CN101490192A - Polishing slurry for low dielectric material - Google Patents

Polishing slurry for low dielectric material Download PDF

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Publication number
CN101490192A
CN101490192A CNA2007800271849A CN200780027184A CN101490192A CN 101490192 A CN101490192 A CN 101490192A CN A2007800271849 A CNA2007800271849 A CN A2007800271849A CN 200780027184 A CN200780027184 A CN 200780027184A CN 101490192 A CN101490192 A CN 101490192A
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China
Prior art keywords
polishing fluid
polishing
acid
weight percent
percent concentration
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CN101490192B (en
Inventor
宋伟红
陈国栋
荆建芬
姚颖
宋成兵
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Anji Microelectronics Shanghai Co Ltd
Anji Microelectronics Co Ltd
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Anji Microelectronics Shanghai Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Abstract

A polishing slurry for low dielectric material is disclosed. It includes abrasive and water, and is characterized in that, it further contains one or more kinds of metal chelating agents, azole-species as film-forming agent and oxidizing agent. Under lower pressure, the present polishing slurry has higher polishing speed on low dielectric material, suitable polishing selectivity for other materials, and better surface finish after polishing.

Description

Polishing slurry for low dielectric material
Polishing fluid technical field for polishing low dielectric material
The present invention relates to a kind of polishing fluid, more particularly to a kind of polishing fluid for polishing low dielectric material.No
In integrated circuit fabrication, the standard of interconnection technique is being improved, and one layer deposits one layer again above so that form irregular pattern in substrate surface.A kind of flattening method used in the prior art is exactly to chemically-mechanicapolish polish（), CMP CMP is exactly to go to polish an integrated circuit surface using a kind of mixture containing abrasive material and polishing pad.In typical cmp method, substrate is directly contacted with rotating polishing pad, pressure is applied in substrate back with a loads.Between the Throwing photophases, pad and operating desk rotation, while the power kept down in substrate back, by abrasive material and chemism solution（Commonly referred to as polishing fluid or polishing slurries）It is applied on pad, the polishing fluid and the film polished occur chemical reaction and proceed by polishing process.
CMP planarization liquid mainly includes abrasive material, chemical reagent and solvent etc..Abrasive material is mainly various inorganic or organic granular, such as silica, aluminum oxide, zirconium dioxide, cerium oxide, iron oxide, polymer beads and/or their mixture.The solvent of CMP planarization liquid is mainly water or alcohols.And chemical reagent is for controlling polishing speed and polishing selection ratio, improving polished surface performance and improving the stability of polishing fluid, including oxidant, complexing agent, corrosion inhibiter and/or surfactant etc..
Traditional insulator materials（TEOS) due to higher dielectric constant（3.9 or higher) electric capacity between conducting shell can be caused to increase, so as to influence the speed of integrated circuit, make reduction efficiency, with integrated circuit complication and become more meticulous, this base material can not meet all the more more advanced process（65nm or 45nm) technical requirements, the certainty that dielectric materials are integrated circuit technique development is introduced in the substrate Trend, is generated many for dielectric materials therewith（CDO Throwing light slurries), such as USP 6,046,112 discloses and uses Zr02 for abrasive material, coordinates quaternary ammonium base, and production cost is high, USP6, and 043,155 discloses using the higher Ce0 of price2For abrasive particle, and because hardness is higher, easily produce surface tear.USP6,270,395 disclose and use carbon, carbide and some metal oxides are abrasive grain, increase the possibility for introducing surface contaminant, in a word, at present low-dielectric material lapping liquid be all not reaching to the perfect adaptation of manufacturing cost and Technological expression, generally existing surface smoothness, the problem of in terms of polishing selectivity and surface topography control.
Brief summary of the invention
The invention aims to solve under relatively low pressure, the removal rate of dielectric materials is relatively low and polishing selection problem more rambunctious there is provided a kind of polishing fluid of the good dielectric materials of surface smoothness.
The above-mentioned purpose of the present invention is realized by following technical proposal：The polishing fluid of the present invention includes abrasive material and water, in addition to one or more metal-chelators, azole film forming agent and oxidant.
Polishing fluid of the present invention also includes surfactant.
In the present invention, described abrasive material is the 810 of Si02 sol particles, aluminium coating or adulterated al2Sol particle, A1203 particles, high polymer particle or their mixture.
