1376749 九、發明說明： ' 【發明所屬之技術領域】 • 本發明係關於雷射加工裝置及雷射加工方法。 【先前技術】 作爲修正形成於基板上之配線的斷線部等之所謂配線 缺陷的方法，已知一種根據雷射C V D ( C h e m i c a 1 V a ρ 〇 r D e p o s i t i ο n ;化學氣相沉積法）法之加工方法（例如，專利文 獻1)。這是一種藉由採用雷射CVD法，在斷線部或繞過此 • 斷線部之旁支通路的路徑上堆積導電性之膜，以電性連接 配線之斷線部的方法。 第6(a)、（b)圖顯示相關之雷射加工裝置的構成。在第 6 (a)圖所示雷射加工裝置中，沿雷射光8之光路依序配置 細縫9、中繼透鏡11、物鏡12、氣窗14及作爲被加工物 之基板1 5。 其次，顯示第6(a)圖之雷射加工裝置的配線缺陷之修 正方法如下。由擴張器（未圖示）所擴大後之雷射光8，係藉 ® 由具有矩形開口部9a之細縫9，而割射出矩形之雷射光1 0 。如第6(b)圖所示，細縫9係具有可朝圖之X方向移動的 齒27a、27b及可朝圖之Y方向移動的齒28a、28b。又，在 : 第6(b)圖中，有關上述以外之細縫9的構成物，省略圖示。 被割射出之雷射光10係藉由中繼透鏡11及物鏡12, 成像出而預定尺寸之矩形的影像13。另外，將雷射CVD 法之原料氣體，從設於物鏡12下方之氣窗14供給於基板 15。藉此，利用配合影像13之形狀而於露出面形成導電膜 1376749 (發明效果） 根據本發明，藉由使用具有依被加工物之配線圖案而 預先設定的修正形狀之細縫，改變加工條件而以其修正形 狀一次性地形成導電膜。藉此，可保持加工品質，並與習 知構成比較可大幅地縮短配線之斷線部的修正加工時間。 本發明具有以下之特徵。本發明之雷射加工裝置，係 以預先配合配線圖案而設之細縫狀遮罩來規定雷射光的形 狀。然後，使形狀被規定之雷射光成像於例如形成於基板 上之配線的斷線部（斷線等之配線缺陷等），利用雷射化學 氣相沉積法進行斷線部之修正。藉此，與一面掃描成像爲 矩，形之光束一面以所需形狀進行修正的方法比較，可大幅 縮短修正加工時間。 在此情況時，亦可具備細縫轉換手段，係使遮罩移動 以轉換細縫之形狀。 另外，細縫形狀亦可至少包含直線形狀及繞過該斷線 部而進行連接之形狀。迂迴形狀可設成例如π字形等。 又，細縫形狀亦可更包含在基板上進行辨識之預定的 標記形狀。藉此，在配線修正以外，例如可朝基板上進行 打印。 又，以清潔氣體局部地封住雷射CVD法之原料氣體的 所謂氣體簾幕方式進行雷射CVD法，藉此，可高效率地進 行加工》 【實施方式】 以下，參照附加圖式具體說明本發明之實施形態。第 1376749 視圖 立體 造步 的配 中， 、物 線缺 在第 形之 狀的 例如 由轉 換所 於基 ，亦 清潔 1 5 » 工部 斷線 1(a)圖爲顯示本實施形態之雷射加工裝置的構成之剖 ' ’第1(b)圖爲顯示用於該雷射加工裝置之細縫遮罩的 * 圖。又，本發明雖可由例如半導體製造步驟及液晶製 驟所實施*但在本說明書中，係針對液晶製造步驟中 線缺陷之修正進行說明。 如第1(a)圖所示，在本實施形態之雷射加工裝置 沿雷射光8之光路依序配置細縫遮罩20、中繼透鏡11 鏡12、氣窗14及作爲被加工物之基板15。 • 如第1(b)圖所示，細縫遮罩20係形成具有配合配 陷（斷線部）之修正加工部的形狀之圖案形狀的細縫》 1(b)圖中，雖形成有直線狀之直線形狀細縫23及η字 迂迴形狀細縫24，但亦可形成此等形狀以外之各種形 細縫。細縫遮罩2 0係可由例如金屬及玻璃等所構成， 亦可爲包含反射鏡等之構成。另外，細縫遮罩20可藉 換機構21而移動於圖面中之XY平面上》藉此，可轉 照射雷射光8之細縫形狀。 ® 中繼透鏡11及物鏡12係共同構成使雷射光成像 板15上用之光學系。除第1(a)圖所示構成以外，例如 可於光路上追加其他之透鏡。 氣窗14係配置爲使具有CVD原料氣體吹出口、 氣體吹出口及氣體吸入口（均未圖示）之面靠近於基板 藉此，如後述，在修正加工時，可於基板15之修正加 的周圍形成所謂氣體簾幕。 在基板15上形成有液晶裝置的配線，此配線中之 1376749 等的缺陷，係藉由採用本發明之雷射加工裝置的雷射CVD ' 法所修正。爲了將修正加工部之位置對準於雷射光8的光 • 路，基板15係在XY作業台（未圖示）上被載置成與圖面之 XY平面平行，並可藉由此XY作業台而於圖面之X方向或 Y方向移動。又，亦可利用使雷射照射系（雷射光8、細縫 遮罩20、雷射光8、中繼透鏡11、物鏡12、氣窗14)移動 ，而使雷射光8之光路對準於基板15之修正加工部。 其次，說明本實施形態之動作。首先，藉由使ΧΥ作 • 業台作動，使基板15上之修正加工部移動於雷射光8之光 路上。然後，配合修正加工部之形狀，從細縫遮罩2 0所具 有之細縫形狀的圖案中選擇適當的圖案，使藉由轉換機構 21所選擇之圖案移動至雷射光8之光路上。 接著，在修正加工部之周圍形成所謂氣體簾幕。氣體 簾幕之形成方法，例如，於日本特開2003-347242號公報 中已有揭示。在本實施形態中，從氣窗14之設於基板15 側的面之原料氣體吹出口，以被覆修正加工部的方式供給 • CVD之原料氣體。然後，從清潔氣體吹出口將用以封住CVD 原料氣體的清潔氣體供給於其周圍。清潔氣體係使用例如 氮氣。又，從設於由清潔氣體所封住之CVD原料氣體的外 圍（清潔氣體）側之位置之氣體吸入口，吸引CVD原料氣體 及清潔氣體。藉此，被覆修正加工部之CVD原料氣體被封 入在由氣窗Η、基板15及清潔氣體（氣體簾幕）所構成之空 間內。又，亦可在基板15及細縫遮罩20的移動之前，進 行氣體簾幕的形成。 -10- 1376749 在形成氣體簾幕之後，利用照射藉由擴張器（未圖示） ' 所放大後之雷射光8，藉由雷射CVD法而於修正加工部堆 • 積導電性之膜。此時，中繼透鏡11及物鏡12之光學系， 係使通過細縫遮罩20之細縫部的雷射光8於基板15上成 像出預定尺寸之影像13。此影像13之形狀成爲與預先選 擇的細縫遮罩20之細縫形狀相似的形狀。成像出影像13 之修正加工部，例如，可設成第2(a)圖所示之直線狀之直 線配線6、或是第2(b)圖所示之3字形之迂迴配線7等的 φ 形狀。又，在第2(a)、（b)圖中，爲了簡化圖示，省略修正 加工部以外之配線等的顯示。 第2(a)、（b)圖所示之形狀的修正配線，係形成,於例如 第3(a)圖所示之配線上。第3(a)圖爲顯示於基板上形成資 料線1、閘極線2及作爲TFT(Thin Film Transistor:薄膜 電晶體）之電晶體3的配線構造之俯視圖。如第3 (a)圖所示 ，在基板15上呈格子狀地配置有構成液晶配線圖案之資料 線1及閘極線2。另外，在閘極線2上形成有複數個電晶 ® 體3。在第3(a)圖中殘留有配線缺陷，其類似在配線形成 步驟中所產生之斷線缺陷4、及在電晶體3之形成步驟中 因蝕刻等而產生的屬斷線部的圖案形狀缺陷5。在修正加 工此等之配線缺陷的情況，如第3(b)圖所示，於第3(a)圖 之斷線缺陷4之位置形成直線配線6。另外，於第3 (a)圖 之圖案形狀缺陷5之位置形成迂迴配線7。 第4(a)圖爲第3(b)圖所示之A-A線之剖視圖，第4(b) 圖爲第3(b)圖所示之B-B線之剖視圖，第3(c)圖爲第3(b) 1376749 圖所示之C-C線之剖視圖。在本實施形態中，如第4(a)圖 所示，以連接形成於基板15上之資料線1的斷線部之方式 ，從基板15側依序形成第1直線配線6a及第2直線配線 6b。