CN101432095B - 泡沫焊锡和电子器件 - Google Patents

泡沫焊锡和电子器件 Download PDF

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Publication number
CN101432095B
CN101432095B CN2007800154188A CN200780015418A CN101432095B CN 101432095 B CN101432095 B CN 101432095B CN 2007800154188 A CN2007800154188 A CN 2007800154188A CN 200780015418 A CN200780015418 A CN 200780015418A CN 101432095 B CN101432095 B CN 101432095B
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Prior art keywords
solder
scolding tin
metallic particles
semiconductor element
foam
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CN101432095A (zh
Inventor
平野尚彦
坂本善次
奥村知巳
鹤田加一
上岛稔
石井隆
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Electric installation of the company
Senju Metal Industry Co Ltd
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Denso Corp
Senju Metal Industry Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/40—Making wire or rods for soldering or welding
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Abstract

本发明提供泡沫焊锡和电子器件。将半导体元件和基板通过焊锡接合而成的电子器件，会由于半导体元件和基板之间的间隙不适当而导致接合强度降低。因此在制造电子器件时采用在焊锡中分散高熔点金属颗粒而成的泡沫焊锡。但是在使用现有的焊锡来制造电子器件时，存在半导体元件倾斜或接合强度不足的问题。在本发明的泡沫焊锡中，当金属粒径为50μm时，高熔点金属颗粒的尺寸偏差在20μm以下，并且在高熔点金属颗粒的周围形成有高熔点金属颗粒与焊锡的主要成分构成的合金层。并且焊锡中完全没有空隙。另外，本发明的电子器件通过上述泡沫焊锡将半导体元件和基板接合而成，热循环性优良。

Description

泡沫焊锡和电子器件
技术领域
本发明涉及接合半导体元件和基板的管芯焊接用的泡沫焊锡(フオ一ム半田)。本发明还涉及使用这种泡沫焊锡进行接合的半导体元件和基板所构成的电子器件。 
背景技术
在BGA(Ball Grid Array Package)、CSP(Chip Size Package)等高性能电子器件等中，将半导体元件和基板通过接合材料以管芯焊接方式接合。管芯焊接这种接合方式是将切割硅晶片得到的半导体元件固定于其支撑基板的工艺。对半导体元件和基板进行管芯焊接，能够防止在电子设备使用时由于半导体元件发热而导致半导体自身由于该发热的影响而使性能降低或者受到热损伤。即，通过对半导体元件和基板进行管芯焊接，能够使半导体元件和基板紧密接触而半导体元件的热量从基板散热。另外，管芯焊接还用于从半导体元件接地。 
