Corp 再生半導体ウエハの製造方法
CN102093817A (zh) * 2009-12-11 2011-06-15 安集微电子（上海）有限公司 一种用于钽阻挡抛光的化学机械抛光液

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1927975A (zh) * 2005-09-08 2007-03-14 罗门哈斯电子材料Cmp控股股份有限公司 可除去聚合物阻挡层的抛光浆液
CN101177602A (zh) * 2006-11-10 2008-05-14 富士胶片株式会社 研磨液
WO2011072494A1 (fr) * 2009-12-18 2011-06-23 安集微电子（上海）有限公司 Liquide de polissage mécano-chimique
CN102190961A (zh) * 2010-03-02 2011-09-21 福吉米株式会社 抛光用组合物以及使用该抛光用组合物的抛光方法

Also Published As

Publication number Publication date
TW201416427A (zh) 2014-05-01
CN103773244A (zh) 2014-05-07
CN103773244B (zh) 2017-08-11
TWI606115B (zh) 2017-11-21

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