CN101431041A - Carrying bench, processing device and processing system - Google Patents
Carrying bench, processing device and processing system Download PDFInfo
- Publication number
- CN101431041A CN101431041A CNA2008101735851A CN200810173585A CN101431041A CN 101431041 A CN101431041 A CN 101431041A CN A2008101735851 A CNA2008101735851 A CN A2008101735851A CN 200810173585 A CN200810173585 A CN 200810173585A CN 101431041 A CN101431041 A CN 101431041A
- Authority
- CN
- China
- Prior art keywords
- mounting
- handled
- small pieces
- substrate
- mounting table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 58
- 230000007246 mechanism Effects 0.000 claims abstract description 49
- 238000009413 insulation Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 21
- 238000010521 absorption reaction Methods 0.000 claims description 16
- 238000009832 plasma treatment Methods 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 9
- 230000000630 rising effect Effects 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 157
- 238000000034 method Methods 0.000 abstract description 20
- 230000008569 process Effects 0.000 abstract description 15
- 238000007789 sealing Methods 0.000 abstract description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 60
- 239000007789 gas Substances 0.000 description 42
- 210000002381 plasma Anatomy 0.000 description 20
- 238000001020 plasma etching Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 16
- 230000006870 function Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 230000033228 biological regulation Effects 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 8
- 230000000803 paradoxical effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000008676 import Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Feeding Of Workpieces (AREA)
Abstract
The invention provides a loading station, a processing device and a processing system. The loading station can simultaneously conjoin a plurality of processed matters and process a plurality of processed matters, wherein a plurality of board type movable sealing members (123) are freely up-down and mutually separately arranged in the same direction on a connection mechanism (111) on a base (105). The movable sealing members (123) are not interfered with forks (23) of a conveying device (25) and are raised to a higher position than the forks (23). On the way, a flake substrate (S) loaded on the forks is simultaneously conjoined to the movable sealing members (123).
Description
Technical field
The present invention relates to mounting table, processing unit and the treatment system of handled object of the small-sized substrate etc. of mounting flat-panel monitor (FPD) usefulness for example with this mounting table.
Background technology
About being in the manufacture process of FPD of representative with liquid crystal indicator (LCD), under vacuum, handled objects such as glass substrate are implemented various processing such as etching, film forming, on handled object, form TFT electronic equipments such as (thin-film transistors).In FPD makes, adopt such method, promptly in order to improve treatment effeciency, an edge lengths reached on 1～2 meter the mounting table of large substrate mounting in container handling and after carrying out various processing, the method for dividing cutting board according to the size of product.
But, for example be accompanied by the increase of the needs of small-sized FPD product such as portable phone, portable game machine, solar panel etc. in recent years, also studying small-sized substrate (little plate base) is directly being carried out processing such as etching, film forming.Under the situation of handling little plate base, consider that from the viewpoint that suppresses manufacturing cost many little plate bases of etch processes have efficiency in the lump in large-scale container handling.
Under the situation of the little plate base of batch processing, many little plate bases can be stated from the pallet of plate-like and conveyance to container handling, connect pallet together mounting on mounting table and handle.But there is such problem in the method that is to use pallet, for example when plasma etch process etc., because of the effect of plasma can make pallet sustain damage.Therefore, need to adopt the periodic replacement pallet, or constitute countermeasures such as pallet, can not ignore the use cost of pallet with the high raw material of plasma-resistance.
In addition, in plasma etch process etc.,, adopt rear side to import cooling gas, suppress the measure of the temperature rising of substrate at substrate usually in order to improve the precision of etch processes.In this case, use the method for pallet to have other problem, because of using directly cooling base of pallet, cooling effectiveness reduces.
Use a problem again of pallet to be, owing to the handled object mounting need carried out conveyance under the state on the pallet, the quality of pallet has increased load for the transport mechanism of conveyance handled object.For fear of transport mechanism being increased load, the weight portion of corresponding pallet and reduce the processing number of handled object, then the treatment effeciency in the single treatment reduces.
In the lump with the substrate transfer system of many substrates to the mounting table conveyance, proposing has such technology as not using pallet, promptly, use the carrying arm (for example patent documentation 1) of the handle with the comb type shape that can support many substrates simultaneously.In the substrate transfer system of this patent documentation 1, the lifter pin that utilization can enter between broach configuration and liftable displacement carries out the handing-over of substrate between above-mentioned handle and mounting table.
2006-No. 294786 communiques of [patent documentation 1] TOHKEMY
Shown in patent documentation 1, many small pieces substrate delivery/receptions are being utilized in the technology of lifter pin on mounting table the time, once the quantity of Jiao Jie little plate base is if increase, and then therewith correspondingly, the quantity of lifter pin also has to increase.In order to support a little plate base, need 3～4 lifter pins.In order to make the displacement of many small pieces substrate elevatings, need a plurality of lifter pins, in mounting table so complicated mechanism need be set.In addition, under the situation of using lifter pin, can not be according to the number or the big or small configuration space and the radical that changes between the lifter pin of little plate base.Therefore, patent documentation 1 for example is not suitable for the purpose of handling together tens of little plate bases.
In addition, usually carrying out under the situation of plasma treatment, in order to improve the focusing of plasma, and prevent the paradoxical discharge of the mounting table of double as lower electrode, the so-called focusing ring that configuration is made of the insulating properties parts around mounting surface or the insulating properties parts of sealing ring.Under the situation of many little plate bases of plasma treatment in the lump, also need around little plate base, set the insulating properties parts because of same purpose.But, handling together under the situation of little plate base, do not make a search about the structure of the insulating properties parts that are used to realize above-mentioned functions.
Summary of the invention
The present invention finishes in view of the above problems, and its first purpose is to provide a kind of mounting table that can join a plurality of handled objects in the lump.In addition, another object of the present invention is to provide a kind of mounting table that can handle together a plurality of handled objects.
In order to address the above problem, the mounting table that a first aspect of the present invention relates to, it is the mounting handled object in processing unit, and it comprises: a plurality of mounting surfaces, a plurality of handled objects of its mounting; Connecting mechanism, it has lifting a plurality of movable members freely, these a plurality of movable members are being spaced from each other under the state parallel with above-mentioned mounting surface apart from arranging on equidirectional, by supporting handled object, between above-mentioned movable member and carrying device, carry out the handing-over of a plurality of handled objects in the lump by above-mentioned movable member.
In the mounting table of a first aspect of the present invention can be, above-mentioned movable member in the position of supporting a plurality of handled objects and decline with the handled object mounting on above-mentioned mounting surface, and between this movable member and above-mentioned carrying device, carry out the handing-over of handled object in the position of supporting a plurality of handled objects and rising.
In addition, in the mounting table of a first aspect of the present invention can be, above-mentioned movable member be made of the insulating properties material, surround above-mentioned mounting surface around, constitute the first insulating properties parts of the part of the insulation division that above-mentioned mounting surface is divided.
In addition, can be that above-mentioned insulation division has with the above-mentioned first insulating properties unit construction and surrounds the second insulating properties parts on every side of above-mentioned mounting surface in the mounting table of a first aspect of the present invention.