这种管芯焊接通常使用的材料是粘接性树脂和焊锡。虽然粘接性树脂能够满足半导体元件的散热要求，但是优选使用焊锡，因为焊锡的导热性和导电性都非常好，能够同时满足散热和接地的要求。 
另外，在对半导体元件和基板进行管芯焊接时，将泡沫焊锡置于基板上加热，当泡沫焊锡融化时由于半导体元件的重量会将熔融焊锡从焊接部挤出，从而导致焊接部上的焊锡量减少。使用焊锡进行焊接是通过在焊接部上保持适量的焊锡来发挥焊锡固有的接合强度，然而在如上所述由于上方的半导体元件的重量将焊接部的熔融焊锡挤出时，半导体元件和基板之间的间隙变得过小，无法保持足够量的焊锡而导致接合强度降低。即，在焊锡接合中当间隙适当时能够获得最大的接合强度，局部出现间隙小的部分时则导致接合部整体的接合强度降低。 
因此，以往在适当保持焊接部间隙的状态下进行焊接，为了在焊接部上保持适量的焊锡，在焊接部上通过焊锡夹入多个熔点较高的高熔点金属颗粒(以下简称为金属颗粒)例如Ni、Cu、Ag、Mo、W等的金属颗粒。但是，在每次进行焊接时都在焊接部上安置金属颗粒非常耗时而会降低生产效率，因此使用预先在焊锡中分散金属颗粒的泡沫焊锡。 
在专利文献1中公开了，在片状焊锡上通过料斗散布金属颗粒，埋入该金属颗粒并通过辊子埋入板状焊锡中，即滚压埋入法。此时，金属颗粒可以采用圆形、三角形、柱状、片状、微小颗粒状等形式。 
在专利文献2中也公开了滚压埋入法，是在焊锡中埋入粒径30～70μm的金属颗粒而得到泡沫焊锡。 
专利文献3公开了混杂金属颗粒的复合焊锡坯料的制造方法，在该方法中，将金属颗粒与焊剂的混合物投入熔融焊锡中搅拌、冷却、固化。这里采用的金属颗粒的粒径为20μm、50μm、100μm。 
专利文献4公开的泡沫焊锡的制造方法，制造在两枚焊锡片之间具有通过料斗散布的金属颗粒的层叠片，然后对其进行压延而形成使两枚焊锡片压接的泡沫焊锡。采用金属颗粒直径平均值为30～300μm而直径分布的标准偏差为2.0μm以下的金属颗粒。 
专利文献1：特开平3-281088号公报 
专利文献2：特开平6-685号公报 
专利文献3：特开平6-31486号公报 
专利文献4：特开2005-161338号公报 
发明内容
但是，通过现有的泡沫焊锡进行焊接的半导体元件和基板所构成的电子器件，会发生半导体元件相对于基板倾斜地接合，或者当焊接部受到微小冲击时焊接部容易剥离的情况。 
专利文献1的泡沫焊锡在片状焊锡上散布圆形、三角形、片状、柱状等的金属颗粒，并且从上部进行滚压而将金属颗粒埋入片状焊锡中。 
图3是专利文献1的焊锡泡沫的模式化剖面图，图4是使用该焊锡泡沫进行管芯焊接的半导体元件和基板所构成的电子器件的模式化局部放大 图。 
如图3所示，专利文献1的泡沫焊锡30由于金属颗粒的大小不确定，因此在对半导体元件31和基板32进行接合而生成电子器件33(图4)时，小的金属颗粒(图中三角形)较低，大的金属颗粒(图中大的圆形或四边形)较高。另外，专利文献1的泡沫焊锡从微观角度看，金属颗粒34与片状焊锡35之间为简单接触状态，即在金属颗粒34的周围存在空气36。 
这样，如果通过在金属颗粒的周围存在空气的泡沫焊锡对半导体元件和基板进行焊接，则由于在金属颗粒周围存在的空气随着温度上升而体积增大，图4所示形成有较大空隙37的焊锡会使半导体元件倾斜。并且当金属颗粒与焊锡不是金属性接合时，该部分的接合强度会减弱。 
