CN101418439A - 激光加工装置以及激光加工方法 - Google Patents
激光加工装置以及激光加工方法 Download PDFInfo
- Publication number
- CN101418439A CN101418439A CNA2008101694423A CN200810169442A CN101418439A CN 101418439 A CN101418439 A CN 101418439A CN A2008101694423 A CNA2008101694423 A CN A2008101694423A CN 200810169442 A CN200810169442 A CN 200810169442A CN 101418439 A CN101418439 A CN 101418439A
- Authority
- CN
- China
- Prior art keywords
- laser
- slit
- condition
- shape
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003672 processing method Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000003287 optical effect Effects 0.000 claims abstract description 7
- 238000009826 distribution Methods 0.000 claims description 66
- 230000008569 process Effects 0.000 claims description 27
- 238000003384 imaging method Methods 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 11
- 238000010926 purge Methods 0.000 claims description 8
- 238000001182 laser chemical vapour deposition Methods 0.000 abstract description 14
- 230000007547 defect Effects 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 36
- 230000002950 deficient Effects 0.000 description 24
- 239000007789 gas Substances 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000000875 corresponding effect Effects 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004606 Fillers/Extenders Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Laser Beam Processing (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007274517A JP5481715B2 (ja) | 2007-10-22 | 2007-10-22 | レーザ加工装置及びレーザ加工方法 |
JP274517/07 | 2007-10-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101418439A true CN101418439A (zh) | 2009-04-29 |
CN101418439B CN101418439B (zh) | 2010-12-15 |
Family
ID=40629435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101694423A Expired - Fee Related CN101418439B (zh) | 2007-10-22 | 2008-10-22 | 激光加工装置以及激光加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5481715B2 (zh) |
KR (1) | KR101050341B1 (zh) |
CN (1) | CN101418439B (zh) |
TW (1) | TWI376749B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103290391A (zh) * | 2012-02-29 | 2013-09-11 | 欧姆龙株式会社 | 激光加工装置 |
CN104011491A (zh) * | 2011-12-02 | 2014-08-27 | 独立行政法人产业技术综合研究所 | 聚光镜加热炉 |
CN111107962A (zh) * | 2018-02-12 | 2020-05-05 | 株式会社Lg化学 | 点焊夹具 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5853336B2 (ja) * | 2012-02-27 | 2016-02-09 | 株式会社ブイ・テクノロジー | レーザ加工装置およびレーザ加工方法 |
CN105759522B (zh) * | 2016-05-11 | 2019-01-22 | 深圳市华星光电技术有限公司 | Tft基板的断线修复方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03203237A (ja) * | 1989-12-28 | 1991-09-04 | Toshiba Corp | レーザ成膜装置およびレーザ成膜方法 |
CN2152808Y (zh) * | 1992-12-25 | 1994-01-12 | 中国科学院金属研究所 | 激光气相合成薄膜和超细粉的装置 |
WO1996007122A1 (fr) * | 1994-08-30 | 1996-03-07 | Hitachi, Ltd. | Procede pour la production d'un dispositif d'affichage a cristaux liquide du type a matrice active |
JP2000347385A (ja) | 1999-06-03 | 2000-12-15 | Nec Corp | レーザリペア装置とフォトマスクの修正方法 |
JP3860444B2 (ja) * | 2001-08-28 | 2006-12-20 | 住友重機械工業株式会社 | シリコン結晶化方法とレーザアニール装置 |
JP4245850B2 (ja) * | 2002-03-19 | 2009-04-02 | シャープ株式会社 | 電子装置の製造方法 |
WO2003081329A1 (fr) * | 2002-03-26 | 2003-10-02 | Tfpd Corporation | Substrat en reseau et procede de fabrication |
JP4334308B2 (ja) * | 2003-09-24 | 2009-09-30 | オムロンレーザーフロント株式会社 | 配線修正装置 |
KR101152555B1 (ko) * | 2005-06-29 | 2012-06-01 | 엘지전자 주식회사 | 액정패널의 리페어패턴 형성장치 및 방법 |
JP4947933B2 (ja) * | 2005-07-26 | 2012-06-06 | オリンパス株式会社 | レーザリペア装置 |
JP5166693B2 (ja) * | 2005-11-04 | 2013-03-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2007
