JP2007184342A - Exposure system, exposure method and device manufacturing method - Google Patents

Exposure system, exposure method and device manufacturing method Download PDF

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JP2007184342A
JP2007184342A JP2006000409A JP2006000409A JP2007184342A JP 2007184342 A JP2007184342 A JP 2007184342A JP 2006000409 A JP2006000409 A JP 2006000409A JP 2006000409 A JP2006000409 A JP 2006000409A JP 2007184342 A JP2007184342 A JP 2007184342A
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wafer
exposure
measurement
substrate
holding member
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Masahiko Yasuda
雅彦 安田
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Nikon Corp
株式会社ニコン
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Abstract

An exposure system and an exposure method capable of improving overlay accuracy while preventing a decrease in throughput, and a device manufacturing method using the exposure system or the exposure method are provided.
An exposure system of the present invention includes a wafer stage WST on which a wafer holder WH that holds a wafer W is placed, an exposure unit 1 that exposes a pattern DP of a reticle R onto the wafer W, a measurement unit 2, And a transfer device 3. The measurement unit 2 includes a plurality of sensors 31 and a plurality of alignment marks AM formed at different positions on the wafer W held by the wafer holder WH before being held by the wafer stage WST of the exposure unit 1. Measure more than one simultaneously. The transfer device 3 transfers the wafer holder WH holding the wafer W between the measurement unit 2 and the exposure unit 1.
[Selection] Figure 1

Description

  The present invention relates to an exposure system and an exposure method for exposing and transferring a predetermined pattern onto a substrate, and a device manufacturing method using the exposure system or the exposure method.

  In recent years, devices such as semiconductor elements, liquid crystal display elements, imaging devices (CCD (Charge Coupled Device)), thin film magnetic heads, and the like have been highly integrated. In particular, a semiconductor element is often a large scale integrated circuit (LSI: Large Scale Integration) in which various electrical components are integrated on one chip due to demands for higher functionality and lower cost. Since the LSI greatly affects the performance of the entire electronic device in which the LSI is mounted, it is desired to improve the performance of the LSI alone. In particular, there is a growing demand for lower power consumption while increasing the speed of transistors formed in LSI.

In recent years, attention has been paid to a technique for partially forming a region made of strained silicon as a technique for increasing the speed of a transistor. Here, the strained silicon is a semiconductor layer (for example, SiGe (silicon germanium) layer) having a different lattice constant formed on the silicon layer, and tensile strain or compressive strain is applied to the silicon layer to increase the moving speed of electrons or holes. It is an improvement. For example, a strained silicon transistor is formed by forming such strained silicon at the gate portion. For details of a technique for partially forming a region made of strained silicon, see, for example, Patent Documents 1 to 3 below.
Japanese Patent No. 3376208 Japanese Patent No. 3376211 Japanese Patent No. 3403676

  By the way, when manufacturing the above device, an exposure process for transferring a predetermined pattern onto the substrate in a lithography process is repeatedly performed. In this exposure process, it is necessary to accurately superimpose the pattern already formed on the substrate and the optical image of the pattern to be formed next. When a region made of strained silicon is partially formed on the substrate, the direction in which the stress acts on the substrate is not constant, and the magnitude is not constant on the substrate. It is not constant, and there is a possibility that sufficient overlay accuracy cannot be obtained in the exposure process.

  In the above exposure processing, EGA measurement is generally performed in order to improve throughput (the number of substrates that can be subjected to exposure processing per unit time). Here, the EGA measurement is the position of only a few representative (about 3 to 9) alignment marks among the position measurement marks (alignment marks) attached to the shot area set on the substrate. This is a measurement method in which measurement is performed and statistical calculation is performed using the measurement result to obtain an array of all shot areas set on the substrate.

  If the above EGA measurement is performed, even if linear distortion or non-linear distortion is generated on the substrate, superposition can be performed in consideration of these. However, when a region made of strained silicon is partially formed on the substrate, it is difficult to cope with this because the strain is random. Therefore, it is considered that the overlay accuracy can be improved by increasing the number of alignment marks to be measured in EGA measurement. However, if the number of alignment marks is increased, the throughput is lowered.

  The present invention has been made in view of the above circumstances, and provides an exposure system and an exposure method capable of improving overlay accuracy while preventing a decrease in throughput, and a device manufacturing method using the exposure system or exposure method. The purpose is to provide.

The present invention adopts the following configuration corresponding to each diagram shown in the embodiment. However, the reference numerals with parentheses attached to each element are merely examples of the element and do not limit each element.
In order to solve the above-described problems, an exposure system of the present invention exposes a predetermined pattern (DP) on a substrate (W) on which a device pattern is formed while locally distorting a specific region. In an exposure system including a unit (1), a stage device (WST) provided on the exposure unit and mounting a holding member (WH) for holding the substrate, and the holding before being held by the stage device A measurement unit (2) comprising a plurality of measurement devices (31) for simultaneously measuring a plurality of position measurement marks (AM) formed at different positions on the substrate held by a member; and the substrate It is characterized by comprising a transport device (3) for transporting the holding member for holding between the measuring unit and the exposure unit.
According to this invention, a plurality of position measurement marks formed at different positions on the substrate held by the holding member are simultaneously measured by the plurality of measuring devices, and the holding member holding the substrate is transported after the measurement. A predetermined pattern is exposed onto the substrate which is transported by the apparatus and is held on the stage apparatus of the exposure unit and held by the holding member.
In order to solve the above-described problems, an exposure method of the present invention includes a substrate (W) held on a holding member (WH) placed on a substrate stage (WST) movable in a two-dimensional plane. An exposure method for exposing a predetermined pattern (DP), wherein a plurality of holding members holding the substrate are formed at different positions on the substrate before being placed on the substrate stage. Measuring steps (S12, S22) for simultaneously measuring a plurality of position measuring marks (AM) using a plurality of measuring devices (31), and after the measuring step, on the holding member in the measuring step A step (S25) of delivering the holding member onto the substrate stage while maintaining the holding state of the substrate.
According to this invention, before the holding member that holds the substrate is placed on the substrate stage, a plurality of position measurement marks formed at different positions on the substrate are simultaneously measured by a plurality of measuring devices, After the measurement is completed, the holding member is delivered onto the substrate stage of the exposure unit while the holding state of the substrate on the holding member is maintained.
The device manufacturing method of the present invention is characterized in that a device is manufactured using the above exposure system or the above exposure method.

