CN101431038A - 用于多个金属面触点接通的方法和膏体 - Google Patents

用于多个金属面触点接通的方法和膏体 Download PDF

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Publication number
CN101431038A
CN101431038A CNA2008101688371A CN200810168837A CN101431038A CN 101431038 A CN101431038 A CN 101431038A CN A2008101688371 A CNA2008101688371 A CN A2008101688371A CN 200810168837 A CN200810168837 A CN 200810168837A CN 101431038 A CN101431038 A CN 101431038A
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Prior art keywords
silver
lotion
contacting
contact
metal
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CN101431038B (zh
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W·施米特
T·迪克尔
K·施滕格
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Heraeus Deutschland GmbH and Co KG
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WC Heraus GmbH and Co KG
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Priority claimed from DE102008031893A external-priority patent/DE102008031893A1/de
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/34—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material comprising compounds which yield metals when heated
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
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Abstract

本发明涉及用于多个金属面触点接通的方法和膏体。为了制造用于触点接通两个元件的导电或导热的连接，根据本发明由金属化合物(特指银化合物)在接触表面之间将形成自然金属(特别是银)。根据本发明，处理温度可以在使用银焊料时降低到240℃以下，并且处理压力可以下降为正常压力。根据本发明的触点接通膏体具有金属化合物(特别是银化合物)，该银化合物低于400℃时分解而形成自然银。根据本发明实现了从一种化学化合物中原位地生成金属，以用于制造触点，该触点可以在其制造时所需的温度之上应用。

Description

用于多个金属面触点接通的方法和膏体
技术领域
本发明涉及一种触点接通膏体(Kontaktierungspasten)(特指银膏)，用于固定松动的、彼此多层式设置的元器件。
背景技术
对于待连结的电子元件相互间的多层化结构，由在溶剂中离散的银片(Silberflakes)构成的触点接通膏体在数量级为30MPa的压力下且在温度约为300℃时被烧结，以便将约50μm的薄层涂敷在电子元件(芯片)上。在此，促成芯片和基板的可靠的连接，其能承受超过250℃的工作温度。多个待连接的面必须是贵重金属，特别是由银或金制成。
WO 2004/026526公开了一种颗粒大小小于100nm的纳米银的应用，从而将压力降低至约20MPa以及将温度降低至约250℃。
