TW201910545A - Apparatus for processing a substrate, processing system for processing a substrate and method for servicing an apparatus for processing a substrate - Google Patents

Apparatus for processing a substrate, processing system for processing a substrate and method for servicing an apparatus for processing a substrate Download PDF

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TW201910545A
TW201910545A TW107113653A TW107113653A TW201910545A TW 201910545 A TW201910545 A TW 201910545A TW 107113653 A TW107113653 A TW 107113653A TW 107113653 A TW107113653 A TW 107113653A TW 201910545 A TW201910545 A TW 201910545A
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vacuum
processing device
vacuum processing
substrate
chamber
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約翰 懷特
林恩 坎
雷波 林登博克
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美商應用材料股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • C23C16/545Apparatus specially adapted for continuous coating for coating elongated substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An apparatus (100) for processing a substrate is described. The apparatus includes a first vacuum processing arrangement (101), a second vacuum processing arrangement (102), and a support structure (103) arranged in an atmospheric space (108) between the first vacuum processing arrangement (101) and the second vacuum processing arrangement (102).

Description

用於處理基板的設備、用於處理基板的處理系統、以及用於保養用在處理基板的設備的方法Apparatus for processing a substrate, a processing system for processing a substrate, and a method for maintaining a device for processing a substrate

本揭露的實施例有關用於處理基板的設備、用於處理基板的處理系統、和用於保養設備的方法。本揭露的實施例特別是有關用於處理二或更多個基板的真空處理設備,例如用於顯示器製造,有關配置成用於基板的真空處理以製造顯示器裝置的處理系統,和有關用於從提供在二個真空處理裝置(processing arrangement)之間的大氣空間保養真空處理設備的方法。Embodiments of the present disclosure relate to an apparatus for processing a substrate, a processing system for processing a substrate, and a method for servicing the apparatus. Embodiments of the present disclosure are particularly directed to vacuum processing apparatus for processing two or more substrates, such as for display manufacturing, with respect to processing systems configured for vacuum processing of substrates to fabricate display devices, and A method of maintaining a vacuum processing apparatus in an atmospheric space between two vacuum processing arrangements is provided.

用於基板上之層沉積的技術,例如包含濺射沉積、熱蒸鍍、和化學氣相沉積。濺射沉積製程能用於在基板上沉積材料層,例如導電材料或絕緣材料的層。在濺射沉積製程期間,具有待沉積在基板上之靶材料的靶受到在電漿區中產生的離子轟擊,以從靶的表面逐出原子。被逐出的原子能在基板上形成材料層。在反應性濺射沉積製程中,被逐出的原子能和電漿區中的氣體如氮或氧反應,以在基板上形成靶材料的氧化物、氮化物、或氮氧化物。Techniques for layer deposition on a substrate, for example, include sputter deposition, thermal evaporation, and chemical vapor deposition. The sputter deposition process can be used to deposit a layer of material, such as a layer of electrically conductive material or insulating material, on a substrate. During the sputter deposition process, a target having a target material to be deposited on a substrate is bombarded with ions generated in the plasma region to eject atoms from the surface of the target. The ejected atoms are capable of forming a layer of material on the substrate. In a reactive sputter deposition process, the ejected atomic energy reacts with a gas in the plasma zone, such as nitrogen or oxygen, to form an oxide, nitride, or oxynitride of the target material on the substrate.

經塗佈的材料可用在數種應用和數種技術領域中。舉例來說,一種應用是在微電子學的領域,例如產生半導體裝置。又,用於顯示器的基板經常藉由濺射沉積製程來塗佈。另外的應用包含絕緣板、帶有薄膜電晶體(TFT)的基板、彩色濾光片、或類似者。The coated materials can be used in several applications and in several technical fields. For example, one application is in the field of microelectronics, such as the production of semiconductor devices. Also, the substrate for the display is often coated by a sputter deposition process. Additional applications include insulating plates, substrates with thin film transistors (TFTs), color filters, or the like.

舉例來說,在顯示器製造中,降低顯示器的製造成本是有利的,所述顯示器例如用於手機、平板電腦、電視螢幕、和類似者。製造成本的降低,能例如藉由增加真空處理系統如濺射沉積系統的產量來達成。另外,佔地能是降低持有真空處理系統的成本的相關因素。For example, in display manufacturing, it is advantageous to reduce the manufacturing cost of the display, such as for mobile phones, tablets, television screens, and the like. The reduction in manufacturing cost can be achieved, for example, by increasing the throughput of a vacuum processing system such as a sputter deposition system. In addition, land occupation can be a relevant factor in reducing the cost of holding a vacuum processing system.

考慮到上述情況,克服至少一些技術領域中的問題的設備、系統、和方法是有利的。本揭露特別是致力於提出提供用於增加產量、降低真空處理系統之佔地、以及降低操作、維護、和製造成本之中的至少一者的設備、系統、和方法。In view of the above, devices, systems, and methods that overcome at least some of the problems in the technical field are advantageous. The present disclosure is particularly directed to providing devices, systems, and methods for providing at least one of increased throughput, reduced footprint of a vacuum processing system, and reduced operating, maintenance, and manufacturing costs.

鑑於上述情況,提供用於處理基板的設備、用於處理基板的處理系統、和用於保養設備的方法。本揭露另外的方面、優點、和特徵,係藉由請求項、說明書、和所附圖式而明朗。In view of the above, an apparatus for processing a substrate, a processing system for processing the substrate, and a method for servicing the apparatus are provided. Additional aspects, advantages, and features of the disclosure are apparent from the claims, the description, and the drawings.

根據本揭露的一個方面,提供一種用於處理基板的設備。該設備包含一第一真空處理裝置、一第二真空處理裝置、和一支撐結構。支撐結構係配置在第一真空處理裝置和第二真空處理裝置之間的一大氣空間中。According to one aspect of the present disclosure, an apparatus for processing a substrate is provided. The apparatus includes a first vacuum processing device, a second vacuum processing device, and a support structure. The support structure is disposed in an atmospheric space between the first vacuum processing device and the second vacuum processing device.

根據本揭露的另一個方面,提供一種用於處理基板的設備。該設備包含一第一真空處理裝置、一第二真空處理裝置、和一支撐結構。支撐結構係配置在第一真空處理裝置和第二真空處理裝置之間的一大氣空間中。另外,支撐結構包含一基座架結構,該基座架結構支撐第一真空處理裝置之一第一真空腔室的一第一底壁。此外,支撐結構的基座架結構支撐第二真空處理裝置之一第二真空腔室的一第二底壁。另外,支撐結構包含一強化架結構,該強化架結構連接至第一真空腔室的一第一背壁,並連接至第二真空腔室的一第二背壁。第一真空腔室係相對於第二真空腔室配置。According to another aspect of the present disclosure, an apparatus for processing a substrate is provided. The apparatus includes a first vacuum processing device, a second vacuum processing device, and a support structure. The support structure is disposed in an atmospheric space between the first vacuum processing device and the second vacuum processing device. Additionally, the support structure includes a pedestal frame structure that supports a first bottom wall of the first vacuum chamber of one of the first vacuum processing devices. Additionally, the base frame structure of the support structure supports a second bottom wall of the second vacuum chamber of one of the second vacuum processing devices. Additionally, the support structure includes a stiffener structure coupled to a first back wall of the first vacuum chamber and to a second back wall of the second vacuum chamber. The first vacuum chamber is configured relative to the second vacuum chamber.

根據本揭露的又另一個方面,提供一種用於處理基板的處理系統。該處理系統包含根據任何敘述於此之實施例的用於處理基板的一設備。另外,該處理系統包含一基板裝載模組,該基板裝載模組用於將基板裝載至用於處理基板的該設備中。基板裝載模組包含一固持裝置和一擺動模組,固持裝置用於固持基板,擺動模組用於在一水平方向和一垂直方向之間改變基板方向。In accordance with yet another aspect of the present disclosure, a processing system for processing a substrate is provided. The processing system includes an apparatus for processing a substrate in accordance with any of the embodiments described herein. Additionally, the processing system includes a substrate loading module for loading the substrate into the device for processing the substrate. The substrate loading module comprises a holding device for holding the substrate, and a swinging module for changing the direction of the substrate between a horizontal direction and a vertical direction.

根據本揭露的再一個方面,提供一種用於保養用在處理基板的一設備的方法,該設備包含一第一真空處理裝置和一第二真空處理裝置,其由共享的一支撐結構所支撐。該方法從提供在支撐結構的一基座架結構上方的一大氣空間,保養第一真空處理裝置和/或第二真空處理裝置之中的至少一者。In accordance with still another aspect of the present disclosure, a method for servicing an apparatus for processing a substrate is provided, the apparatus comprising a first vacuum processing apparatus and a second vacuum processing apparatus supported by a shared support structure. The method maintains at least one of the first vacuum processing device and/or the second vacuum processing device from an atmospheric space provided above a pedestal structure of the support structure.

實施例也針對用於進行所揭露之方法的設備,並包含用於執行各個所述方法方面的設備部分。這些方法方面可以藉由硬體元件、以適當軟體編程的電腦、藉由二者的任意組合、或以任何其他方式來執行。再者,根據本揭露的實施例也針對用於操作所述設備的方法。用於操作所述設備的方法包含用於進行設備的每個功能的方法方面。Embodiments are also directed to apparatus for performing the disclosed methods, and include apparatus portions for performing various aspects of the methods. These method aspects can be performed by hardware components, computers programmed with appropriate software, by any combination of the two, or in any other manner. Furthermore, embodiments in accordance with the present disclosure are also directed to methods for operating the device. A method for operating the device includes method aspects for performing each function of the device.

現在將對於本揭露各種不同的實施例進行詳細說明,其一或更多個示例係於圖式中闡明。在以下對於圖式的敘述中,相同的元件符號指示相同的元件。只對於個別實施例的不同之處進行敘述。各個示例係以解釋本揭露的方式來提供,而非意味作為本揭露的限制。另外,作為一實施例的一部分而被闡明或敘述的特徵,能被用在或結合任一其他實施例,以產生又另一實施例。敘述內容意欲包含這類修改和變化。Various embodiments of the present disclosure will now be described in detail, one or more examples of which are illustrated in the drawings. In the following description of the drawings, the same element symbols indicate the same elements. Only the differences of the individual embodiments will be described. The examples are provided by way of explanation of the disclosure, and are not intended to be limiting. In addition, features illustrated or described as part of one embodiment can be used or combined with any other embodiment to produce yet another embodiment. The description is intended to cover such modifications and variations.

