CN101476710B - 发光器件及其制造方法 - Google Patents

发光器件及其制造方法 Download PDF

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Publication number
CN101476710B
CN101476710B CN2009100096747A CN200910009674A CN101476710B CN 101476710 B CN101476710 B CN 101476710B CN 2009100096747 A CN2009100096747 A CN 2009100096747A CN 200910009674 A CN200910009674 A CN 200910009674A CN 101476710 B CN101476710 B CN 101476710B
Authority
CN
China
Prior art keywords
light
light emitting
glass
led element
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009100096747A
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English (en)
Chinese (zh)
Other versions
CN101476710A (zh
Inventor
末广好伸
东门领一
和田聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003353007A external-priority patent/JP4254470B2/ja
Priority claimed from JP2003358308A external-priority patent/JP4238693B2/ja
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of CN101476710A publication Critical patent/CN101476710A/zh
Application granted granted Critical
Publication of CN101476710B publication Critical patent/CN101476710B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN2009100096747A 2003-07-17 2004-07-16 发光器件及其制造方法 Expired - Fee Related CN101476710B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2003-276099 2003-07-17
JP2003276099A JP4238666B2 (ja) 2003-07-17 2003-07-17 発光装置の製造方法
JP2003276099 2003-07-17
JP2003353007 2003-10-10
JP2003353007A JP4254470B2 (ja) 2003-10-10 2003-10-10 発光装置
JP2003-353007 2003-10-10
JP2003358308A JP4238693B2 (ja) 2003-10-17 2003-10-17 光デバイス
JP2003-358308 2003-10-17
JP2003358308 2003-10-17

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100712619A Division CN100472820C (zh) 2003-07-17 2004-07-16 发光器件

Publications (2)

Publication Number Publication Date
CN101476710A CN101476710A (zh) 2009-07-08
CN101476710B true CN101476710B (zh) 2011-01-05

Family

ID=34212528

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009100096747A Expired - Fee Related CN101476710B (zh) 2003-07-17 2004-07-16 发光器件及其制造方法

Country Status (2)

Country Link
JP (1) JP4238666B2 (https=)
CN (1) CN101476710B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112417A1 (ja) * 2005-04-15 2006-10-26 Asahi Glass Company, Limited ガラス封止発光素子、ガラス封止発光素子付き回路基板およびそれらの製造方法
JP4604819B2 (ja) * 2005-04-28 2011-01-05 豊田合成株式会社 発光装置
JP2007201354A (ja) * 2006-01-30 2007-08-09 Matsushita Electric Ind Co Ltd 発光モジュール
JP2007258466A (ja) * 2006-03-23 2007-10-04 Sumita Optical Glass Inc 照明装置及び発光装置
DE102008021436A1 (de) * 2008-04-29 2010-05-20 Schott Ag Optik-Konverter-System für (W)LEDs
CN102047452B (zh) * 2008-05-30 2013-03-20 夏普株式会社 发光装置、面光源、液晶显示装置和制造发光装置的方法
WO2011007816A1 (ja) * 2009-07-15 2011-01-20 三菱化学株式会社 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、および半導体発光装置の製造方法
JP2013077798A (ja) * 2011-09-14 2013-04-25 Toyoda Gosei Co Ltd ガラス封止ｌｅｄランプ及びその製造方法
JP5880025B2 (ja) * 2011-12-26 2016-03-08 日亜化学工業株式会社 発光装置
KR102059030B1 (ko) * 2012-09-24 2019-12-24 엘지이노텍 주식회사 자외선 발광 소자
JP2015079929A (ja) * 2013-09-11 2015-04-23 株式会社東芝 半導体発光装置及びその製造方法
JP6477734B2 (ja) * 2016-06-30 2019-03-06 日亜化学工業株式会社 発光装置及びその製造方法
CN110118312A (zh) * 2018-02-07 2019-08-13 深圳光峰科技股份有限公司 波长转换装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11177129A (ja) 1997-12-16 1999-07-02 Rohm Co Ltd チップ型ｌｅｄ、ｌｅｄランプおよびｌｅｄディスプレイ
JPH11204838A (ja) 1998-01-16 1999-07-30 Sanken Electric Co Ltd 半導体発光装置及びその製法
US5937273A (en) * 1994-12-27 1999-08-10 Fujitsu Limited Fabricating compound semiconductor by varying ratio of stagnant layer thickness and mean free path of seed material
JP2001185757A (ja) * 1999-12-27 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5995652U (ja) * 1982-12-18 1984-06-28 株式会社東芝 発光素子
EP0405757A3 (en) * 1989-06-27 1991-01-30 Hewlett-Packard Company High efficiency light-emitting diode
JP2979961B2 (ja) * 1994-06-14 1999-11-22 日亜化学工業株式会社 フルカラーｌｅｄディスプレイ
DE59713024D1 (de) * 1996-06-26 2010-01-28 Osram Opto Semiconductors Gmbh Lichtabstrahlender Halbleiterchip und Lichtabstrahlendes Halbleiterbauelement und Verfahren zu dessen Herstellung
JPH1140871A (ja) * 1997-07-22 1999-02-12 Mitsubishi Chem Corp 光電変換素子
JP2861991B2 (ja) * 1997-10-20 1999-02-24 日亜化学工業株式会社 窒化ガリウム系化合物半導体チップの製造方法
JP3449201B2 (ja) * 1997-11-28 2003-09-22 日亜化学工業株式会社 窒化物半導体素子の製造方法
JP3707279B2 (ja) * 1998-03-02 2005-10-19 松下電器産業株式会社 半導体発光装置
JP3337000B2 (ja) * 1999-06-07 2002-10-21 サンケン電気株式会社 半導体発光装置
JP2001144331A (ja) * 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd 発光装置
JP3989794B2 (ja) * 2001-08-09 2007-10-10 松下電器産業株式会社 Ｌｅｄ照明装置およびｌｅｄ照明光源
JP2003147346A (ja) * 2001-11-15 2003-05-21 Kansai Tlo Kk 希土類錯体を用いた光機能材料及び発光装置
JP2003188410A (ja) * 2001-12-19 2003-07-04 Daido Steel Co Ltd 発光ダイオードチップ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5937273A (en) * 1994-12-27 1999-08-10 Fujitsu Limited Fabricating compound semiconductor by varying ratio of stagnant layer thickness and mean free path of seed material
JPH11177129A (ja) 1997-12-16 1999-07-02 Rohm Co Ltd チップ型ｌｅｄ、ｌｅｄランプおよびｌｅｄディスプレイ
JPH11204838A (ja) 1998-01-16 1999-07-30 Sanken Electric Co Ltd 半導体発光装置及びその製法
JP2001185757A (ja) * 1999-12-27 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子

Also Published As

Publication number Publication date
JP2005039122A (ja) 2005-02-10
JP4238666B2 (ja) 2009-03-18
CN101476710A (zh) 2009-07-08

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Granted publication date: 20110105

Termination date: 20210716