CN101371358A - 具有集成静电放电保护的用于发光二极管的封装 - Google Patents

具有集成静电放电保护的用于发光二极管的封装 Download PDF

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CN101371358A
CN101371358A CNA2007800027587A CN200780002758A CN101371358A CN 101371358 A CN101371358 A CN 101371358A CN A2007800027587 A CNA2007800027587 A CN A2007800027587A CN 200780002758 A CN200780002758 A CN 200780002758A CN 101371358 A CN101371358 A CN 101371358A
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托马斯·墨菲
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Yuanxin Optoelectronics Co ltd
Epistar Corp
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract

一种封装(20)包括具有凹槽(24)的基板(26)，发光元件(28)安装于凹槽(24)内。基板(26)的表面形成封装(20)的外部表面。盖(22)可贴附到基板(26)以定义发光元件(28)安装于其中的密封区域。盖(22)对于该发光元件(28)发射的光波长是透明的。基板(26)内的静电放电保护电路(40)电学耦合到该发光元件(28)。

Description

具有集成静电放电保护的用于发光二极管的封装
技术领域
本发明涉及用于发光装置例如发光二极管的封装。
背景技术
减小发光二极管(LED)封装尺寸是需要紧凑设计的各种便携显示技术例如蜂窝电话或手持计算机的设计中的重要因素之一。传统上，LED收纳在包含占据面积远大于LED芯片本身的多个部件的封装内。如图6所示，LED芯片可以结合到导热次载具(submount)，该次载具包含静电放电(ESD)保护电路以防止对LED的损伤。LED和次载具进一步安装在热沉块上并包封在预成型热塑性透镜内，宽金属引线框延伸穿过该透镜。然而，对于某些应用，期望减小封装尺寸。
发明内容
本发明公开内容涉及用于发光装置的封装的改进。根据一个方面，该封装可包括：具有凹槽的基板，该发光元件安装于该基板内，其中该基板的表面形成该封装的外部表面。在一些实施例中，对于由该发光元件发射的光波长是透明的盖例如可以贴附到该基板以定义该发光元件收纳于其中的密封区域。该基板内的ESD保护电路可以电连接到该发光元件。
各种实施例可包括一个或多个下述特征。该封装基板例如可包括诸如硅的半导体材料。该发光元件可包括发光二极管。该基板凹槽的侧壁可具有反射涂层，其中基本上该基板凹槽的所有侧壁覆盖有反射涂层。该反射涂层可包括例如金属的高反射材料。
透明盖可气密性密封到该基板，其中该发光元件收纳在该气密性密封区域内。透明盖可包括玻璃。
该封装可包括从该凹槽延伸穿过该基板到达封装外部的导电穿通材料。结合垫可设置于该基板上，其中该发光元件通过该结合垫安装到该基板。此外，该结合垫可将发光元件电学耦合到该穿通材料。设置于该基板内的ESD保护电路可包括例如多个齐纳二极管，且可以通过该结合垫与该发光元件并联电连接。
在各种实施例中，可具有一个或多个下述优点。将ESD保护电路和电学穿通连接结合在该基板内可以减小封装尺寸。此外，该基板可包括薄膜，该发光元件支撑在该薄膜上，从而提供低的热阻用于改善的热传递。此外，将ESD保护电路、穿通连接和次载具组合在一个封装中可以减小分别组装的部件的数目。
基板凹槽的涂覆金属的侧壁有助于将发光元件发射的散射光导向透明盖并从封装引出。通过将更多的散射光引出该封装，装置的效率可以提高。将元件安装在包含涂覆金属的侧壁的凹槽内，这使得该封装可用作发光元件的反射器和收容器。
通过将发光元件包封在气密性密封区域内，包封的装置的可靠性和寿命可以提高。
这种封装可以用作例如用于移动电话和装置内的照相机的LED闪光灯。小的封装产生附加可用空间，这可以减小移动装置的尺寸。此外，具有可视显示器的移动装置可以使用多个这种封装作为需要紧密包装光元件的显示器背光。类似地，多个封装可以组合以提供高分辨率大面积的符号和显示器。
另一应用可包括使用多个封装作为汽车刹车灯和头灯。除了紧密包装的益处之外，该薄膜改善了从装置的热传递。
本发明的一个或多个实施例的细节在附图和下述说明书中描述。本发明的其他特征和优点将通过说明书和附图以及通过权利要求书变得显而易见。
附图说明
图1说明根据本发明一个实施例的光学封装的断面图。
图2至4说明图1的封装的各种细节。
图5说明LED和ESD电路的电路示意图。
图6说明已知的封装布置。
不同附图中的相同参考符号表示相同部件。
具体实施方式
如图1所示，封装20包括盖22、凹槽24和基板26。一个或多个光电装置可以安装在凹槽24内位于基板26和盖22之间。在该具体实施例中，该光电装置为发光二极管(LED)28。
基板26例如可包括诸如硅的半导体材料，使得凹槽24可以通过已知蚀刻工艺形成。各向异性湿法蚀刻溶液例如氢氧化钾可用于形成倾斜的侧壁30。在图1的实施例中，凹槽24的至少一个侧壁30倾斜约54.7°的角度β。在其他实施例中，侧壁30的角度可以不同。蚀刻工艺留下薄膜25，LED 28可以被支撑在薄膜25上。侧壁30可以涂覆有例如金属的材料，其作为反射面32以将从LED 28出射的杂散光重新导向盖22。
盖22应包括例如玻璃或硅的材料，至少对于LED 28发射的特定光波长(或者波段)是透明的。优选地，盖22置于整个凹槽24上方并覆盖凹槽24。如图2所示，金属环34围绕凹槽24，可形成于基板26的表面上。当置于整个凹槽24上方的盖22通过例如焊料回流焊(reflow)工艺熔合到金属环34时，可以形成气密性密封。
LED 28通过例如将该装置焊接在结合垫35a和35b上而可以安装在凹槽24内，结合垫35a和35b被沉积且图案化于凹槽24底部(见图1-2)。优选地，结合垫35a和35b包括例如金属的导电材料。如图1所示，结合垫35a和35b可以设置于薄膜25的表面的一部分上，其包括形成于薄膜25内的导电穿通(feed-through)材料38。导电穿通材料38提供了从LED 28以及结合垫35a和35b通过基板26到达封装外部的电学接触。备选地，结合布线或其他电连接可以设置成将LED 28连接到导电穿通材料38。导电穿通材料38例如可以使用电镀穿通金属化来设置，并使得LED 28气密性密封于该封装内。在具体实施例中，气密性密封通孔(through-hole)包括提供粘合层、镀覆基底、穿通金属化、扩散阻挡层、润湿层、以及例如包括贵金属的抗氧化阻挡层。在期望改善封装与外部支撑之间的热传递的应用中，金属垫39a可设置于与凹槽24相对的一侧上的封装外部上(见图4)。此外，金属垫39b可覆盖并电连接到导电穿通材料38并且提供改善的到外部支撑的热传递。
为了提供保护以免由于过量电学电荷造成的对LED 28的损伤，例如通过磷和硼扩散工艺，静电放电(ESD)保护电路40可以形成于基板26的薄膜25区域内(见图2)。优选地，ESD电路40通过结合垫35a、35b而与LED28并联连接。在本实施例中，例如，ESD电路40包括两个背对背配置的齐纳二极管40a、40b。图5示出连接到LED 28和外部电压源42的ESD电路的电路图。当过量电学电荷跨过LED 28形成的电压(V)超过阈值电压时，ESD电路40将电压(V)钳位在钳位电压并从LED 28转移电流(Is)。阈值电压和钳位电压是由反向偏置下齐纳二极管的击穿电压和正向偏置下齐纳二极管的阈值电压来确定。
已经描述了本发明的多个实施例。不过将理解，可以进行各种调整而不背离本发明的精神和范围。相应地，其他实施例落在下述权利要求的范围之内。