根据US 6,951,666，易于分解的银化合物用于生成丝网印刷，例如与银片或者纳米银银片或者与由银片(Silberflocken)和纳米银(Nanosilber)组成的组合物一起应用。
发明内容
本发明的目的在于，一方面提供一种尽可能在软焊料之上广泛具有熔点的触点接通，另一方面也可以尽可能简单地如利用软焊料制造这种触点接通。这种触点接通可以使得电子元件在扩展至200℃以上可能甚至超过250℃的温度使用范围内简单地固定在基板上，尤其是为此可以降低压力负荷。对此可以提供一种合适的触点接通膏体。
为了实现该目的，多个松动的元件借助于连接膏体广泛地在金属熔点之下通过该熔点实现固定进而相互间全面地固定。
该目的利用独立权利要求的特征来实现。优选的实施例在从属权利要求中进行描述。
根据本发明，为了制造导电连接或导热连接，以用于两个松动的元件的稳定的触点接通，特别是用于电子元件与其他元件的触点接通，金属化合物(特指银化合物)在接触面之间转化为自然金属(特指银)。对此，在元件上的非贵重金属涂镀层，像例如铜金属涂镀层就已经足够用于制造在多个元件之间的固定触点。
在借助用于元件触点接通的导电或者导热的连接使得两个多层式的待连接的电子元件连结到一起时，金属化合物(特指银化合物)分解为自然金属(特指元件的接触面之间的银)的过程中可以实现压力和温度的显著降低，以便元件彼此烧结。为简化操作，多层式的连接可在熔炉中进行，或者借助于加热板，特别是在循环室式干燥柜或具有加热板系统的蓄热式连续加热炉中，或者借助可加热的冲具。
对于本发明来说这是决定性的，即元件的多层式的触点接通彼此间是其机械式的固定，该触点接通优选地额外作为导热使用或者作为导电连接使用。
优选情况如下，
·金属化合物(特指银化合物)是有机的金属化合物，特指银化合物，如碳酸银或氧化银；
·接触面具有在表面中的非贵重金属；
·用于制造银触点的加工温度在400℃以下，特别是在150℃和350℃之间；
·银触点在大气压下进行制造；
·具有银化合物的膏体涂敷在接触面上；
·金属触点是一致的层体。
该膏体优选包括凝胶(根据DE10 2005 053 553 A1所述)和铜颗粒或银颗粒，特别是在0.2μm和5μm之间范围内，特别优选地在0.5μm和2μm之间。
金属化合物(特指银化合物)特别适合于在300℃之下特别是在250℃之下分解进而形成自然金属(尤其是银)，烧结膏体相对于其在200℃和300℃之间的应用范围得到显著地改善。根据本发明提供了一种具有易于分解的银化合物的触点接通膏体。这种根据本发明的膏体可以在低压下，特别是在5bar之下，优选在3bar之下，以及工作温度为约230℃(即在250℃之下，特别是在240℃之下)实现触点接通。
根据本发明的在表面之间的触点接通在超过200℃时是对温度变化稳定的，甚至于在超过2000个周期时都是对温度稳定的。因此，触点接通膏体超过了利用软焊料合金或导电胶所达到的耐温性和稳定稳定性。在本发明的范围内进而可以实现，触点接通膏体的触点接通温度处于利用膏体制造的触点的工作温度之下。这简化了用于制造由多个电子元件组成的多层式模块的方法。根据本发明的易于分解的银化合物可以简单地制造并且比纳米银更易于保存。纳米银在储存时会失去所希望的特性，因为表面通过积聚不断地变小，进而不再适合于连结。
具有决定意义的是，该膏体除了包括其有机组成部分(如溶剂和/或碳酸溶液)之外，还具有易于分解的金属化合物，特别是银化合物，通过其可以如利用软焊料在400℃之下实现加工。优选地，银化合物在300℃之下，特别是在250℃之下形成金属银。合适的银化合物是氧化银、碳酸银且特别是有机银化合物。特别是乳酸银。
可以设想，根据本发明的膏体及方法以原位高活性生成的金属(特指银)的形成为基础，该银彼此连接多个接触面及可能处于膏体中的固体。对此，可能表现出，由分解的金属化合物所形成的金属首先在固体上形成活性的颗粒表面，其稍后被轻易地烧结，或者由金属化合物形成的金属立刻彼此连接成结晶界限。就此而言，对于根据本发明的连接机构而言，主要问题并不在于是否是烧结、粘结或凝结。无论如何，触点位置的机械强度通过金属化合物的分解而得到提高，且降低了多孔性，特别是降低了1至20％。
易于分解的银化合物可以在已知的膏体中，特别是可以与银片或纳米银或银片与纳米银组成的组合物一起使用。在另一优选的实施例中，膏体利用可易于分解的银化合物和铜粉来提供。铜粉的微粒尺寸优选为小于10μm。