In addition, can be, to make above-mentioned insulation division become clathrate in the mounting table of a first aspect of the present invention by above-mentioned first insulating properties parts of orthogonal configuration and the above-mentioned second insulating properties parts.
In addition, can be that the stage portion to the handled object location is set on the above-mentioned first insulating properties parts in the mounting table of a first aspect of the present invention.
In addition, can be, the Electrostatic Absorption mechanism that absorption keeps handled object to be set in the mounting table of a first aspect of the present invention corresponding to above-mentioned each mounting surface.
In addition, can be on above-mentioned mounting surface, to be provided with the ejiction opening of the cooling at the cooling handled object back side in the mounting table of a first aspect of the present invention with gas.
A second aspect of the present invention provides a kind of processing unit, and it is handled together a plurality of handled objects, and it comprises: container handling; Be configured in the mounting table of the above-mentioned first aspect in the above-mentioned container handling.
The processing unit of second aspect present invention also can be the plasma processing apparatus by the plasma treatment handled object.
Third aspect present invention provides a kind of treatment system, and it comprises: the processing unit of handling together a plurality of handled objects; Carrying device with support component with the broach shape that supports a plurality of handled objects simultaneously, above-mentioned processing unit have container handling and in above-mentioned container handling the mounting table of a plurality of handled objects of mounting, above-mentioned mounting table has: a plurality of mounting surfaces of mounting handled object; Connecting mechanism, it has lifting a plurality of movable members freely, these a plurality of movable members are being spaced from each other under the state parallel with above-mentioned mounting surface apart from arranging on equidirectional, by supporting handled object, between the support component of above-mentioned movable member and above-mentioned broach shape, carry out the handing-over of a plurality of handled objects in the lump by above-mentioned movable member.
Mounting table of the present invention possesses connecting mechanism, support handled objects such as small pieces substrate by a plurality of movable members freely of lifting under the state parallel with mounting surface, between above-mentioned movable member and carrying device, carry out the handing-over of a plurality of handled objects in the lump, thereby do not need pallet, can solve and use pallet to carry out the of the prior art above-mentioned problems of handing-over in the lump of handled object.Particularly, owing to do not use pallet, play and to adopt the effect of the back side of Electrostatic Absorption mechanism or handled object being carried on the back the cold cold mechanism of the back of the body.In addition, compare with the prior art of handing-over in the lump of using lifter pin to carry out handled object, movable member can come displacement up and down with external simple elevating mechanism, oversimplifies outward so can play the structural Case of connecting mechanism, can join the effect of more handled object reliably in the lump.
In addition, in mounting table of the present invention, form above-mentioned movable member and as the first insulating properties parts by the insulating properties material, form under the situation of cancellate insulation division with the second insulating properties parts, when plasma treatment handled object in the lump, play the effect that can prevent the top paradoxical discharge on the mounting table reliably.In addition, cancellate insulation division has the function that makes plasma focus towards mounting in its inboard handled object, can do one's utmost to avoid the complicated of apparatus structure so play, the handled object of processing unit be carried out a large amount of in the lump effects of handling by simple structure.
Description of drawings
Fig. 1 is a stereogram of roughly representing to have the vacuum flush system of mounting table of the present invention.
Fig. 2 is the plane graph of the vacuum flush system of Fig. 1.
Fig. 3 is the sectional view of schematic configuration of the plasma-etching apparatus of expression first execution mode.
Fig. 4 is the stereogram of structure of the connecting mechanism of expression pedestal.
Fig. 5 is the plane graph of pedestal.
Fig. 6 is the sectional view that the VI-VI alignment of Fig. 5 is looked.
Fig. 7 is the sectional view that the VII-VII alignment of Fig. 5 is looked.
Fig. 8 is the sectional view that the VIII-VIII alignment of Fig. 5 is looked.
Fig. 9 is the accompanying drawing of handing-over in the lump of the little plate base between the movable seal member of explanation fork and pedestal.
Figure 10 is that explanation makes the fork that supports a plurality of little plate bases move to the accompanying drawing of the state on the pedestal.
Figure 11 is the movable seal member of explanation receives the state of a plurality of little plate bases from fork a accompanying drawing.
Figure 12 is the accompanying drawing of explanation with the state of a plurality of small pieces substrate-placings on pedestal.
Figure 13 is the stereogram that expression is formed with the fork of mounting portion.
Figure 14 is that expression is formed with the location and wants portion's stereogram with the movable seal member of notch.
Figure 15 is the accompanying drawing of explanation state of mounting small pieces substrate on the pedestal of the movable seal member with Figure 14.
Figure 16 is the sectional view of schematic configuration that expression has the plasma-etching apparatus of second execution mode.
Figure 17 is the accompanying drawing of explanation state of mounting small pieces substrate on the pedestal of the plasma-etching apparatus of Figure 16.
Symbol description
1a, 1b, 1c processing chamber
3 carrying rooms
5 load locking rooms
100 vacuum flush systems
101 container handlings
103 insulating properties parts
105 pedestals
107 base materials
The 107a mounting surface
111 connecting mechanism portions
117a, 117b insulating properties parts
121 fixing seal parts
123 movable seal members
125 clathrate insulation divisions
131 shower nozzles
133 gaseous diffusion spaces
135 gas squit holes
137 gas introduction ports
139 handle gas supply pipe
151 exhaust outlets
153 blast pipes
155 exhaust apparatus
171 supply lines
173 matching boxes
175 high frequency electric sources
187 bars
189 links
191 driving shafts
193 drive divisions
200,201 plasma-etching apparatus
Embodiment
(first execution mode)
Below the execution mode that present invention will be described in detail with reference to the accompanying.At this, be that example describes with the plasma-etching apparatus of first execution mode and vacuum flush system with this plasma Etaching device with mounting table of the present invention.Fig. 1 is a stereogram of roughly representing vacuum flush system 100, and Fig. 2 is a plane graph of roughly representing the inside of each chamber.This vacuum flush system 100 constitutes the multi-cavity cell structure with a plurality of processor 1a, 1b, 1c.Vacuum flush system 100 carries out the treatment system of plasma treatment and constitutes as the small pieces glass substrate that is used for for example FPD is used (note is made " little plate base " to place an order) S.In addition, but as FPD illustration liquid crystal indicator (LCD), luminescence generated by light (Electro Luminescence; EL) display, plasma display (PDP) etc.
In vacuum flush system 100, a plurality of large-scale chambers plane is seen and is connected into cross shape.Dispose carrying room 3 at central portion, have couple small pieces substrate S to carry out three processing chamber 1a, 1b, the 1c of plasma treatment with its three side disposed adjacent.In addition, the adjacent load locking room 5 that is equipped with residue one side of carrying room 3.These three processing chamber 1a, 1b, 1c, carrying room 3 and load locking room 5 all constitute vacuum chamber.Between carrying room 3 and each processing chamber 1a, 1b, 1c, be provided with not shown peristome, on this peristome, be equipped with respectively and have the gate valve 7a that opens and closes function.In addition, between carrying room 3 and load locking room 5, be equipped with gate valve 7b.Gate valve 7a, 7b be in off position down with gas-tight seal between each chamber, and make under open mode and be communicated with between chamber and can transfer small pieces substrate S.In addition, between load locking room 5 and atmosphere outside atmosphere, also be equipped with gate valve 7c, keep the air-tightness of load locking room 5 in off position down, and under open mode, can transfer small pieces substrate S in load locking room 5 and between the outside.
