CN101390209B - 通过在栅极和沟道中引起应变来增强cmos晶体管性能的方法 - Google Patents

通过在栅极和沟道中引起应变来增强cmos晶体管性能的方法 Download PDF

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Publication number
CN101390209B
CN101390209B CN2005800385018A CN200580038501A CN101390209B CN 101390209 B CN101390209 B CN 101390209B CN 2005800385018 A CN2005800385018 A CN 2005800385018A CN 200580038501 A CN200580038501 A CN 200580038501A CN 101390209 B CN101390209 B CN 101390209B
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transistor
type
transistorized
channel region
rigid layer
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CN2005800385018A
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CN101390209A (zh
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海宁·S·杨
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/794—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising conductive materials, e.g. silicided source, drain or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/796—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions having memorised stress for introducing strain in the channel regions, e.g. recrystallised polysilicon gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0174—Manufacturing their gate conductors the gate conductors being silicided
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0184—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2005800385018A 2004-11-11 2005-11-10 通过在栅极和沟道中引起应变来增强cmos晶体管性能的方法 Expired - Fee Related CN101390209B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/904,461 US20060099765A1 (en) 2004-11-11 2004-11-11 Method to enhance cmos transistor performance by inducing strain in the gate and channel
US10/904,461 2004-11-11
PCT/US2005/041051 WO2006053258A2 (en) 2004-11-11 2005-11-10 Method to enhance cmos transistor performance by inducing strain in the gate and channel

Publications (2)

Publication Number Publication Date
CN101390209A CN101390209A (zh) 2009-03-18
CN101390209B true CN101390209B (zh) 2010-09-29

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US (2) US20060099765A1 (enExample)
EP (1) EP1815506A4 (enExample)
JP (1) JP4979587B2 (enExample)
KR (1) KR101063360B1 (enExample)
CN (1) CN101390209B (enExample)
TW (1) TW200629426A (enExample)
WO (1) WO2006053258A2 (enExample)

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US7488670B2 (en) 2005-07-13 2009-02-10 Infineon Technologies Ag Direct channel stress
US20070108529A1 (en) 2005-11-14 2007-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Strained gate electrodes in semiconductor devices
US7678630B2 (en) * 2006-02-15 2010-03-16 Infineon Technologies Ag Strained semiconductor device and method of making same
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DE102006035646B3 (de) * 2006-07-31 2008-03-27 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung verformter Transistoren durch Verspannungskonservierung auf der Grundlage einer verspannten Implantationsmaske
DE102006051494B4 (de) * 2006-10-31 2009-02-05 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Ausbilden einer Halbleiterstruktur, die einen Feldeffekt-Transistor mit verspanntem Kanalgebiet umfasst
US7471548B2 (en) * 2006-12-15 2008-12-30 International Business Machines Corporation Structure of static random access memory with stress engineering for stability
US20080237733A1 (en) * 2007-03-27 2008-10-02 International Business Machines Corporation Structure and method to enhance channel stress by using optimized sti stress and nitride capping layer stress
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JP5076771B2 (ja) * 2007-09-21 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
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JP5194743B2 (ja) * 2007-11-27 2013-05-08 富士通セミコンダクター株式会社 半導体装置の製造方法
US20090142891A1 (en) * 2007-11-30 2009-06-04 International Business Machines Corporation Maskless stress memorization technique for cmos devices
DE102007057687B4 (de) * 2007-11-30 2010-07-08 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erzeugen einer Zugverformung in Transistoren
US20090179308A1 (en) * 2008-01-14 2009-07-16 Chris Stapelmann Method of Manufacturing a Semiconductor Device
DE102008007003B4 (de) * 2008-01-31 2015-03-19 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren zum selektiven Erzeugen von Verformung in einem Transistor durch eine Verspannungsgedächtnistechnik ohne Hinzufügung weiterer Lithographieschritte
JP5117883B2 (ja) * 2008-02-25 2013-01-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7767534B2 (en) * 2008-09-29 2010-08-03 Advanced Micro Devices, Inc. Methods for fabricating MOS devices having highly stressed channels
US8193049B2 (en) * 2008-12-17 2012-06-05 Intel Corporation Methods of channel stress engineering and structures formed thereby
CN102386134B (zh) * 2010-09-03 2013-12-11 中芯国际集成电路制造(上海)有限公司 制作半导体器件结构的方法
CN102403226B (zh) * 2010-09-15 2014-06-04 中国科学院微电子研究所 晶体管及其制造方法
US8952429B2 (en) * 2010-09-15 2015-02-10 Institute of Microelectronics, Chinese Academy of Sciences Transistor and method for forming the same
CN102637642B (zh) * 2011-02-12 2013-11-06 中芯国际集成电路制造(上海)有限公司 Cmos器件的制作方法
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Also Published As

Publication number Publication date
KR101063360B1 (ko) 2011-09-07
JP4979587B2 (ja) 2012-07-18
US20060099765A1 (en) 2006-05-11
EP1815506A4 (en) 2009-06-10
EP1815506A2 (en) 2007-08-08
US20070275522A1 (en) 2007-11-29
WO2006053258A3 (en) 2008-01-03
KR20070084030A (ko) 2007-08-24
CN101390209A (zh) 2009-03-18
WO2006053258A2 (en) 2006-05-18
TW200629426A (en) 2006-08-16
JP2008520110A (ja) 2008-06-12

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