  According to the present invention, a plurality of position measurement marks formed on the substrate held by the holding member are simultaneously measured by a plurality of measurement devices before being held by the stage device of the exposure unit. A decrease can be prevented. The substrate is transported by the transport device while being held by the holding member, and is placed on the stage device of the exposure unit while being held by the holding member. For this reason, overlay accuracy can be improved when exposing a predetermined pattern.

  Hereinafter, an exposure system, an exposure method, and a device manufacturing method according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a side view showing a schematic configuration of an exposure system according to an embodiment of the present invention. As shown in FIG. 1, the exposure system of the present embodiment includes an exposure unit 1, a measurement unit 2, and a transport device 3. The exposure unit 1 exposes a predetermined pattern on the substrate. The measurement unit 2 measures a position measurement mark formed on the substrate. The transport device 3 transports the substrate between the exposure unit 1 and the measurement unit 2.

  Here, in the present embodiment, it is assumed that the substrate is a semiconductor wafer (hereinafter referred to as a wafer W) in which a plurality of layers are stacked and a plurality of partitioned regions (shot regions) are set. Further, it is assumed that a local region (region made of strained silicon) that is intentionally distorted in a predetermined layer in the shot region is provided on the wafer W. That is, it is assumed that the substrate is a wafer W in which a region made of strained silicon is partially formed. In the present embodiment, it is assumed that the wafer W is held on the wafer holder WH and is transferred while being held on the wafer holder WH by the transfer device 3 while maintaining this held state. Next, the details of the exposure unit 1, the measurement unit 2, and the transfer device 3 will be described.

  The exposure unit 1 is an exposure unit that exposes a pattern for manufacturing a semiconductor element. The exposure unit 1 synchronously moves the reticle R as a mask and the wafer W as a substrate held on the wafer stage WST, while moving the reticle R. A reduction projection type exposure unit of a step-and-scan method that sequentially transfers the pattern DP formed on the wafer W onto the wafer W. In the following description, if necessary, an XYZ orthogonal coordinate system is set in the drawing, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. In this XYZ orthogonal coordinate system, the XY plane is set to a plane parallel to the horizontal plane, and the Z axis is set to the vertical upward direction. Further, it is assumed that the synchronous movement direction (scanning direction) of reticle R and wafer W during exposure is set in the Y direction.

  The exposure unit 1 shown in FIG. 1 includes an illumination optical system ILS that illuminates a slit-shaped (rectangular or arc-shaped) illumination region extending in the X direction on the reticle R with exposure light EL having uniform illuminance, and the reticle R. Reticle stage RST for holding, projection optical system PL for projecting the image of pattern DP of reticle R onto wafer W coated with photoresist, wafer stage WST for holding wafer W, and a main control system for controlling these MC is included.

The illumination optical system ILS includes a light source unit, an illuminance uniforming optical system including an optical integrator, a beam splitter, a condensing lens system, a reticle blind, an imaging lens system, and the like (all not shown). . The configuration of the illumination optical system ILS is disclosed in, for example, JP-A-9-320956. Here, as the light source unit, a KrF excimer laser (wavelength 248 nm), an ArF excimer laser (wavelength 193 nm), an F 2 laser light source (wavelength 157 nm), a Kr 2 laser light source (wavelength 146 nm), an Ar 2 laser light source ( An ultraviolet laser light source having a wavelength of 126 nm), a copper vapor laser light source, a harmonic generation light source of a YAG laser, a harmonic generation device of a solid-state laser (semiconductor laser, etc.), or a mercury lamp (i-line, etc.) can be used. .

  The reticle stage RST holds the reticle R by vacuum chucking or electrostatic chucking, and is on the upper surface of a reticle support base (surface plate) 11 disposed horizontally below the illumination optical system ILS (−Z direction). Thus, it is configured to be movable with a predetermined stroke in the scanning direction (Y direction). In addition, the reticle stage RST is configured to be minutely driven with respect to the reticle support base 11 in the X direction, the Y direction, and the rotation direction around the Z axis (θZ direction).

  A movable mirror 12 is provided at one end on the reticle stage RST, and a laser interferometer (hereinafter referred to as a reticle interferometer) 13 is disposed on the reticle support 11. Reticle interferometer 13 irradiates the mirror surface of movable mirror 12 with laser light and receives the reflected light, so that the position of reticle stage RST in the X direction, the Y direction, and the rotational direction (θZ direction) about the Z axis. Is detected. Position information of the reticle stage RST detected by the reticle interferometer 13 is supplied to a main control system MC that controls the overall operation of the apparatus. The main control system MC controls the operation of the reticle stage RST via the reticle driving device 14 that drives the reticle stage RST.

  Above the reticle stage RST (+ Z direction), a reticle alignment sensor 15 that measures a position measurement mark (hereinafter referred to as a reticle mark) formed on the reticle R is disposed. The reticle alignment sensor 15 is a VRA (Visual Reticle Alignment) type alignment sensor equipped with an image sensor such as a CCD (Charge Coupled Device). The imaging device included in the reticle alignment sensor 15 converts an optical image incident on the imaging surface into a two-dimensional image signal and outputs a two-dimensional image signal.

  The measurement result (two-dimensional image signal) of the reticle alignment sensor 15 is supplied to the main control system MC, and the main control system MC is subjected to processing such as image processing, arithmetic processing, filtering processing, pattern matching, and the like, and position information of the reticle mark. Is required. The main control system MC controls the position and orientation of the reticle stage RST via the reticle driving device 14 based on this position information. The reticle alignment sensor 15 can also simultaneously observe the reticle mark and a reference mark FM (details will be described later) formed on the wafer holder WH. From the measurement result obtained as a result of this observation, the relative positional relationship between the reticle R and the wafer holder WH is obtained. The reticle alignment sensor 15 is configured to be movable in the X direction. The reticle alignment sensor 15 is arranged on the reticle R when measuring the reticle mark, but when exposing the wafer W. It is evacuated to a predetermined evacuation position.

  The projection optical system PL is configured to include a plurality of refractive optical elements (lens elements), and both the object plane (reticle R) side and the image plane (wafer W) side are telecentric and have a predetermined reduction magnification β (β is For example, refractive optical systems having 1/4, 1/5, etc.) are used. The direction of the optical axis AX of the projection optical system PL is set to the Z direction orthogonal to the XY plane. For example, quartz or fluorite is used as the glass material of the plurality of lens elements provided in the projection optical system PL according to the wavelength of the exposure light EL. In the present embodiment, the projection optical system PL that projects an inverted image of the pattern DP formed on the reticle R onto the wafer W will be described as an example. Of course, an upright image of the pattern DP is projected. May be.