Be provided with two box protractors (cassette indexer) 9a, 9b in the outside of load locking room 5.Mounting is accommodated box body 11a, the 11b of small pieces substrate S respectively on each box protractor 9a, 9b.Partition distance is the base plate supports body (not shown) that multi-layer configuration supports many small pieces substrate S up and down in each box body 11a, 11b.In addition, each box body 11a, 11b by the 13a of elevating mechanism portion, 13b respectively lifting constitute freely.In the present embodiment, for example can in box body 11a, accommodate untreatment base, in another box body 11b, accommodate the substrate of finishing dealing with.
Between these two box body 11a, 11b, be provided with the carrying device 15 that is used for conveyance small pieces substrate S.This carrying device 15 has: the fork 17a of two-layer setting and fork 17b up and down; Can pass in and out, keep out of the way and support rotatably the drive division 19 of these two fork 17a and 17b; With the brace table 21 that supports this drive division 19.
In the present embodiment, also can in three processing chamber 1a, 1b, 1c, carry out processing of the same race, also can carry out different types of processing each process chamber.In addition, the number of process chamber is not limited to three, also can be more than four.
Carrying room 3 similarly forms the reduced atmosphere that remains on regulation with processing chamber 1a～1c as vacuum processing chamber.In carrying room 3, as shown in Figure 2, set fork 23a, 23b and (only illustrate the fork 23a on upper strata with two-layer setting up and down.Below note is made " fork 23 ") carrying device 25.The fork 23 of carrying device 25 has a base portion 26a and a plurality of (in the present embodiment being 4) the thin tabular support component 26b that is fixed on this base portion 26a.Fork 23 can pass in and out, keep out of the way and constitute rotatably.Fork 23 can support many small pieces substrate S in the lump.And, between three processing chamber 1a, 1b, 1c and load locking room 5, carry out the conveyance in the lump of small pieces substrate S by carrying device 25.
Load locking room 5 and each processing chamber 1a～1c and carrying room 3 similarly can remain on the reduced atmosphere of regulation.Load locking room 5 is used for carrying out giving and accepting of small pieces substrate S between the carrying room 3 of the box body 11a, the 11b that are in air atmosphere and reduced atmosphere.Load locking room 5 is because of air atmosphere and reduced atmosphere repeatedly, and its internal capacity is done one's utmost to form for a short time.On load locking room 5 with the two-layer substrate resettlement section 27 (only illustrating the upper strata among Fig. 2) of temporarily accommodating small pieces substrate S that is provided with up and down.The a plurality of elongated mounting parts 29 that support small pieces substrate S are set on each substrate resettlement section 27.Narrower between the adjacent mounting parts 29 than the width of small pieces substrate S, and wideer than the width of the base plate supports portion (for example support component 26b of fork 23) of the fork 23 of fork 17a, the fork 17b of carrying device 15 and carrying device 25.Therefore, formation can make to stride establishes that the small pieces substrate S that is positioned on the adjacent mounting parts 29 is held by fork 17a, 17b and fork 23 easily and the structure that receives, or from fork 17a, 17b and fork 23 small pieces substrate S is handed off to structure on the mounting parts 29 on the contrary.
As shown in Figure 2, each component part of vacuum flush system 100 forms with control part 30 and is connected and controlled structure (omitting diagram among Fig. 1).Control part 30 comprises: controller 31, user interface 32 and storage part 33 with CPU.Controller 31 for example is all together each structure division such as control processing chamber 1a～1c, carrying device 15, carrying device 25 in vacuum flush system 100.In order to make engineering management person manage vacuum flush system 100, user interface 32 is made of display of the function status of the keyboard of input operation of instructing etc., visualization display vacuum flush system 100 etc.Storage part 33 is in store to store the scheme that the control that is used for by controller 31 realizes the control program (software) of the various processing carried out by vacuum flush system 100 and treatment conditions data etc.User interface 32 is connected with controller 31 with storage part 33.
And, as required and by reading arbitrarily scheme and carry out from storage part 33, thereby under the control of controller 31, carry out the desirable processing under the vacuum flush system 100 by controller 31 from the indication at user interface 32 etc.
Schemes such as described control program and treatment conditions data can be utilized the content under the state that is accommodated in computer read/write memory medium, for example CD-ROM, hard disk, floppy disk, the flash memories etc.Perhaps, also can for example transmit at any time and online utilization from other devices via special circuit.
The action of the vacuum flush system 100 that constitutes as described above then, is described.
At first, advance and retreat drive two fork 17a, 17b of carrying device 15, receive many small pieces substrate S from the box body 11a that contains untreatment base, and mounting is in the bilevel substrate resettlement section 27 of load locking room 5 respectively.
After fork 17a, 17b are kept out of the way, close the gate valve 7c of the atmospheric side of load locking room 5.Afterwards, to carrying out exhaust in the load locking room 5, make inner pressure relief to the specified vacuum degree.Then, open the gate valve 7b between carrying room 3 and the load locking room 5, the fork 23 by carrying device 25 is housed in many small pieces substrate S in the substrate resettlement section 27 of load locking room 5 in the lump.
Then,, many small pieces substrate S are moved among any of processing chamber 1a, 1b, 1c, be handed off to pedestal 105 in the lump by the fork 23 of carrying device 25.Then, in processing chamber 1a, 1b, 1c, many small pieces substrate S are carried out predetermined process such as etching.Then, many small pieces substrate S that finish dealing with are handed off on the fork 23 of carrying device 25 in the lump from pedestal 105, take out of from processing chamber 1a, 1b, 1c.To describe in detail in the back about the fork 23 that carries out in above process and the connecting mechanism in the lump of the small pieces substrate S between the pedestal 105.
Then, many small pieces substrate S with above-mentioned opposite path on be housed among the box body 11b by carrying device 15 via load locking room 5.In addition, also the small pieces substrate S that finishes dealing with can be sent back to original box body 11a.
Then, with reference to Fig. 3～Fig. 8, an example that the mounting table of present embodiment is described and has a processing unit of this mounting table is the plasma-etching apparatus of one embodiment of the present invention.Fig. 3 is the sectional view of the schematic configuration of the expression plasma-etching apparatus 200 that can be suitable for as processing chamber 1a, 1b or 1c.
As shown in Figure 3, plasma-etching apparatus 200 carries out the parallel flat plasma-etching apparatus of etched capacitive coupling type as many small pieces substrate S to rectangle and constitutes.
