CN101478004B - 薄膜晶体管、半导体装置及电子设备 - Google Patents

薄膜晶体管、半导体装置及电子设备 Download PDF

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Publication number
CN101478004B
CN101478004B CN2008101797472A CN200810179747A CN101478004B CN 101478004 B CN101478004 B CN 101478004B CN 2008101797472 A CN2008101797472 A CN 2008101797472A CN 200810179747 A CN200810179747 A CN 200810179747A CN 101478004 B CN101478004 B CN 101478004B
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semiconductor
film
semiconductor film
impurity element
films
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Expired - Fee Related
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CN2008101797472A
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Chinese (zh)
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CN101478004A (zh
Inventor
乡户宏充
宫入秀和
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CN2008101797472A 2007-12-03 2008-12-03 薄膜晶体管、半导体装置及电子设备 Expired - Fee Related CN101478004B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007311965 2007-12-03
JP2007311965 2007-12-03
JP2007-311965 2007-12-03

Publications (2)

Publication Number Publication Date
CN101478004A CN101478004A (zh) 2009-07-08
CN101478004B true CN101478004B (zh) 2012-09-05

Family

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Family Applications (1)

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CN2008101797472A Expired - Fee Related CN101478004B (zh) 2007-12-03 2008-12-03 薄膜晶体管、半导体装置及电子设备

Country Status (5)

Country Link
US (2) US7923730B2 (https=)
JP (1) JP5593025B2 (https=)
KR (1) KR101523353B1 (https=)
CN (1) CN101478004B (https=)
TW (1) TWI456769B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5311957B2 (ja) * 2007-10-23 2013-10-09 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP5311955B2 (ja) * 2007-11-01 2013-10-09 株式会社半導体エネルギー研究所 表示装置の作製方法
WO2011007682A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101588355B1 (ko) 2009-12-23 2016-02-15 삼성디스플레이 주식회사 터치스크린 기판, 이의 제조 방법 및 표시 패널
US8383434B2 (en) * 2010-02-22 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof

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US6664149B2 (en) * 2001-08-28 2003-12-16 Hannstar Display Corp. TFT-LCD formed with four masking steps
CN1516249A (zh) * 2003-01-09 2004-07-28 友达光电股份有限公司 一种薄膜晶体管的制作方法
CN101043047A (zh) * 2006-03-22 2007-09-26 三星电子株式会社 显示装置及其制造方法

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JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPS5892217A (ja) 1981-11-28 1983-06-01 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS60160170A (ja) 1984-01-31 1985-08-21 Seiko Instr & Electronics Ltd 薄膜トランジスタ
JPS6267872A (ja) 1985-09-20 1987-03-27 Toshiba Corp 非晶質シリコン薄膜トランジスタ
JPS63258072A (ja) 1987-04-15 1988-10-25 Nec Corp 電界効果トランジスタ
JP2650946B2 (ja) * 1988-03-04 1997-09-10 株式会社日立製作所 薄膜電界効果素子
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5514879A (en) * 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US7115902B1 (en) * 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7098479B1 (en) * 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
JPH05226656A (ja) * 1992-02-13 1993-09-03 Hitachi Ltd 薄膜半導体装置及びその製造方法
JPH06326312A (ja) 1993-05-14 1994-11-25 Toshiba Corp アクティブマトリクス型表示装置
JPH07263698A (ja) * 1994-03-17 1995-10-13 Hitachi Ltd 薄膜トランジスタ及びその製造方法
JPH08201851A (ja) * 1995-01-31 1996-08-09 Sharp Corp アクティブマトリクス基板
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JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
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JP2005322845A (ja) * 2004-05-11 2005-11-17 Sekisui Chem Co Ltd 半導体デバイスと、その製造装置、および製造方法
TWI234288B (en) * 2004-07-27 2005-06-11 Au Optronics Corp Method for fabricating a thin film transistor and related circuits
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KR101455304B1 (ko) * 2007-10-05 2014-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법
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* Cited by examiner, † Cited by third party
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US6664149B2 (en) * 2001-08-28 2003-12-16 Hannstar Display Corp. TFT-LCD formed with four masking steps
CN1516249A (zh) * 2003-01-09 2004-07-28 友达光电股份有限公司 一种薄膜晶体管的制作方法
CN101043047A (zh) * 2006-03-22 2007-09-26 三星电子株式会社 显示装置及其制造方法

Also Published As

Publication number Publication date
US20090140256A1 (en) 2009-06-04
KR20090057892A (ko) 2009-06-08
US8063403B2 (en) 2011-11-22
TW200939482A (en) 2009-09-16
TWI456769B (zh) 2014-10-11
JP5593025B2 (ja) 2014-09-17
JP2009158935A (ja) 2009-07-16
US20110163316A1 (en) 2011-07-07
CN101478004A (zh) 2009-07-08
KR101523353B1 (ko) 2015-05-27
US7923730B2 (en) 2011-04-12

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Granted publication date: 20120905

Termination date: 20181203