CN101476710B - 发光器件及其制造方法 - Google Patents
发光器件及其制造方法 Download PDFInfo
- Publication number
- CN101476710B CN101476710B CN2009100096747A CN200910009674A CN101476710B CN 101476710 B CN101476710 B CN 101476710B CN 2009100096747 A CN2009100096747 A CN 2009100096747A CN 200910009674 A CN200910009674 A CN 200910009674A CN 101476710 B CN101476710 B CN 101476710B
- Authority
- CN
- China
- Prior art keywords
- light
- light emitting
- glass
- led element
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003276099 | 2003-07-17 | ||
| JP2003276099A JP4238666B2 (ja) | 2003-07-17 | 2003-07-17 | 発光装置の製造方法 |
| JP2003-276099 | 2003-07-17 | ||
| JP2003353007A JP4254470B2 (ja) | 2003-10-10 | 2003-10-10 | 発光装置 |
| JP2003353007 | 2003-10-10 | ||
| JP2003-353007 | 2003-10-10 | ||
| JP2003358308 | 2003-10-17 | ||
| JP2003358308A JP4238693B2 (ja) | 2003-10-17 | 2003-10-17 | 光デバイス |
| JP2003-358308 | 2003-10-17 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100712619A Division CN100472820C (zh) | 2003-07-17 | 2004-07-16 | 发光器件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101476710A CN101476710A (zh) | 2009-07-08 |
| CN101476710B true CN101476710B (zh) | 2011-01-05 |
Family
ID=34212528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100096747A Expired - Fee Related CN101476710B (zh) | 2003-07-17 | 2004-07-16 | 发光器件及其制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4238666B2 (enExample) |
| CN (1) | CN101476710B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006112417A1 (ja) * | 2005-04-15 | 2006-10-26 | Asahi Glass Company, Limited | ガラス封止発光素子、ガラス封止発光素子付き回路基板およびそれらの製造方法 |
| JP4604819B2 (ja) * | 2005-04-28 | 2011-01-05 | 豊田合成株式会社 | 発光装置 |
| JP2007201354A (ja) * | 2006-01-30 | 2007-08-09 | Matsushita Electric Ind Co Ltd | 発光モジュール |
| JP2007258466A (ja) * | 2006-03-23 | 2007-10-04 | Sumita Optical Glass Inc | 照明装置及び発光装置 |
| DE102008021436A1 (de) * | 2008-04-29 | 2010-05-20 | Schott Ag | Optik-Konverter-System für (W)LEDs |
| JP5512515B2 (ja) * | 2008-05-30 | 2014-06-04 | シャープ株式会社 | 発光装置、面光源および液晶表示装置 |
| WO2011007816A1 (ja) * | 2009-07-15 | 2011-01-20 | 三菱化学株式会社 | 半導体発光素子、半導体発光装置、半導体発光素子の製造方法、および半導体発光装置の製造方法 |
| JP2013077798A (ja) * | 2011-09-14 | 2013-04-25 | Toyoda Gosei Co Ltd | ガラス封止ledランプ及びその製造方法 |
| JP5880025B2 (ja) * | 2011-12-26 | 2016-03-08 | 日亜化学工業株式会社 | 発光装置 |
| KR102059030B1 (ko) * | 2012-09-24 | 2019-12-24 | 엘지이노텍 주식회사 | 자외선 발광 소자 |
| JP2015079929A (ja) | 2013-09-11 | 2015-04-23 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
| JP6477734B2 (ja) * | 2016-06-30 | 2019-03-06 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| CN110118312A (zh) * | 2018-02-07 | 2019-08-13 | 深圳光峰科技股份有限公司 | 波长转换装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11177129A (ja) | 1997-12-16 | 1999-07-02 | Rohm Co Ltd | チップ型led、ledランプおよびledディスプレイ |
| JPH11204838A (ja) | 1998-01-16 | 1999-07-30 | Sanken Electric Co Ltd | 半導体発光装置及びその製法 |
| US5937273A (en) * | 1994-12-27 | 1999-08-10 | Fujitsu Limited | Fabricating compound semiconductor by varying ratio of stagnant layer thickness and mean free path of seed material |
| JP2001185757A (ja) * | 1999-12-27 | 2001-07-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5995652U (ja) * | 1982-12-18 | 1984-06-28 | 株式会社東芝 | 発光素子 |
| EP0405757A3 (en) * | 1989-06-27 | 1991-01-30 | Hewlett-Packard Company | High efficiency light-emitting diode |
| JP2979961B2 (ja) * | 1994-06-14 | 1999-11-22 | 日亜化学工業株式会社 | フルカラーledディスプレイ |
| BR9709998B1 (pt) * | 1996-06-26 | 2010-04-20 | elemento de construção semicondutor, irradiador de luz, com elemento de conversão de luminescência | |
| JPH1140871A (ja) * | 1997-07-22 | 1999-02-12 | Mitsubishi Chem Corp | 光電変換素子 |
| JP2861991B2 (ja) * | 1997-10-20 | 1999-02-24 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体チップの製造方法 |
| JP3449201B2 (ja) * | 1997-11-28 | 2003-09-22 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
| JP3707279B2 (ja) * | 1998-03-02 | 2005-10-19 | 松下電器産業株式会社 | 半導体発光装置 |
| JP3337000B2 (ja) * | 1999-06-07 | 2002-10-21 | サンケン電気株式会社 | 半導体発光装置 |
| JP2001144331A (ja) * | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | 発光装置 |
| JP3989794B2 (ja) * | 2001-08-09 | 2007-10-10 | 松下電器産業株式会社 | Led照明装置およびled照明光源 |
| JP2003147346A (ja) * | 2001-11-15 | 2003-05-21 | Kansai Tlo Kk | 希土類錯体を用いた光機能材料及び発光装置 |
| JP2003188410A (ja) * | 2001-12-19 | 2003-07-04 | Daido Steel Co Ltd | 発光ダイオードチップ |
-
2003
- 2003-07-17 JP JP2003276099A patent/JP4238666B2/ja not_active Expired - Fee Related
-
2004
- 2004-07-16 CN CN2009100096747A patent/CN101476710B/zh not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5937273A (en) * | 1994-12-27 | 1999-08-10 | Fujitsu Limited | Fabricating compound semiconductor by varying ratio of stagnant layer thickness and mean free path of seed material |
| JPH11177129A (ja) | 1997-12-16 | 1999-07-02 | Rohm Co Ltd | チップ型led、ledランプおよびledディスプレイ |
| JPH11204838A (ja) | 1998-01-16 | 1999-07-30 | Sanken Electric Co Ltd | 半導体発光装置及びその製法 |
| JP2001185757A (ja) * | 1999-12-27 | 2001-07-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101476710A (zh) | 2009-07-08 |
| JP2005039122A (ja) | 2005-02-10 |
| JP4238666B2 (ja) | 2009-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110105 Termination date: 20210716 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |