CN101438416B - 从金属间微米薄片颗粒的半导体前体层的高生产量印刷 - Google Patents

从金属间微米薄片颗粒的半导体前体层的高生产量印刷 Download PDF

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Publication number
CN101438416B
CN101438416B CN2007800145850A CN200780014585A CN101438416B CN 101438416 B CN101438416 B CN 101438416B CN 2007800145850 A CN2007800145850 A CN 2007800145850A CN 200780014585 A CN200780014585 A CN 200780014585A CN 101438416 B CN101438416 B CN 101438416B
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China
Prior art keywords
microflakes
particles
group
intermetallic
layer
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Expired - Fee Related
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CN2007800145850A
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English (en)
Chinese (zh)
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CN101438416A (zh
Inventor
耶罗恩·K·J·范杜伦
马修·R·鲁滨逊
克雷格·R·莱德赫尔姆
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Priority claimed from US11/362,266 external-priority patent/US20070169813A1/en
Priority claimed from US11/361,498 external-priority patent/US20070163639A1/en
Priority claimed from US11/361,521 external-priority patent/US20070163383A1/en
Priority claimed from US11/361,688 external-priority patent/US20070169812A1/en
Priority claimed from US11/361,515 external-priority patent/US20070163640A1/en
Priority claimed from US11/361,433 external-priority patent/US7700464B2/en
Priority claimed from US11/361,497 external-priority patent/US20070163638A1/en
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Priority claimed from US11/395,426 external-priority patent/US20070163642A1/en
Priority claimed from US11/394,849 external-priority patent/US20070163641A1/en
Priority claimed from US11/395,668 external-priority patent/US8309163B2/en
Application filed by Individual filed Critical Individual
Publication of CN101438416A publication Critical patent/CN101438416A/zh
Application granted granted Critical
Publication of CN101438416B publication Critical patent/CN101438416B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CN2007800145850A 2006-02-23 2007-02-23 从金属间微米薄片颗粒的半导体前体层的高生产量印刷 Expired - Fee Related CN101438416B (zh)

Applications Claiming Priority (27)

Application Number Priority Date Filing Date Title
US11/361,515 US20070163640A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US11/361,433 US7700464B2 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/362,266 2006-02-23
US11/361,497 US20070163638A1 (en) 2004-02-19 2006-02-23 Photovoltaic devices printed from nanostructured particles
US11/361,498 2006-02-23
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/362,266 US20070169813A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US11/361,433 2006-02-23
US11/361,688 US20070169812A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/361,688 2006-02-23
US11/361,515 2006-02-23
US11/361,498 US20070163639A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US11/361,521 US20070163383A1 (en) 2004-02-19 2006-02-23 High-throughput printing of nanostructured semiconductor precursor layer
US11/361,521 2006-02-23
US11/361,497 2006-02-23
US11/361,522 2006-02-23
US39619906A 2006-03-30 2006-03-30
US11/396,199 2006-03-30
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
US11/395,426 2006-03-30
US11/395,426 US20070163642A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles
US11/395,438 2006-03-30
US11/395,668 2006-03-30
US11/394,849 US20070163641A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US11/394,849 2006-03-30
US11/395,668 US8309163B2 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
PCT/US2007/062763 WO2007101135A2 (en) 2006-02-23 2007-02-23 High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2011102732068A Division CN102593237A (zh) 2006-02-23 2007-02-23 从金属间微米薄片颗粒的半导体前体层的高生产量印刷

Publications (2)

Publication Number Publication Date
CN101438416A CN101438416A (zh) 2009-05-20
CN101438416B true CN101438416B (zh) 2011-11-23

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CN2007800145850A Expired - Fee Related CN101438416B (zh) 2006-02-23 2007-02-23 从金属间微米薄片颗粒的半导体前体层的高生产量印刷

Country Status (4)

Country Link
EP (1) EP1997149A2 (cg-RX-API-DMAC7.html)
JP (1) JP2009540537A (cg-RX-API-DMAC7.html)
CN (1) CN101438416B (cg-RX-API-DMAC7.html)
WO (1) WO2007101135A2 (cg-RX-API-DMAC7.html)