在詳細敘述本揭露各種不同的實施例之前,先解釋關於使用於此之一些用詞和表達的一些方面。Before describing various embodiments in detail, some aspects of the terms and expressions used herein are explained.

在本揭露中,「用於處理基板的設備」,能被理解成如敘述於此的配置成用於處理基板的設備。特別是,用於處理基板的設備能配置成用於處理垂直基板,例如用於顯示器製造。更特別地,用於處理基板的設備能配置成用於處理大面積基板,例如藉由在真空沉積腔室中於基板上沉積一或更多個層。另外,應該注意的是在本揭露中,「用於處理基板的設備」也可被稱為「處理設備」。In the present disclosure, "a device for processing a substrate" can be understood as an apparatus configured to process a substrate as described herein. In particular, the apparatus for processing a substrate can be configured for processing a vertical substrate, such as for display manufacturing. More particularly, the apparatus for processing a substrate can be configured to process a large area substrate, such as by depositing one or more layers on the substrate in a vacuum deposition chamber. In addition, it should be noted that in the present disclosure, the "device for processing a substrate" may also be referred to as a "processing device."

在本揭露中,如使用於此的用詞「基板」或「大面積基板」,應特別囊括非可撓性基板,例如玻璃板和金屬板。然而,本揭露不受限於此,用詞「基板」也能囊括可撓性基板,例如卷材或箔。根據一些實施例,基板能由任何適合用於材料沉積之材料製成。舉例來說,基板能由選自於由下列選項構成的群組的材料製成:玻璃(例如鈉鈣玻璃、硼矽玻璃等等)、金屬、聚合物、陶瓷、化合物材料、碳纖維材料、雲母、或任何其他能藉由沉積製程塗佈的材料或材料的組合。In the present disclosure, the term "substrate" or "large-area substrate" as used herein shall specifically include non-flexible substrates such as glass plates and metal plates. However, the present disclosure is not limited thereto, and the term "substrate" can also encompass a flexible substrate such as a coil or foil. According to some embodiments, the substrate can be made of any material suitable for deposition of materials. For example, the substrate can be made of a material selected from the group consisting of glass (eg, soda lime glass, borosilicate glass, etc.), metals, polymers, ceramics, compound materials, carbon fiber materials, mica. Or any other combination of materials or materials that can be coated by a deposition process.

舉例來說,如敘述於此的「大面積基板」,能具有至少0.01平方公尺的尺寸,特別是至少0.1平方公尺,更特別是至少0.5平方公尺。舉例來說,大面積基板或載具能為對應至約0.67平方公尺之基板(0.73公尺×0.92公尺)的第4.5代、對應至約1.4平方公尺之基板(1.1公尺×1.3公尺)的第5代、對應至約4.29平方公尺之基板(1.95公尺×2.2公尺)的第7.5代、對應至約5.7平方公尺之基板(2.2公尺×2.5公尺)的第8.5代、或甚至對應至約8.7平方公尺之基板(2.85公尺×3.05公尺)的第10代。更大的世代如第11代和第12代以及對應的基板面積,能以類似的方式實施。因此,基板能選自於由下列選項構成的群組:第1代、第2代、第3代、第3.5代、第4代、第4.5代、第5代、第6代、第7代、第7.5代、第8代、第8.5代、第10代、第11代、和第12代。特別是,基板能選自於由下列選項構成的群組:第4.5代、第5代、第7.5代、、第8.5代、第10代、第11代、和第12代、或更大的世代的基板。另外,基板厚度能從0.1至1.8公厘(mm),特別是約0.9公厘或更低,例如0.7公厘或0.5公厘。For example, a "large area substrate" as described herein can have a size of at least 0.01 square meters, particularly at least 0.1 square meters, and more particularly at least 0.5 square meters. For example, a large-area substrate or carrier can be a 4.5th generation corresponding to a substrate of about 0.67 square meters (0.73 meters x 0.92 meters), corresponding to a substrate of about 1.4 square meters (1.1 meters x 1.3 The fifth generation of the meter, the 7.5th generation corresponding to the substrate of about 4.29 square meters (1.95 meters x 2.2 meters), and the substrate corresponding to about 5.7 square meters (2.2 meters x 2.5 meters) The 10th generation of the 8.5th generation, or even the substrate (2.85 meters x 3.05 meters) corresponding to approximately 8.7 square meters. Larger generations such as the 11th and 12th generations and corresponding substrate areas can be implemented in a similar manner. Therefore, the substrate can be selected from the group consisting of: first generation, second generation, third generation, 3.5th generation, fourth generation, 4.5th generation, fifth generation, sixth generation, seventh generation , 7.5th, 8th, 8.5th, 10th, 11th, and 12th generations. In particular, the substrate can be selected from the group consisting of: 4.5th generation, 5th generation, 7.5th generation, 8.5th generation, 10th generation, 11th generation, and 12th generation, or larger Generation of substrates. Additionally, the substrate thickness can range from 0.1 to 1.8 mm, particularly about 0.9 mm or less, such as 0.7 mm or 0.5 mm.

在本揭露中,「真空處理裝置」,能被理解成具有一或更多個真空腔室的處理裝置。「真空腔室」,能被理解成具有用於產生工業級真空(technical vacuum)之真空泵的腔室。特別是,如敘述於此的真空腔室,能被理解成能夠被抽空至低於大氣壓力的腔室,例如是到10毫巴(mbar)或更低的壓力,特別是1毫巴或更低。根據一示例性的配置型態,真空腔室能為配置成用於在真空處理腔室中之沉積區導入製程氣體的真空處理腔室。舉例來說,製程氣體能包含惰性氣體如氬、和/或反應性氣體如氧、氮、氫和氨(NH3)、臭氧(O3)、或類似者。In the present disclosure, a "vacuum processing device" can be understood as a processing device having one or more vacuum chambers. A "vacuum chamber" can be understood as a chamber having a vacuum pump for producing industrial vacuum. In particular, a vacuum chamber as described herein can be understood as a chamber that can be evacuated to below atmospheric pressure, for example to a pressure of 10 mbar or less, in particular 1 mbar or more. low. According to an exemplary configuration, the vacuum chamber can be a vacuum processing chamber configured to introduce process gases in a deposition zone in the vacuum processing chamber. For example, the process gas can comprise an inert gas such as argon, and/or a reactive gas such as oxygen, nitrogen, hydrogen and ammonia (NH3), ozone (O3), or the like.

因此,如使用於此的用詞「真空」,能被理解成具有低於例如10毫巴之真空壓力的工業級真空的概念。典型地,如敘述於此之真空腔室中的壓力,可介於10-5 毫巴和約10-8 毫巴之間,典型地介於10-5 毫巴和10-7 毫巴之間,甚至更典型地介於約10-6 毫巴和約10-7 毫巴之間。根據一些實施例,真空腔室中的壓力可被視為在真空腔室中蒸發的材料的局部壓力,或者是總壓力(在真空腔室中只有該蒸發的材料存在作為待沉積成分時,其可約略相同)。在一些實施例中,真空腔室中的總壓力可落在從約10-4 毫巴至約10-7 毫巴的範圍裡,特別是在其中除了該蒸發的材料之外的第二成分存在於真空腔室中(例如氣體或類似者)的例子裡。Thus, the term "vacuum" as used herein, can be understood to mean the concept of an industrial grade vacuum having a vacuum pressure below, for example, 10 mbar. Typically, the pressure in the vacuum chamber as described herein may be between 10 -5 mbar and about 10 -8 mbar, typically between 10 -5 mbar and 10 -7 mbar. Even more typically between about 10 -6 mbar and about 10 -7 mbar. According to some embodiments, the pressure in the vacuum chamber can be considered as the partial pressure of the material evaporating in the vacuum chamber, or the total pressure (only in the vacuum chamber where the evaporated material is present as a component to be deposited, Can be about the same). In some embodiments, the total pressure in the vacuum chamber may fall in a range from about 10 -4 mbar to about 10 -7 mbar, particularly in which a second component other than the evaporated material is present. In the case of a vacuum chamber (such as a gas or the like).

在本揭露中,「支撐結構」,能被理解成如敘述於此之支撐第一真空處理裝置和第二真空處理裝置的機械結構。也就是說,支撐結構能為配置成用於支撐第一真空處理裝置和第二真空處理裝置之共享的一支撐結構。更特別地,如敘述於此的「支撐結構」,能為包含提供在第一真空處理裝置和第二真空處理裝置之間的共享的強化結構的機械結構,例如架結構(frame structure)。特別是,支撐結構能連接至第一真空處理裝置的一第一背壁,並連接至第二真空處理裝置的一第二背壁,如此而提供共享的強化。另外,如敘述於此的「支撐結構」,可包含提供平台結構的基座架結構,在平台結構的頂部上能配置第一真空處理裝置和第二真空處理裝置。因此,基座架結構能為共享的基座架結構,其支撐第一真空處理裝置和第二真空處理裝置二者。In the present disclosure, "support structure" can be understood as a mechanical structure supporting the first vacuum processing device and the second vacuum processing device as described herein. That is, the support structure can be a support structure configured to support the sharing of the first vacuum processing device and the second vacuum processing device. More specifically, the "support structure" as described herein can be a mechanical structure including a shared reinforcing structure provided between the first vacuum processing device and the second vacuum processing device, such as a frame structure. In particular, the support structure can be coupled to a first back wall of the first vacuum processing apparatus and to a second back wall of the second vacuum processing apparatus, thus providing a shared reinforcement. Further, the "support structure" as described herein may include a base frame structure that provides a platform structure on which a first vacuum processing device and a second vacuum processing device can be disposed. Thus, the base frame structure can be a shared base frame structure that supports both the first vacuum processing device and the second vacuum processing device.

