KR20190002415A - Apparatus for processing a substrate, a processing system for processing a substrate, and a method for servicing an apparatus for processing a substrate - Google Patents
Apparatus for processing a substrate, a processing system for processing a substrate, and a method for servicing an apparatus for processing a substrate Download PDFInfo
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- KR20190002415A KR20190002415A KR1020187013641A KR20187013641A KR20190002415A KR 20190002415 A KR20190002415 A KR 20190002415A KR 1020187013641 A KR1020187013641 A KR 1020187013641A KR 20187013641 A KR20187013641 A KR 20187013641A KR 20190002415 A KR20190002415 A KR 20190002415A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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Abstract
An apparatus 100 for processing a substrate is described. The apparatus includes a first vacuum processing arrangement 101 and a second vacuum processing arrangement 102 and an atmospheric space 108 between the first vacuum processing arrangement 101 and the second vacuum processing arrangement 102. The first vacuum processing arrangement 101, And an arrayed support structure 103.
Description
[0001] Embodiments of the present disclosure are directed to an apparatus for processing a substrate, a processing system for processing the substrate, and a method for servicing the apparatus. Embodiments of the present disclosure are particularly directed to a vacuum processing apparatus for processing two or more substrates, for example, a vacuum processing apparatus for manufacturing displays, a processing system configured to vacuum process a substrate for manufacturing display devices, To a method for servicing a vacuum processing apparatus from an atmospheric space provided between the arrangements.
[0002] Techniques for layer deposition on a substrate include, for example, sputter deposition, thermal evaporation, and chemical vapor deposition. The sputter deposition process may be used to deposit a layer of material, such as a conductive material or a layer of insulating material, on a substrate. During the sputter deposition process, a target having a target material to be deposited on the substrate is bombarded with ions generated in the plasma zone, dislodging the atoms of the target material from the surface of the target. The ejected atoms may form a layer of material on the substrate. In a reactive sputter deposition process, the ejected atoms may react with a gas, such as nitrogen or oxygen, in the plasma zone to form an oxide, nitride, or oxynitride of the target material on the substrate.
[0003] Coated materials may be used in some applications and in some technical fields. For example, applications are in the field of microelectronics such as creating semiconductor devices. In addition, substrates for displays are often coated by a sputter deposition process. Additional applications include insulating panels, substrates with TFTs, color filters, and the like.
[0004] For example, in display manufacturing, it is advantageous to reduce manufacturing costs of displays for e.g. mobile phones, tablet computers, television screens, and the like. Reduction of manufacturing costs can be achieved, for example, by increasing the throughput of a vacuum processing system, such as a sputter deposition system. In addition, the footprint can be a related factor to reduce the cost of ownership for the vacuum processing system.
[0005] In view of the foregoing, devices, systems and methods that overcome at least some of the problems in the art are advantageous. The present disclosure is particularly directed to providing devices, systems and methods that provide at least one of increased throughput, reduced footprint of a vacuum processing system, and reduced operational, maintenance and manufacturing costs.
[0006] In view of the foregoing, there is provided an apparatus for processing a substrate, a processing system for processing the substrate, and a method for servicing the apparatus. Further aspects, benefits, and features of the present disclosure are apparent from the claims, the description, and the accompanying drawings.
[0007] According to aspects of the present disclosure, an apparatus for processing a substrate is provided. The apparatus includes a first vacuum processing arrangement, a second vacuum processing arrangement, and a support structure. The support structure is arranged in a waiting space between the first vacuum processing arrangement and the second vacuum processing arrangement.
[0008] According to another aspect of the present disclosure, an apparatus for processing a substrate is provided. The apparatus includes a first vacuum processing arrangement, a second vacuum processing arrangement, and a support structure. The support structure is arranged in a waiting space between the first vacuum processing arrangement and the second vacuum processing arrangement. The support structure also includes a base frame structure that supports a first bottom wall of the first vacuum chamber of the first vacuum processing arrangement. Additionally, the base frame structure of the support structure supports the second lowest wall of the second vacuum chamber of the second vacuum processing arrangement. The support structure also includes a reinforcing frame structure connected to a first back wall of the first vacuum chamber and a second back wall of the second vacuum chamber. The first vacuum chamber is arranged opposite to the second vacuum chamber.