专利文献2、4的泡沫焊锡在两枚片状焊锡之间夹入金属颗粒并通过滚压将两枚片状焊锡压接而成。因此，如图5所示，专利文献2、4的泡沫焊锡40也是金属颗粒41与焊锡42简单接触，从微观角度看，在金属颗粒41的周围存在空气43。将这种泡沫焊锡置于半导体元件44和基板45之间加热，使泡沫焊锡熔融而形成电子器件46，则如图6所示，金属颗粒周围存在的极少量空气随温度上升而体积增大，形成较大的空隙47。并且，该较大空隙顶起半导体元件44而使其倾斜。 
这样，专利文献2、4的情况也与专利文献1的情况同样地，由于金属颗粒与焊锡不是金属性接合而使该部分的接合强度较弱。 
通过专利文献3的方法得到的泡沫焊锡，是将金属颗粒与焊剂的混合物投入熔融焊锡中得到的，因此金属颗粒与熔融金属是金属性接合的，与使用滚压的制造方法相比空隙较少。但是，通过专利文献3的制造方法得到的泡沫焊锡，也会由于产生空隙而使半导体元件倾斜，或者接合强度降低。其原因在于，金属颗粒的周围附着有焊剂。 
图7是专利文献3的焊锡泡沫的模式化剖面图，图8是使用该焊锡泡沫进行管芯焊接的半导体元件和基板所构成的电子器件的模式化局部放大图。 
专利文献3的泡沫焊锡50，如图7所示，在金属颗粒51上附着有微小的固体或液体的焊剂52。因此，在将该泡沫焊锡夹入半导体元件53和基板54之间加热熔融而形成电子器件55时，微小的焊剂随着温度上升气化而体 积增大，如图8所示形成较大的空隙56。其结果是，较大的空隙将半导体元件53顶起。其后，为了固化焊锡而使焊接部冷却，但是急速的固化会导致空隙无法减小而保持体积增大的状态。因此，空隙体积增大的部分高度较高而导致倾斜。 
这样，在专利文献3的情况下，尽管技术颗粒与焊锡为金属性接合，但是由于产生了空隙使接合面积减小而降低了接合强度。 
另外，在通过现有的泡沫焊锡对半导体元件和基板进行焊接时，焊接部受到较小冲击即容易发生剥离的原因在于，金属颗粒与焊锡不是金属性接合而在金属颗粒周围产生空隙。即，如果金属颗粒与焊锡不是金属性接合，则该部分的接合强度会降低，并且即使在金属颗粒周围存在少量空气或焊剂，也会由于在加热时该空气或焊剂的体积增大而使接合面积减小。产生空隙而使接合面积减小的原因在于，当前的半导体元件具有小型化趋势，随着焊接面积的减小，空隙的比例相对于该较小的焊接面积增大，因此焊接面积减小而使接合强度降低。 
本发明人发现，当金属颗粒的粒径偏差为一定值以下时，倾斜减小，并且当金属颗粒的周围形成有与焊锡的合金层时，能够提高金属颗粒与焊锡的接合强度，在将该泡沫焊锡用于管芯焊接时，能够发挥优异的性能。基于该发现而完成本发明。 
本发明的泡沫焊锡，在板状焊锡中分散平均粒径20～300μm的高熔点金属颗粒而成，其特征在于，高熔点金属颗粒的粒子直径偏差为20μm以下，并且在高熔点金属颗粒的周围，形成焊锡的主成分与高熔点金属颗粒的合金层，而不存在焊剂。 
另外，本发明的电子器件，其通过泡沫焊锡将半导体元件和基板焊接而成，该泡沫焊锡在板状焊锡中分散平均粒径20～300μm的高熔点金属颗粒而成，在板状焊锡中分散粒径偏差为20μm以下的高熔点金属颗粒，并且在高熔点金属颗粒的周围形成有与焊锡的合金层。 
在本发明中，使用平均粒径20～300μm的高熔点金属的原因在于，半导体元件与基板之间需要20～300μm程度的间隙。考虑到需要的间隙，可以在该范围内选择平均粒径即可。 
此时，如果金属颗粒的平均粒径是50μm，则其偏差如果为粒径的40％ 以上即大于20μm，即使不产生空隙，半导体元件在焊接后也会相对于基板较大程度地倾斜，导致间隙小的部分的接合强度降低。而当金属颗粒周围形成有合金层时，则金属颗粒与焊锡完全地金属性接合，不仅提高了金属颗粒与焊锡的接合强度，而且减少的空隙的产生。 
这里，上述偏差的范围在金属颗粒的粒径的40％以内，优选为20％以内。 