通常元件的接触表面是由贵重金属或利用贵重金属层制成的金属涂镀层。此外，根据本发明的膏体适用于连接非贵重金属表面，例如铜表面。
根据本发明，在约230℃时除了银表面在铜表面以及镍金表面上也能烧结具有良好导电性的固定连接。该连接的拉伸负荷约为50MPa。
根据本发明的膏体适用于固定散热体或LED，并且也适合于应用到光电子设备和功率电子设备(Power-Module功率模块)，特别是数据控制块DCB(Data Control Block)及多种附件(Die-Attach)中。
优选地，触点接通膏体是无树脂的。特别是根据DE10 2005 053553 A1的凝胶可以与可易于分解的银化合物混合并且还可以与金属粉，如银片、纳米银或铜粉混合。
根据本发明提供了一种低温烧结技术(NTV)，该技术击败了焊线技术，因为利用根据本发明的烧结膏体则有利于元件双侧的加热。
根据本发明可以实现，膏体取代了借助于调配的丝网印刷及特别是模板印刷或溅射方法来进行涂敷。
附图说明
接下来，本发明将借助实施例并参照附图来详细描述。
图1示出了LED在散热体上的完全固定；
图2示出了电子元件(芯片)在印制导线上的完全固定；
图3示出了DCB在散热体上的完全固定；
图4示出了硅半导体在铜制基板上的固定；
图5示出了半导体(例如硅或砷化镓)与另一半导体(例如硅或砷化镓)的导电、导热和机械的连接(＝叠层)；
图6示出了半导体在金属涂镀层(倒装晶片)上的导电、导热和机械的连接；
图7示出了电子元件与另一电子元件的导电、导热和机械的连接，其中该元件固定在另一元件上(堆叠预装件Package onPackage/PoP)；
图8示出了太阳能电池在基板上或由金属、陶瓷或塑料制成的散热体上的导电、导热和机械的连接。
具体实施方式
触点接通分别在元件的为此设计的金属涂镀层之间实现。这些邻接金属触点的金属涂镀层在附图中没有示出，因为该金属涂镀层在多个银金属涂镀层之间的银触点或在多个铜金属涂镀层之间的铜触点中未能显现。
根据图1的实施例，LED11利用触点接通13固定在散热体12上。
LED11的变热在软焊料触点中会带来由金属间相线形成导致易碎性的危险，进而损害触点的可靠性。
利用由根据DE10 2005 053 553 A1的凝胶构成的根据本发明的触点接通膏体(其中除了银片(Flakes)还分散出乳酸银)制造出纯的银触点，该银触点自然具有最好的导热性，并且在LED的持续温度负荷下没有老化。
为了制造根据图1的LED的固定，由重量百分比为80％的银、重量百分比为5％的乳酸银以及重量百分比为15％的根据DE 10 2005053 553 A1的凝胶制成的膏体完全涂敷在松动的散热体12上。然后松动的LED11安置在膏体上并且把坯件在熔炉中经过45至60分钟加热至230℃。由此而制造的银触点13可能是的最好的热导体，其应用于LED具有不受限制的可靠性。该触点13可以持久地经受更高的温度。
根据图2中的实施例，根据EP 0 809 094 A1的Heraeus SensorTechnology GmbH的高温传感器14利用触点接通13固定在导体框架15上。高温传感器14的高温应用(其应用范围超过500℃)在软焊料触点中有可能会受到在软焊料熔化温度的限制，其中由金属间相线形成导致的易碎性将可能会限制触点的使用寿命。
利用由根据DE10 2005 053 553 A1的凝胶制成的根据本发明的触点接通膏体(其中除了银片(Flakes)还分散出碳酸银)制造出纯的银触点，该银触点自然具有最好的导电性，从而在传感器的应用温度中是绝对可靠的。
为了制造根据图2的芯片触点接通，由重量百分比为80％的银、重量百分比为5％的碳酸银以及重量百分比为15％的根据DE 10 2005053 553 A1的凝胶制成的膏体涂敷在导体框架15上。然后芯片14放置在该膏体上并且坯件在熔炉中经过30至60分钟加热至260至270℃。由此制造的银触点13可能是最好的电导体并且对应用于传感器具有所希望的可靠性。
根据图3的实施例，DCB6利用每一触点接通13与芯片14导电连接地且导热地固定在散热体12上。芯片4的变热在软焊料触点中会带来由金属间相线形成的易碎性的危险，进而损害触点13的有效性。
利用由根据DE10 2005 053 553 A1的凝胶构成的根据本发明的触点接通膏体(其中除了银片(Flakes)还分散出乳酸银)制造出纯的银触点，该银触点自然具有最好的导热性，并且在芯片的持续温度负荷下不会出现老化。