This plasma Etaching device 200 has the container handling that forms the square tube shape 101 of being handled the aluminium formation of (anodized) by for example surperficial oxidized aluminium.The insulating properties parts 103 of the bottom configuration block shape in this container handling 101.On insulating properties parts 103, be provided with the conduct pedestal 105 of the mounting table of many small pieces substrates of mounting S simultaneously.Respectively in Fig. 4 the expression pedestal 105 stereoscopic figure, in Fig. 5 the expression pedestal 105 plane graph.In addition, the cross section that the VI-VI alignment of presentation graphs 5 is looked in Fig. 6 respectively, the cross section that the VII-VII alignment of presentation graphs 5 is looked in Fig. 7, the cross section that the VIII-VIII alignment of presentation graphs 5 is looked in Fig. 8.In addition, the cross section structure of the pedestal 105 of Fig. 3 is cross sections that the III-III alignment among Fig. 5 is looked.
Also, have: base material 107 as main structure as the pedestal 105 of lower electrode; Surround insulating properties parts 117a, the 117b of base material 107; With the connecting mechanism portion 111 that has as the movable seal member 123 of movable member.Connecting mechanism portion 111 can join small pieces substrate S in the lump between the fork 23 of itself and carrying device 25.
In addition, on base material 107, form concavo-convexly, on its protuberance, be formed with a plurality of mounting surface 107a that are used to keep a plurality of small pieces substrate S with clathrate.In addition, embed fixing seal parts 121 and movable seal member 123 at cancellate concavo-convex recess.In addition, the surface of base material 107 is carried out alumina treatment.
On pedestal 105, also such as shown in Figure 4 and Figure 5, be provided with and set a plurality of fixing seal parts 121 (the second insulating properties parts) on the directions X in the drawings and be provided in a plurality of movable seal member 123 (the first insulating properties parts) on the Y direction with the directions X quadrature.Fixing seal parts 121 are imbedded in the base material 107 of pedestal 105 in the mode that its surface portion is exposed.The movable seal member 123 of long plate shape is set under keeping the parallel state of described mounting surface 107a can up-down deflection.Movable seal member 123 embeds among the recess 107b that is formed on the base material 107 on the position that descends, and can make above it to become one side and support small pieces substrate S with mounting surface 107a.In addition, movable seal member 123 is as long as can support small pieces substrate S above it, and how its shape has no relations.
In addition, as shown in Figure 6 and Figure 7, formation stage portion 121a on fixing seal parts 121.In addition, formation stage portion 123a below movable seal member 123.And, so that the concavo-convex mode that staggers engagement mutually of the following stage portion 123a of the concavo-convex and movable seal member 123 of the top stage portion 121a of fixing seal parts 121 makes two seal member cross-over configuration.Like this, fixing seal parts 121 and movable seal member 123 intersect and formation clathrate insulation division 125 mutually.The exposed portions serve on pedestal 105 surfaces of being divided by this clathrate insulation division 125 constitutes above-mentioned mounting surface 107a.Promptly, with a plurality of clathrate insulation division 125 encirclements that constituted by fixing seal parts 121 and movable seal member 123 on every side that are formed on lip-deep each mounting surface 107a of pedestal 105.
The clathrate insulation division 125 that is made of fixing seal parts 121 and movable seal member 123 has the focusing that improves plasma, the small pieces substrate S of mounting on mounting surface 107a is concentrated the function of plasma.In addition, clathrate insulation division 125 has the paradoxical discharge of the base material 107 that prevents to constitute pedestal 105 when plasma treatment.Particularly, in the present embodiment, the structure that disposes of the mode by the engagement so that the following stage portion 123a of the concavo-convex and movable seal member 123 of the top stage portion 121a of fixing seal parts 121 concavo-convex staggers is mutually guaranteed sealing function more fully.
In addition, each movable seal member 123 can support small pieces substrate S, simultaneously small pieces substrate S is carried out the synchronization lifting displacement.And, movable seal member 123 also can play as its with the fork 23 of carrying device 25 between carry out the function of structure member of the connecting mechanism portion 111 that joins in the lump of a plurality of small pieces substrate S.The detailed content of connecting mechanism portion 111 will be explained below.
With reference to Fig. 3, above said base 105 parallel with this pedestal 105 and with these pedestal 105 relative shower nozzles 131 that play the upper electrode function that are provided with.Shower nozzle 131 is supported on the top of container handling 101.Shower nozzle 131 constitutes hollow form, and portion is provided with gaseous diffusion space 133 within it.In addition, (opposite face of pedestal 105) forms a plurality of gas squit holes 135 that gas is handled in ejection below shower nozzle 131.This shower nozzle 131 is grounded, and constitutes the pair of parallel plate electrode with pedestal 105.
Near the center upper portion of shower nozzle 131, be provided with gas introduction port 137.Connection processing gas supply pipe 139 on this gas introduction port 137.On this processing gas supply pipe 139, be connected the gas supply source 145 that supply is used for etched processing gas with mass flow controller 143 via two valves 141,141.Can use for example halogen gas or oxygen as handling gas, also can use rare gas such as Ar gas in addition.
On the bottom of above-mentioned container handling 101, be formed with many places (diagram 2 places among Fig. 3) exhaust outlet 151.Connect blast pipe 153 on exhaust outlet 151, this blast pipe 153 is connected with exhaust apparatus 155.Exhaust apparatus 155 for example has turbomolecular pump equal vacuum pump, can will be evacuated to the reduced atmosphere of regulation in the container handling 101 thus.
In addition, being provided with not shown substrate on the sidewall of container handling 101 moves into and takes out of mouth.This substrate is moved into and is taken out of mouth by gate valve 7a switching (seeing figures.1.and.2).And, between the carrying room 3 that small pieces substrate S under the state of opening this gate valve 7a is being adjacent by conveyance (seeing figures.1.and.2).
On the base material 107 of pedestal 105, connect supply lines 171, connect high frequency electric source 175 via matching box (M.B.) 173 on this supply lines 171.Thus, supply with for example High frequency power of 13.56MHz from 175 pairs of pedestals 105 of high frequency electric source as lower electrode.
Then, describe connecting mechanism portion 111 in detail.Connecting mechanism portion 111, also as shown in Figure 4, have a plurality of movable seal members 123, make at a plurality of bars 187 of each movable seal member 123 of two end supports, when the both sides of pedestal 105 connect the link 189, support and connection parts 189 of these bars 187 its up and down displacement driving shaft 191 and drive the drive division 193 of driving shaft 191 up and down.
The diapire 101a that connects container handlings 101 from the driving shaft 191 of lower support link 189 is provided with, and is connected with the drive division 193 of the outside, the end that is provided in container handling 101.By not shown sealing mechanisms such as bellows sealing, guarantee the air-tightness in the container handling 101 around the driving shaft 191 of the diapire 101a of perforation container handling 101.
The material of bar 187, link 189 is preferably equally for example used insulating material such as pottery or quartz with movable seal member 123.
In the present embodiment, connecting mechanism portion 111 form by about each 5 bar 187 5 movable seal members 123 are connected on the link 189, by about each two driving shaft 191 make the structure of link 189 up-down deflections.But, the changes that suit such as number of the small pieces substrate S that the radical of movable seal member 123, bar 187, driving shaft 191 can corresponding join.In addition, also can form two end supports structure by the movable seal member 123 of pedestal 105 two end supports, and only by the one-sided unilateral component support structure that supports.In addition, connecting mechanism portion 111 so long as can keep support a plurality of small pieces substrate S movable seal member 123 level and the mechanism of its up-down deflection is got final product, be not limited to above-mentioned structure.