[0009] According to yet another aspect of the present disclosure, a processing system for processing a substrate is provided. The processing system includes an apparatus for processing a substrate, according to any of the embodiments described herein. The processing system also includes a substrate loading module for loading the substrate into the apparatus for processing the substrate. The substrate loading module includes a holding device for holding the substrate, and a swing module for changing the substrate orientation between the horizontal and vertical orientations.
[0010] According to yet another aspect of the present disclosure there is provided a method for servicing an apparatus for processing a substrate comprising a first vacuum processing arrangement supported by a shared support structure and a second vacuum processing arrangement supported by a second support structure, Vacuum processing < / RTI > The method includes servicing a first vacuum processing arrangement and / or a second vacuum processing arrangement from an atmospheric space provided over the base frame structure of the support structure.
[0011] Embodiments also relate to apparatus for performing the disclosed methods, and include apparatus portions for performing each of the described method aspects. These methodological aspects may be performed by hardware components, by a computer programmed by appropriate software, by any combination of the two, or in any other manner. In addition, embodiments in accordance with the present disclosure also relate to methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for performing all of the respective functions of the apparatus.
[0012] In the manner in which the recited features of the present disclosure can be understood in detail, a more particular description of the disclosure briefly summarized above may be made with reference to the embodiments. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings relate to embodiments of the present disclosure and are described below:
Figure 1 shows a schematic side view of an apparatus for processing a substrate, in accordance with embodiments described herein;
Figures 2A-2C illustrate schematic plan views of an apparatus for processing a substrate, in accordance with further embodiments described herein;
Figure 3a shows a schematic perspective view of a processing system according to embodiments described herein;
Figure 3B shows a schematic top view of a processing system according to embodiments described herein; And
4 shows a flow diagram illustrating a method for servicing an apparatus for processing a substrate, in accordance with embodiments described herein.
[0013] Reference will now be made in detail to various embodiments of the present disclosure, and one or more examples of various embodiments are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. Only differences for the individual embodiments are described. Each example is provided in the description of the present disclosure and is not intended as a limitation of the disclosure. Furthermore, features illustrated or described as part of one embodiment may be used in conjunction with other embodiments or with other embodiments to produce yet another additional embodiment. The description is intended to cover such modifications and variations.
[0014] Before various embodiments of the present disclosure are described in further detail, some aspects of some terms and expressions used herein are described.
[0015] In this disclosure, " an apparatus for processing a substrate " can be understood as an apparatus configured to process a substrate as described herein. In particular, an apparatus for processing a substrate can be configured to process a vertical substrate, for example, for display manufacture. More specifically, an apparatus for processing a substrate can be configured to process large area substrates, for example, by depositing one or more layers on a substrate in a vacuum deposition chamber. It should also be noted that, in this disclosure, " an apparatus for processing a substrate " may also be referred to as a " processing apparatus ".
[0016] In this disclosure, the term " substrate " or " large area substrate " as used herein may particularly encompass non-rigid substrates such as glass plates and metal plates. However, the present disclosure is not limited to these, and the term " substrate " may also encompass flexible substrates, such as a web or foil. According to some embodiments, the substrate may be made of any material suitable for material deposition. For example, the substrate may be a glass (e.g., soda-lime glass, borosilicate glass, etc.), metal, polymer, ceramic, compound materials, carbon fiber materials, Mica, or any other material or combination of materials.