The particle diameter of described particle is preferably 20 150nm;
More preferably it is 50 120nm.
Metal-chelator of the present invention is one or more organic phospho acids or poly-organic acid chelate；Described organic phospho acid is：2- phosphoric acid fourths protective embankment-1; 2,4 tricarboxylic acids, hydroxy ethylidene-diphosphate, 2-HPAA, aminotrimethylene phosphoric acid, diethylenetriamine pentamethylene phosphoric acid, ethylenediamine tetramethylene phosphoric acid, PAPE or many ether tetramethylene phosphoric acid of polyamino；Described poly-organic acid chelate is poly-epoxy succinic acid, poly-aspartate, HPMA, HPMA-poly- third The sour hydroxypropyl ester copolymer of olefin(e) acid copolymer, acrylic acid -2- acrylamide-2-methyl propane sulfonics copolymer, acrylic acid-acrylic or acrylic acid-acrylic ester-phosphoric acid-co-polymer of sulfonate.
Described metal-chelator weight percent concentration be preferably 0.01 2 °/.；
More preferably it is 0.1 1%.
Azole film forming agent of the present invention is benzotriazole and its derivative, 1- phenyl -5- sulfydryls-tetrazole, 2- Mercapto-benzothiazoles or 2-mercaptobenzimidazole.
Described azole film forming agent weight percent concentration is preferably 0.01 1%；
More preferably it is 0.1 0.5%.
Oxidant of the present invention is the θ 2 of Η 2, persulfuric acid and its salt or organic peroxide.
Described oxidant weight percent concentration be preferably 0 10 °/0;
More preferably it is 0.1 3%.
Surfactant of the present invention is cationic surfactant, anion surfactant, amphoteric surfactant or nonionic surfactant；Described surfactant is：Polyacrylic acid and its salt (Ρ Α Α), PAM, polyethylene glycol（PEG), polyvinyl alcohol（PVA), polyethyleneimine (PEA), quaternary surfactant, glycine betaine, amino acid type surfactant, AEO, chitosan or glucan.
The molecular weight ranges of polyacrylic acid and its salt of the present invention are 2,000 30 ten thousand, the molecular weight ranges of PAM are 1000-500 ten thousand, the molecular weight ranges of polyethylene glycol are 200 10000, the molecular weight ranges of polyvinyl alcohol are 1000-10 ten thousand, the molecular weight ranges of polyethyleneimine are 1,000 10 ten thousand, and the molecular weight ranges of glucan are 1000-20 ten thousand.
Described surfactant weight percent concentration is preferably 0.01 0.5%;
More preferably it is 0.05 0.2%. .
Polishing fluid of the present invention also includes the one or more in organic amine compound, heterocyclic nitrogen compound, glycerine or bactericide.
Described organic amine compound is polyamines polyene, polyhydroxy polyamines, ethylenediamine or cyclammonium；It is described Heterocyclic nitrogen compound be N-methyl pyrroles, N-methyl pyrrolidones, 3- pyrrolins or 3- pyrroles's protective embankment alcohol.Described organic amine compound weight percent concentration is preferably 20 1000ppm;
More preferably it is 50 500ppm.
Described glycerin weight percent concentration is preferably 0 10%.
Described bactericide is preferably quaternary ammonium salt.
Described bactericide weight percent concentration is preferably 10 500ppm.
Polishing fluid pH value of the present invention is preferably 8 12；
More preferably it is 10.5 11.5.
The polishing fluid preferably polishing low dielectric material of the present invention includes BD1 (black diamond 1), BD2 (black diamond 2) or porous material (core materials) for oxide (CDO) low dielectric substrate material of doped carbon0
The positive effect of the present invention is:A kind of silica sol particles of the present invention using particle size between 20 150nm, coordinate the metal-chelator described in patent, very effective removal tantalum barrier layer and dielectric materials, and obtain preferable surface roughness, wound is drawn without surface corrosion and surface, relatively low purgeable surface contaminant, and preferable surface type looks can be obtained according to the demand of different process adjustment polishing selection ratio.
And the polishing liquid energy of the present invention has the removal rate of higher dielectric materials and the suitable polishing of other materials is selected to compare at lower pressures, and the surface smoothness after polishing is preferable.Part and the general corrosion for preventing from producing during medal polish can be used for, surface contaminant is reduced, product yield is improved.