第1直線配線6a及第2直線配線6b均爲導電性之膜 。另外，如第4(b)、（c)圖所示，以連接資料線1的圖案形 狀缺陷（斷線部）之方式’從基板側依序形成第1迂迴配 線7a及第2迂迴配線7b。第1迂迴配線7a及第2迂迴配 線7b亦均爲導電性之膜。如第4(c)圖所示，在跨越閘極線 2之部位’且在形成第1迂迴配線7a之前，於閘極線2上 形成絕緣膜25。藉由形成如以上之修正配線，以修正類似 斷線缺陷4及圖案形狀缺陷5之配線缺陷。又，有關形成 有如上述之2層構造的修正配線之理由，容待後述。 如以上之說明，藉由本實施形態之構成，可依照預先 設定之修正加工部的形狀圖案，利用雷射CVD法一次性地 形成導電性之膜。藉此，可大幅縮短修正加工時間，而實 現高速化。1376749 IX. Description of the invention: 'Technical field to which the invention pertains>> The present invention relates to a laser processing apparatus and a laser processing method. [Prior Art] As a method of correcting a so-called wiring defect such as a broken portion of a wiring formed on a substrate, a laser CVD method is known (C hemica 1 V a ρ 〇r D epositi ο n; chemical vapor deposition method) The processing method of the method (for example, Patent Document 1). This is a method in which a conductive film is deposited on a disconnection portion or a path bypassing the bypass path of the disconnection portion by a laser CVD method to electrically connect the disconnection portion of the wiring. Figures 6(a) and (b) show the construction of the related laser processing apparatus. In the laser processing apparatus shown in Fig. 6(a), the slit 9, the relay lens 11, the objective lens 12, the louver 14, and the substrate 15 as a workpiece are sequentially arranged along the optical path of the laser light 8. Next, the method of correcting the wiring defects of the laser processing apparatus shown in Fig. 6(a) is as follows. The laser light 8 expanded by the dilator (not shown) is cut from the rectangular laser light 10 by the slit 9 having the rectangular opening portion 9a. As shown in Fig. 6(b), the slit 9 has teeth 27a and 27b which are movable in the X direction of the drawing, and teeth 28a and 28b which are movable in the Y direction of the drawing. In addition, in the 6th (b) figure, the structure of the slit 9 other than the above is abbreviate|omitted. The laser light 10 that is cut out is imaged by a relay lens 11 and an objective lens 12 to form a rectangular image 13 of a predetermined size. Further, the material gas of the laser CVD method is supplied to the substrate 15 from the louver 14 provided under the objective lens 12. Thus, the conductive film 1376749 is formed on the exposed surface by the shape of the image 13 (Invention Effect) According to the present invention, the processing conditions are changed by using a slit having a correction shape set in advance according to the wiring pattern of the workpiece. The conductive film is formed at one time in its corrected shape. Thereby, the processing quality can be maintained, and the correction processing time of the disconnection portion of the wiring can be greatly shortened as compared with the conventional configuration. The present invention has the following features. In the laser processing apparatus of the present invention, the shape of the laser light is defined by a slit-like mask provided in advance with the wiring pattern. Then, the predetermined laser light is imaged on the disconnection portion of the wiring formed on the substrate (such as a wiring defect such