[0017]
For example, a " large area substrate " as described herein may have a size of at least 0.01 m 2, specifically at least 0.1 m 2, more specifically at least 0.5 m 2. For example, the large area substrate or carrier may be a GEN 4.5 corresponding to approximately 0.67 m 2 substrates (0.73 m x 0.92 m), a GEN 5 corresponding to approximately 1.4 m 2 substrates (1.1 m x 1.3 m), approximately 4.29 m 2 substrates (2.85 m x 3.05 m) corresponding to GEN 7.5, approximately 5.7 m < 2 > substrates (2.2 m x 2.5 m) Lt; / RTI > Much larger generations, such as GEN 11 and GEN 12, and corresponding substrate areas can similarly be implemented. Thus, the substrate is selected from the group consisting of
[0018] In this disclosure, " vacuum processing arrangement " can be understood as a processing arrangement with one or more vacuum chambers. &Quot; Vacuum chamber " can be understood as a chamber with a vacuum pump to create a technical vacuum. In particular, the vacuum chamber as described herein is understood to be a chamber that can be vacuum evacuated at a sub-atmospheric pressure, for example a pressure of 10 mbar or less, specifically 1 mbar or less. . According to an exemplary arrangement, the vacuum chamber may be a vacuum processing chamber configured to insert process gases into the deposition region in the vacuum processing chamber. For example, process gases may include inert gases such as argon and / or reactive gases such as oxygen, nitrogen, hydrogen and ammonia (NH3), ozone (O3), and the like.
[0019] Thus, the term "vacuum" as used herein can be understood as meaning a technical vacuum having a vacuum pressure of, for example, less than 10 mbar. Typically, the pressure in the vacuum chamber as described herein is in the range of 10 -5 mbar to about 10 -8 mbar, more typically 10 -5 mbar to 10 -7 mbar, even more typically about 10 -6 mbar It can be about 10 -7 mbar. According to some embodiments, the pressure in the vacuum chamber is such that the partial pressure or total pressure of the vaporized material in the vacuum chamber, which may be approximately the same when only the vaporized material is present as the component to be deposited in the vacuum chamber . ≪ / RTI > In some embodiments, the total pressure in the vacuum chamber is in the range of about 10 -4 mbar to about 10 -7 mbar, particularly when there is a second component (such as gas, etc.) in addition to the vaporized material in the vacuum chamber .
[0020] In this disclosure, " support structure " can be understood as a mechanical structure supporting a first vacuum processing arrangement and a second vacuum processing arrangement as described herein. In other words, the support structure may be a shared support structure configured to support the first vacuum processing arrangement and the second vacuum processing arrangement. More specifically, a " support structure " as described herein is a mechanical structure including a shared reinforcement structure provided between a first vacuum processing arrangement and a second vacuum processing arrangement, . In particular, the support structure may be connected to the first rear wall of the first vacuum processing arrangement and to the second rear wall of the second vacuum processing arrangement, so that a shared reinforcement is provided. A " support structure " as described herein can also include a base frame structure that provides a platform structure in which the first vacuum processing arrangement and the second vacuum processing arrangement can be arranged on top. Thus, the base frame structure may be a shared base frame structure that supports both the first vacuum processing arrangement and the second vacuum processing arrangement.
[0021] In the present disclosure, the " atmospheric space " can be understood as the space provided between the first vacuum processing arrangement and the second vacuum processing arrangement, where atmospheric pressure is provided. Typically, the " atmospheric space " includes air, so that a person can use the first vacuum processing arrangement and the second vacuum processing arrangement for service or maintenance of the first vacuum processing arrangement and / or the second vacuum processing arrangement, And can stay in a space provided between the arrangements. Thus, the dimensions of the atmosphere space can be selected such that a person can access the back side of the first vacuum processing arrangement and the rear side of the second vacuum processing arrangement.
[0022]
Figure 1 shows a schematic side view of an
[0023] Thus, in comparison to conventional processing devices, embodiments of the processing device as described herein advantageously provide increased throughput, reduced footprint, and reduced operational, maintenance, and manufacturing costs. In particular, by providing a twin processing device as described herein, the throughput can be increased and the footprint can be reduced. Also, by providing a support structure as described herein, advantageously the rear walls of the first vacuum processing arrangement and the second vacuum processing arrangement can be reinforced in an efficient and space-saving manner.