Brief description of the drawings
Fig. 1 is using the SEM figures on the square metal copper surface after the contrast sol particle Throwing light of polishing fluid 1； Fig. 2 is using the SEM figures on the square metal copper surface after the polishing of the polishing fluid of embodiment 12；Fig. 3 is using the SEM figures in the thin copper lines after the Rong Jiao Yuan grain polishing of contrast polishing fluid 1；Fig. 4 is using the SEM figures on the square metal copper surface after the polishing of the polishing fluid of embodiment 12；Fig. 5 is the dielectric materials removal rate using embodiment 5 (change pH value) with polishing fluid pH value situation of change figure；
Fig. 6 is the dielectric materials removal rate using embodiment 5 (change oxidant concentration) with oxidant concentration situation of change figure；
Fig. 7 is (to change chelating agent concentrations using embodiment 6）Dielectric materials removal rate with middle chelating agent concentrations situation of change figure.
The content of the invention
Embodiment 1
Contrast common silica sol granule (70nm) 10% and water surplus that polishing fluid 1 is contrasted, pH=ll;The silica sol granule (lOOnm) 10% and water surplus used in the patent of polishing fluid 1, pH=ll;The many ether tetramethylene phosphonic acids (PAPEMP) 0.2% of silica sol granule (lOOnm) 5%, BTA 0.1%, polyamino, the θ 2 1.5% of Η 2 and the water surplus used in the patent of polishing fluid 2, ρ Η=11;
The many ether tetramethylene phosphonic acids of silica sol granule (lOOnm) 10%, BTA 0.1%, polyamino used in the patent of polishing fluid 3（PAPEMP) 0.2%, the .5% of 2 θ of Η 2 and water surplus, ρ Η=11;The many ether tetramethylene phosphonic acids of silica sol granule (lOOnm) 10%, BTA 0.1%, polyamino used in the patent of polishing fluid 4（PAPEMP) 0.2°/., the .5% of 2 θ of Η 2, polyacrylic acid or polypropylene salt (molecular weight is 5000) (Ρ Α Α) 0.2% and water surplus, ρ Η=11;
The many ether tetramethylene phosphonic acids of silica sol granule (lOOnm) 10%, BTA 0.1%, polyamino used in the patent of polishing fluid 5（PAPEMP) 0.2%, the .5% of 2 θ of Η 2, polyacrylic acid or polypropylene salt (molecular weight is 5000), (Ρ Α Α) 0.2%, DEA200ppm and water surplus, pH=ll; Silica sol granule (100nm) 10%, BTA 0.1%, the 2- phosphonobutanes -1 used in the patent of polishing fluid 6,2,4 tricarboxylic acids (PBTCA) 0.2%, H2O2 1.5%, polyacrylic acid or polypropylene salt (molecular weight is 5000) (PAA) 0.2% and water surplus, H=ll;
10 ° of the silica sol granule (lOOnm) used in the patent of Throwing light liquid 7/., BTA 0.1%, hydroxy ethylene diphosphonic acid (HEDP) 0.2%, the θ 2 1.5% of Η 2, polyacrylic acid or polypropylene salt（Molecule Halo is 5000) (Ρ Α Α) 0.2% and water surplus, ρ Η=11;
Silica sol granule (100nm) 10%, BTA 0.1%, ATMP (ATMP) 0.2%, H2O2 1.5%, polyacrylic acid or the polypropylene salt used in the patent of polishing fluid 8（Molecular weight is 5000) (Ρ Α Α) 0.2% and water surplus, ρ Η=11;
Silica sol granule (lOOnm) 10%, Β Τ Α 0.1%, ethylenediamine tetramethylene phosphonic acid (EDTMPA) 0.2%, the .5% of 2 θ of Η 2, polyacrylic acid or the polypropylene salt used in the patent of polishing fluid 9（Molecular weight is 5000) (Ρ Α Α) 0.2% and water surplus, ρ Η=11;