as a disconnection), and the disconnection portion is corrected by a laser chemical vapor deposition method. Thereby, the correction processing time can be greatly shortened by comparing the method in which the scanning beam is scanned as a moment and the shaped beam is corrected in a desired shape. In this case, a slit conversion means may be provided to move the mask to change the shape of the slit. Further, the slit shape may include at least a linear shape and a shape that is connected by bypassing the broken portion. The meandering shape can be set to, for example, a π shape or the like. Further, the slit shape may further include a predetermined mark shape for identification on the substrate. Thereby, in addition to the wiring correction, for example, printing can be performed on the substrate. In addition, the laser CVD method is performed by a so-called gas curtain method in which the cleaning gas partially seals the material gas of the laser CVD method, whereby the processing can be performed efficiently. [Embodiment] Hereinafter, specific drawings will be specifically described with reference to additional drawings. Embodiments of the invention. In the matching of the 1376749 view three-dimensional step, the object line is missing in the shape of the first shape, for example, by the conversion, and is also cleaned. 1 5 » The broken part of the part 1 (a) is a laser processing showing the embodiment. Fig. 1(b) is a view showing a slit mask used in the laser processing apparatus. Further, the present invention can be implemented, for example, by a semiconductor manufacturing step and a liquid crystal manufacturing process. However, in the present specification, the correction of the line defect in the liquid crystal manufacturing step will be described. As shown in Fig. 1(a), in the laser processing apparatus of the present embodiment, the slit mask 20, the relay lens 11 mirror 12, the louver 14, and the substrate as the workpiece are sequentially arranged along the optical path of the laser light 8. 15. • As shown in Fig. 1(b), the slit mask 20 is formed into a slit having a pattern shape that matches the shape of the correction processing portion (the broken portion). The straight linear slit 23 and the n-shaped rounded slit 24 are formed, but various slits other than these shapes may be formed. The slit mask 20 may be made of, for example, metal or glass, or may be configured to include a mirror or the like. Further, the slit mask 20 can be moved by the mechanism 21 in the XY plane in the drawing surface, whereby the slit shape of the laser light 8 can be irradiated. The relay lens 11 and the objective lens 12 together constitute an optical system for use on the laser light imaging plate 15. In addition to the configuration shown in Fig. 1(a), for example, another lens may be added to the optical path. The gas window 14 is disposed such that the surface having the CVD material gas outlet, the gas outlet, and the gas inlet (none of which is shown) is close to the substrate, and as described later, the correction can be applied to the substrate 15 during the correction processing. A