  The projection optical system PL is provided with a lens controller unit 16 that measures temperature and atmospheric pressure and controls optical characteristics such as image formation characteristics of the projection optical system PL according to environmental changes such as temperature and atmospheric pressure. Yes. The measurement results of the temperature and atmospheric pressure of the lens controller unit 16 are output to the main control system MC. The main control system MC passes the lens controller unit 16 through the temperature and atmospheric pressure measurement results output from the lens controller unit 16. Thus, the optical characteristics such as the imaging characteristics of the projection optical system PL are controlled.

  Wafer stage WST is disposed below projection optical system PL (in the −Z direction), and mounts wafer holder WH holding wafer W on the upper surface thereof. When the wafer W held by the wafer holder WH is placed on the upper surface of the wafer stage ST, the wafer W is held by vacuum suction or electrostatic suction. Wafer stage WST is configured to be movable with a predetermined stroke in the scanning direction (Y direction) on the upper surface of wafer support base (surface plate) 17 and is configured to be capable of step movement in X and Y directions. In addition, it can be finely moved in the Z direction (including rotation around the X axis and rotation around the Y axis). By this wafer stage WST, the wafer W can be moved in the X direction and the Y direction, and the position and posture (rotation around the X axis and rotation around the Y axis) of the wafer W can be adjusted. .

  A moving mirror 18 is provided at one end on wafer stage WST, and a laser interferometer (hereinafter referred to as a wafer interferometer) that irradiates a mirror surface (reflection surface) of moving mirror 18 with laser light outside wafer stage WST. 19 is provided. This wafer interferometer 19 irradiates the mirror surface of the movable mirror 18 with a laser beam and receives the reflected light, whereby the position and orientation (X axis, Y axis, Z axis) of the wafer stage WST in the X direction and Y direction. Surrounding rotations θX, θY, θZ) are detected. The detection result of the wafer interferometer 19 is supplied to the main control system MC. Main control system MC controls the position and orientation of wafer stage WST via wafer drive device 20 based on the detection result of wafer interferometer 19.

  Furthermore, the exposure unit 1 according to the present embodiment includes an alignment mark AM attached to a shot area set on the wafer W or a reference mark FM formed on the wafer holder WH on the side surface in the Y direction of the projection optical system PL. An FIA (Field Image Alignment) type alignment sensor 21 for measuring position information is arranged. Although a plurality of alignment marks AM are formed on the wafer W, only one is shown in FIG.

  The alignment sensor 21 has an optical axis parallel to the optical axis AX of the projection optical system PL, and includes an imaging element such as a CCD as in the reticle alignment sensor 15 described above, and images the alignment mark AM on the wafer W. Then, the image signal is obtained. The measurement result of the alignment sensor 21 is supplied to the main control system MC, and the main control system MC is subjected to processing such as image processing, calculation processing, filtering processing, pattern matching, and the like, so that the position information of the alignment mark AM or the position of the reference mark FM Information is required.

  The detailed configuration of the alignment sensor 21 is disclosed in, for example, Japanese Patent Laid-Open No. 9-219354 and US Pat. No. 5,859,707 corresponding thereto. The main control system MC performs EGA measurement using the position information obtained by measurement using the alignment sensor 21 or measurement by the measurement unit 2. Here, the EGA measurement is performed by performing predetermined statistical calculation (EGA calculation) on the wafer W by using the measurement results of several representative (3 to 9) alignment marks AM formed on the wafer W. This is a measurement method for obtaining the arrangement of all set shot areas.

  The main control system MC moves the wafer stage WST via the wafer drive device 20 based on the EGA measurement result, and aligns the projection position of the pattern DP formed on the reticle R with the shot area to be exposed. Do. As described above, the EGA calculation can be performed using the measurement result obtained by measuring the alignment mark AM on the wafer W by the alignment sensor 21, but in the present embodiment, the measurement unit 2 performs the measurement. A case where EGA measurement is performed using the obtained position information will be described.

  The exposure unit 1 is composed of a light transmission system 22a and a light transmission system 22b, and is set in and near the exposure slit area on the wafer W conjugate with the illumination area on the reticle R with respect to the projection optical system PL. A multi-point AF sensor 22 that detects the position in the Z direction (optical axis AX direction) of the surface of the wafer W at each of a plurality of detection points is provided on the side of the projection optical system PL. The multipoint AF sensor 22 detects the surface position and posture of the wafer W in the optical axis AX direction of the projection optical system PL (rotations θX and θY around the X and Y axes: leveling).

  The detection result of the multipoint AF sensor 22 is supplied to the main control system MC. Main control system MC controls the position and orientation of wafer stage WST via wafer drive device 20 based on the detection result of multipoint AF sensor 22. Specifically, a reference surface (hereinafter referred to as an AF surface) that serves as a reference for aligning the surface of the wafer W is set in advance in the main control system MC, and the main control system MC detects the detection result of the multipoint AF sensor 22. Based on the above, the position and orientation of wafer stage WST are controlled so that the surface of wafer W coincides with the AF plane.

  The main control system MC controls each part of the exposure unit 1 according to a preset exposure recipe (exposure control information), and performs an exposure process for transferring the pattern formed on the reticle R onto the wafer W. Specifically, control for performing relative alignment between reticle R and wafer stage WST is performed based on the measurement result of reticle alignment sensor 15 or the measurement results of reticle alignment sensor 15 and alignment sensor 21. Further, the main control system MC performs EGA calculation using the measurement result of the measurement unit 2 to obtain the array coordinates of all shot areas on the wafer W. When the wafer W is exposed, the synchronous movement of the reticle stage RST and the wafer stage WST is controlled through the reticle driving device 14 and the wafer driving device 20, and the exposure amount of the exposure light EL is controlled. Based on the detection result of the sensor 22, the position and orientation of the wafer W in the Z direction are controlled.

  The measurement unit 2 includes a measurement stage ST and a plurality of sensors 31 arranged above the measurement stage ST. The measurement unit 2 is provided outside the exposure unit 1 and measures the alignment mark AM formed in advance on the wafer W before the exposure unit 1 exposes the wafer W. The position where the measurement unit 2 is provided may be outside the exposure unit 1. For example, it may be provided in the middle of a wafer transfer apparatus that transfers the wafer W to the exposure unit 1, or may be provided separately from the exposure apparatus including the exposure unit 1 and the wafer transfer apparatus. Here, the alignment mark AM of the wafer W is measured prior to exposure using the measurement unit 2 in order to improve the overlay accuracy while preventing a reduction in the throughput of the exposure process.