Silica sol granule (100nm) 10%, BTA 0.1%, the poly-epoxy succinic acid used in the patent of polishing fluid 10（PESA) 0.2%, the .5% of 2 θ of Η 2, polyacrylic acid or polypropylene salt（Molecular weight is 5000) (Ρ Α Α) 0.2% and water surplus, ρ Η=11;
Silica sol granule (100nm) 10%, BTA 0.1%, the poly-aspartate used in the patent of polishing fluid 11（PASP) 0.2°/., H2O2 1.5%, polyacrylic acid or polypropylene salt（Molecular weight is 5000) (Ρ Α Α) 0.2% and water surplus, ρ Η=10.9;
The many ether tetramethylene phosphonic acids (PAPEMP) 0.2% of silica sol granule (100nm) 10%, BTA 0.1%, polyamino that are used in the patent of polishing fluid 12, H2 〇 2 l.5%, polyethyleneimine（Molecular weight is 4000) (PEA) 0.02% and water surplus, pH=10,8;
0.1 ° of silica sol granule (100nm) 10%, the BTA used in the patent of polishing fluid 13/., many ether tetramethylene phosphonic acids (PAPEMP) 0.05% of polyamino, cetyl trimethylammonium bromide（CTAB) 0.1% and water surplus, pH=ll;
Silica sol granule (100nm) 10%, BTA 0.1%, the polyamino used in the patent of polishing fluid 14 Many ether tetramethylene phosphonic acids（PAPEMP) 0.2%, OPEO（Triton 100) 0.05% and water surplus, pH=ll; '
Polishing fluid 15 Al2O3 (100nm) 10% BTA 0.1%, many ether tetramethylene phosphonic acids (PAPEMP) 0.2% of polyamino, H2O2 1.5%, polyacrylic acid or polypropylene salt（Molecular weight is 5000) (Ρ Α Α) 0.2% and water surplus, ρ Η=11;
The Al-Covered of polishing fluid 16 (45nm) 10%>BTA 0.1%, polyamino polyether Qi tetramethylene phosphonic acids（PAPEMP) 0.2%, H2O2 1.5%, polyacrylic acid or polypropylene salt（Molecular weight is 5000) (PAA) 0.2% and water surplus, pH=ll;
The miserable miscellaneous silica (45nm) 10% of the aluminium of polishing fluid 17, BTA 0.1%, many ether tetramethylene phosphonic acids of polyamino（PAPEMP) 0.2%, H2O2 1.5%, polyacrylic acid or polypropylene salt（Molecular weight is 5000) (PAA) 0.2% and water surplus, pE ll;
The Si0 used in the patent of polishing fluid 18210%th, many ether tetramethylene phosphonic acids (PAPEMP) 0.2% of BTA 0.2%, polyamino, acrylic acid -2- acrylamide-2-methyl propane sulfonic copolymers（Molecular weight is 5000) 0.2%, 021.5% and water surplus, PH=11;
Polish liquid and preparation method thereof：A certain amount of Ludox is added into agitator, being quantitatively adding deionized water under stirring with given pace is well mixed, and adds 50% glycerine water solution, and stirring is hooked, and is added the 1%BTA aqueous solution, is stirred.Then the optional Components such as organic acid, aqueous surfactant solution, and organic amine and bactericide are added, is adjusted with KOH (50%) solution to required pH value produce Throwing light liquid afterwards.
Polishing material：BD (low-k material), TEOS, Ta, Cu;Polishing condition：L 1.5Psi, polishing disk and rubbing head rotating speed 70/90rpm, polishing pad Politex, Throwing light flow velocity 100ml/min, Logitech PM5 Polisher use DIW and cleaning fluid then DIW cleaning procedures after polishing.