为了制造根据图3的DCB触点，由重量百分比为60％的铜、重量百分比为20％的银、重量百分比为5％的乳酸银以及重量百分比为15％的根据DE 10 2005 053 553 A1的凝胶制成的膏体涂敷在散热体12上。然后，DCB16放置在该膏体上，并且利用由重量百分比为80％的银、重量百分比为5％的乳酸银以及重量百分比为15％的根据DE10 2005 053 553 A1的凝胶制成的膏体镀层，芯片14放置到其上，并且该坯件在熔炉中在均衡压力为2至3bar中以20至40分钟加热至240℃。由此制造的银触点13可能是最好的导体，用于芯片其具有不受限制的可靠性。铜银触点13可以有效地用于非常良好的热传递。
图4示出了利用根据本发明制造的银层3将LED或硅半导体2固定在印制导线1上。该芯片2通过导线带5与印制导线导电连接，该印制导线同样利用银层3来固定。由铜或银制成的印制导线和导线带被证明是有利的，尤其是在绝缘载体基板上固定的印制导线。
利用由根据DE10 2005 053 553 A1的凝胶构成的根据本发明的触点接通膏体(其中除了银片(Flakes)还分散出乳酸银)制造出纯的银触点3，该银触点自然具有最好的导热性，并且在LED或芯片2的持续温度负荷下不会出现老化。
为了制造银触点，循环室式干燥柜或具有加热板系统的蓄热式连续加热炉或者冲具(如倒装压焊机或压焊机)分别以可控制的温度范围在以下的操作条件下加以证明：
在触点接通时的温度曲线：
加热速度≤0.5K/s；
最终温度230—400℃；
加热直至散热的加工时间5—60分钟
炉内气体：空气或氮气(剩余氧气含量>1000ppm)或者惰性气体(剩余氧气含量>1000ppm)或者真空>10mbar(剩余氧气含量>100ppm)
在加热率为0.3K/s以下或者最终温度为200以下时或者加热处理时间5分钟以下或者真空为10mbar以下时不能实现所需的加固，从而不能获得可承载的银层。
最终温度的水平通过元件的温度敏感性来确定。空气大气压是优选的烧结大气压。氮气或惰性气体用于使铜制基板表面不被氧化。特别是在100和300mbar间的真空额外地阻止了空气的包围。
为了制造根据图4的硅芯片的固定，由重量百分比为80％的银、重量百分比为5％的乳酸银以及重量百分比为15％的根据DE 10 2005053 553 A1的凝胶制成的膏体被涂敷在结构为2mm厚且10mm宽的铜制基板1上。然后，将芯片放置在膏体上，并且坯件在熔炉中45至60分钟并加热至230℃。由此制造的银触点3可能是最好的热导体，其用于芯片具有不受限的可靠性。触点3可以持久地经受比230℃高得多的温度。
利用由根据DE10 2005 053 553 A1的凝胶制成的根据本发明的触点接通膏体(其中除了银片和铜片还分散出乳酸银)制造纯的金属触点用于芯片与DCB的触点接通，该金属触点具有非常良好的导热性并且在功率模块的持续温度负荷没有出现老化。特别是由于在使用DCB中较高的电流密度，该触点与纯银触点相比更为适合。
类似于根据图4的实例，根据图2、3、4和5的实例，利用根据DE10 2005 053 553 A1的凝胶制成的根据本发明的触点接通膏体(其中除了银片(Flakes)还分散出碳酸银)制造出纯的银触点，该银触点还具有最好的导电性，并且在传感器的所应用的温度中是绝对可靠的。
类似于图4，为了制造根据图6至8的芯片触点接通，由重量百分比为80％的银、重量百分比为5％的碳酸银以及根据DE 10 2005 053553 A1的重量百分比为15％的凝胶制成的膏体涂敷在导体框架1上，该导体框架同样固定在绝缘的基板4上。然后将芯片2放置在膏体上，并且坯件在熔炉中经过30至60分钟加温至260℃至270℃。由此制造的银触点3可能是最好的电导体，其用于传感器具有所希望的可靠性。
利用由根据DE10 2005 053 553 A1的凝胶制成的根据本发明的触点接通膏体(其中除了银片(Flakes)还分散出乳酸银)制造纯的金属触点，用于银导线带与芯片触点接通，该金属触点自然具有非常良好的导电性，并且在芯片的持续温度负荷下没有出现老化。
类似于图4，银触点3在图6至8中以3a标注用作完全的热传递触点，并且以3b标注用作导电触点。
图5示出了半导体(例如硅或砷化镓)与另一半导体(例如硅或砷化镓)(＝叠层)的导电、导热和机械的连接。该示意图不仅适于其前端彼此连接的半导体，也适于其中元件的后侧(后端)与另一元件的上侧(前端)的连接。