在本发明的泡沫焊锡中，高熔点金属颗粒与焊锡的接合面上不会带入空气或残留焊剂，因此在焊接后也完全不会在接合部上形成空隙。 
本发明的泡沫焊锡必须在金属颗粒的周围形成与焊锡的合金层。在普通电子器件制造中可以使用多种焊锡，但是针对当前对Pb的限制而优选使用以Sn为主要成分的无铅焊锡。 
在焊锡中分散的金属颗粒优选为易于和作为无铅焊锡的主要成分的Sn形成合金的Ni、Ag、Cu、Fe等任意一个。在金属颗粒的周围形成的合金层，是Sn与金属颗粒的金属间化合物。例如当金属颗粒为Ni而焊锡为以Sn为主要成分的无铅焊锡时，在金属颗粒的表面形成Ni与Sn的金属间化合物即Ni3Sn、Ni3Sn2、Ni3Sn4等，当金属颗粒为Cu而焊锡为以Sn为主要成分的无铅焊锡时，在金属颗粒的表面形成Cu3Sn或Cu6Sn5等金属间化合物。 
这些金属的熔点都高达1000℃以上，在通常的焊锡温度下不会熔融。换言之，构成本发明使用的金属颗粒的金属(也包括合金)，是形成所用焊锡合金的主要成分和合金层(金属间化合物)并且熔融温度比焊锡合金的熔点高至少300℃以上的金属颗粒。 
发明的效果 
在使用本发明的泡沫焊锡对半导体元件和基板进行焊接时，不会使半导体元件相对于基板倾斜地接合，因此不会由于焊锡量不足而导致接合强度降低，并且由于在金属颗粒的周围形成有与焊锡的合金层，因此能够提高金属颗粒与焊锡的接合强度而获得优良的焊接部。 
本发明的电子器件，由于在半导体元件和基板之间的焊接部上没有空隙，并且半导体元件与基板的接合强度较高，因此即使受到来自外部的冲击也不易发生剥离，具有现有电子器件所不具备的可靠性。
本发明的电子器件是通过管芯焊接而得到的电子器件，具体而言，例如具有在称为管芯焊盘(die pad)的基板上进行管芯焊接的半导体元件的半导体装置，可以举出BGA、CSP等形式的电子器件。 
附图说明
图1是本发明的泡沫焊锡的模式化剖面图。 
图2是本发明的电子器件的模式化局部剖面图。 
图3是现有泡沫焊锡的模式化剖面图。 
图4是现有电子器件的模式化局部剖面图。 
图5是现有泡沫焊锡的模式化剖面图。 
图6是现有电子器件的模式化局部剖面图。 
图7是现有泡沫焊锡的模式化剖面图。 
图8是现有电子器件的模式化局部剖面图。 
图9是表示实施例与比较例的热循环实验结果的图表。 
具体实施方式
以下参照附图对本发明的泡沫焊锡进行说明。 
图1是本发明的泡沫焊锡的模式化剖面图。图2是使用本发明的泡沫焊锡进行焊接的半导体元件和基板所构成的电子器件的模式化局部剖面图。 
本发明的泡沫焊锡10，如图1所示，在板状焊锡2中分散有金属颗粒1。金属颗粒1与焊锡2金属性接合，在金属颗粒1的周围形成有合金层8。并且在金属颗粒1的周围没有空气或焊剂。 
将上述泡沫焊锡10置于半导体元件4和基板5之间加热熔融，使泡沫焊锡熔融而制成的电子器件12，如图2所示由半导体元件4与基板5平行接合而成，在分散于焊锡2中的金属颗粒1的周围完全没有空隙。 
本发明的泡沫焊锡的制造方法，以混合母合金法为例说明如下。 
首先，将比实际分散到焊锡中的量多的金属颗粒与可热分解的液态焊剂混合而形成混合物。将获得的混合物投入熔融焊锡中，经过搅拌后迅速冷却而形成混合母合金。对该混合母合金按照规定量进行计量，并且将其 投入熔融焊锡中进行搅拌后浇入铸型，迅速冷却而形成坯料。接着，将该坯料通过挤压机压出带状材料，并将所得带状材料通过压延机进行压延而形成条形材料。其后，对该条形材料冲裁为规定形状而成为在板状焊锡中分散有多个金属颗粒的泡沫焊锡。 