Embodiment 2
The aluminium of polishing fluid 19 doping silicon oxide particle (45nm) 10%, 1- phenyl -5- sulfydryls-tetrazole (PMTA) 0.01%, many ether tetramethylene phosphonic acids (PAPEMP) 0.01% of polyamino, persulfuric acid 0.1%, Polyacrylic acid or polypropylene salt（Molecular weight is 5000) 0.5% and water surplus, pH=10.5;
Embodiment 3
The Si0 used in the patent of polishing fluid 202Sol particle (80nm) 10%, 1- phenyl -5- sulfydryls-tetrazole (PMTA) 0.5%, many ether tetramethylene phosphonic acids of polyamino（PAPE P) 0.1%, persulfuric acid 3%, polyacrylic acid or polypropylene salt（Molecular weight is 5000) (PAA) 0.01% and water surplus, pH=11.5;
Embodiment 4
The silica sol particles (80nm) 10% that are used in the patent of polishing fluid 21,5- amino -1-H- tetrazoles（ATA) 1%, many ether tetramethylene phosphonic acids of polyamino（PAPEMP) 2%, persulfuric acid 10%, PAM（Molecular weight is 5000) 0.05% and water surplus, pH=12;
Embodiment 5
The silica sol particles (80nm) 10% that are used in the patent of polishing fluid 22,2- Mercapto-benzothiazoles 0.01%, many ether tetramethylene phosphonic acids (PAPEMP) 0.01% of polyamino, ammonium persulfate 10%, polyethyleneimine（Molecular weight is 5000) 0.1% and water surplus, pH=8;
Embodiment 6
The silica sol particles used in the patent of polishing fluid 23（50nm) 10%, 2-mercaptobenzimidazole 0.1%, many ether tetramethylene phosphonic acids of polyamino（PAPEMP) 0.1%, ammonium persulfate 10%, polyacrylic acid or polypropylene salt（Molecular weight is 5000) Halo, pH=ll more than (PAA) 0.1%, glycerine 5%, ethylenediamine 20ppm, chlorodimethyl dodecylbenzyl ammonium lOppm and water;
Embodiment 7
The silica sol particles used in the patent of polishing fluid 24（50nm) 10%, 5- amino -1-H- tetrazoles（ATA) 0. 5%, many ether tetramethylene phosphonic acids of polyamino（PAPEMP) 1%, persulfuric acid 3%, polyethylene glycol（Molecular weight is 400) (PAA) 0.01%, glycerine 10%, N-methyl pyrroles 500ppm, chlorodimethyl dodecylbenzyl ammonium 500ppm and water surplus, pH=ll; . The silica sol particles (150nm) 10% that are used in the patent of polishing fluid 25, BTA O.15%, many ether tetramethylene phosphonic acids of polyamino（PAPEMP) 0.05%, ammonium persulfate 2%, pungent Qi phenol polyethenoxy ethers（Molecular weight be 5000) 0.05%, glycerine 2%, 1,2- dihydroxy ethyl ethylenediamines 20ppm, chlorodimethyl dodecylbenzyl ammonium 100ppm, water surplus, pH=ll;
Embodiment 9
The silica sol particles used in the patent of polishing fluid 26（20nm) 10%, BTA 0.15%, many ether tetramethylene phosphonic acids of polyamino（PAPEMP) 0.05%, Peracetic acid 10%, acrylic acid -2- acrylamide-2-methyl propane sulfonic copolymers（Molecular weight is 5000) 0.5%, glycerine 2%, 1,2- dihydroxy ethyl ethylenediamines 500ppm, the protective embankment base hexadecyldimethyl benzyl ammonium lOOppm of chlorodimethyl 12 and water surplus, pH=ll;
Embodiment 10
The silica sol particles used in the patent of polishing fluid 27（20nm) 10%, BTA O.15%, many ether tetramethylene phosphonic acids of polyamino（PAPEMP) 0.05%, persulfuric acid 10%, acrylic acid -2- acrylamide-2-methyl propane sulfonic copolymers（Molecular weight be 5000) 0.2%, glycerine 2%, 1,2- dihydroxy ethyl ethylenediamines 1000ppm, bactericide（Chlorodimethyl dodecylbenzyl ammonium）LOOppm and water surplus, pH=9;
Embodiment 11 '
The silica sol particles used in the patent of polishing fluid 28（20nm) 10%, BTA O.15%. many ether tetramethylene phosphonic acids of polyamino（PAPEMP) 0.05%, persulfuric acid 10%, acrylic acid -2- acrylamide-2-methyl propane sulfonic copolymers（Molecular weight be 5000) 0.2%, glycerine 2%, 1,2- dihydroxy ethyl ethylenediamines 1000ppm, bactericide（Chlorodimethyl dodecylbenzyl ammonium）100ppm, N-methyl pyrrolidones 1% and water surplus, pH=9;
Embodiment 12
The silica (BD1) and the polishing speed and surface contaminant and surface topography characteristic of other base materials of the miserable miscellaneous carbon of dielectric materials BD The dish-like depression of polishing fluid BD Ta Cu surface contaminations
(A/min) (A/min) (A/min) thing population size
1* 551 289 220 422 is relatively low ' big
1 693 462 156.5 233 is relatively low big
2 614 350 206 326 is relatively low smaller
3 898 541 257 482 is low smaller
4 854 561 271 624 ghosts are small
5 877 549 179 733 low big