  The measurement stage ST places the wafer holder WH holding the wafer W on the upper surface thereof. When the wafer W held by the wafer holder WH is placed on the upper surface of the measurement stage ST, the wafer W is held by vacuum suction or electrostatic suction. The measurement stage ST is configured to be step-movable in the X direction and the Y direction on the upper surface of the surface plate 32, and can be finely moved in the Z direction (including rotation around the X axis and rotation around the Y axis). It is configured. With this measurement stage ST, the wafer W can be moved in the X direction and the Y direction, and the position and posture (rotation around the X axis and rotation around the Y axis) of the wafer W can be adjusted. . In this embodiment, the case where the main control system MC provided in the exposure unit 1 controls the measurement stage ST will be described as an example. However, the control of the measurement stage ST is provided separately from the exposure unit 1. May be performed by the control apparatus provided.

  The sensor 31 measures the position of the alignment mark AM formed on the wafer W and the reference mark FM formed on the wafer holder WH. The sensor 31 is desirably an FIA type sensor similar to the alignment sensor 21 provided in the exposure unit 1. That is, it is preferable to use an image pickup device such as a CCD that picks up an image of the alignment mark AM on the wafer W or the reference mark FM of the wafer holder WH and obtains an image signal thereof. However, it is not limited to the FIA system.

  The measurement result (two-dimensional image signal) of each sensor 31 is supplied to the main control system MC of the exposure unit 1 and subjected to processing such as image processing, arithmetic processing, filtering processing, pattern matching, and the like in the main control system MC. Position information is required. In the present embodiment, the measurement result of each sensor 31 is directly supplied to the main control system MC and the position information is obtained by the main control system MC. A position information calculation device for obtaining information may be provided in the measurement unit 2 and the calculation result may be supplied to the main control system MC of the exposure unit 1.

  Here, the shot area on the wafer W, the alignment mark AM, and the reference mark FM formed on the wafer holder WH will be described. FIG. 2 is a top view of the wafer holder WH and the wafer W held thereon. As shown in FIG. 2A, the wafer W is held on the wafer holder WH substantially concentrically with the wafer holder WH. On the wafer W, rectangular shot regions SH are arranged at regular intervals, and an alignment mark AM is attached to each of the shot regions SH. In FIG. 2A, the alignment mark AM is shown larger for convenience of illustration. The size and number of the shot areas SH may be changed for each device to be manufactured, and the shape of the alignment mark AM and the position in the shot area SH may be changed for each layer to be formed.

  As shown in FIG. 2B, the alignment mark AM has, for example, a rectangular shape extending in the Y direction and X marks mx arranged at equal intervals in the X direction, and a rectangular shape extending in the X direction. It consists of Y marks my arranged at equal intervals in the direction. By measuring the X mark mx of the alignment mark AM, the position in the X direction of the shot area SH provided with the alignment mark AM is obtained, and by measuring the Y mark my, the shot area provided with the alignment mark AM The position of SH in the Y direction is obtained. That is, the position information obtained by measuring the alignment mark AM is position information representative of the shot area SH provided with the alignment mark AM.

  On the wafer holder WH, reference marks FM are formed at a plurality of locations along the outer periphery of the portion where the wafer W is held, that is, the upper surface of the wafer holder WH. 2A shows an example in which the reference marks FM are formed at substantially equal intervals at three different locations along the outer periphery of the wafer holder WH. However, the number of the reference marks FM is at least three. If it is good. As the reference mark FM, a mark can be used similarly to the alignment mark AM shown in FIG. Although details will be described later, after the wafer W and the wafer holder WH are transferred to the exposure unit 1, the reference mark FM is observed by the reticle alignment sensor 15 simultaneously with the reticle mark formed on the reticle R. For this reason, it is desirable that the shape of the reference mark FM is a shape corresponding to the shape of the reticle mark.

  FIG. 3 is a plan view illustrating an example of a planar arrangement of the sensors 31 provided in the measurement unit 2. In FIG. 3, the wafer W and the wafer holder WH are shown together with the plurality of sensors 31 in order to clarify the interval between the sensors 31. As shown in FIG. 3, the sensor 31 provided in the measurement unit 2 includes a plurality of sensors 31a that measure the alignment marks AM formed on the wafer W and a plurality of sensors that measure the reference marks FM formed on the wafer holder WH. 31b. FIG. 3 illustrates an example in which four sensors 31a and four sensors 31b are provided, but these numbers are arbitrary.

  In the example shown in FIG. 3, two of the four sensors 31b that measure the reference mark FM are arranged on a straight line along the X axis, and the remaining two are arranged on a straight line along the Y axis. Further, when the XY orthogonal coordinate system is set with the intersection point of the straight line along the X axis where the two sensors 31b are arranged and the straight line along the Y axis where the remaining two sensors 31b are arranged as an origin, Four sensors 31a that measure the alignment mark AM are arranged one by one in each of the first to fourth quadrants.

  The plurality of sensors 31a that measure the alignment mark AM formed on the wafer W can move on the wafer stage WST and the mounting surface (in the XY plane) of the measurement stage ST, but the reference mark FM formed on the wafer holder WH. The position in the XY plane of the plurality of sensors 31b that measure the angle is fixed. The relative positional relationship between the alignment mark AM measurement sensor 31a and the reference mark FM measurement sensor 31b is strictly managed by the main control system MC of the exposure unit 1, for example. The sensor 31a is set in a range in which the reference mark FM formed on the wafer holder WH can be measured, and measures the position of the alignment mark AM formed on the wafer W with reference to the reference mark FM.

  The transfer device 3 includes, for example, a transfer arm that holds the wafer holder WH from below, a slider that moves the transfer arm in the XY plane, and the like. The wafer W is held between the exposure unit 1 and the measurement unit 2. The wafer holder WH is transported. More specifically, the wafer holder WH placed on the measurement unit ST is held on the transfer arm, the wafer holder WH is transferred to the exposure unit 1, and the transferred wafer holder WH is transferred onto the wafer stage WST. The wafer holder WH on the wafer stage WST on which the exposed wafer W is held is held on the transfer arm, the wafer holder WH is transferred to the measurement unit 2, and the transferred wafer holder WH is received on the measurement stage ST. hand over. Note that the wafer holder WH holding the exposed wafer W is not necessarily transported to the measurement unit 2 and may be transported outside without passing through the measurement unit 2. In the present embodiment, the operation of the transport device 3 is controlled by the main control system MC of the exposure unit 1.