[0024] More specifically, it may be particularly advantageous to provide a support structure as described herein, since the back walls of each vacuum processing arrangement must withstand atmospheric pressure versus vacuum pressure differential. Because the support structure as described herein provides for the shared enhancement of the first vacuum processing arrangement and the second vacuum processing arrangement, the support structure provides advantages over the constructive, static, and cost aspects Respectively. In particular, the covalent reinforcement reduces weight as compared to individual reinforcement of vacuum processing arrangements.
[0025] Advantageously, the space provided between the first vacuum processing arrangement and the second vacuum processing arrangement, i.e. the distance between the rear walls of the vacuum processing arrangements, provides a service area for servicing the vacuum processing arrangements. Accordingly, embodiments of the processing apparatus as described herein advantageously provide for servicing the first vacuum processing arrangement and / or the second vacuum processing arrangement from the atmospheric space provided on the base frame structure of the support structure.
[0026]
1, supporting
[0027]
According to embodiments that may be combined with any of the other embodiments described herein, the first
[0028] In this disclosure, " vertical processing arrangement " can be understood in that the processing arrangement can be configured to process the substrate in a substantially vertical orientation (substantially vertical = vertical +/- 15 degrees). As used throughout this disclosure, terms such as "vertical direction" or "vertical orientation" are understood to be distinguished from "horizontal direction" or "horizontal orientation".
[0029]
1, supporting
[0030]
According to embodiments that may be combined with any of the other embodiments described herein, the
[0031]
1, according to embodiments that may be combined with any of the other embodiments described herein, a reinforcing
[0032]
According to embodiments that may be combined with any of the other embodiments described herein, a
[0033]
1, according to embodiments that may be combined with any of the other embodiments described herein, the
[0034] Thus, in comparison with conventional processing devices, the embodiments described herein can be used in conjunction with increased throughput, reduced footprint, and reduced operational, maintenance, and manufacturing costs, for example, Processing device.
[0035]
As an example that may be combined with other configurations and embodiments described herein, the
[0036] Figures 2A-2C illustrate schematic plan views of an apparatus for processing a substrate, in accordance with further embodiments described herein. In particular, Figures 2A-2C illustrate examples for different layouts of a processing device as described herein.
[0037]
2A shows a first exemplary embodiment of a processing apparatus having a first
[0038]
2A, the first
[0039]
2A, according to embodiments that may be combined with any of the other embodiments described herein, the first
[0040]
According to a second exemplary embodiment of the processing apparatus, as shown exemplarily in Figure 2B, the
[0041] According to some embodiments that may be combined with other embodiments described herein, the processing apparatus may be configured for stationary layer deposition on a substrate, illustratively shown in Figures 2A and 2B. have. Alternatively, the processing apparatus can be configured for dynamic layer deposition on a substrate, as exemplarily shown in Figure 2C. A dynamic deposition process, such as a sputter deposition process, can be understood as a deposition process in which the substrate is moved through the deposition region along the transport direction while the sputter deposition process is being performed. In other words, the substrate is not static during the sputter deposition process.
[0042] Thus, according to some implementations as illustrated by way of example in FIG. 2C, a processing device with in-line processing arrangement can be configured for dynamic processing, particularly dynamic deposition. In particular, in this disclosure, " in-line processing arrangement " can be understood as an arrangement of two or more vacuum chambers arranged in-line. More specifically, " in-line processing arrangement " as described herein may be configured for the position of one or more layers on a vertical substrate. For example, one or more layers may be deposited in a static or dynamic deposition process. The deposition process may be a PVD process, such as a sputter process, or a CVD process.
[0043]
In particular, in-line processing arrangements configured for dynamic layer deposition provide uniform processing of substrates, such as large area substrates, such as rectangular glass plates. The processing tools, such as one or more deposition sources, may extend predominantly in one direction (e.g., vertical direction) and the substrate may be in a second, different direction (e.g., horizontal directions as exemplarily shown in FIG. (The first conveying
[0044] Devices or systems for dynamic vacuum deposition, such as in-line processing devices or systems, can be operated in one direction, for example, by the ability to move the substrate at a constant rate and stably hold one or more sputter deposition sources Lt; RTI ID = 0.0 > uniformity, e. G., Layer uniformity. ≪ / RTI > The deposition process of an in-line processing apparatus or a dynamic deposition apparatus is determined by the movement of the substrate across one or more deposition sources. In the case of an in-line processing device, the deposition or processing region may be an essentially linear region for processing, for example, a large-area rectangular substrate. The deposition area may be a region where the deposition material is deposited on the substrate or one or more of the deposition sources. In contrast, in the case of a static processing device, the deposition area or processing area will basically correspond to the area of the substrate.