- 2007-10-22 JP JP2007274517A patent/JP5481715B2/ja active Active
-
2008
- 2008-10-10 KR KR1020080099532A patent/KR101050341B1/ko active IP Right Grant
- 2008-10-21 TW TW097140241A patent/TWI376749B/zh not_active IP Right Cessation
- 2008-10-22 CN CN2008101694423A patent/CN101418439B/zh not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104011491A (zh) * | 2011-12-02 | 2014-08-27 | 独立行政法人产业技术综合研究所 | 聚光镜加热炉 |
CN103290391A (zh) * | 2012-02-29 | 2013-09-11 | 欧姆龙株式会社 | 激光加工装置 |
CN103290391B (zh) * | 2012-02-29 | 2015-09-16 | 株式会社V技术 | 激光加工装置 |
CN111107962A (zh) * | 2018-02-12 | 2020-05-05 | 株式会社Lg化学 | 点焊夹具 |
US11383331B2 (en) | 2018-02-12 | 2022-07-12 | Lg Energy Solution, Ltd. | Jig for spot welding |
Also Published As
Publication number | Publication date |
---|---|
KR101050341B1 (ko) | 2011-07-19 |
KR20090040843A (ko) | 2009-04-27 |
JP2009105168A (ja) | 2009-05-14 |
CN101418439B (zh) | 2010-12-15 |
TW200929369A (en) | 2009-07-01 |
JP5481715B2 (ja) | 2014-04-23 |
TWI376749B (en) | 2012-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101418439B (zh) | 激光加工装置以及激光加工方法 | |
JP2622573B2 (ja) | マーク検知装置及び方法 | |
CN1078738C (zh) | 复合式绝缘体上硅薄膜基片及其制作方法 | |
US6529274B1 (en) | System for processing semiconductor products | |
US6727125B2 (en) | Multi-pattern shadow mask system and method for laser annealing | |
CN111554591A (zh) | 半导体芯片处理装置 | |
JPH11340120A (ja) | 裏面アライメント機能を備えた露光装置 | |
US6803292B2 (en) | Method for manufacturing a semiconductor device and semiconductor device with overlay mark | |
US20080045042A1 (en) | Method for crystalizing amorphous silicon layer and mask therefor | |
JPH0729803A (ja) | 走査型露光装置及び該装置を用いてデバイスを製造する方法 | |
KR100551402B1 (ko) | 노광장치의 파라미터값을 최적화하는 방법과 시스템 및노광장치와 노광방법 | |
JP2004317975A (ja) | フォトマスク及びこのフォトマスクを用いた半導体装置の製造方法 | |
US6671048B1 (en) | Method for determining wafer misalignment using a pattern on a fine alignment target | |
US20060232777A1 (en) | Method and system for automatic target finding | |
US7128427B2 (en) | Method and apparatus for fluid handling in immersion lithography | |
US6559072B2 (en) | Develop processing method of a resist surface of a substrate for reduced processing time and reduced defect density | |
JP5002704B2 (ja) | 投影露光装置、投影露光方法、及び半導体装置の製造方法 | |
US20240112910A1 (en) | Laser annealing apparatus, laser annealing method, and method for manufacturing semiconductor device | |
JP2001223157A (ja) | 投影露光装置、投影露光方法、及び半導体装置の製造方法 | |
JP3149526B2 (ja) | 配線形成方法 | |
KR200357058Y1 (ko) | 다수의 정렬표식들을 동시에 관측가능하고 또한 광축을 조절할 수 있는 현미경시스템 | |
JPH0354814A (ja) | 半導体装置の製造法 | |
JPH02222519A (ja) | 連続的なマスクに対する未完成半導体集積回路の微細構造のアライメントをガイドする基準マーク構造 | |
JPH1027738A (ja) | 走査型露光方法および該方法を用いたデバイス製造方法 | |
JP2010090471A (ja) | レーザ加工装置及び方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: OMRON LASER ADVANCED CO., LTD. Free format text: FORMER OWNER: OMRON CORPORATION Effective date: 20131010 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20131010 Address after: Kanagawa Patentee after: OMRON laser advanced Corporation Address before: Kyoto Japan Patentee before: Omron Corporation |
|
ASS | Succession or assignment of patent right |
Owner name: TECHNOLOGY CO. LTD V. Free format text: FORMER OWNER: OMRON LASER ADVANCED CO., LTD. Effective date: 20140208 |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140208 Address after: Kanagawa Patentee after: Technology Co. Ltd V. Address before: Kanagawa Patentee before: OMRON laser advanced Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101215 Termination date: 20201022 |
|
CF01 | Termination of patent right due to non-payment of annual fee |