在本揭露中,「大氣空間」,能被理解成提供在第一真空處理裝置和第二真空處理裝置之間的空間,其中提供大氣壓力。典型地,「大氣空間」包含空氣,使得人可停留在提供瑜第一真空處理裝置和第二真空處理裝置之間的空間中,例如為了第一真空處理裝置和/或第二真空處理裝置的保養或維護。因此,能選擇大氣空間的大小,使得人能進出第一真空處理裝置的一背側和第二真空處理裝置的一背側。In the present disclosure, "atmospheric space" can be understood to provide a space between a first vacuum processing device and a second vacuum processing device in which atmospheric pressure is provided. Typically, the "atmospheric space" contains air such that a person can stay in the space between the first vacuum processing device and the second vacuum processing device, for example for the first vacuum processing device and/or the second vacuum processing device. Maintenance or maintenance. Therefore, the size of the atmospheric space can be selected such that a person can enter and exit a back side of the first vacuum processing apparatus and a back side of the second vacuum processing apparatus.

第1圖示出根據敘述於此之實施例的用於處理基板的一設備100的側視示意圖。如在第1圖中示例性示出的,設備100包含一第一真空處理裝置101、一第二真空處理裝置102、和一支撐結構103。支撐結構係配置在第一真空處理裝置101和第二真空處理裝置102之間的一大氣空間108中。特別是,包含一第一真空處理裝置和一第二真空處理裝置的處理設備,在此也可被稱為成對處理設備(twin processing apparatus)。更特別地,「成對處理設備」,能被理解成如敘述於此的包含二個個別的真空處理裝置的處理設備。也就是說,第一真空處理裝置和第二真空處理裝置典型地被設計成分開的單元。Figure 1 shows a schematic side view of an apparatus 100 for processing a substrate in accordance with an embodiment described herein. As exemplarily shown in FIG. 1, the apparatus 100 includes a first vacuum processing apparatus 101, a second vacuum processing apparatus 102, and a support structure 103. The support structure is disposed in an atmospheric space 108 between the first vacuum processing device 101 and the second vacuum processing device 102. In particular, a processing apparatus comprising a first vacuum processing apparatus and a second vacuum processing apparatus may also be referred to herein as a twin processing apparatus. More specifically, a "paired processing device" can be understood as a processing device comprising two separate vacuum processing devices as described herein. That is, the first vacuum processing device and the second vacuum processing device are typically designed as separate units.

因此,相較於傳統處理設備,如敘述於此的處理設備的實施例有利地提供用於增加產量、降低佔地、以及降低操作、維護、和製造成本。特別是,藉由提供如敘述於此的成對處理設備,能增加產量且能降低佔地。另外,藉由提供如敘述於此的支撐結構,第一真空處理裝置和第二真空處理裝置的背壁能有利地被以高效且節省空間的方式強化。Thus, embodiments of the processing apparatus as described herein are advantageously provided for increased throughput, reduced footprint, and reduced operational, maintenance, and manufacturing costs as compared to conventional processing equipment. In particular, by providing a paired processing apparatus as described herein, the throughput can be increased and the footprint can be reduced. In addition, by providing a support structure as described herein, the back walls of the first vacuum processing device and the second vacuum processing device can advantageously be reinforced in an efficient and space-saving manner.

更特別地,提供如敘述於此的支撐結構可能是特別有利的,因為各個真空處理裝置的背壁必須承受大氣壓力至真空壓力的差異。由於如敘述於此的支撐結構提供用於第一真空處理裝置和第二真空處理裝置之共享的強化,支撐結構具有關於構成、固定、和成本方面的優點。特別是,相較於真空處理裝置之個別的強化,共享的強化降低了重量。More particularly, it may be particularly advantageous to provide a support structure as described herein, as the back wall of each vacuum processing device must withstand the difference in atmospheric pressure to vacuum pressure. Since the support structure as described herein provides for enhanced reinforcement of the first vacuum processing device and the second vacuum processing device, the support structure has advantages in terms of composition, fixation, and cost. In particular, the shared reinforcement reduces the weight compared to the individual reinforcement of the vacuum processing unit.

另外,有利地,提供在第一真空處理裝置和第二真空處理裝置之間的空間,亦即真空處理裝置的背壁之間的路程,提供用於用在保養真空處理裝置的保養區。因此,如敘述於此的處理設備的實施例有利地提供用於從提供在支撐結構的一基座架結構上方的大氣空間,保養第一真空處理裝置和/或第二真空處理裝置。Additionally, advantageously, a space between the first vacuum processing device and the second vacuum processing device, that is, the path between the back walls of the vacuum processing device, is provided for providing a service area for servicing the vacuum processing device. Accordingly, embodiments of the processing apparatus as described herein are advantageously provided for servicing a first vacuum processing apparatus and/or a second vacuum processing apparatus from an atmospheric space provided above a pedestal structure of the support structure.

示例性地參考第1圖,根據能和任何其他敘述於此的實施例結合的實施例,支撐結構103能連接至第一真空處理裝置101的一第一壁104。此外,支撐結構103能連接至第二真空處理裝置102的一第二壁105。典型地,第二壁105面向第一壁104,如在第1圖中示例性示出者。因此,有利地,提供對於第一真空處理裝置和第二真空處理裝置的共享的強化,使得支撐結構的重量相較於真空處理裝置之個別的強化能降低。By way of example with reference to Figure 1, the support structure 103 can be coupled to a first wall 104 of the first vacuum processing apparatus 101 in accordance with an embodiment that can be combined with any of the other embodiments described herein. Additionally, the support structure 103 can be coupled to a second wall 105 of the second vacuum processing device 102. Typically, the second wall 105 faces the first wall 104, as exemplarily shown in FIG. Advantageously, therefore, a shared reinforcement of the first vacuum processing device and the second vacuum processing device is provided such that the weight of the support structure is reduced compared to the individual strengthening energy of the vacuum processing device.

根據能和任何其他敘述於此的實施例結合的實施例,第一真空處理裝置101能為一第一串聯式(in-line)處理裝置。另外,第二真空處理裝置102能為一第二串聯式處理裝置。特別是,第一真空處理裝置101可為一第一垂直處理裝置。額外地或替代性地,第二真空處理裝置102可為一第二垂直處理裝置。因此,有利地,處理設備的佔地能降低。According to an embodiment which can be combined with any of the other embodiments described herein, the first vacuum processing apparatus 101 can be a first in-line processing apparatus. Additionally, the second vacuum processing device 102 can be a second tandem processing device. In particular, the first vacuum processing device 101 can be a first vertical processing device. Additionally or alternatively, the second vacuum processing device 102 can be a second vertical processing device. Advantageously, therefore, the footprint of the processing device can be reduced.

在本揭露中,「垂直處理裝置」,能被理解為處理裝置係配置成用於處理在實質上垂直的方向中的基板(實質上垂直 = 垂直 ± 15°)。如本揭露通篇所使用的,用詞如「垂直方向(vertical direction或vertical orientation)」,被理解為和「水平方向(horizontal direction或horizontal orientation)」有所區分。In the present disclosure, "vertical processing device" can be understood to mean that the processing device is configured to process a substrate in a substantially vertical direction (substantially vertical = vertical ± 15°). As used throughout this disclosure, terms such as "vertical direction or vertical orientation" are understood to be distinguished from "horizontal direction or horizontal orientation."

示例性地參考第1圖,根據能和任何其他敘述於此的實施例結合的實施例,支撐結構103包含一基座架結構106。特別是,基座架結構106支撐第一真空處理裝置101的一第一底壁104B。另外,基座架結構106支撐第二真空處理裝置102的一第二底壁105B。因此,有利地,提供共享的基座架結構,其支撐第一真空處理裝置和第二真空處理裝置二者。藉由提供如敘述於此的共享的基座架結構,支撐結構的重量相較於對真空處理裝置使用個別的基座架(base frame)能降低。Illustratively with reference to Figure 1, the support structure 103 includes a pedestal frame structure 106 in accordance with an embodiment that can be combined with any of the other embodiments described herein. In particular, the base frame structure 106 supports a first bottom wall 104B of the first vacuum processing apparatus 101. Additionally, the pedestal frame structure 106 supports a second bottom wall 105B of the second vacuum processing apparatus 102. Accordingly, advantageously, a shared pedestal frame structure is provided that supports both the first vacuum processing device and the second vacuum processing device. By providing a shared pedestal structure as described herein, the weight of the support structure can be reduced as compared to the use of individual base frames for vacuum processing equipment.

根據能和任何其他敘述於此的實施例結合的實施例,支撐結構103可包含一強化架結構107,如在第1圖中示例性示出者。典型地,支撐結構103,特別是強化架結構107,能連接至第一真空處理裝置101的一第一背壁104A。此外,支撐結構103,特別是強化架結構107,能連接至第二真空處理裝置102的一第二背壁105A。舉例來說,強化架結構107能提供在第一真空處理裝置101的第一背壁104A和第二真空處理裝置102的第二背壁105A之間,如在第1圖中示例性示出者。更特別地,強化架結構107能配置在提供於第一真空處理裝置101和第二真空處理裝置102之間的大氣空間108中。因此,有利地,各個真空處理裝置的背壁能被強化,使得背壁能承受大氣壓力至真空壓力的差異。According to an embodiment that can be combined with any of the other embodiments described herein, the support structure 103 can include a stiffener structure 107, as exemplarily shown in FIG. Typically, the support structure 103, and in particular the reinforced frame structure 107, can be coupled to a first back wall 104A of the first vacuum processing apparatus 101. In addition, the support structure 103, and in particular the reinforced frame structure 107, can be coupled to a second back wall 105A of the second vacuum processing apparatus 102. For example, the stiffener structure 107 can be provided between the first back wall 104A of the first vacuum processing device 101 and the second back wall 105A of the second vacuum processing device 102, as exemplarily shown in FIG. . More specifically, the stiffener structure 107 can be disposed in the atmospheric space 108 provided between the first vacuum processing device 101 and the second vacuum processing device 102. Advantageously, therefore, the back wall of each vacuum processing device can be strengthened such that the back wall can withstand the difference in atmospheric pressure to vacuum pressure.