[0045]
In some implementations, a further difference in the in-line processing system, e.g., for dynamic deposition, as compared to the static processing system is that it can be used in other vacuum chambers (e.g., first vacuum processing The load lock chambers of the
[0046]
According to embodiments that may be combined with any of the other embodiments described herein, as exemplarily shown in Figs. 2A-2C, the support structure, particularly the
[0047]
According to some embodiments that may be combined with other embodiments described herein, the
[0048] According to some embodiments that may be combined with other embodiments described herein, substrate carriers are supported in a vacuum processing system using a magnetic levitation system. For example, a magnetic levitation system may include first magnets that support a substrate carrier in a hanging position without mechanical contact. The magnetic levitation system provides floating, i.e., non-contact, support of substrate carriers. Thus, particle generation due to movement of carriers within the apparatus for dynamic deposition can be reduced or avoided. The magnetic levitation system includes first magnets that provide substantially the same force as gravity to the top of the substrate carrier. That is, the substrate carriers hang in a noncontact manner under the first magnets.
[0049]
The magnetic levitation system may also include second magnets that provide translational movement along the transport direction of the substrate carriers. The substrate carrier can be supported by the first magnets in contact with the device without contact and by using the second magnets in the device, for example, in vacuum chambers (e.g., the first load of the first vacuum processing arrangement 101) Between the
[0050]
Referring to FIGS. 3A and 3B illustratively, embodiments of a
[0051]
The
[0052]
For example, the
[0053]
According to embodiments that may be combined with any of the other embodiments described herein, the holding
[0054] In light of the present disclosure, it should be understood that the embodiments of the present disclosure relate to the display industry. For example, displays may be fabricated with processes such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) on large area substrates. For example, TFT displays can be fabricated on large area substrates. Due to the increasing display sizes, especially in the case of horizontal loading of substrates, the size of the vacuum processing system increases. In this disclosure, the clean room area for loading substrates can be reduced in size, i.e., footprint size, because the holders, such as substrate loaders, are stacked vertically to be. The displays may be flat, or smoothly curved or curved portions. For example, glass substrates of various generations can be used for display manufacture.
[0055]
As illustrated illustratively in FIG. 3A, the
[0056]
In this disclosure, " Bernoulli holder " can be understood as a holder configured to provide a pressure, e.g., under-pressure or reduced pressure, between the substrate and the surface for floating of the substrate . In particular, a gap or space through which the gas stream flows can be provided between the surface and the substrate. Thus, the Bernoulli holder provides for floating the substrate based on the Bernoulli effect. More specifically, the Bernoulli holder (or Bernoulli-type holder) supports the substrate without (direct) mechanical contact with the face of the substrate. In particular, the substrate is floated on a gas cushion. That is, the holding
[0057]
According to embodiments of the present disclosure, the holders may be stacked at least partially vertically such that one overlies the other. A carrier, such as an electrostatic chuck (E-chuck), may be provided on the
[0058]
Accordingly, the first holder and the second holder can be moved in the horizontal direction between the frame structure and the
[0059]
The
[0060]
The load lock chambers can be vacuum evacuated. After vacuum evacuation of the load lock chambers, the carriers may be transferred into one or more vacuum chambers of the processing apparatus, as described herein. As shown in Figs. 3A and 3B, two lines can be provided. The first
[0061]
3a and 3b illustrate, in accordance with some embodiments that may be combined with any other embodiment described herein, a
[0062]
3A and 3B, advantageously processing the
[0063]
Illustratively, with reference to the flow diagram shown in FIG. 4, embodiments of a
[0064] In view of the foregoing, it should be appreciated that embodiments such as those described herein advantageously provide increased throughput, reduced footprint, and reduced operational, maintenance, and manufacturing costs. In particular, by providing the twin processing apparatus described herein, the throughput can be increased and the footprint can be reduced. Also, by providing a support structure as described herein, advantageously the rear walls of the first vacuum processing arrangement and the second vacuum processing arrangement can be reinforced in an efficient and space-saving manner. In addition, embodiments as described herein advantageously provide for facilitated servicing of vacuum processing systems, particularly vacuum processing systems having twin processing devices as described herein.