根据图6，半导体2的前端通过由Cu、Ag或Au制成的凸焊点6利用银触点3b固定在金属涂镀层上，其中该金属涂镀层与铜制导线1连接(倒装芯片)。
在图7中示出了根据图1的电子元件与根据图1的另一电子元件导电、导热和机械的连接3，其中一个元件固定在另一元件上(预装件堆叠/PoP)。该元件根据本发明再不用在制造单个元件后彼此连接，而是在制造元件的银触点3时就已经制造出用于元件彼此固定的银触点3。
在图8中示出了将太阳能电池8在基板上或由金属、陶瓷或塑料制成的散热体9上的导电、导热及机械的连接3a。太阳能电池8的散热对于其功率和使用寿命来说是非常重要的，因为太阳能电池8的工作温度会完全超过银触点3a的制造温度，太阳能电池8利用该银触点固定在散热体9上。
特别是在太阳能电池中，电元件与其他相同功能性或电气功能性或电子功能性的元件的可靠的导电、导热及机械的连接3是必要的。多个串接设置的太阳能电池8通过银触点3b以及银或铜导线带连接至金属触点，以便引导在太阳能电池8中产生的电流。

Claims (15)

1.一种方法，用于制造两个元件触点接通的导电或导热的连接，其特征在于，由银化合物在彼此形成的接触面之间形成自然银。
2.根据权利要求1所述的方法，其特征在于，所述银化合物是有机的银化合物或碳酸银。
3.根据权利要求1或2所述的方法，其特征在于，所述接触面在表面中具有非贵重金属。
4.根据权利要求1至3中任一项所述的方法，其特征在于，用于制造触点接通的处理温度处于400℃之下。
5.根据权利要求1至4中任一项所述的方法，其特征在于，具有所述银化合物的膏体被涂敷在接触面上。
6.尤其是根据权利要求1至5中任一项所述的方法，用于在电子元件的金属连接面和另一元件的金属连接面之间制造完全的金属触点，用于在低于400℃的温度时相互间固定元件，其特征在于，通过金属或组合物的化合物在低于400℃时从中分解出金属或组合物而制造出由一种金属形成的金属触点，所述金属在温度超过400℃时才会熔化。
7.根据权利要求1至6中任一项所述的方法，其特征在于，两个元件的触点接通用于：
a)固定散热体或LED或DCB或太阳能电池；或者
b)将硅半导体固定在铜制基板上；或者
c)固定倒装芯片或者堆叠预装件(PoP)。
8.一种触点接通膏体，包含有在有机物中的固体，其特征在于，所述触点接通膏体具有凝胶和银化合物，所述银化合物在低于400℃时分解而形成自然银。
9.根据权利要求8所述的触点接通膏体，其特征在于，所述触点接通膏体具有银颗粒或铜颗粒。
10.根据权利要求8或9的触点接通膏体的用于连接电子元件的应用方法，其特征在于，待连接面由非贵重金属制成。
11.根据权利要求8或9的用于触点接通的膏体的应用方法，所述膏体在压力直至5bar或处理温度低于240℃时，或者压力直至5bar且在处理温度低于240℃时使用。
12.根据权利要求10或11的应用方法，在功率电子设备和光电子设备的领域中用于低压触点接通，或者用于固定LED或散热体。
13.一种应用方法，通过铜粉和一种在低于400℃分解的金属化合物在膏体中混合，用于元件与电子模块的低压触点接通。
14.一种化合物的应用方法，在低于制造触点接通时触点的最大使用温度时，所述化合物用于在两个物体相对于一个模块的两个金属面之间生成用作金属的触点接通的金属。
15.一种触点接通膏体的应用方法，包含有一种在400℃下分解的金属化合物的所述触点接通膏体用于将松动的元件完全地固定在松动的电气元件上。
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CN107743425B (zh) * 2015-09-04 2019-05-28 贺利氏德国有限两合公司 金属胶及其用于连接组件的方法
US11045910B2 (en) 2015-09-04 2021-06-29 Heraeus Deutschland GmbH & Co. KG Metal paste and use thereof for joining components
CN115536422A (zh) * 2021-06-29 2022-12-30 贺利氏德国有限两合公司 用于产生金属-陶瓷基板的方法

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