CN101467275B - 具有再发光半导体构造和会聚光学元件的led装置 - Google Patents

具有再发光半导体构造和会聚光学元件的led装置 Download PDF

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Publication number
CN101467275B
CN101467275B CN2007800221229A CN200780022122A CN101467275B CN 101467275 B CN101467275 B CN 101467275B CN 2007800221229 A CN2007800221229 A CN 2007800221229A CN 200780022122 A CN200780022122 A CN 200780022122A CN 101467275 B CN101467275 B CN 101467275B
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optical element
led
base portion
light
optical
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Expired - Fee Related
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Chinese (zh)
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CN101467275A (zh
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迈克尔·A·哈斯
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0071—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source adapted to illuminate a complete hemisphere or a plane extending 360 degrees around the source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN2007800221229A 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置 Expired - Fee Related CN101467275B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80454406P 2006-06-12 2006-06-12
US60/804,544 2006-06-12
PCT/US2007/070858 WO2007146868A1 (en) 2006-06-12 2007-06-11 Led device with re-emitting semiconductor construction and converging optical element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2011104015055A Division CN102403439A (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置

Publications (2)

Publication Number Publication Date
CN101467275A CN101467275A (zh) 2009-06-24
CN101467275B true CN101467275B (zh) 2012-09-05

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Family Applications (3)

Application Number Title Priority Date Filing Date
CN2007800221229A Expired - Fee Related CN101467275B (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置
CN2011104015055A Pending CN102403439A (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置
CN2007800219214A Expired - Fee Related CN101467271B (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置

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CN2011104015055A Pending CN102403439A (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置
CN2007800219214A Expired - Fee Related CN101467271B (zh) 2006-06-12 2007-06-11 具有再发光半导体构造和会聚光学元件的led装置

Country Status (7)

Country Link
US (2) US7541610B2 (enExample)
EP (2) EP2036135A4 (enExample)
JP (2) JP2009540616A (enExample)
KR (2) KR20090018623A (enExample)
CN (3) CN101467275B (enExample)
TW (2) TW200807768A (enExample)
WO (2) WO2007146861A1 (enExample)

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US7994527B2 (en) * 2005-11-04 2011-08-09 The Regents Of The University Of California High light extraction efficiency light emitting diode (LED)
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
TW201448263A (zh) 2006-12-11 2014-12-16 美國加利福尼亞大學董事會 透明發光二極體
CN101452982A (zh) * 2007-11-29 2009-06-10 富士迈半导体精密工业（上海）有限公司 固态发光器件
EP2313936A4 (en) * 2008-07-16 2017-06-28 3M Innovative Properties Company Stable light source
US8455904B2 (en) 2009-04-20 2013-06-04 3M Innovative Properties Company Non-radiatively pumped wavelength converter
US8455903B2 (en) 2009-04-20 2013-06-04 3M Innovative Properties Company Non-radiatively pumped wavelength converter
SG10201401922TA (en) 2009-04-30 2014-06-27 Zeltiq Aesthetics Inc Device, system and method of removing heat from subcutaneous lipid-rich cells
CN101794839B (zh) * 2010-02-09 2011-08-10 中国科学院上海技术物理研究所 一种优化锑化铟光伏型探测器件吸收层厚度的方法
WO2012067766A2 (en) 2010-11-18 2012-05-24 3M Innovative Properties Company Light emitting diode component comprising polysilazane bonding layer
JP5216113B2 (ja) * 2011-02-24 2013-06-19 フェニックス電機株式会社 発光装置
KR20130035658A (ko) 2011-09-30 2013-04-09 서울옵토디바이스주식회사 발광 다이오드 소자용 기판 제조 방법
KR101306245B1 (ko) * 2012-01-17 2013-09-09 한국과학기술연구원 시간 분할 방식의 무안경식 3차원 영상표시장치
DE102015105693B4 (de) * 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
JP6294435B1 (ja) * 2016-11-07 2018-03-14 日機装株式会社 流体殺菌装置

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Also Published As

Publication number Publication date
EP2036135A4 (en) 2013-11-13
EP2033234A1 (en) 2009-03-11
WO2007146868A1 (en) 2007-12-21
CN101467271A (zh) 2009-06-24
TW200807768A (en) 2008-02-01
JP2009540618A (ja) 2009-11-19
CN101467271B (zh) 2012-04-25
WO2007146861A1 (en) 2007-12-21
CN102403439A (zh) 2012-04-04
KR20090018631A (ko) 2009-02-20
US20090207628A1 (en) 2009-08-20
EP2036135A1 (en) 2009-03-18
JP2009540616A (ja) 2009-11-19
TW200817804A (en) 2008-04-16
EP2033234A4 (en) 2013-11-06
US7541610B2 (en) 2009-06-02
CN101467275A (zh) 2009-06-24
US20080006832A1 (en) 2008-01-10
KR20090018623A (ko) 2009-02-20

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