[0065] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, and the scope of the present disclosure is defined in the following claims .
[0066] In particular, this written description is intended to illustrate the present disclosure, including the best mode, and to enable any person skilled in the art to make and use any devices or systems and to perform any included methods To enable the described claimed subject matter to be encompassed, examples are used. While various specific embodiments have been disclosed in the foregoing disclosure, the mutually exclusive features of the embodiments described above may be combined with one another. The patentable scope is defined by the claims, and other examples include equivalent structural elements having structural elements that differ from the literal language of the claims, or they are only non-substantial differences from the words of the claims Is intended to be within the scope of the claims.
Claims (15)
- a first vacuum processing arrangement (101);
- a second vacuum processing arrangement (102); And
- a support structure (103) arranged in an atmospheric space (108) between the first vacuum processing arrangement (101) and the second vacuum processing arrangement (102)
An apparatus (100) for processing a substrate.
The support structure 103 is connected to a first wall 104 of the first vacuum processing arrangement 101 and a second wall 105 of the second vacuum processing arrangement 102 and the second wall 105 ) Of the first wall (104)
An apparatus (100) for processing a substrate.
Wherein the first vacuum processing arrangement (101) is a first in-line processing arrangement and the second vacuum processing arrangement (102) is a second in-line processing arrangement.
An apparatus (100) for processing a substrate.
Wherein the first vacuum processing arrangement (101) is a first vertical processing arrangement and the second vacuum processing arrangement (102) is a second vertical processing arrangement.
An apparatus (100) for processing a substrate.
The support structure 103 is configured to support the first bottom wall 104B of the first vacuum processing arrangement 101 and the second bottom wall 105B of the second vacuum processing arrangement 102, A base frame structure 106,
An apparatus (100) for processing a substrate.
The support structure 103 is connected to a first back wall 104A of the first vacuum processing arrangement 101 and to a second back wall 105A of the second vacuum processing arrangement 102 And a reinforcing frame structure (107)
An apparatus (100) for processing a substrate.
The reinforcing frame structure (107) is connected to the base frame structure (106)
An apparatus (100) for processing a substrate.
The atmosphere space 108 between the first vacuum processing arrangement 101 and the second vacuum processing arrangement 102 may be configured to include a first back side of the first vacuum processing arrangement 101, 2 vacuum processing arrangement 102 to provide a service area for providing access to the second back side of the vacuum processing arrangement 102,
An apparatus (100) for processing a substrate.
The support structure 103 is connected to a first vacuum chamber 110 of the first vacuum processing arrangement 101 and a second vacuum chamber 120 of the second vacuum processing arrangement 102, A vacuum chamber (110) is arranged opposite the second vacuum chamber (120)
An apparatus (100) for processing a substrate.
The first vacuum chamber 110 and the second vacuum chamber 120 may include a load lock chamber; A processing chamber, particularly a deposition chamber; A transfer chamber; And a vacuum chamber having a vacuum pump for generating a technological vacuum.
An apparatus (100) for processing a substrate.
- a first vacuum processing arrangement (101);
- a second vacuum processing arrangement (102); And
- a support structure (103) arranged in a waiting space (108) between said first vacuum processing arrangement (101) and said second vacuum processing arrangement (102)
The support structure 103 supports the first bottom wall 104B of the first vacuum chamber 110 of the first vacuum processing arrangement 101 and the second vacuum wall 104B of the second vacuum processing arrangement 102, And a base frame structure (106) for supporting a second lowest wall (105B) of the chamber (120)
The support structure 103 includes a reinforcing frame structure 107 connected to the first rear wall 104A of the first vacuum chamber 110 and the second rear wall 105A of the second vacuum chamber 120, , And
The first vacuum chamber 110 is arranged opposite to the second vacuum chamber 120,
An apparatus (100) for processing a substrate.