Claims (21)

1.一种封装，包括
包括凹槽的基板；
安装到所述基板位于所述凹槽内的发光元件，其中所述基板的表面形成所述封装的外部表面；以及
位于所述基板内的静电放电保护电路，其中所述静电放电保护电路电连接到所述发光元件。
2.如权利要求1所述的封装，其中盖贴附到所述基板以定义所述发光元件收纳于其中的区域，且其中至少部分所述盖对于所述发光元件调适发射的光波长是透明的。
3.如权利要求2所述的封装，其中透明盖气密性密封到所述基板。
4.如权利要求2所述的封装，其中透明盖包括玻璃。
5.如权利要求2所述的封装，其中所述发光元件气密性密封在所述封装内。
6.如权利要求1所述的封装，其中所述发光元件包括发光二极管。
7.如权利要求1所述的封装，其中所述凹槽的侧壁包括反射涂层。
8.如权利要求7所述的封装，其中所述反射涂层基本上覆盖所述侧壁的所有表面。
9.如权利要求7所述的封装，其中所述反射涂层包括金属。
10.如权利要求1所述的封装，其中导电穿通材料从所述凹槽延伸穿过所述基板到达所述封装的外部。
11.如权利要求10所述的封装，其中所述穿通材料电连接到所述发光元件。
12.如权利要求10所述的封装，包括金属垫，所述金属垫位于所述基板的外部表面上并电学耦合到所述穿通材料。
13.如权利要求1所述的封装，其中所述静电放电保护电路包括多个齐纳二极管。
14.如权利要求1所述的封装，其中所述基板包括半导体材料。
15.如权利要求1所述的封装，其中所述基板包括硅。
16.如权利要求1所述的封装，包括位于所述基板上的结合垫，其中所述发光元件通过结合垫安装到所述基板。
17.如权利要求1所述的封装，其中所述静电放电保护电路通过结合垫与所述发光元件并联电连接。
18.如权利要求1所述的封装，其中所述发光元件支撑在薄膜上。
19.一种封装，包括：
包括凹槽的基板，其中所述基板包括半导体材料且所述凹槽的侧壁包括反射涂层；
安装到所述基板位于所述凹槽内的发光元件，其中所述基板的表面形成所述封装的外部表面；
贴附到所述基板以定义所述发光元件收纳于其中的气密性密封区域的盖，其中至少部分所述盖对于所述发光元件被调适发射的光波长是透明的；以及
位于所述基板内的静电放电保护电路，其中所述静电放电保护电路电连接到所述发光元件。
20.如权利要求19所述的封装，其中所述静电放电保护电路包括多个齐纳二极管。
21.如权利要求19所述的封装，其中所述基板包括硅。
CN2007800027587A 2006-01-20 2007-01-16 具有集成静电放电保护的用于发光二极管的封装 Active CN101371358B (zh)

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US11/336,094 US7528422B2 (en) 2006-01-20 2006-01-20 Package for a light emitting element with integrated electrostatic discharge protection
PCT/IB2007/000543 WO2007083244A2 (en) 2006-01-20 2007-01-16 Package for a light emitting diode with integrated electrostatic discharge protection

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CN103915543A (zh) * 2013-01-08 2014-07-09 Lg伊诺特有限公司 发光器件封装
CN104752579A (zh) * 2013-12-25 2015-07-01 常州欧密格光电科技有限公司 超薄高效能Flash LED元件及其制备工艺

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