so-called gas curtain is formed around it. A wiring of a liquid crystal device is formed on the substrate 15, and defects such as 1376749 in the wiring are corrected by a laser CVD method using the laser processing apparatus of the present invention. In order to align the position of the correction processing portion with the light path of the laser beam 8, the substrate 15 is placed on the XY table (not shown) so as to be parallel to the XY plane of the drawing surface, and the XY operation can be performed by this. The table moves in the X direction or the Y direction of the drawing. Further, the laser irradiation system (the laser beam 8, the slit mask 20, the laser beam 8, the relay lens 11, the objective lens 12, and the louver 14) can be moved to align the optical path of the laser light 8 to the substrate 15. Correction processing department. Next, the operation of this embodiment will be described. First, the correction processing portion on the substrate 15 is moved on the optical path of the laser light 8 by operating the operation table. Then, in accordance with the shape of the corrected processed portion, an appropriate pattern is selected from the pattern of the slit shape of the slit mask 20, and the pattern selected by the switching mechanism 21 is moved to the optical path of the laser light 8. Next, a so-called gas curtain is formed around the correction processing portion. A method of forming a gas curtain is disclosed, for example, in Japanese Laid-Open Patent Publication No. 2003-347242. In the present embodiment, the source gas of the CVD is supplied from the material gas blowing port of the surface of the louver 14 provided on the substrate 15 side so as to cover the correction processing portion. Then, a cleaning gas for sealing the CVD material gas is supplied from the cleaning gas outlet port. The clean gas system uses, for example, nitrogen. Further, the CVD material gas and the cleaning gas are sucked from the gas suction port provided at the position on the outer (cleaning gas) side of the CVD material gas sealed by the cleaning gas. Thereby, the CVD material gas of the coating correction processing portion is sealed in the space formed by the gas window Η, the substrate 15 and the cleaning gas (gas curtain). Further, the formation of the gas curtain can be performed before the movement of the substrate 15 and the slit mask 20. -10- 1376749 After the gas curtain is formed, a conductive film is deposited in the correction processing portion by laser CVD by irradiating the laser light 8 amplified by a dilator (not shown). At this time, the optical system of the relay lens 11 and the objective lens 12 causes the laser light 8 passing through the slit portion of the slit mask 20 to image the image 13 of a predetermined size on the substrate 15. The shape of this image 13 is a shape similar to the shape of the slit of the slit mask 20 selected in advance. The correction processing portion for imaging the image 13 can be, for example, a linear linear wiring 6 as shown in the second (a) diagram or a three-shaped circular wiring 7 as shown in the second (b) diagram. shape. Further, in the second (a) and (b) drawings, in order to simplify the illustration, the display of the wiring or the like other than the corrected processed portion is omitted. The correction wiring of the shape shown in Figs. 2(a) and 2(b) is formed, for example, on the wiring shown in Fig. 3(a). Fig. 3(a) is a plan view showing a wiring structure in which a data line 1, a gate line 2, and a transistor 3 as a TFT (Thin Film Transistor) are formed on a substrate. As shown in Fig. 3(a), the data line 1 and the gate line 2 constituting the liquid crystal wiring pattern are arranged in a lattice on the substrate 15. Further, a plurality of electro-crystal bodies 3 are formed on the gate line 2. In the third (a) diagram, wiring defects are left, which are similar to the disconnection defect 4 generated in the wiring forming step, and the pattern shape of the broken portion due to etching or the like in the step of forming the transistor 3. Defect 5. In the case where the wiring defects of these are corrected, as shown in Fig. 3(b), the linear wiring 6 is formed at the position of the broken defect 4 of the third figure (a). Further, the bypass wiring 7 is formed at the position of the pattern shape defect 5 of the third (a) figure. Fig. 4(a) is a cross-sectional view taken along line AA shown in Fig. 3(b), Fig. 4(b) is a cross-sectional view taken along line BB shown in Fig. 3(b), and Fig. 3(c) is a view 3(b) 1376749 A cross-sectional view of the CC line shown. In the present embodiment, as shown in FIG. 4(a), the first linear wiring 6a and the second straight line are sequentially formed from the substrate 15 side so as to connect the disconnecting portions of the data lines 1 formed on the substrate 15. Wiring 6b. Each of the first linear wiring 6a and the second linear wiring 6b is a conductive film. Further, as shown in the fourth (b) and (c), the first bypass wiring 7a and the second routing wiring 7b are sequentially formed from the substrate side by connecting the pattern shape defects (broken portions) of the data line 1. . The first bypass wiring 7a and the second winding wiring 7b are also electrically conductive films. As shown in Fig. 4(c), the insulating film 25 is formed on the gate line 2 before the first turn-around wiring 7a is formed at the portion spanning the gate line 2. The wiring defects such as the disconnection defect 4 and the pattern shape defect 5 are corrected by forming the correction wiring as described above. Further, the reason why the correction wiring having the two-layer structure described above is formed will be described later. As described above, according to the configuration of the present embodiment, the conductive film can be formed at one time by the laser CVD method in accordance with the shape pattern of the corrected processed portion. As a result, the correction processing time can be greatly shortened, and the speed can be increased.