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FR2922046B1 (fr) * 2007-10-05 2011-06-24 Saint Gobain Perfectionnements apportes a des elements capables de collecter de la lumiere
US8322300B2 (en) 2008-02-07 2012-12-04 Sunpower Corporation Edge coating apparatus with movable roller applicator for solar cell substrates
JP2010129648A (ja) * 2008-11-26 2010-06-10 Kyocera Corp 薄膜太陽電池の製法
JP5137794B2 (ja) * 2008-11-26 2013-02-06 京セラ株式会社 薄膜太陽電池の製法
JP5317648B2 (ja) * 2008-11-26 2013-10-16 京セラ株式会社 薄膜太陽電池の製法
JP5383162B2 (ja) * 2008-11-26 2014-01-08 京セラ株式会社 薄膜太陽電池の製法
CN101931011A (zh) * 2009-06-26 2010-12-29 安泰科技股份有限公司 薄膜太阳能电池及其基带和制备方法
JP2011138837A (ja) * 2009-12-26 2011-07-14 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
CN101853885A (zh) * 2010-02-10 2010-10-06 昆山正富机械工业有限公司 太阳能吸收层浆料的制造方法、该浆料及吸收层
CN101826574A (zh) * 2010-02-10 2010-09-08 昆山正富机械工业有限公司 非真空制作铜铟镓硒光吸收层的方法
CN101820032A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 一种非真空环境下配置铜铟镓硒浆料制作光吸收层的方法
CN101840957A (zh) * 2010-02-11 2010-09-22 昆山正富机械工业有限公司 非真空制作铜铟镓硒浆料的调配方法
CN101840958A (zh) * 2010-02-11 2010-09-22 昆山正富机械工业有限公司 一种非真空制作铜铟镓硒浆料的方法
JP5495849B2 (ja) * 2010-02-25 2014-05-21 京セラ株式会社 半導体層の製造方法および光電変換装置の製造方法
JP2012009546A (ja) * 2010-06-23 2012-01-12 Hitachi Ltd 薄膜製造方法、薄膜付基板および薄膜製造装置
WO2011162865A2 (en) * 2010-06-23 2011-12-29 Applied Materials, Inc. A nucleation promotion layer formed on a substrate to enhance deposition of a transparent conductive layer
CN102464912A (zh) * 2010-11-19 2012-05-23 慧濠光电科技股份有限公司 具有光吸收功能的纳米晶粒的油墨及其制作方法
WO2012075259A1 (en) * 2010-12-03 2012-06-07 E. I. Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
JP5764016B2 (ja) * 2011-09-07 2015-08-12 日東電工株式会社 Ｃｉｇｓ膜の製法およびそれを用いるｃｉｇｓ太陽電池の製法
JP5658112B2 (ja) * 2011-09-15 2015-01-21 本田技研工業株式会社 カルコパイライト型太陽電池の製造方法
WO2013109646A1 (en) * 2012-01-19 2013-07-25 NuvoSun, Inc. Protective coatings for photovoltaic cells
DE102012214254A1 (de) * 2012-08-10 2014-05-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laserbasiertes Verfahren und Bearbeitungstisch zur lokalen Kontaktierung eines Halbleiterbauelements
CN104051569B (zh) * 2013-03-12 2017-09-26 台湾积体电路制造股份有限公司 薄膜太阳能电池及其制造方法
KR101638470B1 (ko) 2013-07-19 2016-07-11 주식회사 엘지화학 금속 나노 입자를 포함하는 광흡수층 제조용 잉크 조성물 및 이를 사용한 박막의 제조 방법
CN110240830B (zh) * 2018-03-09 2022-10-18 国家纳米科学中心 基于液态金属颗粒的自烧结导电墨水、其制备方法及应用

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US5383995A (en) * 1979-12-28 1995-01-24 Flex Products, Inc. Method of making optical thin flakes and inks incorporating the same

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WO2002084708A2 (en) * 2001-04-16 2002-10-24 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
US7537955B2 (en) * 2001-04-16 2009-05-26 Basol Bulent M Low temperature nano particle preparation and deposition for phase-controlled compound film formation

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US5383995A (en) * 1979-12-28 1995-01-24 Flex Products, Inc. Method of making optical thin flakes and inks incorporating the same

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Publication number Publication date
CN101438416A (zh) 2009-05-20
WO2007101135A3 (en) 2008-02-07
WO2007101135A2 (en) 2007-09-07
JP2009540537A (ja) 2009-11-19
EP1997149A2 (en) 2008-12-03

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Granted publication date: 20111123

Termination date: 20160223