The handing-over of the small pieces substrate S of the connecting mechanism portion 111 with above structure then, is described with reference to Fig. 9～Figure 12.At first, as shown in Figure 9, mounting is had in any of fork 23 insertion process chamber 1a～1c of carrying device 25 of a plurality of small pieces substrate S, it is advanced into the top position of pedestal 105.The movable seal member 123 of connecting mechanism portion 111 makes the handing-over in the lump of carrying out small pieces substrate S between the fork 23 of position at itself and carrying device 25 after these many small pieces substrate S rise while supporting many small pieces substrate S.In addition, on one side movable seal member 123 support position after many small pieces substrate S make these many small pieces substrate S declines with each small pieces substrate S mounting in each mounting surface 107a.Then, as shown in figure 10, make the fork 23 of a plurality of small pieces substrate of mounting S stop at the specified altitude position of the top of pedestal 105.This stop position A be set at each the support component 26b that makes fork 23 be positioned at adjacent movable seal member 123 the slit directly over.
Then, make the movable seal member 123 of connecting mechanism portion 111 rise to the height (position B) of regulation.That is,, link 189 is risen, keep the level of movable seal member 123 and make its rising via driving shaft 191 by driving drive division 193.The position B of the movable seal member 123 after the rising sets than the stop position A height of fork 23.Movable seal member 123 is not interfered with fork 23 and is not risen to the position B higher than fork 23.Rise in the way thereon, the small pieces substrate S of mounting on fork 23 is handed off to movable seal member 123 in the lump with the state that is supported at its both ends on the adjacent movable seal member 123 as shown in figure 11.Behind the handing-over small pieces substrate S, fork 23 is kept out of the way.
Then, the movable seal member 123 of connecting mechanism portion 111 is descended.Promptly, by drive division 193 being driven and link 189 being descended via driving shaft 191, keep level and movable seal member 123 descended.In the present embodiment, on the movable seal member 123 of down position with above the pedestal 105, become simultaneously.Thus, as shown in figure 12, small pieces substrate S in the lump mounting on pedestal 105.
Small pieces substrate S can be to implement with above-mentioned opposite order to the handing-over of the fork 23 of carrying device 25 from pedestal 105.
In above action, by determining in advance the position of the small pieces substrate S on the fork 23, thereby can be handed off to behind the pedestal 105 each small pieces substrate S accurately and the mounting surface 107a contraposition of pedestal 105 and mounting on it.In order to carry out this contraposition reliably, in the present embodiment, also can be for example shown in Figure 13, above the support component 26b step difference is set in each of fork 23, form mounting portion 300 to the location usefulness of small pieces substrate S location.Have the fork 23 of such mounting portion 300 by employing, small pieces substrate S can joined in position accurately during to movable seal member 123 handing-over.In addition, also can prevent to be accompanied by the dislocation of the small pieces substrate S in the conveyance way of fork 23 of acceleration-deceleration by mounting portion 300.
In addition, as Figure 14 and shown in Figure 15, also preferably on the edge of movable seal member 123, form in advance as to the location of the stage portion of small pieces substrate S location with notch 301.Like this, locate with notch 301, thereby carry out the contraposition of each small pieces substrate S on movable seal member 123 easily by on movable seal member 123, being provided with.Therefore, when movable seal member 123 is descended, can be accurately and each mounting surface 107a contraposition of pedestal 105 and mounting on it with each small pieces substrate S.Thus, for example can guarantee to carry out machining accuracy under the situation that etching etc. handles.In addition, by location notch 301 is set, thereby with small pieces substrate S mounting under the state on the pedestal, the top of the top of small pieces substrate S and movable seal member 123 become simultaneously, so can improve the focusing of plasma with respect to small pieces substrate S.
In the present embodiment, small pieces substrate S is not limited to said sequence from the fork 23 of carrying device 25 to the method for handing-over in the lump of pedestal 105.For example also can constitute freely under the situation of fork 23, under the state that movable seal member 123 is risen, fork 23 be descended, thereby carry out the handing-over in the lump of small pieces substrate S to movable seal member 123 from fork 23 in lifting.In this case, can in advance movable seal member 123 be arranged on the lifting position, have the fork 23 of small pieces substrate S to move on the pedestal 105 mounting under this state.
Then, illustrate as the processing action of the plasma-etching apparatus 200 of above formation.At first, under the state of opening gate valve 7a, take out of to move into via not shown substrate from carrying room 3 by the fork 23 of carrying device 25 as many small pieces substrate S of handled object and mouthful move in the container handling 101.Small pieces substrate S in the lump with many for example the state on 20 forks 23 that are supported on carrying device 25 by conveyance.And,, carry out the handing-over in the lump of small pieces substrate S to pedestal 105 from fork 23 via the movable seal member 123 of connecting mechanism portion 111 according to said sequence.Many small pieces substrate S be formed on each mounting surface 107a on the pedestal 105 and go up contraposition and mounting on it.Afterwards, closing gate valve 7a will be evacuated to the specified vacuum degree by exhaust apparatus 155 in the container handling 101.
Then, open valve 141, import to the gaseous diffusion space 133 of shower nozzle 131 via processing gas supply pipe 139, gas introduction port 137 from gas supply source 145 handling gas.At this moment, handle the flow control of gas by mass flow controller 143.The processing gas that imports in the gaseous diffusion space 133 further evenly sprays via the small pieces substrate S of 135 pairs of mountings of a plurality of ejiction openings on pedestal 105, and the pressure in the container handling 101 is maintained at the value of regulation.
High frequency power is applied to pedestal 105 from high frequency electric source 175 via matching box 173 under this state.Thus, as producing high-frequency electric field between the pedestal 105 of lower electrode and the shower nozzle 131, handle gas and be ionized and plasmaization as upper electrode.Utilize this plasma, small pieces substrate S is implemented etch processes.The state that the clathrate insulation division 125 that each small pieces substrate S is made of fixing seal parts 121 and movable seal member 123 with quilt surrounds so clathrate insulation division 125 has improved the focusing of plasma, is obtained high treatment effeciency by plasma treatment.In addition, in high-frequency electric field, also can prevent the paradoxical discharge on pedestal 105 surfaces by clathrate insulation division 125.
After implementing etch processes, stop from the applying of the High frequency power of high frequency electric source 175, after stopping gas and importing, will be decompressed to authorized pressure in the container handling 101.Then, open gate valve 7a, small pieces substrate S is handed off to the fork 23 of carrying device 25 in the lump from the movable seal member 123 of connecting mechanism portion 111, take out of from the substrate of container handling 101 and move into mouthful (omitting diagram) and take out of to carrying room 3.By above operation, finish etch processes in the lump to small pieces substrate S.