再者，針對本實施形態之雷射加工方法，與前述之關 聯技術（第6(a)、（b)及第7(a)、（b)圖）進行比較說明。第5(a) 圖爲顯示前述之關聯技術的雷射加工方法之流程圖。如第 5(a)圖所示，當開始修正加工時（步驟S50)，輸出預定（中等 程度）之強度的雷射（步驟S52)，進行往路之XY掃描，而 進行第1修正加工（步驟S54)。接著，輸出與步驟S52之情 況相同強度的雷射（步驟S56)，進行返路之XY掃描，而進 行第2修正加工（步驟S58)。如此，藉由進行雙方向之CVD -12- 1376749 置的構成之剖視圖及立體圖。 第2(a)、（b)圖爲顯示藉由本發明之實施形態的雷射加 工裝置所形成的修正配線之俯視圖》 第3(a)圖爲顯示液晶顯示裝置之配線構造中的缺陷之 俯視圖，第3(b)圖爲顯示形成於第3(a)圖所示缺陷上的修 正配線之俯視圖。 第4(a)圖爲弟3(b)圖所不之A-A線之剖視圖 > 第4(b) 圖爲第3(b)圖所示之B-B線之剖視圖，第4(c)圖爲第3(b) 圖所示之C - C線之剖視圖。 第5 (a)圖爲顯示根據關聯技術的雷射加工方法之流程 圖，第5 (b)圖爲顯示根據本發明之實施形態的雷射加工方 法之流程圖。 第6(a)、（b)圖爲顯示相關之雷射加工裝置的構成之剖 視圖及立體圖。 第7(a)、（b)圖爲顯示藉由第6(a)、（b)圖所示之雷射加 工裝置所形成的修正配線之俯視圖。 【主要元件符號說明】 1 資料線 2 閘極線 3 電晶體 4 斷線缺陷 5 圖案形狀缺陷 6 ' 17 直線配線 6a 第1直線配線 -16- 1376749Further, the laser processing method according to the present embodiment will be described in comparison with the above-described related art (Figs. 6(a), (b) and 7(a) and (b)). Figure 5(a) is a flow chart showing the laser processing method of the aforementioned related art. As shown in Fig. 5(a), when the correction processing is started (step S50), a predetermined (medium) intensity laser is output (step S52), and XY scanning of the forward path is performed, and the first correction processing is performed (step S54). Next, a laser of the same intensity as that in the case of step S52 is output (step S56), and XY scanning of the return path is performed, and the second correction processing is performed (step S58). Thus, a cross-sectional view and a perspective view of a configuration in which two-direction CVD-12-1376749 is disposed is performed. 2(a) and 2(b) are plan views showing correction wirings formed by the laser processing apparatus according to the embodiment of the present invention. FIG. 3(a) is a plan view showing defects in the wiring structure of the liquid crystal display device. Fig. 3(b) is a plan view showing the correction wiring formed on the defect shown in Fig. 3(a). Fig. 4(a) is a cross-sectional view of the AA line which is not shown in Fig. 3(b)> Fig. 4(b) is a cross-sectional view taken along line BB shown in Fig. 3(b), and Fig. 4(c) is a view A cross-sectional view of the C-C line shown in Figure 3(b). Fig. 5(a) is a flow chart showing a laser processing method according to the related art, and Fig. 5(b) is a flow chart showing a laser processing method according to an embodiment of the present invention. Fig. 6(a) and (b) are a cross-sectional view and a perspective view showing the configuration of a related laser processing apparatus. Fig. 7(a) and (b) are plan views showing the correction wiring formed by the laser processing apparatus shown in Figs. 6(a) and 6(b). [Description of main component symbols] 1 Data line 2 Gate line 3 Transistor 4 Broken line defect 5 Pattern shape defect 6 ' 17 Straight line wiring 6a 1st line wiring -16- 1376749
6b 第 2 直 線 配 線 7、1 9 迂 迴 配 線 7a 第 1 迂 迴 配 線 7b 第 2 迂 迴 配 線 8、1 0 雷 射光 9 細 縫 9a 開 □ 11 中 繼 透 鏡 12 物 鏡 13 影 像 14 氣 窗 15 基 板 1 6、1 8 掃 描 方 向 20 細 縫 遮 罩 2 1 轉 換 機 構 23 直 線 形 狀 細 縫 24 迂 迴 形 狀 細 縫 ^ 25 絕 緣 膜 27a、27b、28a、28b6b 2nd linear wiring 7, 1 9 bypass wiring 7a 1st winding wiring 7b 2nd winding wiring 8, 1 0 laser light 9 slit 9a opening □ 11 relay lens 12 objective lens 13 image 14 gas window 15 substrate 1 6、1 8 Scanning direction 20 Slit mask 2 1 Conversion mechanism 23 Straight shape slit 24 Round shape slit 2 25 Insulation film 27a, 27b, 28a, 28b