- an apparatus (100) for processing a substrate according to any one of the claims 1 to 11; And
- a substrate loading module (180) for loading a substrate into an apparatus (100) for processing the substrate,
Wherein the substrate loading module comprises:
- a holding device (140) for holding the substrate, and
- a swing module (160) for changing the substrate orientation between a horizontal orientation and a vertical orientation,
A processing system (200) for processing a substrate.
Wherein the holding device (140) comprises a first substrate holder and a second substrate holder, wherein the first substrate holder is at least partially provided on the second holder,
A processing system (200) for processing a substrate.
The apparatus 100 includes a first vacuum processing arrangement 101 and a second vacuum processing arrangement 102 supported by a shared support structure 103,
The method comprises:
Or the second vacuum processing arrangement (102) from the atmospheric space (108) provided on the base frame structure of the support structure (103).
A method for servicing an apparatus (100) for processing a substrate.
An apparatus (100) for processing a substrate, the apparatus according to any one of claims 1 to 11,
A method for servicing an apparatus (100) for processing a substrate.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2017/061728 WO2018210408A1 (en) | 2017-05-16 | 2017-05-16 | Apparatus for processing a substrate, processing system and method therefor |
Publications (1)
Publication Number | Publication Date |
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KR20190002415A true KR20190002415A (en) | 2019-01-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020187013641A KR20190002415A (en) | 2017-05-16 | 2017-05-16 | Apparatus for processing a substrate, a processing system for processing a substrate, and a method for servicing an apparatus for processing a substrate |
Country Status (4)
Country | Link |
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KR (1) | KR20190002415A (en) |
CN (1) | CN109257933A (en) |
TW (1) | TW201910545A (en) |
WO (1) | WO2018210408A1 (en) |
Families Citing this family (2)
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FI128385B (en) * | 2018-12-27 | 2020-04-15 | Mediatalo Volframi Oy | An apparatus and a method for forming conductive patterns on a surface of a substrate plate by a sputtering process |
FI130006B (en) * | 2020-12-02 | 2022-12-15 | Volframi Oy Ltd | An apparatus for forming patterns on a surface of a substrate plate |
Family Cites Families (6)
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JP3732250B2 (en) * | 1995-03-30 | 2006-01-05 | キヤノンアネルバ株式会社 | In-line deposition system |
US8282334B2 (en) * | 2008-08-01 | 2012-10-09 | Picosun Oy | Atomic layer deposition apparatus and loading methods |
US20100162955A1 (en) * | 2008-12-31 | 2010-07-01 | Lawrence Chung-Lai Lei | Systems and methods for substrate processing |
DE102010000447A1 (en) * | 2010-02-17 | 2011-08-18 | Aixtron Ag, 52134 | Coating device and method for operating a coating device with a screen plate |
WO2014075729A1 (en) * | 2012-11-15 | 2014-05-22 | Applied Materials, Inc. | Method and system for maintaining an edge exclusion shield |
WO2015149848A1 (en) * | 2014-04-02 | 2015-10-08 | Applied Materials, Inc. | System for substrate processing, vacuum rotation module for a system for substrate processing and method of operating a substrate processing system |
-
2017
- 2017-05-16 KR KR1020187013641A patent/KR20190002415A/en not_active Application Discontinuation
- 2017-05-16 WO PCT/EP2017/061728 patent/WO2018210408A1/en active Application Filing
- 2017-05-16 CN CN201780015869.5A patent/CN109257933A/en active Pending
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2018
- 2018-04-23 TW TW107113653A patent/TW201910545A/en unknown
Also Published As
Publication number | Publication date |
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WO2018210408A1 (en) | 2018-11-22 |
CN109257933A (en) | 2019-01-22 |
TW201910545A (en) | 2019-03-16 |
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