The pedestal 105 of present embodiment has the connecting mechanism 111 that uses movable seal member 123, thereby receives a plurality of small pieces substrate S in the lump from the fork 23 of carrying device 25, and in the lump to fork 23 handing-over.Therefore, can solve the above-mentioned problems of the prior art of handing-over in the lump that the use pallet carries out small pieces substrate S.Particularly, owing to do not use pallet, can adopt the advantage (with reference to second execution mode of back) of carrying on the back the cold cold mechanism of the back of the body towards the back side of Electrostatic Absorption mechanism or small pieces substrate S so have.In addition, compare with the prior art of handing-over in the lump of using lifter pin to carry out small pieces substrate S, tabular movable seal member 123 can be with external simple mechanism oscilaltion displacement on pedestal 105, so the structural Case of connecting mechanism is simplified outward, can be joined more small pieces substrate S reliably in the lump.In addition, the connecting mechanism 111 that uses movable seal member 123 is because simple in structure, so can carry out the replacing of movable seal member 123 and the interval adjustment of adjacent movable seal member 123 etc. easily.Therefore, can be according to the size of small pieces substrate S or the number of handing-over, that freely sets movable seal member 123 is provided with number, width, interval etc.In addition, the replacing of movable seal member 123 or interval adjustment can comprise that also for example link 189 is changed bar 187 and movable seal member 123, installation radical and the installation site that perhaps also can change the bar 187 of link 189 in the lump.
In addition, the movable seal member 123 that is made of insulating material is on the position above the butt pedestal 105 on down position, form the clathrate insulation division 125 on every side that surrounds small pieces substrate S and play sealing function with fixing seal parts 121, so can prevent the top paradoxical discharge of pedestal 105 reliably.In addition, clathrate insulation division 125 plays the function that focuses on plasma towards mounting in its inboard small pieces substrate S.Like this, by making movable seal member 123 have substrate delivery/reception function and sealing function and plasma focus function, do one's utmost to avoid the complicated of apparatus structure thereby can access, handle the small pieces substrate S of pedestal 105 in the lump in a large number, can improve effects such as treatment effeciency by simple structure.
(second execution mode)
Then, with reference to Figure 16 and Figure 17 second execution mode of the present invention is described.Figure 16 is the accompanying drawing of summary cross section structure of the plasma-etching apparatus 201 of expression present embodiment.In the present embodiment, keep the back side of the Electrostatic Absorption mechanism of small pieces substrate S and each small pieces substrate S to import on the cold mechanism of the back of the body this point of heat-conducting gas of cooling usefulness being provided with on the pedestal 205 to absorption, different with first execution mode.In the following description, be that the center describes with the point different with first execution mode, the structure identical with first execution mode used identical symbol, and omits its explanation.
The plasma-etching apparatus 200 of the plasma-etching apparatus 201 and first execution mode similarly in vacuum flush system 100, can be suitable for (with reference to Fig. 1 or Fig. 2) as processing chamber 1a, 1b or 1c.
As shown in figure 16, in plasma-etching apparatus 201, also the pedestal 205 as lower electrode has as primary structure: lower substrate 207, be layered in upper substrate 209 on this lower substrate 207, be formed on the Electrostatic Absorption portion 211 on the upper substrate 209 and be used for small pieces substrate S is handed off to connecting mechanism portion 111 in the Electrostatic Absorption portion 211 (but only diagram rotary packing ring 123) in the lump.
In the present embodiment, adopt the structure that supply lines 223 branches are powered simultaneously from 225 pairs of each battery lead plates 221 of a DC power supply.In addition, also can be the structure of respectively each battery lead plate 221 being powered from each DC power supply.In addition also can be like this, battery lead plate 221 is the state configuration to separate respectively corresponding to mounting surface 219a not, but the structure that battery lead plate 221 disposes in the mode across a plurality of mounting surface 219a.
On lower substrate 207, upper substrate 209 and dielectric film 219, form and connect their gas inside supply road 227.Gas is supplied with road 227 and is had the borderline horizontal supply unit 227a of lower substrate of being formed on 207 and upper substrate 209 and a plurality of vertical supply hole 227b via this horizontal supply unit 227a difference.Vertical supply hole 227b forms many places (only illustrating a place among Figure 16 and Figure 17) on a mounting surface 219a.Supply with road 227 via this gas and for example heat-conducting gases such as He gas are supplied to the back side as the small pieces substrate S of handled object.In addition, be provided with not shown refrigerant cycle road in the inside of lower substrate 207.By making for example refrigerant cycle such as fluorine class I liquid I in this refrigerant cycle road, make its cold and hot via above-mentioned heat-conducting gas to small pieces substrate S heat conduction.
Promptly, the heat-conducting gas that supplies to gas supply road 227 is supplied with road 227a temporarily after the horizontal direction diffusion via level, by vertically being formed on a plurality of vertical supply hole 227b in the Electrostatic Absorption portion 211, from the surface of Electrostatic Absorption portion 211 to the dorsal part ejection of each small pieces substrate S.Like this, cold and hot each small pieces substrate S that is delivered to of pedestal 205, each small pieces substrate S is maintained at the temperature of regulation.
In the present embodiment, owing to be provided with Electrostatic Absorption portion 211, so each small pieces substrate S stably can be remained on the mounting surface 219a of pedestal 205.In addition, the gas that is provided with the branch that supplies with heat-conducting gas respectively in the rear side that remains on each the small pieces substrate S in the Electrostatic Absorption portion 211 is supplied with road 227, so can carry out adjustment to small pieces substrate S, can improve the precision of processing such as for example etching.
The structure of the connecting mechanism portion 111 of present embodiment and effect are same with first execution mode.Therefore, in the present embodiment, also can join in the lump by the 111 pairs of small pieces substrates S of connecting mechanism portion with movable seal member 123.In this case, with first execution mode similarly, the location also can be set with notch 301 (with reference to Figure 14 and Figure 15) on the movable seal member 123 of connecting mechanism portion 111.In addition, while can prevent by the clathrate insulation division 125 that constitutes by fixing seal parts 121 and movable seal member 123 paradoxical discharge of Electrostatic Absorption portion 211 make plasma focus in mounting on the small pieces substrate S of mounting surface 219a.
In addition, in the present embodiment,, preferably between the small pieces substrate S of mounting surface 219a and mounting surface 219a, vacate the gap in mounting for heat-conducting gas is supplied with at the back side of small pieces substrate S.For this purpose, shown in for example Figure 17 amplifies, can under the state that movable seal member 123 is descended, form the top higher slightly of movable seal member 123 than mounting surface 219a.Thus, both ends are supported on small pieces substrate S on the movable seal member 123 becomes the state that floats slightly from mounting surface 219a and forms refrigerating gas with space 302.By cooling off small pieces substrate S with supply on the space 302 efficiently from the heat-conducting gas of vertical supply hole 227b to this refrigerating gas.In this case, though diagram is omitted, the top of fixing seal parts 121 also can form higherly than mounting surface 219a with the top consistent of movable seal member 123.Like this, around surrounding by clathrate insulation division 125, thereby can further improve the cooling effectiveness of refrigerating gas with the heat-conducting gas in space 302.
In addition, in the present embodiment, as shown in figure 17, be provided with from mounting surface 219a and connect a plurality of convex shaped part 219b that refrigerating gas is established for thirty years of age with space 302.The effect of supporting small pieces substrate S is played at the back side of the top butt small pieces substrate S of convex shaped part 219b.In addition, convex shaped part 219b also can be formed in the projection on the surface (mounting surface 219a) of dielectric film 219a, also can be the convex portion of the concaveconvex shape that constitutes of the groove on the surface (mounting surface 219a) that is engraved in dielectric film 219a.