通过上述混合母合金法得到的泡沫焊锡，是将金属颗粒与可热分解的焊剂混合并投入熔融焊锡中得到的，因此不仅焊剂因挥发而不易在焊锡中残留，并且即使在混合母合金中残留有少量焊剂的情况下，也会由于进一步将混合母合金投入熔融焊锡中而使这里的焊剂完全挥发除去。并且在通过上述方法制作混合母合金时，金属颗粒与焊锡金属性接合，此时金属颗粒表面与熔融焊锡完全浸润。并且在将混合母合金投入熔融焊锡中时，浸润熔融焊锡的部分的合金层发展形成金属间化合物。 
上述混合母合金法采用的焊剂成分是松脂、活性剂、溶剂。该松脂例如是：加氢松脂、酚改性松香酯、聚合松脂等；活性剂例如是：己二酸、琥珀酸、马来酸、安息香酸、二乙基苯胺HBr等；而溶剂例如是：乙二醇甲醚、乙二醇乙醚、乙二醇丁醚、二甘醇甲醚、二甘醇乙醚、2-丙醇等。 
上述焊剂的松脂和活性剂，在例如Sn质量99％而添加微量Cu、Ni、P而成的Sn-Cu-Ni-P系无铅焊锡(熔点约230℃)与金属颗粒进行分散操作时，在285℃的温度下分解或者在焊锡浴表面上浮起分离而在焊锡中没有任何残留。并且上述溶剂的沸点为230℃以下，因此也会在该无铅焊锡的熔融温度下完全挥发而不会在焊锡中残留。优选的焊剂组成的一例如下所示。 
松脂(加氢松脂)质量60.0％ 
活性剂(二乙基苯胺HBr)质量10.0％ 
溶剂(乙二醇乙醚)质量30.0％ 
另外，如果将混合母合金投入大量的熔融焊锡中，则由于金属颗粒已经与焊锡金属性接合，因此该混合母合金在大量的熔融焊锡中以较短时间分散。此时，混合母合金内残留的焊剂，能够通过溶解搅拌而被完全除去。此后，将均匀分散有金属颗粒的熔融焊锡浇入坯料用铸型，通过使该铸型迅速冷却而获得金属颗粒均匀分散的坯料。 
在制作混合母合金时采用的混合物由可热分解的焊剂构成，因此在将混合物投入熔融焊锡中时，焊剂基本上全部分解挥发。因此，即使在混合 母合金中残留有极少量的焊剂，也会在其后的工序中将混合母合金投入熔融焊锡中时，使该焊剂完全分解而完全从焊锡中除去。如果希望进一步将焊锡中的焊剂完全除去，也可以在制作混合母合金或坯料时，将熔融焊锡置于真空装置内来进行真空处理。 
本发明的泡沫焊锡中分散的高熔点金属颗粒，必须是熔点比泡沫焊锡高并且金属颗粒易于在熔融焊锡中浸润的材料。可用于本发明的金属颗粒有Ni、Cu、Ag、Fe、Mo、W，而本发明中优选使用Ni的金属颗粒。Ni的金属颗粒不易侵蚀熔融焊锡，并且价格低廉，微小的球状颗粒作为市售产品易于获得。当然，也可以是这些金属的合金。 
如果半导体元件和基板之间的间隙小于20μm，则焊锡的量会减小，无法获得焊锡应有的接合强度，因此使金属颗粒的直径为20μm以上。优选40～300μm。 
通常，该泡沫焊锡的厚度采用大致与所希望的间隙接近的厚度。因此，用于该泡沫焊锡的金属颗粒也采用与该间隙接近的直径，但是如果泡沫焊锡的厚度与金属颗粒的直径相同，则当形成泡沫焊锡时会导致金属颗粒从焊锡的表面露出，而该露出的部分上不会附着焊锡。其结果会导致在焊接时露出金属颗粒的部分与器件成为非金属性接合。在厚度较厚的泡沫焊锡中，金属颗粒的直径相对于泡沫焊锡的厚度在上下部上保留被焊锡覆盖的余量，因此时金属颗粒的直径相对于泡沫焊锡的厚度为90％以下。 
本发明的泡沫焊锡可以是多种组分的合金，但是由于当前对Pb的使用限制而优选为无铅焊锡。无铅焊锡是以Sn为主要成分并对其适当添加Ag、Cu、Sb、Bi、In、Zn、Ni、Cr、Mo、Fe、Ge、Ga、P等而获得的。由于Sn容易侵蚀金属颗粒，因此在使用Ni金属颗粒的情况下，可以预先在无铅焊锡中夹入Ni。 
即，如果使无铅焊锡中含有Ni，则在将Ni的金属颗粒用作高熔点金属颗粒的情况下，当熔融的无铅焊锡与Ni的金属颗粒接触时，则不易发生对Ni金属颗粒的侵蚀。含Ni的无铅焊锡例如是：Sn-Cu-Ni-P系、Sn-Ag-Ni系、Sn-Cu-Ni系、Sn-Ag-Cu-Ni系、Sn-Zn-Ni系、Sn-Sb-Ni系、Sn-Bi-Ni系、Sn-In-Ni系等。 