6 887 574 336 653 is low small
7 867 594 288 625 is low big
8 1,014 546 350 616 low protrusions
9 840 545 180 659 is low small
10 805 63 〇 34 342 709 are low small
11 969 559 367 573 low protrusions
12 793 573 335 545 is low small
13 660 795 552 653 it is low it is small '
14 250 538 406 361 is low small
15 274 246 394 440 is low small
16 332 245 423 502 is low small
17 470 442 335 569 is low small
18 1,035 564 370 585 low protrusions
1*：For object of reference sol particle. BD:The silica of black diamond doped carbons, TEOS:Silica, Ta:Metal tantalum-barrier metal material, Cu:Metallic copper; Def:Surface contaminant situation, DSH:Butterfly-type depression size,
Effect example
The Si0 used in patent2Sol particle has the dielectric materials removal rate higher compared with object of reference sol particle.Due to the addition of chelate, dielectric materials can be increased to some extent（BD removal rate), different additions and different types of influence are shown in Fig. 7, even if the small addition of organic amine compound is the removal rate that can significantly modify metallic copper.The concentration of hydrogen peroxide influences to show in Fig. 6, the removal rate of various base materials can be changed with polishing fluid PH change as shown in Figure 5, so as to change polishing selection ratio, to reach the correction to surface topography, the addition of this external surfactants can also reduce the quantity of surface contaminant, improve surface smoothness.Solid content is also to influence the key factor of BD removal rates, solid content increase, and both polishing selection ratios also increase.Suitable polishing selection ratio can obtain relatively good surface topography, be recessed relatively low.In a word, polishing selection ratio can be adjusted by adjusting the relative amount of solid content and various components, improves the situation of surface contaminant.To meet the technical need of different processing procedures.All these data are obtained under relatively low lower pressure（DF=1.5Psi).
Raw material and reagent used in the present invention are commercially available prod.

Claims (1)

  1. Claim
    1st, a kind of polishing fluid for polishing low dielectric material, the polishing fluid includes abrasive material and water, it is characterised in that：Also include one or more metal-chelators, azole film forming agent and oxidant.
    2nd, polishing fluid as claimed in claim 1, it is characterised in that：Described polishing fluid also includes surfactant.
    3rd, Throwing light liquid as claimed in claim 1, it is characterised in that：Described abrasive material is the Si0 of Si02 sol particles, aluminium coating or adulterated al2Sol particle, A1203Particle, high polymer particle or their mixture.
    4th, polishing fluid as claimed in claim 3, it is characterised in that：The particle diameter of described abrasive material is 20 150nm.
    5th, Throwing light liquid as claimed in claim 4, it is characterised in that：The particle diameter of described abrasive material is 50 120nmo
    6th, Throwing light liquid as claimed in claim 1, it is characterised in that：Described metal-chelator is one or more organic phospho acids or poly-organic acid chelate.
    7th, polishing fluid as claimed in claim 6, it is characterised in that：Described organic phospho acid is：2- phosphoric acid butane-1; 2,4 tricarboxylic acids, hydroxy ethylidene-diphosphate, 2-HPAA, aminotrimethylene phosphoric acid, diethylenetriamine pentamethylene phosphoric acid, ethylenediamine tetramethylene phosphoric acid, PAPE or many ether tetramethylene phosphoric acid of polyamino.
    8th, polishing fluid as claimed in claim 6, it is characterised in that：Described poly-organic acid chelate is poly-epoxy succinic acid, poly-aspartate, HPMA, HPMA-acrylic copolymer, acrylic acid -2- acrylamide-2-methyl propane sulfonics copolymer, the sour hydroxypropyl ester copolymer of acrylic acid-acrylic or acrylic acid-acrylic ester-phosphoric acid-co-polymer of sulfonate.
    9th, polishing fluid as claimed in claim 6, it is characterised in that：Described metal-chelator weight percent concentration is 0.01 2%. 10th, polishing fluid as claimed in claim 9, it is characterised in that：Described metal-chelator weight percent concentration is 0.1 1%.