Other structures, effect and the effect of present embodiment are identical with first execution mode.
More than, embodiments of the present invention have been described, but have the invention is not restricted to above-mentioned execution mode, can carry out all distortion.For example, in the above-described embodiment, with the capacitive coupling type parallel flat plasma-etching apparatus that lower electrode (base material 107, lower substrate 207 and upper substrate 209) applied the RIE type of High frequency power is that example is illustrated, but also can be type to upper electrode supply high frequency electric power, also can be not limited to the capacitive coupling type, be the inductance coupling high type.
In addition, the invention is not restricted to plasma-etching apparatus, also go for other plasma processing apparatus such as ashing, CVD film forming.
In addition, the mounting table of the present invention with connecting mechanism in the lump of a plurality of small pieces substrate S is not limited to vacuum treatment installation or plasma processing apparatus, for example also is applicable to annealing device etc.In addition, the mounting table with connecting mechanism in the lump of small pieces substrate S also can be provided in chamber beyond the processing chamber for example in the load locking room.
In addition, being not limited to FPD as the small pieces substrate S of handled object and making usefulness, can be object with the situation of various uses also.Small pieces substrate S also can be a semiconductor wafer.
Claims (11)
1. mounting table, it is the mounting handled object in processing unit, it is characterized in that, comprising:
A plurality of mounting surfaces, a plurality of handled objects of its mounting; With
Connecting mechanism, it has lifting a plurality of movable members freely, these a plurality of movable members are being spaced from each other under the state parallel with described mounting surface apart from arranging on equidirectional, by supporting handled object, between described movable member and carrying device, carry out the handing-over of a plurality of handled objects in the lump by described movable member.
2. mounting table as claimed in claim 1 is characterized in that:
Described movable member is while supporting the position of a plurality of handled objects after descending, with the handled object mounting in described mounting surface, while and between described movable member and described carrying device, carry out the handing-over of handled object supporting the position of a plurality of handled objects after rising.
3. mounting table as claimed in claim 1 or 2 is characterized in that:
Described movable member is made of the insulating properties material, surround described mounting surface around, constitute the first insulating properties parts of the part of the insulation division that described mounting surface is divided.
4. mounting surface as claimed in claim 3 is characterized in that:
Described insulation division has with the described first insulating properties unit construction and surrounds the second insulating properties parts on every side of described mounting surface.
5. mounting table as claimed in claim 4 is characterized in that:
By described first insulating properties parts of orthogonal configuration and the described second insulating properties parts, make described insulation division become clathrate.
6. mounting table as claimed in claim 5 is characterized in that:
The described first insulating properties parts are provided with the stage portion to the handled object location.
7. as each described mounting table in the claim 1～6, it is characterized in that:
Corresponding to described each mounting surface, be provided with the Electrostatic Absorption mechanism that absorption keeps handled object.
8. as each described mounting table in the claim 1～7, it is characterized in that:
On described mounting surface, be provided with the ejiction opening of the cooling at the cooling handled object back side with gas.
9. processing unit, it is handled together a plurality of handled objects, it is characterized in that, comprising:
Container handling; With
Be configured in the described container handling as each described mounting table in the claim 1～8.
10. processing unit as claimed in claim 9 is characterized in that:
It is the plasma processing apparatus by the plasma treatment handled object.
11. a treatment system, it comprises the processing unit of handling together a plurality of handled objects and has the carrying device of the support component of the broach shape that supports a plurality of handled objects simultaneously, it is characterized in that:
Described processing unit have container handling and in described container handling the mounting table of a plurality of handled objects of mounting,
Described mounting table has:
A plurality of mounting surfaces of mounting handled object; With
Connecting mechanism, it has lifting a plurality of movable members freely, these a plurality of movable members are being spaced from each other under the state parallel with described mounting surface apart from arranging on equidirectional, by supporting handled object, between the support component of described movable member and described broach shape, carry out the handing-over of a plurality of handled objects in the lump by described movable member.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007288083 | 2007-11-06 | ||
| JP2007288083A JP4850811B2 (en) | 2007-11-06 | 2007-11-06 | Mounting table, processing apparatus and processing system |
| JP2007-288083 | 2007-11-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101431041A true CN101431041A (en) | 2009-05-13 |
| CN101431041B CN101431041B (en) | 2011-04-13 |
Family
ID=40646330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101735851A Expired - Fee Related CN101431041B (en) | 2007-11-06 | 2008-11-06 | Carrying bench, processing device and processing system |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4850811B2 (en) |
| KR (1) | KR101088289B1 (en) |
| CN (1) | CN101431041B (en) |
| TW (1) | TWI446483B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163570A (en) * | 2010-02-15 | 2011-08-24 | 东京毅力科创株式会社 | Substrate processing device and vacuum intake device |
| CN103354216A (en) * | 2013-07-02 | 2013-10-16 | 中国电子科技集团公司第四十八研究所 | Atmosphere manipulator terminal holder transferring solar cell pieces in batch |
| CN104701216A (en) * | 2013-12-06 | 2015-06-10 | Psk有限公司 | Substrate processing device and substrate processing method |
| CN106206378A (en) * | 2012-07-25 | 2016-12-07 | 东京毅力科创株式会社 | Decompression dry device |
| CN106919001A (en) * | 2011-12-29 | 2017-07-04 | 株式会社尼康 | Transport method, exposure method, Bao Guang Installed put and manufacturing method |
| CN108630590A (en) * | 2017-03-23 | 2018-10-09 | 圆益Ips股份有限公司 | Substrate supporting frame and the substrate board treatment for being provided with this bearing support |
| CN108942205A (en) * | 2013-03-26 | 2018-12-07 | 株式会社尼康 | Processing unit and automatic processing method |
| CN111554596A (en) * | 2017-04-13 | 2020-08-18 | 三星显示有限公司 | Substrate processing system |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101062185B1 (en) | 2009-08-21 | 2011-09-05 | 김남진 | Plasma processing equipment |