示例性地參考第1圖,根據能和任何其他敘述於此的實施例結合的實施例,強化架結構107係連接至基座架結構106。舉例來說,基座架結構106能包含一平台106P,強化架結構107係連接至平台106P。特別是,平台106P能配置成用於支撐在平台的頂部上行走的人,其例如在真空處理裝置的保養期間在平台的頂部上行走。或者,強化架結構107和基座架結構106可為一體(integral)的架結構,其中基座架結構106包含平台106P。Referring to FIG. 1 by way of example, the reinforced frame structure 107 is coupled to the pedestal frame structure 106 in accordance with an embodiment that can be combined with any of the other embodiments described herein. For example, the pedestal frame structure 106 can include a platform 106P that is coupled to the platform 106P. In particular, the platform 106P can be configured to support a person walking on the top of the platform, for example walking on top of the platform during maintenance of the vacuum processing device. Alternatively, the stiffener structure 107 and the base frame structure 106 can be an integral shelf structure, wherein the base frame structure 106 includes a platform 106P.

根據能和任何其他敘述於此的實施例結合的實施例,第一真空處理裝置101和第二真空處理裝置102之間的大氣空間108提供一保養區。特別是,該保養區提供對第一真空處理裝置101之一第一背側的進出。此外,該保養區提供對第二真空處理裝置102之一第二背側的進出。因此,如敘述於此的處理設備的實施例有利地提供用於從提供在支撐結構的一基座架結構上方的大氣空間,保養第一真空處理裝置和/或第二真空處理裝置。According to an embodiment that can be combined with any of the other embodiments described herein, the atmosphere space 108 between the first vacuum processing device 101 and the second vacuum processing device 102 provides a service area. In particular, the maintenance zone provides access to the first back side of one of the first vacuum processing devices 101. In addition, the service zone provides access to the second back side of one of the second vacuum processing devices 102. Accordingly, embodiments of the processing apparatus as described herein are advantageously provided for servicing a first vacuum processing apparatus and/or a second vacuum processing apparatus from an atmospheric space provided above a pedestal structure of the support structure.

示例性地參考第1圖,根據能和任何其他敘述於此的實施例結合的實施例,支撐結構103能連接至第一真空處理裝置101的一第一真空腔室110。另外,支撐結構103能連接至第二真空處理裝置102的一第二真空腔室120。典型地,第一真空腔室110係相對於第二真空腔室120配置,如在第1圖中示例性示出者。舉例來說,第一真空腔室110和/或第二真空腔室120係選自於由下列選項構成的群組:裝載腔室;處理腔室,特別是;移送腔室;和具有用於產生工業級真空之真空泵的真空腔室。By way of example with reference to Figure 1, the support structure 103 can be coupled to a first vacuum chamber 110 of the first vacuum processing apparatus 101 in accordance with an embodiment that can be combined with any of the other embodiments described herein. Additionally, the support structure 103 can be coupled to a second vacuum chamber 120 of the second vacuum processing device 102. Typically, the first vacuum chamber 110 is configured relative to the second vacuum chamber 120, as exemplarily shown in FIG. For example, the first vacuum chamber 110 and/or the second vacuum chamber 120 are selected from the group consisting of: a loading chamber; a processing chamber, in particular; a transfer chamber; A vacuum chamber that produces a vacuum pump of industrial grade vacuum.

因此,相較於傳統的處理設備,敘述於此的實施例提供用於關於增加產量、降低佔地、以及降低操作、維護、和製造成本之改善的處理設備,例如用於顯示器製造。Thus, embodiments described herein provide processing equipment for increased throughput, reduced footprint, and reduced operational, maintenance, and manufacturing costs, such as for display manufacturing, as compared to conventional processing equipment.

作為一個能和其他敘述於此的配置型態及實施例結合的示例,設備100包含一第一真空處理裝置101、一第二真空處理裝置102、和一支撐結構103。支撐結構係配置在第一真空處理裝置101和第二真空處理裝置102之間的一大氣空間108中。另外,支撐結構103包含一基座架結構106,基座架結構106支撐第一真空處理裝置101之一第一真空腔室110的一第一底壁104B。此外,基座架結構106支撐第二真空處理裝置102之一第二真空腔室120的一第二底壁105B。支撐結構103包含一強化架結構107,強化架結構107連接至第一真空腔室110的一第一背壁104A。此外,強化架結構107連接至第二真空腔室120的一第二背壁105A。第一真空腔室110係相對於第二真空腔室120配置,如在第1圖中示例性示出者。As an example that can be combined with other configurations and embodiments described herein, apparatus 100 includes a first vacuum processing device 101, a second vacuum processing device 102, and a support structure 103. The support structure is disposed in an atmospheric space 108 between the first vacuum processing device 101 and the second vacuum processing device 102. In addition, the support structure 103 includes a pedestal structure 106 that supports a first bottom wall 104B of the first vacuum chamber 110 of the first vacuum processing apparatus 101. In addition, the pedestal frame structure 106 supports a second bottom wall 105B of the second vacuum chamber 120 of one of the second vacuum processing devices 102. The support structure 103 includes a stiffener structure 107 that is coupled to a first back wall 104A of the first vacuum chamber 110. Further, the stiffener structure 107 is coupled to a second back wall 105A of the second vacuum chamber 120. The first vacuum chamber 110 is configured relative to the second vacuum chamber 120, as exemplarily shown in FIG.

第2A~2C圖示出根據另外的敘述於此之實施例的用於處理基板的設備的俯視示意圖。特別是,第2A~2C圖示出如敘述於此之處理設備的不同佈置的示例。2A-2C illustrate top plan views of an apparatus for processing a substrate according to another embodiment of the present invention. In particular, FIGS. 2A-2C illustrate examples of different arrangements of processing devices as described herein.

第2A圖示出處理設備的第一示例性實施例,該處理設備具有一第一真空處理裝置101和一第二真空處理裝置102。第一真空處理裝置101包含一第一裝載腔室111和一第一真空處理腔室123。舉例來說,第一真空處理裝置101能經由一閥,例如一閘閥115,連接至第一真空處理腔室123。在本揭露中,「閘閥」,能被理解成允許對相鄰之真空腔室真空密封的一口部。因此,第二真空處理裝置102可包含一第二裝載腔室112和一第二真空處理腔室124。類似地,第二裝載腔室112能經由一閘閥115連接至第二真空處理腔室124,如在第2A圖中示例性示出者。因此,在第一真空處理裝置和/或第二真空處理裝置之個別真空腔室中的真空,能彼此獨立地被控制。FIG. 2A shows a first exemplary embodiment of a processing apparatus having a first vacuum processing apparatus 101 and a second vacuum processing apparatus 102. The first vacuum processing apparatus 101 includes a first loading chamber 111 and a first vacuum processing chamber 123. For example, the first vacuum processing device 101 can be coupled to the first vacuum processing chamber 123 via a valve, such as a gate valve 115. In the present disclosure, a "gate valve" can be understood as a portion that allows a vacuum seal to an adjacent vacuum chamber. Accordingly, the second vacuum processing apparatus 102 can include a second loading chamber 112 and a second vacuum processing chamber 124. Similarly, the second loading chamber 112 can be coupled to the second vacuum processing chamber 124 via a gate valve 115, as exemplarily shown in FIG. 2A. Therefore, the vacuum in the individual vacuum chambers of the first vacuum processing device and/or the second vacuum processing device can be controlled independently of each other.

另外,如在第2A圖中示例性示出的,第一裝載腔室111能包含一第一閘閥115A,且第二裝載腔室112能包含一第二閘閥115B。舉例來說,第一閘閥115A和第二閘閥115B能提供用於對相鄰之用在將基板裝載至處理設備中的一基板裝載模組180的連接,如在第3B圖中示例性示出者。Additionally, as exemplarily shown in FIG. 2A, the first loading chamber 111 can include a first gate valve 115A, and the second loading chamber 112 can include a second gate valve 115B. For example, the first gate valve 115A and the second gate valve 115B can provide connections for adjacent substrate loading modules 180 for loading substrates into the processing apparatus, as exemplarily shown in FIG. 3B By.

示例性地參考第2A圖,根據能和任何其他敘述於此的實施例結合的實施例,第一真空處理腔室123和第二真空處理腔室124能提供具有一或更多個藉由元件符號133和134來指示之沉積源或沉積源陣列的沉積區。By way of example with reference to FIG. 2A, the first vacuum processing chamber 123 and the second vacuum processing chamber 124 can be provided with one or more components by any other embodiment that can be combined with any of the other embodiments described herein. Symbols 133 and 134 are used to indicate the deposition area of the deposition source or deposition source array.

根據處理設備的第二示例性實施例,另外的真空腔室(121、122)可提供在第一真空處理裝置101和第二真空處理裝置102各自的裝載腔室(111、112)和各自的真空處理腔室(123、124)之間,如在第2B圖中示例性示出者。這類配置型態可有利於在各個裝載腔室(111、112)以一第一真空壓力產生一第一真空,並在另外的真空腔室(121、122)以一第二真空壓力產生一第二真空。因此,在二個分開的步驟中能降低真空壓力。如在第2B圖中示例性示出的,另外的真空腔室(121、122)能包含用於將該另外的真空腔室連接至裝載腔室和真空處理腔室的閘閥115。According to a second exemplary embodiment of the processing apparatus, additional vacuum chambers (121, 122) may be provided in respective loading chambers (111, 112) of the first vacuum processing apparatus 101 and the second vacuum processing apparatus 102 and respective Between the vacuum processing chambers (123, 124), as exemplarily shown in Figure 2B. This type of configuration may facilitate generating a first vacuum at each of the load chambers (111, 112) at a first vacuum pressure and a second vacuum pressure at the other vacuum chambers (121, 122). The second vacuum. Therefore, the vacuum pressure can be reduced in two separate steps. As exemplarily shown in FIG. 2B, additional vacuum chambers (121, 122) can include gate valves 115 for connecting the additional vacuum chambers to the loading chamber and the vacuum processing chamber.

根據一些能和其他敘述於此的實施例結合的實施例,處理設備能配置成用於基板上的靜態層沉積,示例性地示於第2A和2B圖中。或者,處理設備能配置成用於基板上的動態層沉積,如在第2C圖中示例性示出者。動態沉積製程,例如濺射沉積製程,能被理解成其中在濺射沉積製程進行時,基板係沿著傳輸方向移動通過沉積區的沉積製程。也就是說,基板在濺射沉積製程期間非為靜態。According to some embodiments which can be combined with other embodiments described herein, the processing apparatus can be configured for static layer deposition on a substrate, exemplarily shown in Figures 2A and 2B. Alternatively, the processing device can be configured for dynamic layer deposition on a substrate, as exemplarily shown in Figure 2C. A dynamic deposition process, such as a sputter deposition process, can be understood as a deposition process in which a substrate is moved through a deposition zone along a transport direction as the sputter deposition process proceeds. That is, the substrate is not static during the sputter deposition process.