  Next, an exposure method according to an embodiment of the present invention will be described. FIG. 4 is a flowchart showing an outline of an exposure method according to an embodiment of the present invention. First, a user places a carrier such as a FOUP (Front Opening Unified Pod) in which a lot of wafers W (for example, 25 wafers) are accommodated at a wafer load start position (not shown) of the exposure system. Next, when the user operates the input device (not shown) provided in the main control system MC of the exposure unit 1 to instruct the start of the exposure process, the main control system MC of the exposure unit 1 causes the reticle transport device (not shown) (not shown). The reticle loader) is controlled to convey the reticle R according to the exposure recipe. Reticle R conveyed by the reticle conveying apparatus is held on reticle stage RST (step S11).

  Next, the main control system MC controls a wafer transfer device (wafer loader) (not shown) to take out the wafer W accommodated in the carrier from the carrier and hold it on the wafer holder WH. Thereafter, the main control system MC causes the measurement unit 2 to measure the wafer W on the wafer holder WH, and loads the wafer holder WH holding the wafer W that has been measured into the exposure unit 1 (step S12). . Note that the wafer W taken out from the carrier may be held on the wafer holder WH before the wafer W is held on the measurement stage ST or on the measurement stage ST. In the present embodiment, a case where the wafer W is held on the wafer holder WH before being held on the measurement stage ST will be described as an example. Further, in order to prevent distortion of the wafer W due to a temperature difference between the wafer W and the wafer holder WH, it is desirable to manage the temperature of the wafer W and the temperature of the wafer holder WH to be the same.

  Here, details of the measurement process performed in the measurement unit 2 will be described. FIG. 5 is a flowchart showing details of step S12. The wafer W taken out from the carrier and held on the wafer holder WH is transferred to the measurement unit 2 together with the wafer holder WH and placed on the measurement stage ST (step S21). When the wafer W and the wafer holder WH are held on the measurement stage ST, the main control system MC places the alignment mark AM in each of the measurement visual fields of the plurality of sensors 31a and measures them simultaneously (step S22). Further, the reference mark FM is arranged in the measurement field of view of the sensor 31b, and the reference mark FM is measured.

  As a method for measuring the alignment mark AM and the reference mark FM, a method in which the sensor 31a is not moved in the XY plane and a method in which the sensor 31a is moved can be considered. When performing measurement without moving the sensor 31a, the main control system MC moves the measurement stage ST stepwise in the XY plane so that the plurality of alignment marks AM are arranged in the measurement field of view of the plurality of sensors 31a. Take measurements. Even when measuring the reference mark FM formed on the wafer holder WH, the measurement is performed while moving the measurement stage ST stepwise in the XY plane so that the reference mark FM is arranged in the measurement field of view of the sensor 31b.

  When performing measurement while moving the sensor 31a, first, the main control system MC steps the measurement stage ST in the XY plane to place the reference mark FM within the measurement field of view of the sensor 31b. Take measurements. Next, after moving the measurement stage ST to a predetermined position, the sensor 31a is moved above the alignment mark AM to be measured, and a plurality of alignment marks AM are arranged in the measurement field of the sensor 31a. The alignment mark AM is measured by a plurality of sensors 31a. The main control system MC knows the position of the reference mark FM from the measurement result of the reference mark FM, and manages the position of the measurement stage ST in the XY plane and the position of each sensor 31 in the XY plane. The position of the alignment mark AM with reference to the reference mark FM can be obtained.

  Here, in the present embodiment, the case where the alignment mark AM is measured by the sensor 31a and the reference mark FM is measured by the sensor 31b will be described as an example. However, the alignment mark AM and the reference mark FM are only measured by the sensor 31a. Measurement may be performed. When performing such measurement, the sensor 31a is first placed above the reference mark FM to be measured and the reference mark FM is measured, and then the sensor 31a is placed above the alignment mark AM to be measured and the alignment mark FM is measured. Measure AM. Thereafter, the same measurement is performed to repeatedly measure the reference mark FM and the alignment mark AM. By performing such measurement, the position information of the alignment mark AM with reference to the reference mark FM can be obtained. In the present embodiment, since three reference marks FM are provided, it is desirable to associate the three sensors 31a with each reference mark FM and perform the above measurement simultaneously (synchronously).

  In the present embodiment, EGA calculation is performed using the measurement result of the measurement unit 2 in a process described later. By performing this EGA calculation, a linear position error (in the substrate) on the array of shot regions arranged on the wafer W (a linear component of the substrate error) and a linear error component in the shot region (shot) A linear component of the internal error) and a random position error (random component). Here, as the linear component of the in-substrate error, a deviation amount (offset) in the X direction due to an error (position error) of wafer stage WST when forming a layer, a magnification error of projection optical system PL, and the like, There are six types: a deviation amount in the Y direction, a rotation amount (rotation) of the wafer W, a magnification in the X direction (scaling), a magnification in the Y direction, and an orthogonality.

  Further, the linear component of the in-shot error may be caused by the aberration of the projection optical system PL when forming a layer. FIG. 6 is a diagram illustrating an example of a random component obtained by EGA calculation and a linear component of an in-shot error. In the exposure process performed when forming a layer on the wafer W, when a pincushion type distortion (distortion) is generated in the projection optical system PL, the shot region SH shown in FIG. It deforms as shown in FIG. FIG. 6 is a diagram for explaining an example of a nonlinear component obtained by EGA calculation. In FIG. 6, a circle marked in each shot area SH represents the center position of the shot area SH.

  Referring to FIG. 6, it can be seen that not only the shape of each shot area SH is changed, but also the center position thereof is non-linearly shifted. Here, even if the alignment mark AM attached to each shot area SH is measured, only the position of each shot area SH (for example, the position of the circle in FIG. 6) is obtained, and the shape change of the shot area SH However, it is possible to indirectly determine the shape change of the shot area SH from the arrangement of the shot areas SH.

  Here, as described above, a region made of strained silicon is partially formed on the wafer W, and it is considered that the alignment mark AM on the wafer W is displaced due to the strained silicon. For this reason, it is considered that the arrangement of the shot areas obtained by the EGA calculation performed later is also affected by the positional deviation of the alignment mark AM due to distortion. If strained silicon is formed on the entire surface of the wafer W, it is considered that the displacement of the alignment mark AM due to the strained silicon is almost uniform, and a linear component of an in-substrate error or an in-shot error obtained by EGA calculation is used. It is considered possible to correct the shot region arrangement.

