CN101395725B - 光电子半导体芯片 - Google Patents

光电子半导体芯片 Download PDF

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Publication number
CN101395725B
CN101395725B CN200680053614XA CN200680053614A CN101395725B CN 101395725 B CN101395725 B CN 101395725B CN 200680053614X A CN200680053614X A CN 200680053614XA CN 200680053614 A CN200680053614 A CN 200680053614A CN 101395725 B CN101395725 B CN 101395725B
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China
Prior art keywords
substrate
semiconductor layer
semiconductor chip
layer sequence
layer
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CN200680053614XA
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Chinese (zh)
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CN101395725A (zh
Inventor
迈克尔·费雷尔
乌韦·施特劳斯
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN101395725A publication Critical patent/CN101395725A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
CN200680053614XA 2006-01-27 2006-12-20 光电子半导体芯片 Active CN101395725B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006004172.0 2006-01-27
DE102006004172 2006-01-27
DE102006015788A DE102006015788A1 (de) 2006-01-27 2006-04-04 Optoelektronischer Halbleiterchip
DE102006015788.5 2006-04-04
PCT/DE2006/002293 WO2007085218A1 (de) 2006-01-27 2006-12-20 Optoelektronischer halbleiterchip

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201010277177.8A Division CN101976718B (zh) 2006-01-27 2006-12-20 光电子半导体芯片

Publications (2)

Publication Number Publication Date
CN101395725A CN101395725A (zh) 2009-03-25
CN101395725B true CN101395725B (zh) 2010-11-10

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CN200680053614XA Active CN101395725B (zh) 2006-01-27 2006-12-20 光电子半导体芯片
CN201010277177.8A Active CN101976718B (zh) 2006-01-27 2006-12-20 光电子半导体芯片

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201010277177.8A Active CN101976718B (zh) 2006-01-27 2006-12-20 光电子半导体芯片

Country Status (8)

Country Link
US (1) US8581280B2 (cg-RX-API-DMAC10.html)
EP (1) EP1977457B1 (cg-RX-API-DMAC10.html)
JP (1) JP2009524918A (cg-RX-API-DMAC10.html)
KR (1) KR20080091249A (cg-RX-API-DMAC10.html)
CN (2) CN101395725B (cg-RX-API-DMAC10.html)
DE (1) DE102006015788A1 (cg-RX-API-DMAC10.html)
TW (1) TWI350597B (cg-RX-API-DMAC10.html)
WO (1) WO2007085218A1 (cg-RX-API-DMAC10.html)

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DE102006061167A1 (de) 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102007027641B4 (de) * 2007-06-15 2015-12-03 Huga Optotech Inc. Verfahren zum Herstellen einer Licht emittierenden Diode
DE102007035687A1 (de) * 2007-07-30 2009-02-05 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einem Schichtenstapel
JP5126884B2 (ja) * 2008-01-16 2013-01-23 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
DE102008006987A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
CN102047454B (zh) * 2008-04-16 2013-04-10 Lg伊诺特有限公司 发光器件及其制造方法
DE102008052405A1 (de) * 2008-10-21 2010-04-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP2010192835A (ja) * 2009-02-20 2010-09-02 Showa Denko Kk 発光ダイオード及びその製造方法、並びに発光ダイオードランプ
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2012004476A (ja) * 2010-06-21 2012-01-05 Toshiba Corp 発光装置
DE102010031237A1 (de) 2010-07-12 2012-01-12 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010038405A1 (de) 2010-07-26 2012-01-26 Osram Opto Semiconductors Gmbh Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements
DE102010039382A1 (de) 2010-08-17 2012-02-23 Osram Opto Semiconductors Gmbh Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements
KR101274651B1 (ko) 2010-11-30 2013-06-12 엘지디스플레이 주식회사 발광 다이오드 및 이의 제조 방법
US8802461B2 (en) * 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
JP6056150B2 (ja) * 2011-04-08 2017-01-11 日亜化学工業株式会社 半導体発光素子
DE102011080458A1 (de) 2011-08-04 2013-02-07 Osram Opto Semiconductors Gmbh Optoelektronische anordnung und verfahren zur herstellung einer optoelektronischen anordnung
DE102011087543A1 (de) 2011-12-01 2013-06-06 Osram Opto Semiconductors Gmbh Optoelektronische anordnung
DE102012200416B4 (de) 2012-01-12 2018-03-01 Osram Opto Semiconductors Gmbh Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls
GB201202222D0 (en) * 2012-02-09 2012-03-28 Mled Ltd Enhanced light extraction
DE102012202102A1 (de) * 2012-02-13 2013-08-14 Osram Gmbh Leuchtvorrichtung mit Volumenstrahler-LED-Chips auf einem gemeinsamen Substrat
JP2015509669A (ja) * 2012-03-06 2015-03-30 ソラア インコーポレーテッドＳｏｒａａ Ｉｎｃ． 導波光効果を低減させる低屈折率材料層を有する発光ダイオード
US9053279B2 (en) 2013-03-14 2015-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Pattern modification with a preferred position function
JP2015162631A (ja) * 2014-02-28 2015-09-07 サンケン電気株式会社 発光素子
DE102014107555A1 (de) * 2014-05-28 2015-12-03 Osram Opto Semiconductors Gmbh Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement
DE102015103840A1 (de) * 2015-03-16 2016-09-22 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierende Baugruppe
DE102016100563B4 (de) 2016-01-14 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung und optoelektronische Leuchtvorrichtung
DE102018113573B4 (de) * 2018-06-07 2022-11-03 Semikron Elektronik Gmbh & Co. Kg Patentabteilung Diode mit einem Halbleiterkörper
DE102018115225A1 (de) * 2018-06-25 2020-01-02 Otto-Von-Guericke-Universität Magdeburg Lichtemmitierendes Halbleiterbauelement oder Halbleiterbauelementmodul

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Also Published As

Publication number Publication date
KR20080091249A (ko) 2008-10-09
JP2009524918A (ja) 2009-07-02
CN101395725A (zh) 2009-03-25
WO2007085218A1 (de) 2007-08-02
TWI350597B (en) 2011-10-11
US8581280B2 (en) 2013-11-12
US20090315048A1 (en) 2009-12-24
EP1977457A1 (de) 2008-10-08
CN101976718B (zh) 2014-06-11
DE102006015788A1 (de) 2007-09-13
CN101976718A (zh) 2011-02-16
EP1977457B1 (de) 2018-05-09
TW200737553A (en) 2007-10-01

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