如此,根據如在第2C圖中示例性示出的一些實施方案,處理設備能被配置成用於動態處理,特別是動態沉積,具有串聯式處理裝置。特別是,在本揭露中,「串聯式處理裝置」,能被理解成沿線配置之二或更多個真空腔室的配置。更特別地,如敘述於此的「串聯式處理裝置」,能被配置成用於一或更多個層在垂直基板上的就位。舉例來說,一或更多個層能在靜態沉積製程或動態沉積製程中被沉積。沉積製程能為物理氣相沉積製程如濺射製程、或化學氣相沉積製程。As such, according to some embodiments as exemplarily shown in FIG. 2C, the processing device can be configured for dynamic processing, particularly dynamic deposition, with a tandem processing device. In particular, in the present disclosure, a "series processing device" can be understood as a configuration of two or more vacuum chambers arranged along a line. More particularly, a "series processing device" as described herein can be configured for seating of one or more layers on a vertical substrate. For example, one or more layers can be deposited in a static deposition process or a dynamic deposition process. The deposition process can be a physical vapor deposition process such as a sputtering process, or a chemical vapor deposition process.

串聯式處理裝置,特別是配置成用於動態層沉積者,提供用於均勻處理基板,例如大面積基板,像是長方形玻璃板。處理工具,例如一或更多個沉積源,主要是在一個方向(例如垂直方向)中延伸,而基板是在第二個、不同的方向(例如第一傳輸方向1或第二傳輸方向1’,其能如在第2C圖中示例性示出的為水平方向)中移動。Tandem processing devices, particularly those configured for use in dynamic layer depositors, are provided for uniform processing of substrates, such as large area substrates, such as rectangular glass sheets. A processing tool, such as one or more deposition sources, extends primarily in one direction (eg, a vertical direction) while the substrate is in a second, different direction (eg, a first transport direction 1 or a second transport direction 1' It can move in the horizontal direction as exemplarily shown in FIG. 2C.

用於動態真空沉積的設備或系統,例如串聯式處理設備或系統,具有在一個方向中的處理均勻性,例如層均勻性,係由以恆定速度移動基板和使一或更多個濺射沉積源保持穩定的能力限制的優點。串聯式處理設備或動態沉積設備的沉積製程,係由通過一或更多個沉積源之基板的移動所決定。對於串聯式處理設備來說,沉積區或處理區能為實質上線形的區域,用於處理例如大面積基板。沉積區能為沉積材料在其中從一或更多個沉積源吐出以被沉積在基板上的區。相對於此,對於靜態處理設備來說,沉積區或處理區將基本上對應至基板的區域。Apparatus or system for dynamic vacuum deposition, such as a tandem processing apparatus or system, having process uniformity in one direction, such as layer uniformity, by moving the substrate at a constant velocity and depositing one or more sputters The source maintains the advantages of a stable capacity limit. The deposition process of a tandem processing apparatus or a dynamic deposition apparatus is determined by the movement of a substrate through one or more deposition sources. For tandem processing equipment, the deposition or processing zone can be a substantially linear region for processing, for example, a large area substrate. The deposition zone can be a zone in which the deposition material is ejected from one or more deposition sources to be deposited on the substrate. In contrast, for a static processing device, the deposition or processing region will substantially correspond to the region of the substrate.

在一些實施方案中,相較於靜態處理系統,串聯式處理系統如用於動態沉積者的另一個差異,能藉由其他真空腔室(例如第一真空處理裝置101的真空腔室121、123、和125,以及/或第二真空處理裝置102的真空腔室122、124、和126)中的裝載腔室不包含用於一真空腔室相對於另一真空腔室之真空氣密密封的裝置的事實來系統化定義,如在第2C圖中示例性示出者。相對於此,如在第2A和2B圖中示例性示出的,靜態處理設備可具有能相對於彼此藉由閘閥115真空氣密密封的真空腔室(例如第一真空處理裝置101的真空腔室111、121、和123,以及/或第二真空處理裝置102的真空腔室112、122、和124)。In some embodiments, a tandem processing system, such as another difference for a dynamic depositor, can be utilized by other vacuum chambers (eg, vacuum chambers 121, 123 of the first vacuum processing device 101) compared to a static processing system. And 125, and/or the loading chambers in the vacuum chambers 122, 124, and 126 of the second vacuum processing device 102 do not include a vacuum hermetic seal for a vacuum chamber relative to another vacuum chamber. The facts of the device are systematically defined, as exemplarily shown in Figure 2C. In contrast, as exemplarily shown in FIGS. 2A and 2B, the static processing apparatus may have a vacuum chamber (eg, a vacuum chamber of the first vacuum processing apparatus 101) that can be hermetically sealed with respect to each other by the gate valve 115. Chambers 111, 121, and 123, and/or vacuum chambers 112, 122, and 124 of the second vacuum processing apparatus 102).

如在第2A~2C圖中示例性示出的,根據能和任何其他敘述於此的實施例結合的實施例,支撐結構,特別是強化架結構107,係配置在提供於第一真空處理裝置101和第二真空處理裝置102之間的大氣空間108中。另外,如第2A~2C圖所示,二或更多個強化架結構107可提供在相對配置之第一真空處理裝置101和第二真空處理裝置102的真空腔室之間。因此,應該理解的是,二或更多個基座架結構106可提供用於支撐相對配置之第一真空處理裝置101和第二真空處理裝置102的真空腔室。As exemplarily shown in FIGS. 2A-2C, the support structure, particularly the reinforced frame structure 107, is disposed in the first vacuum processing apparatus according to an embodiment that can be combined with any other embodiment described herein. The atmosphere space 108 between the 101 and the second vacuum processing device 102. In addition, as shown in FIGS. 2A-2C, two or more reinforcing frame structures 107 may be provided between the vacuum chambers of the first vacuum processing apparatus 101 and the second vacuum processing apparatus 102 that are disposed opposite each other. Accordingly, it should be understood that two or more pedestal frame structures 106 can provide vacuum chambers for supporting the opposing first and second vacuum processing devices 101, 102.

根據一些能和其他敘述於此的實施例結合的實施例,設備100包含一磁性懸浮系統,用於將基板載具固持在漂浮的狀態。選擇性地,可提供設備100一磁性驅動系統,該磁性驅動系統配置成用於在傳輸方向中,例如像是在第2C圖中示例性指出的第一傳輸方向1中,移動或傳送基板載具。磁性驅動系統能被包含在磁性懸浮系統中,或者能提供作為一個單獨的實體。In accordance with some embodiments that can be combined with other embodiments described herein, apparatus 100 includes a magnetic suspension system for holding the substrate carrier in a floating state. Alternatively, apparatus 100 may be provided with a magnetic drive system configured to move or transfer a substrate in a transport direction, such as, for example, in a first transport direction 1 exemplarily indicated in FIG. 2C. With. The magnetic drive system can be included in a magnetic suspension system or can be provided as a separate entity.

根據一些能和其他敘述於此的實施例結合的實施例,基板載具係以磁性懸浮系統支撐在真空處理系統中。舉例來說,磁性懸浮系統能包含複數個第一磁鐵,其在沒有機械接觸的情況下將基板載具支撐在一懸掛位置。磁性懸浮系統提供基板載具懸浮,亦即非接觸性的支撐。因此,能降低或避免起因於載具在用於動態沉積的設備中的移動的顆粒產生。磁性懸浮系統包含第一磁鐵,其提供力至基板載具的頂部,該力實質上等於重力。也就是說,基板載具非接觸性地懸掛在第一磁鐵下方。According to some embodiments that can be combined with other embodiments described herein, the substrate carrier is supported in a vacuum processing system with a magnetic suspension system. For example, a magnetic suspension system can include a plurality of first magnets that support the substrate carrier in a suspended position without mechanical contact. The magnetic suspension system provides substrate carrier suspension, ie non-contact support. Thus, particle generation resulting from movement of the carrier in the apparatus for dynamic deposition can be reduced or avoided. The magnetic suspension system includes a first magnet that provides a force to the top of the substrate carrier that is substantially equal to gravity. That is, the substrate carrier is non-contactly suspended below the first magnet.

另外,磁性懸浮系統能包含複數個第二磁鐵,其提供用於基板載具沿著傳輸方向的平移移動。基板載具能在設備中藉由第一磁鐵被非接觸性地支撐,並在設備中使用第二磁鐵而例如在真空腔室(例如第一真空處理裝置101的第一裝載腔室111及真空腔室121、123、和125、以及/或第二真空處理裝置102的第二裝載腔室112及真空腔室122、124、和126)之間被移動。Additionally, the magnetic suspension system can include a plurality of second magnets that provide translational movement for the substrate carrier in the direction of transport. The substrate carrier can be non-contactly supported in the apparatus by the first magnet and a second magnet is used in the apparatus, such as in a vacuum chamber (eg, the first loading chamber 111 of the first vacuum processing apparatus 101 and the vacuum) The chambers 121, 123, and 125, and/or the second loading chamber 112 of the second vacuum processing device 102 and the vacuum chambers 122, 124, and 126) are moved.

示例性地參考第3A和3B圖,敘述用於處理基板的一處理系統200的實施例。特別是,第3A圖示出根據敘述於此之實施例的處理系統200的透視示意圖,且第3B圖示出俯視示意圖。An embodiment of a processing system 200 for processing a substrate is described by way of example with reference to Figures 3A and 3B. In particular, Figure 3A shows a perspective schematic view of a processing system 200 in accordance with an embodiment described herein, and Figure 3B shows a top plan view.