    11st, polishing fluid as claimed in claim 1, it is characterised in that：Described azole film forming agent includes benzotriazole and its derivative, 1- phenyl -5- sulfydryls-tetrazole, 2- Mercapto-benzothiazoles, benzo miaow azoles or 2-mercaptobenzimidazole.
    12nd, polishing fluid as claimed in claim 11, it is characterised in that：Described azole film forming agent weight percent concentration is 0.01 1%.
    13rd, polishing fluid as claimed in claim 12, it is characterised in that：Described azole film forming agent weight percent concentration is 0.1 0.5%.
    14th, polishing fluid as claimed in claim 1, it is characterised in that：Described oxidant is the θ 2 of Η 2, persulfuric acid and its salt or organic peroxide.
    15th, polishing fluid as claimed in claim 14, it is characterised in that：Described oxidant weight percent concentration is 0： 10%.
    16th, polishing fluid as claimed in claim 15, it is characterised in that：Described oxidant weight percent concentration is 0.1 3%.
    17th, polishing fluid as claimed in claim 2, it is characterised in that：Described surfactant is cationic surfactant, anion surfactant, amphoteric surfactant or nonionic surfactant.
    18th, Throwing light liquid as claimed in claim 17, it is characterised in that：Described surfactant is：Polyacrylic acid and its salt, PAM, polyethylene glycol, polyvinyl alcohol, polyethyleneimine, quaternary surfactant, glycine betaine, amino acid type surfactant, AEO, glucan or chitosan.
    19th, Throwing light liquid as claimed in claim 17, it is characterised in that：Described surfactant weight percent concentration is 0.01 0.5%.
    20th, polishing fluid as claimed in claim 19, it is characterised in that：Described surfactant weight percent concentration be 0.05 0.2 °/0。 21st, polishing fluid as claimed in claim 18, it is characterised in that：Described polyacrylic acid and its molecular weight ranges of salt are 2,000 30 ten thousand, the molecular weight ranges of PAM are 1000-500 ten thousand, the molecular weight ranges of polyethylene glycol are 200 10000, the molecular weight ranges of polyvinyl alcohol are 1000-10 ten thousand, the molecular weight of polyethyleneimine is enclosed for 1,000 10 ten thousand, and the molecular weight ranges of glucan are 1000-20 ten thousand.
    22nd, the polishing fluid as described in any one of claim 1 to 21, it is characterised in that：Described polishing fluid also includes the one or more in organic amine compound, heterocyclic nitrogen compound, glycerine or bactericide.
    23rd, polishing fluid as claimed in claim 22, it is characterised in that：Described organic amine compound is polyamines polyene, polyhydroxy polyamines, ethylenediamine or cyclammonium；The heterocyclic nitrogen compound is N-methyl pyrroles, N-methyl pyrrolidones, 3- pyrrolins or 3- pyrrolidinols etc..
    24th, polishing fluid as claimed in claim 23, it is characterised in that：Described organic amine compound weight percent concentration is 20 1000ppm.
    25th, polishing fluid as claimed in claim 24, it is characterised in that：Described organic amine compound weight percent concentration is 50 500ppm.
    26th, polishing fluid as claimed in claim 22, it is characterised in that：Described glycerin weight percent concentration is 0 10%.
    27th, polishing fluid as claimed in claim 22, it is characterised in that：Described bactericide is quaternary ammonium salt.
    28th, polishing fluid as claimed in claim 27, it is characterised in that：Described bactericide weight percent concentration is 10 500ppm.
    29th, the polishing fluid as described in any one of claim 1 to 21, it is characterised in that：Described polishing fluid pH value is 8 12.
    30th, polishing fluid as claimed in claim 29, it is characterised in that：Described polishing fluid pH value is
    10.5〜11.5。
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PCT/CN2007/002102 WO2008025209A1 (en) 2006-08-25 2007-07-09 Polishing slurry for low dielectric material

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* Cited by examiner, † Cited by third party
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TWI615462B (en) 2008-04-23 2018-02-21 日商日立化成股份有限公司 Polishing agent and method for polishing substrate using the same
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US8821215B2 (en) * 2012-09-07 2014-09-02 Cabot Microelectronics Corporation Polypyrrolidone polishing composition and method
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Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60019142T2 (en) * 1999-08-13 2006-02-09 Cabot Microelectronics Corp., Aurora POLISHING SYSTEM WITH STOPPUT AND METHOD FOR USE THEREOF
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles

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