CN101416281B - 具有存储层的背栅半导体器件及其制造方法 - Google Patents

具有存储层的背栅半导体器件及其制造方法 Download PDF

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CN101416281B
CN101416281B CN2006800468797A CN200680046879A CN101416281B CN 101416281 B CN101416281 B CN 101416281B CN 2006800468797 A CN2006800468797 A CN 2006800468797A CN 200680046879 A CN200680046879 A CN 200680046879A CN 101416281 B CN101416281 B CN 101416281B
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layer
channel region
wafer
semiconductor device
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CN101416281A (zh
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C·T·斯威夫特
G·L·辛达洛里
T·B·道
M·A·萨德
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Changxin Memory Technologies Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/687—Floating-gate IGFETs having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
CN2006800468797A 2005-12-14 2006-11-08 具有存储层的背栅半导体器件及其制造方法 Active CN101416281B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/300,077 US7679125B2 (en) 2005-12-14 2005-12-14 Back-gated semiconductor device with a storage layer and methods for forming thereof
US11/300,077 2005-12-14
PCT/US2006/060639 WO2007094873A2 (en) 2005-12-14 2006-11-08 Back-gated semiconductor device with a storage layer

Publications (2)

Publication Number Publication Date
CN101416281A CN101416281A (zh) 2009-04-22
CN101416281B true CN101416281B (zh) 2012-03-21

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US (1) US7679125B2 (enExample)
JP (1) JP5230870B2 (enExample)
CN (1) CN101416281B (enExample)
WO (1) WO2007094873A2 (enExample)

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TWI479609B (zh) * 2010-05-19 2015-04-01 Winbond Electronics Corp 快閃記憶體之製作方法
US9780231B1 (en) 2016-09-21 2017-10-03 Globalfoundries Singapore Pte. Ltd. Integrated circuits with flash memory and methods for producing the same
US10522561B2 (en) 2017-08-23 2019-12-31 Yangtze Memory Technologies Co., Ltd. Method for forming a three-dimensional memory device
CN107464817B (zh) * 2017-08-23 2018-09-18 长江存储科技有限责任公司 一种3d nand闪存的制作方法
US11061146B2 (en) * 2019-01-24 2021-07-13 International Business Machines Corporation Nanosheet radiation dosimeter

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CN1599081A (zh) * 2004-08-17 2005-03-23 北京大学 浮栅闪存场效应晶体管
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US4894693A (en) * 1985-05-01 1990-01-16 Tigelaar Howard L Single-polysilicon dram device and process
CN1388986A (zh) * 2000-08-26 2003-01-01 皇家菲利浦电子有限公司 底栅薄膜晶体管的制作方法
US6888198B1 (en) * 2001-06-04 2005-05-03 Advanced Micro Devices, Inc. Straddled gate FDSOI device
US6943084B2 (en) * 2001-09-10 2005-09-13 Samsung Electronics Co., Ltd. Semiconductor device on silicon-on-insulator and method for manufacturing the semiconductor device
CN1455461A (zh) * 2003-05-29 2003-11-12 北京大学 背棚mos晶体管及其制作方法和静态随机存储器
WO2005041308A1 (en) * 2003-10-23 2005-05-06 Electronics And Telecommunications Research Institute Metal-insulator transition switching transistor and method for manufacturing the same
CN1599081A (zh) * 2004-08-17 2005-03-23 北京大学 浮栅闪存场效应晶体管

Also Published As

Publication number Publication date
US7679125B2 (en) 2010-03-16
WO2007094873A3 (en) 2008-11-06
US20070134888A1 (en) 2007-06-14
JP5230870B2 (ja) 2013-07-10
CN101416281A (zh) 2009-04-22
JP2009520364A (ja) 2009-05-21
WO2007094873A2 (en) 2007-08-23

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