處理系統200包含根據任何敘述於此之實施例的用於處理基板的一設備100。另外,處理系統200包含一基板裝載模組180,用於將基板裝載至用於處理基板的設備100中。基板裝載模組180包含一固持裝置140和一擺動模組160,固持裝置140用於固持基板,擺動模組160用於在一水平方向和一垂直方向之間改變基板方向。Processing system 200 includes an apparatus 100 for processing a substrate in accordance with any of the embodiments described herein. Additionally, processing system 200 includes a substrate loading module 180 for loading substrates into device 100 for processing substrates. The substrate loading module 180 includes a holding device 140 for holding the substrate, and a swinging module 160 for changing the substrate direction between a horizontal direction and a vertical direction.

舉例來說,基板裝載模組180能經由一或更多個閥,例如第一閘閥115A和第二閘閥115B,連接至用於處理基板的設備100。在一些實施例中,擺動模組以及一或更多個裝載腔室如第一裝載腔室111和/或第二裝載腔室112,能構成結合式的擺動模組和裝載腔室。具有基板位於其上的基板載具,能經由第一裝載腔室111的第一閘閥115A和/或第二裝載腔室112的第二閘閥115B被鎖固(lock)至設備100中。For example, the substrate loading module 180 can be coupled to the device 100 for processing a substrate via one or more valves, such as a first gate valve 115A and a second gate valve 115B. In some embodiments, the oscillating module and one or more loading chambers, such as the first loading chamber 111 and/or the second loading chamber 112, can form a combined oscillating module and loading chamber. The substrate carrier having the substrate thereon can be locked into the device 100 via the first gate valve 115A of the first loading chamber 111 and/or the second gate valve 115B of the second loading chamber 112.

根據能和任何其他敘述於此的實施例結合的實施例,固持裝置140包含一第一固持件和一第二固持件,第一固持件用於固持一基板,例如一第一基板,第二固持件用於固持另一基板,例如一第二基板,第二固持件和第一固持件垂直地堆疊。也就是說,第一基板固持件能至少部分地提供在第二基板固持件上方。由於第一固持件和第二固持件在彼此上方的配置,處理系統200的一寬度W能被降低,例如相較於其中固持件係彼此相鄰配置的系統係降低50%或更多。因此,能降低處理系統的佔地。According to an embodiment that can be combined with any other embodiments described herein, the holding device 140 includes a first holding member and a second holding member, the first holding member for holding a substrate, such as a first substrate, and a second The holder is for holding another substrate, such as a second substrate, and the second holder and the first holder are vertically stacked. That is, the first substrate holder can be at least partially provided over the second substrate holder. Due to the configuration of the first and second retaining members above each other, a width W of the processing system 200 can be reduced, for example, by 50% or more compared to systems in which the retaining members are disposed adjacent to one another. Therefore, the footprint of the processing system can be reduced.

考慮到本揭露,應該理解的是,本揭露的實施例談論到顯示器工業。舉例來說,顯示器能以像是化學氣相沉積(CVD)和物理氣相沉積(PVD)的製程製造在大面積基板上。舉例來說,TFT顯示器能被製造在大面積基板上。由於增加的顯示器尺寸,真空處理系統的尺寸增加,特別是在基板水平裝載的例子裡。在本揭露中,能降低用於基板裝載的無塵室區的尺寸,亦即佔地尺寸,因為固持件如基板裝載件係垂直地堆疊。顯示器能為平坦的、或者平滑曲面或彎曲的部件。舉例來說,各種不同世代的玻璃基板能用於顯示器製造。In view of the present disclosure, it should be understood that the embodiments of the present disclosure are directed to the display industry. For example, displays can be fabricated on large area substrates in processes such as chemical vapor deposition (CVD) and physical vapor deposition (PVD). For example, a TFT display can be fabricated on a large area substrate. Due to the increased display size, the size of the vacuum processing system has increased, particularly in the case of horizontal loading of substrates. In the present disclosure, the size of the clean room area for substrate loading, that is, the footprint size, can be reduced because the holding members such as the substrate loading members are vertically stacked. The display can be flat, or smooth curved or curved parts. For example, glass substrates of various generations can be used in display manufacturing.

如在第3A圖中示例性示出的,基板10能在一裝載/卸載位置移交至基板裝載模組180上方。這典型地在基板處於水平方向的情況下完成。舉例來說,基板能自基板盒(cassette)移交。基板能被提供至第一固持件,例如一第一白努利固持件142。舉例來說,第一固持件能為用於將基板裝載在擺動模組160上的固持件。經處理的基板能自第二固持件接收,第二固持件例如是一第二白努利固持件144。舉例來說,第二固持件能為用於將基板從擺動模組160卸載的固持件。應該理解的是,第一固持件和第二固持件可交換。另外,固持件的其中一者或二者,能用於基板的裝載和卸載。As exemplarily shown in FIG. 3A, the substrate 10 can be handed over to the substrate loading module 180 at a loading/unloading location. This is typically done with the substrate in a horizontal orientation. For example, the substrate can be handed over from a cassette. The substrate can be provided to a first holder, such as a first whiteurly holder 142. For example, the first holder can be a holder for loading the substrate on the swing module 160. The processed substrate can be received from the second holder, such as a second whiteurly holder 144. For example, the second retaining member can be a retaining member for unloading the substrate from the swing module 160. It should be understood that the first retaining member and the second retaining member are interchangeable. Additionally, one or both of the holders can be used for loading and unloading of the substrate.

在本揭露中,「白努利固持件」,能被理解成配置成用於在基板和用於基板懸浮的表面之間提供壓力,例如負壓(under-pressure)或減壓(reduced pressure)的固持件。特別是,一間隙或空間能提供在該表面和基板之間,氣流通過其流動。因此,白努利固持件基於白努利效應,提供用於懸浮基板。更特別地,白努利固持件(或白努利類型固持件)支撐基板,而未作出和基板的面(直接)機械接觸。特別是,基板漂浮在氣墊(gas cushion)上。也就是說,固持裝置140非接觸地位在基板10的面上。用詞「減壓」和「負壓」,能相對於白努利固持件所處的環境壓力被定義。特別是,基板和該表面之間的壓力,例如減壓或負壓,係配置成用於基板的懸浮。舉例來說,該壓力和環境壓力之間的差異,係足以補償基板重量的力量。In the present disclosure, a "Benuli support" can be understood to be configured to provide a pressure between a substrate and a surface for suspending the substrate, such as under-pressure or reduced pressure. Holder. In particular, a gap or space can be provided between the surface and the substrate through which the airflow flows. Therefore, the Bainuoli retainer is provided for suspending the substrate based on the Cannino effect. More specifically, the Cannoli retainer (or the Cannino type retainer) supports the substrate without making (direct) mechanical contact with the face of the substrate. In particular, the substrate floats on a gas cushion. That is, the holding device 140 is in a non-contact position on the face of the substrate 10. The words "decompression" and "negative pressure" can be defined relative to the environmental stress of the Bainuoli holdings. In particular, the pressure between the substrate and the surface, such as reduced pressure or negative pressure, is configured for suspension of the substrate. For example, the difference between this pressure and ambient pressure is sufficient to compensate for the weight of the substrate.

根據本揭露的實施例,固持件能被堆疊成至少部分地垂直地在彼此上方。一載具,例如一靜電吸盤(electrostatic chuck, E-Chuck)能被提供在擺動模組160上。基板能使用第一固持件和/或第二固持件被裝載至載具上。基板能以水平狀態被裝載。在將基板裝載在載具上之後,擺動模組160,特別是擺動模組160的一擺動模組板164,能從一實質上水平的方向移動至一實質上垂直的方向,例如藉由擺動模組160的一臂162的移動。第3A和3B圖示出在一實質上垂直的方向中的擺動模組160。According to embodiments of the present disclosure, the holders can be stacked at least partially vertically above each other. A carrier such as an electrostatic chuck (E-Chuck) can be provided on the swing module 160. The substrate can be loaded onto the carrier using the first holder and/or the second holder. The substrate can be loaded in a horizontal state. After the substrate is loaded on the carrier, the swing module 160, and in particular a swing module board 164 of the swing module 160, can be moved from a substantially horizontal direction to a substantially vertical direction, for example by swinging Movement of one arm 162 of module 160. 3A and 3B illustrate the wobble module 160 in a substantially vertical direction.

因此,第一固持件和第二固持件可在架結構和擺動模組160之間水平地移動。另外,固持件和擺動模組160可相對於彼此垂直地移動,以將基板放置在擺動模組160上的載具上,或從擺動模組載自具移除基板。垂直的相對移動,能藉由擺動模組、固持件、或二者的移動來提供。Therefore, the first holder and the second holder can be horizontally moved between the frame structure and the swing module 160. In addition, the holder and the swing module 160 are vertically movable relative to each other to place the substrate on the carrier on the swing module 160 or to remove the substrate from the swing module. The relative relative movement of the vertical can be provided by the movement of the swinging module, the holding member, or both.

擺動模組160能被配置成用於裝載具有基板位於其上之載具至第一裝載腔室111和/或第二裝載腔室112上。擺動模組160能從水平方向順時針或逆時針旋轉。因此,載具能被裝載至各個裝載腔室中,且/或能從各個裝載腔室卸載。舉例來說,裝載腔室可被交替使用。The oscillating module 160 can be configured to load a carrier having a substrate thereon onto the first loading chamber 111 and/or the second loading chamber 112. The swing module 160 can be rotated clockwise or counterclockwise from the horizontal direction. Thus, the carrier can be loaded into each loading chamber and/or can be unloaded from each loading chamber. For example, the loading chambers can be used interchangeably.

裝載腔室能被抽空。在抽空裝載腔室之後,載具能被傳輸至處理設備的一或更多個真空腔室中,如敘述於此。如第3A和3B圖所示,能提供二條線。第一裝載腔室111以及真空腔室121、123、和125能形成第一真空處理裝置101。第二裝載腔室112以及真空腔室122、124、和126能形成第二真空處理裝置102。The loading chamber can be evacuated. After evacuating the loading chamber, the carrier can be transferred to one or more vacuum chambers of the processing apparatus, as described herein. As shown in Figures 3A and 3B, two lines can be provided. The first loading chamber 111 and the vacuum chambers 121, 123, and 125 can form the first vacuum processing device 101. The second loading chamber 112 and the vacuum chambers 122, 124, and 126 can form a second vacuum processing device 102.