  However, when the region made of strained silicon is partially formed on the wafer W, the strain becomes random. For this reason, as shown in FIG. 7, it is considered that the displacement of the alignment mark AM is also random. FIG. 7 is a diagram illustrating an example of the positional deviation of the alignment mark AM caused by partial distortion. In FIG. 7, a circle marked in each shot area SH represents a designed center position of the shot area SH, and an arrow marked in each shot area SH indicates an actually formed alignment mark AM. Represents the position shift direction and the position shift amount of the center of the shot area SH obtained from. The random component described above is caused by a random misalignment of the alignment mark AM, and the random component increases as the partial distortion increases due to the strained silicon.

  For this reason, in order to reduce the influence of random components as much as possible, when the alignment mark AM is measured by the measurement unit 2, a larger number of alignment marks AM (preferably, all the shot areas SH on the wafer are all It is desirable to measure the alignment mark AM). It is preferable to appropriately select an alignment mark AM used when performing EGA calculation from a number of alignment marks AM.

  When the measurement of the alignment mark AM and the reference mark FM is completed, the measurement result is transmitted to the main control system MC of the exposure unit 1 (step S23). Here, a case where the measurement result is transmitted to the main control system MC at a time will be described as an example. However, every time the measurement of the alignment mark AM or the reference mark FM is completed, the measurement result is sent to the main control system MC. You may make it transmit. Further, when a position information calculation device for obtaining position information from the measurement results of the sensors 31a and 31b is provided in the measurement unit 2, the positions of the alignment mark AM and the reference mark FM using the measurement results of the sensors 31a and 31b. Information is obtained, and the position information is supplied to the main control system MC of the exposure unit 1.

  When the measurement of the alignment mark AM and the reference mark FM is completed, the main control system MC controls the transfer device 3 to hold the wafer holder WH placed on the measurement unit ST on the transfer arm, and to move the wafer on the wafer holder WH. The wafer holder WH is transported to the exposure unit 1 while maintaining the W holding state (step S24). Then, the transferred wafer holder WH is transferred onto the wafer stage WST (step S25). Thus, the process of step S12 in FIG. 4 is completed.

  When the measurement of the wafer W and the loading of the wafer W by the measurement unit 2 are completed, the wafer holder WH that holds the wafer W is held on the wafer stage WST of the exposure unit 1. When wafer holder WH is held on wafer stage WST, main control system MC moves reticle stage RST to a predetermined position and moves wafer stage WST in the XY plane so that reticle mark is projected onto wafer holder WH. Any one of the formed reference marks FM is arranged. Further, the reticle alignment sensor 15 is moved to a position where the reticle mark can be observed.

  When the above arrangement is completed, the reticle alignment sensor 15 is used to simultaneously observe the reticle mark formed on the reticle R and the reference mark FM via the projection optical system PL. When one measurement of the fiducial mark FM is completed, the main control system MC moves the wafer stage WST in the XY plane to place one of the remaining fiducial marks FM at the projection position of the reticle mark, and performs the same measurement. . When the measurement for all the reference marks FM formed on the wafer holder WH is finished, the main control system MC obtains the relative positional relationship between the reticle R and the wafer holder WH from the measurement result (step S13). If there is a positional deviation, it is corrected to zero. That is, relative alignment is performed between the coordinate system of reticle stage RST in which the measurement result of reticle interferometer 13 is used and the coordinate system of wafer stage WST in which the measurement result image of wafer interferometer 19 is used.

  When the above processing is completed, the main control system MC performs an EGA calculation using the measurement result of step S12 (step S22) and the measurement result of step S13. Here, the position information of each alignment mark AM obtained by the measurement in step S12 is based on the reference mark FM formed on the wafer holder WH, and the measurement result itself is applied to the coordinate system of the wafer stage WST. It is not possible. For this reason, the position information of the alignment mark AM is applied to the coordinate system of the wafer stage WST using the measurement result of step S13. By performing the above EGA calculation, the arrangement of shot areas on the wafer W is obtained (step S14).

  Further, as described above, by performing the EGA calculation, the shape change of the shot area can be obtained together with the arrangement of the SH of the shot area on the wafer W. For this reason, the main control system MC also calculates correction information for correcting the shape change of the shot area. Next, the main control system MC of the exposure unit 1 controls the optical characteristics of the projection optical system PL via the lens controller unit 16 based on the calculated correction information (step S15). As a result, the shape of the image of the pattern DP projected onto the wafer W via the projection optical system PL is corrected in accordance with the shape change of the shot region SH. Here, the optical characteristics of the projection optical system PL are controlled in accordance with the shape change of the shot area SH to be exposed first among the plurality of shot areas SH formed on the wafer W.

  When the above process is completed, the exposure process for the shot area SH set on the wafer W is started. When the exposure process is started, first, the main control system MC of the exposure unit 1 drives the reticle stage RST via the reticle driving device 14 to place the reticle R at the exposure start position. At the same time, the wafer stage WST is driven via the wafer driving device 20, and the shot area SH to be exposed first on the wafer W is arranged at the exposure start position.

  When the above arrangement is completed, the main control system MC starts the movement of the reticle stage RST and the wafer stage WST via the reticle driving device 14 and the wafer driving device 20, respectively. After starting the movement of both stages, the main control system MC calculates the moving speed of the reticle stage RST and the wafer stage WST based on the detection results of the reticle interferometer 13 and the wafer interferometer 19, and sets each to a predetermined speed. Determine whether it has been reached. Further, based on the detection results of reticle interferometer 13 and wafer interferometer 19, whether reticle stage RST and wafer stage WST are synchronized, and whether both stages have reached a predetermined position (exposure start position). Judging.

  When it is determined that reticle stage RST and wafer stage WST have reached a predetermined speed and have reached a predetermined position synchronously, main control system MC outputs a control signal to illumination optical system ILS to output exposure light EL. The injection is started, and the reticle R is irradiated with slit-shaped exposure light EL. By irradiation with the exposure light EL, an image of a part of the pattern DP formed on the reticle R (a portion illuminated with the exposure light EL) is projected into the shot area to be exposed first by the projection optical system PL. Here, since reticle stage RST and wafer stage WST move synchronously, the irradiation position of exposure light EL on reticle R changes continuously, and the projection position of the pattern image in the shot area also continues. Changes. As a result, the shot area to be exposed first is sequentially exposed (step S16).

  During the exposure of the shot area, the main control system MC, based on the detection result of the multipoint AF sensor 22, moves the position and orientation (in the Z direction) of the wafer stage WST via the wafer driving device 20. Control (auto focus control) of rotation around the X and Y axes θX, θY: leveling is performed. Thereby, the shot area is exposed in a state where the surface of the wafer W is aligned with the image plane of the projection optical system PL.

