CN101458966B - 存储器及半导体装置 - Google Patents

存储器及半导体装置 Download PDF

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Publication number
CN101458966B
CN101458966B CN200810190316.6A CN200810190316A CN101458966B CN 101458966 B CN101458966 B CN 101458966B CN 200810190316 A CN200810190316 A CN 200810190316A CN 101458966 B CN101458966 B CN 101458966B
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CN
China
Prior art keywords
state
layer
electrode
antifuse
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200810190316.6A
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English (en)
Chinese (zh)
Other versions
CN101458966A (zh
Inventor
德永肇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101458966A publication Critical patent/CN101458966A/zh
Application granted granted Critical
Publication of CN101458966B publication Critical patent/CN101458966B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/699—Insulating or insulated package substrates; Interposers; Redistribution layers for flat cards, e.g. credit cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive

Landscapes

  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Read Only Memory (AREA)
CN200810190316.6A 2007-12-14 2008-12-15 存储器及半导体装置 Expired - Fee Related CN101458966B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-323241 2007-12-14
JP2007323241 2007-12-14
JP2007323241 2007-12-14

Publications (2)

Publication Number Publication Date
CN101458966A CN101458966A (zh) 2009-06-17
CN101458966B true CN101458966B (zh) 2015-04-01

Family

ID=40752007

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810190316.6A Expired - Fee Related CN101458966B (zh) 2007-12-14 2008-12-15 存储器及半导体装置

Country Status (4)

Country Link
US (1) US8735885B2 (cg-RX-API-DMAC10.html)
JP (1) JP5371400B2 (cg-RX-API-DMAC10.html)
CN (1) CN101458966B (cg-RX-API-DMAC10.html)
TW (1) TWI478408B (cg-RX-API-DMAC10.html)

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US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
US8519509B2 (en) * 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9342775B2 (en) * 2011-11-01 2016-05-17 Avery Dennison Corporation Dual mode chip having radio frequency identification and electronic article surveillance capability
CN104463266B (zh) * 2014-10-31 2018-07-10 江苏凯路威电子科技有限公司 Rfid防伪方法及芯片
US10476680B2 (en) * 2016-02-03 2019-11-12 Ememory Technology Inc. Electronic device with self-protection and anti-cloning capabilities and related method
CN106372498B (zh) * 2016-09-05 2020-08-28 新华三技术有限公司 一种软件保护的方法和装置
US10446248B1 (en) 2018-04-23 2019-10-15 Micron Technology, Inc. Non-volatile memory devices and systems with read-only memory features and methods for operating the same
US11049565B2 (en) * 2018-04-23 2021-06-29 Micron Technology, Inc. Non-volatile memory devices and systems with volatile memory features and methods for operating the same
CN113540076B (zh) * 2021-07-20 2024-11-05 立讯电子科技（昆山）有限公司 一种开关元件和电子设备

Citations (2)

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Publication number Priority date Publication date Assignee Title
CN1169016A (zh) * 1996-03-01 1997-12-31 三菱电机株式会社 半导体存储装置
CN1519861A (zh) * 2003-01-10 2004-08-11 ���µ�����ҵ��ʽ���� 半导体存储装置

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JPS60117660A (ja) 1983-11-30 1985-06-25 Fujitsu Ltd 半導体記憶装置
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EP0592078A1 (en) * 1992-09-23 1994-04-13 Actel Corporation Antifuse element and fabrication method
US5426614A (en) * 1994-01-13 1995-06-20 Texas Instruments Incorporated Memory cell with programmable antifuse technology
JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
US5468680A (en) * 1994-03-18 1995-11-21 Massachusetts Institute Of Technology Method of making a three-terminal fuse
JP3501416B2 (ja) 1994-04-28 2004-03-02 忠弘 大見 半導体装置
DE69704204T2 (de) 1996-03-01 2001-07-12 Mitsubishi Denki K.K., Tokio/Tokyo Halbleiterspeichergerät, um Fehlfunktion durch Spaltenauswahlleitungsunterbrechung oder Zeilenauswahlleitungsunterbrechung zu vermeiden
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US20030062594A1 (en) * 2001-10-01 2003-04-03 Chin-Yang Chen Anti-fuse structure with low on-state resistance and low off-state leakage
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US20040108573A1 (en) * 2002-03-13 2004-06-10 Matrix Semiconductor, Inc. Use in semiconductor devices of dielectric antifuses grown on silicide
US6946719B2 (en) * 2003-12-03 2005-09-20 Matrix Semiconductor, Inc Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
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JP4860160B2 (ja) 2004-02-10 2012-01-25 株式会社半導体エネルギー研究所 半導体装置
JP4515134B2 (ja) 2004-04-06 2010-07-28 成田国際空港株式会社 航空手荷物管理システム
JP2005045282A (ja) 2004-10-04 2005-02-17 Foundation For Advancement Of International Science 半導体装置
JP5046525B2 (ja) 2005-02-28 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
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TWI411095B (zh) * 2005-09-29 2013-10-01 半導體能源研究所股份有限公司 記憶裝置
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JP5525694B2 (ja) 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
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CN1519861A (zh) * 2003-01-10 2004-08-11 ���µ�����ҵ��ʽ���� 半导体存储装置

Also Published As

Publication number Publication date
US20090152549A1 (en) 2009-06-18
TWI478408B (zh) 2015-03-21
TW200937692A (en) 2009-09-01
JP2009164587A (ja) 2009-07-23
US8735885B2 (en) 2014-05-27
CN101458966A (zh) 2009-06-17
JP5371400B2 (ja) 2013-12-18

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Granted publication date: 20150401

Termination date: 20201215