| KR101638222B1 (en) * | 2010-12-15 | 2016-07-08 | 가부시키가이샤 니콘 | Substrate processing system and method for producing display elements |
| KR102192024B1 (en) * | 2015-01-22 | 2020-12-17 | 주식회사 원익아이피에스 | Substrate supporting module and substrate processing apparatus having the same |
| KR102324032B1 (en) * | 2015-10-27 | 2021-11-09 | 주식회사 원익아이피에스 | Substrate supporting module and substrate processing apparatus having the same |
| KR102102922B1 (en) * | 2015-12-04 | 2020-04-21 | 주식회사 원익아이피에스 | Substrate processing apparatus |
| KR102073799B1 (en) * | 2016-05-09 | 2020-02-05 | 가부시키가이샤 알박 | Electrostatic chuck and plasma processing unit |
| JP6476215B2 (en) * | 2017-01-12 | 2019-02-27 | 東京エレクトロン株式会社 | Vacuum drying apparatus, vacuum drying method and baking processing system |
| JP6881010B2 (en) | 2017-05-11 | 2021-06-02 | 東京エレクトロン株式会社 | Vacuum processing equipment |
| KR102117093B1 (en) * | 2018-11-07 | 2020-05-29 | 세메스 주식회사 | Apparatus for treating substrate |
| KR102116470B1 (en) * | 2019-09-05 | 2020-05-29 | 삼성디스플레이 주식회사 | Substrate processing system |
| JP2021096961A (en) * | 2019-12-17 | 2021-06-24 | 東京エレクトロン株式会社 | Vacuum dryer and vacuum drying method |
| JP6878557B2 (en) * | 2019-12-24 | 2021-05-26 | 東京エレクトロン株式会社 | Drying equipment and drying method |
| KR102367956B1 (en) * | 2020-04-03 | 2022-02-25 | 삼성디스플레이 주식회사 | Substrate processing system and control method of transferring substrate |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5486975A (en) * | 1994-01-31 | 1996-01-23 | Applied Materials, Inc. | Corrosion resistant electrostatic chuck |
| JPH09320948A (en) * | 1996-05-27 | 1997-12-12 | Nikon Corp | Substrate transfer method and aligner |
| JPH10335319A (en) | 1997-05-30 | 1998-12-18 | Toyo Commun Equip Co Ltd | Film forming apparatus |
| JP2000068355A (en) | 1998-08-21 | 2000-03-03 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
| KR100469359B1 (en) * | 2002-02-20 | 2005-02-02 | 엘지.필립스 엘시디 주식회사 | bonding device for liquid crystal display |
| JP2003289098A (en) * | 2002-03-28 | 2003-10-10 | Nikon Corp | Substrate treatment device, substrate holding device, exposure method, and aligner |
| JP2004083182A (en) * | 2002-08-26 | 2004-03-18 | Sharp Corp | Base board transporting device and manufacturing method for liquid crystal display device |
| JP3989384B2 (en) * | 2003-02-07 | 2007-10-10 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| JP4878109B2 (en) * | 2004-08-24 | 2012-02-15 | 株式会社アルバック | Substrate transfer system and substrate transfer method |
| JP4401285B2 (en) | 2004-12-24 | 2010-01-20 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| JP4680657B2 (en) * | 2005-04-08 | 2011-05-11 | 株式会社アルバック | Substrate transfer system |
| JP4908771B2 (en) * | 2005-04-27 | 2012-04-04 | 東京エレクトロン株式会社 | Processing device system |
| US7455735B2 (en) * | 2005-09-28 | 2008-11-25 | Nordson Corporation | Width adjustable substrate support for plasma processing |
-
2007
- 2007-11-06 JP JP2007288083A patent/JP4850811B2/en not_active Expired - Fee Related
-
2008
- 2008-11-05 TW TW097142673A patent/TWI446483B/en not_active IP Right Cessation
- 2008-11-05 KR KR1020080109315A patent/KR101088289B1/en active IP Right Grant
- 2008-11-06 CN CN2008101735851A patent/CN101431041B/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163570A (en) * | 2010-02-15 | 2011-08-24 | 东京毅力科创株式会社 | Substrate processing device and vacuum intake device |
| CN106919001A (en) * | 2011-12-29 | 2017-07-04 | 株式会社尼康 | Transport method, exposure method, Bao Guang Installed put and manufacturing method |
| CN106206378A (en) * | 2012-07-25 | 2016-12-07 | 东京毅力科创株式会社 | Decompression dry device |
| CN108942205A (en) * | 2013-03-26 | 2018-12-07 | 株式会社尼康 | Processing unit and automatic processing method |
| CN103354216A (en) * | 2013-07-02 | 2013-10-16 | 中国电子科技集团公司第四十八研究所 | Atmosphere manipulator terminal holder transferring solar cell pieces in batch |
| CN103354216B (en) * | 2013-07-02 | 2016-05-18 | 中国电子科技集团公司第四十八研究所 | A kind of batch is transmitted the atmosphere manipulator terminal clamper of solar battery sheet |
| CN104701216A (en) * | 2013-12-06 | 2015-06-10 | Psk有限公司 | Substrate processing device and substrate processing method |
| CN108630590A (en) * | 2017-03-23 | 2018-10-09 | 圆益Ips股份有限公司 | Substrate supporting frame and the substrate board treatment for being provided with this bearing support |
| CN108630590B (en) * | 2017-03-23 | 2022-05-17 | 圆益Ips股份有限公司 | Substrate support and substrate processing apparatus provided with the same |
| CN111554596A (en) * | 2017-04-13 | 2020-08-18 | 三星显示有限公司 | Substrate processing system |
| CN111564389A (en) * | 2017-04-13 | 2020-08-21 | 三星显示有限公司 | Substrate processing system |
| CN111564389B (en) * | 2017-04-13 | 2023-08-29 | 三星显示有限公司 | Substrate processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090046726A (en) | 2009-05-11 |
| JP2009117568A (en) | 2009-05-28 |
| CN101431041B (en) | 2011-04-13 |
| KR101088289B1 (en) | 2011-11-30 |
| TW200943469A (en) | 2009-10-16 |
| JP4850811B2 (en) | 2012-01-11 |
| TWI446483B (en) | 2014-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101431041B (en) | Carrying bench, processing device and processing system | |
| US7407358B2 (en) | Interback-type substrate processing device | |
| CN100591190C (en) | Plasma processing apparatus and method | |
| TWI650790B (en) | Plasma processing device | |
| US20070119393A1 (en) | Vacuum processing system | |
| CN101159228A (en) | Processing gas supplying mechanism, supplying method and gas processing unit | |
| JP2002203884A (en) | Apparatus for processing substrate and transfer chamber | |
| JP2009260252A (en) | Substrate treatment device, its method, and substrate transport device | |
| KR102019552B1 (en) | Substrate processing system, method of manufacturing semiconductor device and recording medium | |
| CN104241087A (en) | Substrate processing method and substrate processing device | |
| KR101116875B1 (en) | Vacuum processing apparatus | |
| CN101562124B (en) | Apparatus for processing substrate and method for processing substrate | |
| JPH10107124A (en) | Substrate processing device | |
| CN101267708B (en) | Plasma processing device and method | |
| CN102190156B (en) | Tray-type substrate conveying system, film formation method and manufacturing method of electronic device | |
| KR20140049921A (en) | Film forming apparatus | |
| KR20100105456A (en) | Substrate heat processing apparatus | |
| TW201910545A (en) | Apparatus for processing a substrate, processing system for processing a substrate and method for servicing an apparatus for processing a substrate | |
| CN108878245B (en) | Gate valve device and substrate processing system | |
| KR102700368B1 (en) | Film forming apparatus, film forming method and method of manufacturing electronic device | |
| KR100920420B1 (en) | Apparatus for manufacturing flat panel display | |
| JPH1050802A (en) | Substrate processor | |
| KR100905394B1 (en) | Apparatus for manufacturing flat panel display | |
| KR100934765B1 (en) | Apparatus for manufacturing flat panel display | |
| KR100940303B1 (en) | Apparatus for manufacturing flat panel display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110413 Termination date: 20201106 |