  When the exposure process for one shot area is completed, the main control system MC determines whether there is another shot area to be exposed (step S17). If the determination result is “YES”, the main control system MC controls the optical characteristics of the projection optical system PL via the lens controller unit 16 based on the previously obtained correction information (step S15). As a result, the shape of the image of the pattern DP projected onto the wafer W via the projection optical system PL is corrected in accordance with the shape change of the shot area SH to be exposed next.

  Next, the main control system MC drives the wafer stage WST via the wafer drive device 20 and arranges the shot area SH to be exposed next at the exposure start position. Further, the reticle stage RST is driven via the reticle driving device 14 to place the reticle R at the exposure start position. The main control system MC starts the movement of the reticle stage RST and the wafer stage WST via the reticle driving device 14 and the wafer driving device 20, respectively, and exposes the shot area SH to be exposed next (step S16). . While there is a shot area to be exposed (while the determination result of step S17 is “YES”), steps S15 and S16 are repeated.

  On the other hand, when the determination result in step S17 is “NO”, the main control system MC of the exposure unit 1 determines whether or not there is a wafer W to be measured (step S18). If the determination result is “YES”, the transfer device 2 is controlled to unload the wafer W on the wafer stage WST and accommodate it in the carrier. At the same time, a new wafer W accommodated in the carrier is taken out of the carrier and held on the wafer holder WH, and the measurement described above is performed by the measurement unit 2 (step S12). Then, the wafer W that has been measured is transferred to the exposure unit 1, and the wafer W is exposed by the same processing (steps S13 to S16). On the other hand, if the determination in step S18 is “NO”, the process of exposing one lot of wafers W is completed.

  As described above, in the present embodiment, the alignment formed on the wafer W held on the wafer holder WH using the measurement unit 2 before the wafer W is placed on the wafer stage WST of the exposure unit 1. The mark AM is measured. Then, the wafer W is exposed by obtaining an array of shot areas by EGA calculation using the measurement result of the measurement unit 2. For this reason, the measurement of the alignment mark AM after the wafer W and the wafer holder WH are placed on the wafer stage WST of the exposure unit 1 can be omitted, thereby preventing a reduction in throughput.

  Further, in both cases where the alignment mark AM of the wafer W is measured by the measurement unit 2 and the shot area of the wafer W is exposed by the exposure unit 1, the wafer W is held on the wafer holder WH. Yes. Thereby, since the holding state of the wafer W when the alignment mark AM is measured and the holding state of the wafer W when the shot area is exposed can be made equal, measurement by the measurement unit 2 different from the exposure unit 1 is possible. Even if alignment of the wafer W on the wafer stage WST of the exposure unit 1 is performed using the result, the overlay accuracy can be improved.

  As mentioned above, although one Embodiment of this invention was described, this invention is not restrict | limited to the said embodiment, It can change freely within the scope of the present invention. For example, in the above-described embodiment, when the wafer W that has been measured by the measurement unit 2 is placed on the wafer stage WST, the reticle mark and the reference mark FM of the wafer holder WH are simultaneously used using the reticle alignment sensor 15. I was observing. However, the measurement of the reference mark FM may be performed using the alignment sensor 21.

  However, when the fiducial mark FM is measured using the alignment sensor 15, it is necessary to strictly manage the baseline amount. Here, the baseline amount is an amount indicating the positional relationship of wafer stage WST with respect to the projection image of pattern DP projected by projection optical system PL, and specifically, the projection center of projection optical system PL and alignment sensor 21. This is the distance from the center of the measurement visual field.

  Further, a plurality of alignment sensors 21 may be provided in order to shorten the time required for measuring the reference mark FM. For example, as shown in FIG. 2A, when three reference marks FM are provided, three alignment sensors 21 may be provided corresponding to these reference marks FM. By providing a plurality of alignment sensors 21, each of the reference marks FM can be arranged in the measurement visual field of each alignment sensor 21, so that the measurement time of the reference marks FM can be shortened.

  Further, in the above embodiment, correction information for correcting the shape of the shot area for each wafer W is obtained for each shot area. However, when the change in the shape of the shot area between the wafers W shows a similar tendency, correction information common to the wafers W is obtained, and the change in the shape of the shot area of each wafer W is corrected using this correction information. You may do it.

  In the above embodiment, the case where the exposure unit 1 is of the step-and-scan type reduction projection type has been described as an example. However, in the present invention, the exposure unit 1 is reduced by the step-and-repeat type. The present invention can also be applied to a projection type. The present invention can also be applied to a twin stage type exposure apparatus provided with a plurality of wafer stages. The structure and exposure operation of a twin stage type exposure apparatus are described in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6,549). , 269 and 6,590,634), JP 2000-505958 (corresponding US Pat. No. 5,969,441) or US Pat. No. 6,208,407. Furthermore, the present invention may be applied to the wafer stage disclosed in Japanese Patent Application No. 2004-168482 filed earlier by the present applicant.

  The present invention can also be applied to an exposure apparatus using a liquid immersion method as disclosed in International Publication No. 99/49504. In the present invention, an immersion exposure apparatus that locally fills the space between the projection optical system PL and the wafer W with a liquid, a substrate to be exposed as disclosed in JP-A-6-124873, is held. An immersion exposure apparatus for moving a stage in a liquid tank, a liquid tank having a predetermined depth formed on a stage as disclosed in JP-A-10-303114, and holding a substrate in the liquid tank The present invention can be applied to any exposure apparatus of the exposure apparatus.

  Further, as the above exposure apparatus, in addition to an exposure apparatus used for manufacturing a semiconductor element and transferring a device pattern onto a semiconductor substrate, exposure used for manufacturing a liquid crystal display element and transferring a circuit pattern onto a glass plate. An exposure apparatus used for manufacturing an apparatus, a thin film magnetic head and transferring a device pattern onto a ceramic wafer, and an exposure apparatus used for manufacturing an image sensor such as a CCD can be used.

  Next, a device manufacturing method will be described. FIG. 8 is a flowchart showing a part of a manufacturing process for manufacturing a semiconductor element as a micro device. As shown in FIG. 8, first, in step S31 (design step), the function / performance design of the semiconductor element is performed, and the pattern design for realizing the function is performed. Subsequently, in step S32 (mask manufacturing step), a mask (reticle) on which the designed pattern is formed is manufactured. On the other hand, in step S33 (wafer manufacturing step), a wafer is manufactured using a material such as silicon.