示例性地參考第3A和3B圖,根據一些能和任何其他敘述於此的實施例結合的實施例,可提供一無塵室區150。舉例來說,固持裝置140和/或擺動模組160能提供在無塵室區150中。Illustratively with reference to Figures 3A and 3B, a clean room zone 150 can be provided in accordance with some embodiments that can be combined with any of the other embodiments described herein. For example, the holding device 140 and/or the oscillating module 160 can be provided in the clean room zone 150.

從第3A和3B圖應該理解的是,有利地,如敘述於此的處理系統200,提供用於使用二個串聯式單元,例如第一真空處理裝置101和第二真空處理裝置102,同時處理二或更多個基板,以增加產量。使用如敘述於此的成對處理設備同時處理,降低處理系統的佔地。特別是對於大面積基板來說,佔地能是降低持有處理系統的成本的相關因素。It will be understood from Figures 3A and 3B that, advantageously, the processing system 200 as described herein is provided for use with two tandem units, such as the first vacuum processing device 101 and the second vacuum processing device 102, simultaneously Two or more substrates to increase production. The simultaneous processing of the paired processing devices as described herein reduces the footprint of the processing system. Especially for large-area substrates, land occupation can be a relevant factor in reducing the cost of holding a processing system.

示例性地參考第4圖中所示的流程圖,敘述用於保養用在處理基板的設備的一方法300。特別是,方法300包含提供(方塊310)用於處理基板的一設備100,例如根據任何敘述於此之實施例的用於處理基板的一設備100。設備100包含一第一真空處理裝置101和一第二真空處理裝置102。第一真空處理裝置101和第二真空處理裝置102係由共享的一支撐結構103所支撐。另外,該方法包含從提供在支撐結構103的一基座架結構上方的一大氣空間108,保養(方塊320)第一真空處理裝置101。額外地或替代性地,該方法包含從提供在支撐結構103的上方的該大氣空間108,保養(方塊330)第二真空處理裝置102。A method 300 for servicing an apparatus for processing a substrate is exemplarily described with reference to the flow chart shown in FIG. In particular, method 300 includes providing (block 310) an apparatus 100 for processing a substrate, such as an apparatus 100 for processing a substrate in accordance with any of the embodiments described herein. Apparatus 100 includes a first vacuum processing device 101 and a second vacuum processing device 102. The first vacuum processing device 101 and the second vacuum processing device 102 are supported by a shared support structure 103. Additionally, the method includes servicing (block 320) the first vacuum processing apparatus 101 from an atmospheric space 108 provided above a pedestal structure of the support structure 103. Additionally or alternatively, the method includes servicing (block 330) the second vacuum processing device 102 from the atmospheric space 108 provided above the support structure 103.

考慮到上述內容,應該理解的是,如敘述於此實施例有利地提供用於增加產量、降低佔地、以及降低操作、維護、和製造成本。特別是,藉由提供敘述於此的成對處理設備,能增加產量且能降低佔地。另外,藉由提供如敘述於此的支撐結構,第一真空處理裝置和第二真空處理裝置的背壁能有利地被以高效且節省空間的方式強化。另外,如敘述於此實施例有利地提供用於幫助保養真空處理系統,特別是具有如敘述於此之成對處理設備的真空處理系統。In view of the foregoing, it should be understood that this embodiment is advantageously provided for increased throughput, reduced footprint, and reduced operational, maintenance, and manufacturing costs as described. In particular, by providing the paired processing apparatus described herein, the yield can be increased and the footprint can be reduced. In addition, by providing a support structure as described herein, the back walls of the first vacuum processing device and the second vacuum processing device can advantageously be reinforced in an efficient and space-saving manner. Additionally, as described herein, embodiments are advantageously provided to assist in the maintenance of a vacuum processing system, particularly a vacuum processing system having a pair of processing apparatus as described herein.

儘管前述內容是關於本揭露的實施例,可在不背離本揭露的基本範圍的情況下,設計出本揭露其他和更進一步的實施例,而本揭露的範圍係由下列的申請專利範圍決定。While the foregoing is directed to the embodiments of the present disclosure, the disclosure of the embodiments of the present invention, and the scope of the disclosure is determined by the following claims.

特別是,此書面敘述使用示例以對於本揭露進行揭露,包含其最佳模式,並且也使得本發明所屬技術領域中任何具有通常知識者能夠實行所述題材,包含製造和使用任何裝置或系統、及執行任何被納入的方法。儘管前述內容已揭露各種不同的特定實施例,上述實施例中不互相違背的技術特徵係可彼此結合。可專利範圍係由請求項所決定,且如果申請專利範圍具有不異於請求項之字面語言的結構元件、或如果申請專利範圍包含與請求項之字面語言無實質上差異的等價結構元件,則其他的示例也意欲被包括在請求項的範圍之中。In particular, the written description uses examples to disclose the present disclosure, including the best mode thereof, and also to enable any person skilled in the art to practice the subject matter, including the manufacture and use of any device or system, And perform any methods that are included. Although the foregoing has disclosed various specific embodiments, the technical features that do not contradict each other in the above-described embodiments can be combined with each other. The patentable scope is determined by the claim, and if the scope of the patent application has structural elements that are no different from the literal language of the claim, or if the scope of the patent application contains equivalent structural elements that are not substantially different from the literal language of the claim, Other examples are also intended to be included in the scope of the claim.

1‧‧‧第一傳輸方向1‧‧‧First transmission direction

1'‧‧‧第二傳輸方向1'‧‧‧second transmission direction

10‧‧‧基板10‧‧‧Substrate

100‧‧‧設備100‧‧‧ Equipment

101‧‧‧第一真空處理裝置101‧‧‧First vacuum processing unit

102‧‧‧第二真空處理裝置102‧‧‧Second vacuum treatment unit

103‧‧‧支撐結構103‧‧‧Support structure

104‧‧‧第一壁104‧‧‧First Wall

104A‧‧‧第一背壁104A‧‧‧First back wall

104B‧‧‧第一底壁104B‧‧‧ first bottom wall

105‧‧‧第二壁105‧‧‧ second wall

105A‧‧‧第二背壁105A‧‧‧Second back wall

105B‧‧‧第二底壁105B‧‧‧ second bottom wall

106‧‧‧基座架結構106‧‧‧Base frame structure

106P‧‧‧平台106P‧‧‧ platform

107‧‧‧強化架結構107‧‧‧Strength frame structure

108‧‧‧大氣空間108‧‧‧Atmospheric space

110‧‧‧第一真空腔室110‧‧‧First vacuum chamber

111‧‧‧第一裝載腔室111‧‧‧First loading chamber

112‧‧‧第二裝載腔室112‧‧‧Second loading chamber

115‧‧‧閘閥115‧‧‧ gate valve

115A‧‧‧第一閘閥115A‧‧‧First Gate Valve

115B‧‧‧第二閘閥115B‧‧‧Second gate valve

120‧‧‧第二真空腔室120‧‧‧Second vacuum chamber

121‧‧‧真空腔室121‧‧‧vacuum chamber

122‧‧‧真空腔室122‧‧‧vacuum chamber

123‧‧‧第一真空處理腔室123‧‧‧First vacuum processing chamber

124‧‧‧第二真空處理腔室124‧‧‧Second vacuum processing chamber

125‧‧‧真空腔室125‧‧‧vacuum chamber

126‧‧‧真空腔室126‧‧‧vacuum chamber

133‧‧‧元件符號133‧‧‧Component symbol

134‧‧‧元件符號134‧‧‧Component symbol

140‧‧‧固持裝置140‧‧‧ Holding device

142‧‧‧第一白努利固持件142‧‧‧First Bainuuli Holder

144‧‧‧第二白努利固持件144‧‧‧Second Bainuuli Holder

150‧‧‧無塵室區150‧‧‧Clean room area

160‧‧‧擺動模組160‧‧‧Swing module

162‧‧‧臂162‧‧‧ Arm

164‧‧‧擺動模組板164‧‧‧Swing module board

180‧‧‧基板裝載模組180‧‧‧Substrate loading module

200‧‧‧處理系統200‧‧‧Processing system

300‧‧‧方法300‧‧‧ method

310‧‧‧方塊310‧‧‧ square

320‧‧‧方塊320‧‧‧ squares

330‧‧‧方塊330‧‧‧ square

W‧‧‧寬度W‧‧‧Width

為了能理解本揭露上述特徵的細節,可藉由參照實施例來得到對於簡單總括於上之揭露內容更詳細的敘述。所附圖式有關本揭露的實施例,並如下所述: 第1圖示出根據敘述於此之實施例的用於處理基板的設備的側視示意圖。 第2A~2C圖示出根據另外的敘述於此之實施例的用於處理基板的設備的俯視示意圖。 第3A圖示出根據敘述於此之實施例的處理系統的透視示意圖。 第3B圖示出根據敘述於此之實施例的處理系統的俯視示意圖。 第4圖示出用於闡明根據敘述於此之實施例的用於保養用在處理基板的設備的方法的流程圖。In order to understand the details of the above-described features, a more detailed description of the disclosure of the present disclosure will be made by referring to the embodiments. The drawings relate to embodiments of the present disclosure and are as follows: Figure 1 shows a schematic side view of an apparatus for processing a substrate according to the embodiments described herein. 2A-2C illustrate top plan views of an apparatus for processing a substrate according to another embodiment of the present invention. Figure 3A shows a perspective schematic view of a processing system in accordance with an embodiment described herein. Figure 3B shows a top plan view of a processing system in accordance with an embodiment described herein. Fig. 4 is a flow chart for explaining a method for servicing an apparatus for processing a substrate according to the embodiment described herein.