条形材料例如通过压力冲裁等方式加工为各种形状，例如是圆片状、 垫片状等各种形式的泡沫焊锡。 
这里对本发明的实施例的比较例进行说明。 
实施例1 
泡沫焊锡：10×10×0.1(mm) 
泡沫焊锡的制造方法：混合母合金法 
金属颗粒：Ni(直径50μm，偏差10μm以内) 
焊锡：Sn-0.7Cu-0.06Ni-0.005P 
金属颗粒周围的金属间化合物：Ni3Sn、Ni3Sn2、Ni3Sn4
焊接方法：将10×10×0.3(mm)的半导体元件在30×30×0.3(mm)的基板(镀镍的铜基板)上通过泡沫焊锡进行管芯焊接。即，将泡沫焊锡夹入半导体元件与基板之间，在含氧浓度为10ppm的氮氢混合气环境中进行235℃以上3分钟、峰值温度280度、总回流时间15分钟的回流。 
实施例2 
泡沫焊锡：10×10×0.1(mm) 
泡沫焊锡的制造方法：混合母合金法 
金属颗粒：Cu(直径50μm，偏差10μm以内) 
焊锡：Sn-3Ag-0.5Cu 
金属颗粒周围的金属间化合物：Cu3Sn、Cu6Sn5
焊接方法：与实施例1相同 
(比较例1) 
泡沫焊锡：10×10×0.1(mm) 
泡沫焊锡的制造方法：滚压埋入法 
金属颗粒：Ni(直径50μm，偏差30μm以上) 
焊锡：Sn-0.7Cu-0.6Ni-0.05P 
金属颗粒周围的金属间化合物：无 
焊接方法：与实施例1相同 
对通过实施例1、2与比较例1的泡沫焊锡制作的电子器件的接合部使用X射线装置来观察是否存在空隙，在通过实施例1、2的泡沫焊锡制成的电子器件中都没有空隙，但是在通过比较例1制成的电子器件中存在空隙。由此可见，在本发明的泡沫焊锡中没有带入空气或者残留焊剂。
对通过实施例1、2与比较例1的泡沫焊锡制作的电子器件的周边厚度采用千分尺进行测定，在实施例1、2中最大厚度与最小厚度之差为20μm以内，而比较例1中最大厚度与最小厚度之差为60μm。 
对通过实施例1和比较例1的泡沫焊锡制作的电子器件，基于D001-87(JASO：社团法人汽车技术协会)，进行—30℃～＋120℃的热循环试验。 
图9是表示其结果的图表。在实施例中即使到达500次热循环也不会产生裂缝，但是在比较例中在500次热循环的时点产生了裂缝。并且针对3000次热循环时点的裂损率为20％以下的目标，在实施例中为10％以下的裂损率且偏差也较小。但在比较例中则为12～28％程度的裂损率而偏差较大，没有达到目标。

Claims (3)

1.一种泡沫焊锡，在板状焊锡中分散高熔点金属颗粒而成，其特征在于，上述金属颗粒具有焊锡合金的熔点+300℃以上的熔点，粒径为20～300μm，该高熔点金属颗粒的粒径偏差在粒径的40％以内，并且在高熔点金属颗粒的周围，形成焊锡的主成分与高熔点金属颗粒的合金层，而不存在焊剂。
2.如权利要求1所述的泡沫焊锡，其特征在于，上述高熔点金属颗粒是从Ni、Ag、Cu、Fe及它们的合金形成的组中选出的一种或者两种以上，焊锡是Sn为主成分的无铅焊锡，在高熔点金属颗粒的周围形成的合金层，是Sn与高熔点金属颗粒的金属间化合物。
3.一种电子器件，其特征在于，由采用权利要求1或2所述的泡沫焊锡进行软钎焊的半导体元件和基板构成，所述半导体元件和基板具有不会产生空隙并且最大厚度与最小厚度的偏差在金属粒径的40％以内的厚度的焊接结合部。
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WO2007125991A1 (ja) 2007-11-08

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