  Next, in step S34 (exposure processing step), as will be described later, an actual circuit or the like is formed on the wafer by lithography or the like using the mask and wafer prepared in steps S31 to S33. Next, in step S35 (device assembly step), device assembly is performed using the wafer processed in step S34. Step S35 includes processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation) as necessary. Finally, in step S36 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice manufactured in step S35 are performed. After these steps, the microdevice is completed and shipped.

  FIG. 9 is a diagram showing an example of a detailed flow of step S34 of FIG. In FIG. 9, in step S41 (oxidation step), the surface of the wafer is oxidized. In step S42 (CVD step), an insulating film is formed on the wafer surface. In step S43 (electrode formation step), an electrode is formed on the wafer by vapor deposition. In step S44 (ion implantation step), ions are implanted into the wafer. Each of the above steps S41 to S44 constitutes a pre-processing process at each stage of the wafer processing, and is selected and executed according to a necessary process at each stage.

  At each stage of the wafer process, when the above-described pre-processing step is completed, the post-processing step is executed as follows. In this post-processing step, first, in step S45 (resist formation step), a photosensitive agent is applied to the wafer. Subsequently, in step S46 (exposure process), the mask pattern is transferred to the wafer by the lithography system (exposure apparatus) described above. Next, in step S47 (development process), the exposed wafer is developed, and in step S48 (etching step), the exposed members other than the portion where the resist remains are removed by etching. In step S49 (resist removal step), the resist that has become unnecessary after the etching is removed. By repeatedly performing these pre-processing steps and post-processing steps, multiple patterns are formed on the wafer.

  In the microdevice manufacturing method described above, measurement and exposure are performed using the exposure system described above in the exposure step (step S46). For this reason, even if all the alignment marks formed on the wafer are inspected, the throughput is not lowered, and the overlay accuracy can be increased. Thereby, a fine device can be efficiently produced with a high yield.

It is a side view which shows schematic structure of the exposure system by one Embodiment of this invention. It is a top view of the wafer holder WH and the wafer W hold | maintained on it. 4 is a plan view showing an example of a planar arrangement of sensors 31 provided in the measurement unit 2. FIG. It is a flowchart which shows the outline of the exposure method by one Embodiment of this invention. It is a flowchart which shows the detail of process S12. It is a figure which shows an example of the random component calculated | required by EGA calculation, and the linear component of the error in a shot. It is a figure which shows an example of the position shift of alignment mark AM resulting from a partial distortion. It is a flowchart which shows a part of manufacturing process which manufactures the semiconductor element as a microdevice. It is a figure which shows an example of the detailed flow of step S34 of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Exposure unit 2 Measurement unit 3 Conveyance apparatus 15 Reticle alignment sensor 21 Alignment sensor 31, 31a, 31b Sensor AM Alignment mark DP pattern FM Reference mark MC Main control system PL Projection optical system R Reticle RST Reticle stage ST Measurement stage W Wafer WH Wafer holder WST wafer stage

Claims (16)

  1. In an exposure system including an exposure unit that exposes a predetermined pattern on a substrate on which a device pattern is formed while locally distorting a specific region,
    A stage device that is provided in the exposure unit and on which a holding member that holds the substrate is placed;
    A measurement unit comprising a plurality of measurement devices that simultaneously measure a plurality of position measurement marks formed at different positions on the substrate held by the holding member before being held by the stage device;
    An exposure system comprising: a transfer device that transfers the holding member that holds the substrate between the measurement unit and the exposure unit.
  2. A reference mark for position measurement is formed on the holding member,
    The measuring device is
    A first measuring device for measuring the mark formed on the substrate;
    The exposure system according to claim 1, further comprising: a second measuring device that measures the reference mark formed on the holding member.
  3.   The exposure system according to claim 2, wherein the first measurement device is movable in a plane along the mounting surface of the stage device.
  4.   In the first measurement device, the moving range is set to a range in which the reference mark formed on the holding member can be measured, and the mark formed on the substrate is measured using the reference mark as a reference. 4. An exposure system according to claim 3, wherein
  5. The measurement unit includes a measurement stage device for mounting the holding member before being held by the stage device,
    5. The exposure system according to claim 1, wherein the measurement stage device is movable in a plane along a placement surface in a state where the holding member is placed. 6. .
  6.   The exposure system according to any one of claims 1 to 5, wherein the reference marks are formed at least at three different locations on the holding member.
  7. The exposure unit includes
    A sensor device that measures the reference mark of the holding member placed on the stage device; and a control device that aligns the stage device at a predetermined position based on measurement results of the sensor device and the measurement device; The exposure system according to any one of claims 1 to 6, further comprising:
  8. The exposure unit includes a mask stage on which a mask on which a pattern to be exposed and transferred to the substrate is placed;
    The exposure system according to claim 7, further comprising: a projection optical system that projects an image of a pattern formed on the mask onto the substrate on the substrate stage.
  9.   The sensor device simultaneously observes a mark formed on the mask and the reference mark of the holding member via the projection optical system, and measures a relative positional deviation between the mask and the holding member. 9. The exposure system according to claim 8, wherein the exposure system is a sensor.
  10.   9. The exposure system according to claim 8, wherein the sensor device measures the reference mark formed on the holding member without using the projection optical system.
  11.   The exposure system according to claim 10, wherein a plurality of the sensor devices are provided, and each of the plurality of reference marks formed on the holding member is measured at a time.
  12. An exposure method for exposing a predetermined pattern on a substrate held on a holding member placed on a substrate stage movable in a two-dimensional plane,
    Before the holding member holding the substrate is placed on the substrate stage, a plurality of position measurement marks formed at different positions on the substrate are formed using a plurality of measuring devices. A measurement process to measure simultaneously;
    An exposure method comprising: after the measuring step, transferring the holding member onto the substrate stage while maintaining the holding state of the substrate on the holding member in the measuring step.
  13.   The measuring step includes a step of measuring a mark formed on the substrate with reference to a reference mark formed on the holding member using a movable measuring device among the plurality of measuring devices. The exposure method according to claim 12, wherein:
  14.   The exposure method according to claim 13, wherein the reference marks are formed at least at three different locations on the holding member.
  15.   The exposure method according to any one of claims 12 to 14, further comprising a step of aligning the substrate stage at a predetermined position based on a measurement result of the measurement step.
  16. A device manufactured by using the exposure system according to any one of claims 1 to 11 or the exposure method according to any one of claims 12 to 15. Production method.
JP2006000409A 2006-01-05 2006-01-05 Exposure system, exposure method and device manufacturing method Granted JP2007184342A (en)

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