Claims (20)

一種用於處理基板的設備(100),包括: 一第一真空處理裝置(101); 一第二真空處理裝置(102);以及 一支撐結構(103),配置在該第一真空處理裝置(101)和該第二真空處理裝置(102)之間的一大氣空間(108)中。A device (100) for processing a substrate, comprising: a first vacuum processing device (101); a second vacuum processing device (102); and a support structure (103) disposed in the first vacuum processing device ( 101) and an atmosphere (108) between the second vacuum processing device (102). 如申請專利範圍第1項所述之設備(100),其中該支撐結構(103)係連接至該第一真空處理裝置(101)的一第一壁(104),並連接至該第二真空處理裝置(102)的一第二壁(105),其中該第二壁(105)面向該第一壁(104)。The apparatus (100) of claim 1, wherein the support structure (103) is coupled to a first wall (104) of the first vacuum processing apparatus (101) and connected to the second vacuum A second wall (105) of the processing device (102), wherein the second wall (105) faces the first wall (104). 如申請專利範圍第1項所述之設備(100),其中該第一真空處理裝置(101)係一第一串聯式處理裝置,且其中該第二真空處理裝置(102)係一第二串聯式處理裝置。The apparatus (100) of claim 1, wherein the first vacuum processing device (101) is a first tandem processing device, and wherein the second vacuum processing device (102) is a second serial device Processing device. 如申請專利範圍第1至3項中任一項所述之設備(100),其中該第一真空處理裝置(101)係一第一垂直處理裝置,且其中該第二真空處理裝置(102)係一第二垂直處理裝置。The apparatus (100) of any one of claims 1 to 3, wherein the first vacuum processing apparatus (101) is a first vertical processing apparatus, and wherein the second vacuum processing apparatus (102) A second vertical processing device. 如申請專利範圍第1至3項中任一項所述之設備(100),其中該支撐結構(103)包括一基座架結構(106),該基座架結構(106)支撐該第一真空處理裝置(101)的一第一底壁(104B),並支撐該第二真空處理裝置(102)的一第二底壁(105B)。The apparatus (100) of any one of claims 1 to 3, wherein the support structure (103) includes a base frame structure (106), the base frame structure (106) supporting the first A first bottom wall (104B) of the vacuum processing device (101) supports a second bottom wall (105B) of the second vacuum processing device (102). 如申請專利範圍第4項所述之設備(100),其中該支撐結構(103)包括一基座架結構(106),該基座架結構(106)支撐該第一真空處理裝置(101)的一第一底壁(104B),並支撐該第二真空處理裝置(102)的一第二底壁(105B)。The apparatus (100) of claim 4, wherein the support structure (103) comprises a base frame structure (106), the base frame structure (106) supporting the first vacuum processing device (101) a first bottom wall (104B) and supporting a second bottom wall (105B) of the second vacuum processing device (102). 如申請專利範圍第1至3項中任一項所述之設備(100),其中該支撐結構(103)包括一強化架結構(107),該強化架結構(107)連接至該第一真空處理裝置(101)的一第一背壁(104A),並連接至該第二真空處理裝置(102)的一第二背壁(105A)。The apparatus (100) according to any one of claims 1 to 3, wherein the support structure (103) comprises a reinforcing frame structure (107) connected to the first vacuum A first back wall (104A) of the processing device (101) is coupled to a second back wall (105A) of the second vacuum processing device (102). 如申請專利範圍第4項所述之設備(100),其中該支撐結構(103)包括一強化架結構(107),該強化架結構(107)連接至該第一真空處理裝置(101)的一第一背壁(104A),並連接至該第二真空處理裝置(102)的一第二背壁(105A)。The apparatus (100) of claim 4, wherein the support structure (103) comprises a reinforcing frame structure (107) connected to the first vacuum processing device (101) a first back wall (104A) and connected to a second back wall (105A) of the second vacuum processing device (102). 如申請專利範圍第6項所述之設備(100),其中該支撐結構(103)包括一強化架結構(107),該強化架結構(107)連接至該第一真空處理裝置(101)的一第一背壁(104A),並連接至該第二真空處理裝置(102)的一第二背壁(105A)。The apparatus (100) of claim 6, wherein the support structure (103) comprises a reinforcing frame structure (107) connected to the first vacuum processing device (101) a first back wall (104A) and connected to a second back wall (105A) of the second vacuum processing device (102). 如申請專利範圍第7項所述之設備(100),其中該強化架結構(107)係連接至該基座架結構(106)。The apparatus (100) of claim 7, wherein the stiffener structure (107) is coupled to the base frame structure (106). 如申請專利範圍第8項所述之設備(100),其中該強化架結構(107)係連接至該基座架結構(106)。The apparatus (100) of claim 8 wherein the stiffener structure (107) is coupled to the base frame structure (106). 如申請專利範圍第1至3項中任一項所述之設備(100),其中該第一真空處理裝置(101)和該第二真空處理裝置(102)之間的該大氣空間(108)提供一保養區,該保養區用於提供對該第一真空處理裝置(101)之一第一背側的進出和對該第二真空處理裝置(102)之一第二背側的進出。The apparatus (100) according to any one of claims 1 to 3, wherein the atmospheric space (108) between the first vacuum processing device (101) and the second vacuum processing device (102) A service area is provided for providing access to the first back side of one of the first vacuum processing devices (101) and access to the second back side of one of the second vacuum processing devices (102). 如申請專利範圍第4項所述之設備,其中該第一真空處理裝置(101)和該第二真空處理裝置(102)之間的該大氣空間(108)提供一保養區,該保養區用於提供對該第一真空處理裝置(101)之一第一背側的進出和對該第二真空處理裝置(102)之一第二背側的進出。The apparatus of claim 4, wherein the atmosphere (108) between the first vacuum processing device (101) and the second vacuum processing device (102) provides a maintenance area for the maintenance area Access to the first back side of one of the first vacuum processing devices (101) and access to the second back side of one of the second vacuum processing devices (102) are provided. 如申請專利範圍第1至3項中任一項所述之設備(100),其中該支撐結構(103)係連接至該第一真空處理裝置(101)的一第一真空腔室(110),並連接至該第二真空處理裝置(102)的一第二真空腔室(120),其中該第一真空腔室(110)係相對於該第二真空腔室(120)配置。The apparatus (100) according to any one of claims 1 to 3, wherein the support structure (103) is connected to a first vacuum chamber (110) of the first vacuum processing apparatus (101) And connected to a second vacuum chamber (120) of the second vacuum processing device (102), wherein the first vacuum chamber (110) is configured relative to the second vacuum chamber (120). 如申請專利範圍第14項所述之設備(100),其中該第一真空腔室(110)和該第二真空腔室(120)係選自於由下列選項構成的群組:裝載腔室;處理腔室,沉積腔室;移送腔室;和具有用於產生工業級真空之真空泵的真空腔室。The apparatus (100) of claim 14, wherein the first vacuum chamber (110) and the second vacuum chamber (120) are selected from the group consisting of: a loading chamber a processing chamber, a deposition chamber, a transfer chamber, and a vacuum chamber having a vacuum pump for producing an industrial grade vacuum. 一種用於處理基板的設備(100),包括: 一第一真空處理裝置(101); 一第二真空處理裝置(102);以及 一支撐結構(103),配置在該第一真空處理裝置(101)和該第二真空處理裝置(102)之間的一大氣空間(108)中; 其中該支撐結構(103)包括一基座架結構(106),該基座架結構(106)支撐該第一真空處理裝置(101)之一第一真空腔室(110)的一第一底壁(104B),並支撐該第二真空處理裝置(102)之一第二真空腔室(120)的一第二底壁(105B), 其中該支撐結構(103)包括一強化架結構(107),該強化架結構(107)連接至該第一真空腔室(110)的一第一背壁(104A),並連接至該第二真空腔室(120)的一第二背壁(105A),且 其中該第一真空腔室(110)係相對於該第二真空腔室(120)配置。A device (100) for processing a substrate, comprising: a first vacuum processing device (101); a second vacuum processing device (102); and a support structure (103) disposed in the first vacuum processing device ( 101) and an atmosphere (108) between the second vacuum processing device (102); wherein the support structure (103) includes a pedestal frame structure (106), the pedestal frame structure (106) supporting the a first bottom wall (104B) of the first vacuum chamber (110) of the first vacuum processing device (101) and supporting the second vacuum chamber (120) of one of the second vacuum processing devices (102) a second bottom wall (105B), wherein the support structure (103) includes a reinforcing frame structure (107) connected to a first back wall of the first vacuum chamber (110) ( 104A) is coupled to a second back wall (105A) of the second vacuum chamber (120), and wherein the first vacuum chamber (110) is disposed relative to the second vacuum chamber (120). 一種用於處理基板的處理系統(200),包括: 如申請專利範圍第1至16項中任一項所述之用於處理基板的設備(100);以及 一基板裝載模組(180),用於將基板裝載至用於處理基板的該設備(100)中,該基板裝載模組包括: 一固持裝置(140),用於固持基板;及 一擺動模組(160),用於在一水平方向和一垂直方向之間改變基板方向。A processing system (200) for processing a substrate, comprising: the apparatus (100) for processing a substrate according to any one of claims 1 to 16; and a substrate loading module (180), For loading the substrate into the device (100) for processing a substrate, the substrate loading module comprises: a holding device (140) for holding the substrate; and a swing module (160) for The direction of the substrate is changed between the horizontal direction and a vertical direction. 如申請專利範圍第17項所述之系統(200),其中該固持裝置(140)包括一第一基板固持件和一第二基板固持件,其中該第一基板固持件係至少部分地提供在該第二固持件上方。The system (200) of claim 17, wherein the holding device (140) comprises a first substrate holder and a second substrate holder, wherein the first substrate holder is at least partially provided Above the second holder. 一種用於保養用在處理基板的一設備(100)的方法,該設備(100)包括一第一真空處理裝置(101)和一第二真空處理裝置(102),該第一真空處理裝置(101)和該第二真空處理裝置(102)由共享的一支撐結構(103)所支撐,該方法包括從提供在該支撐結構(103)的一基座架結構上方的一大氣空間(108),保養該第一真空處理裝置(101)和該第二真空處理裝置(102)之中的至少一者。A method for servicing a device (100) for processing a substrate, the device (100) comprising a first vacuum processing device (101) and a second vacuum processing device (102), the first vacuum processing device ( 101) and the second vacuum processing device (102) is supported by a shared support structure (103) including an atmospheric space (108) provided above a pedestal structure of the support structure (103) At least one of the first vacuum processing device (101) and the second vacuum processing device (102) is maintained. 如申請專利範圍第19項所述之方法,其中處理基板的該設備(100)係如申請專利範圍第1至16項中任一項所述之設備。The method of claim 19, wherein the apparatus (100) for processing a substrate is the apparatus of any one of claims 1 to 16.
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