CN104752579A - 超薄高效能Flash LED元件及其制备工艺 - Google Patents
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Abstract
本发明涉及一种超薄高效能Flash LED元件及其制备工艺，包括支架和LED芯片，还包括白色反射框架，所述支架由金属制成，所述LED芯片与支架一面固定连接，所述LED芯片四周被白色反射框架完全包围，该白色反射框架与支架固连。本发明提供一种散热效果好、光效高的超薄高效能Flash LED元件及其制备工艺。
Description
技术领域
本发明涉及一种超薄高效能Flash LED元件及其制备工艺，尤其涉及一种应用于摄像头闪光灯的Flash LED元件。
背景技术
百万像素拍照手机已逐渐成为市场主流趋势，其照相功能越来越强，拍照功能已不仅仅是种摆设。此外，一些便携式媒体播放器也开始增加百万像素以上的摄像头，自带了拍照功能。与此同时，与百万像素摄像头配合，Flash LED作为闪光灯，在一定距离内对成像效果的提高确实有明显作用。在这种大趋势下，越来越多的手机、PMP设计人员在自己的设计中加入了Flash LED的闪光灯应用。
（1）现有的散热材料结构:以前人们就注意到白光LED发光效率是随着温度的升高而下降的,并且认为温度的升高使蓝光芯片的发射波长红移,这样芯片的发射波长和荧光粉的激发波长越来越不匹配,所以降低了白光LED的发光效率。我们得出,即使不存在波长匹配的问题,白光LED的发光效率也会随着温度的升高而下降。
发光效率随着温度升高而减小的原因从理论上分析如下:根据VanRoosbrock-Shockley关系,物体的发射率为：
L(ν)≈8πν2n2α(ν)exp(-hν/kBT)/c2(1)，
n是折射率,α(ν)是吸收系数。
对于电致发光的LED结型半导体，频率为ν的光子发射率为：
L(ν)=nunlWem=ni 2We(2)，
nu是上能级被占据的电子态密度,nl是下能级的空穴态密度,ni是本征激发载流子密度。式(1)、(2)联立得为单位体积辐射跃迁几率
Wem=8πν2n2α(ν)exp(-hν/kBT)/(c2ni 2)(3)，
本征激发载流子密度的平方：
ni 2=2.32×1030(mp 3mn 3/m0)3/2T3exp(-Eg/kBT)(4)，
联立式(3)(4)得单位体积辐射跃迁几率：
Wem=3.45×10-30πν2n2α(ν)(mp 3mn 3/m0)-3/2·exp[(Eg-hν)/kBT]·1/(T3c2)∝exp[(Eg-hν)/kBT]/T3(5)，
由公式(5)看出频率为ν的光子辐射跃迁几率是温度的减函数。也就是温度的升高降低了辐射复合率,因此发光效率也会降低。
简单分析如图1的电子能带图,在温度较低时,电子占据导带底部的量子态,随着温度的升高,电子能量也会升高,电子就会占据导带中能量高些的量子态。如图1所示,导带中小矩形K1是低温下电子占据较低的量子态,大矩形K2是高温下电子占据较高的量子态。随着温度的升高,电子受到热激发跃迁到较高能态,电子占据的量子态也由(-K1,K1)范围扩大为(-K2,K2)。GaN基蓝光芯片发光是直接复合发光,其电子跃迁的选择定律为:k′=k。由图1上可以看出电子占据量子态范围小的(-K1,K1)满足选择定律的几率更大,发生辐射复合的几率也大。电子占据量子态范围大的(-K2K2)满足选择定律的几率相对小,发生辐射复合的几率也小。因此温度的升高降低了辐射复合率,从而发光效率也会降低。
故不涂荧光粉的蓝光芯片的发光效率随着温度升高是减小,因此,由蓝光芯片与涂覆其上的荧光粉所转化成白光的发光效率也会随着温度的升高而下降。所以,白光发光效率随着温度升高而下降,就不仅仅是以前人们认为的芯片的发射波长和荧光粉的激发波长不匹配造成的,还包括有芯片本身的发光效率随着温度升高而下降所造成的。
现行市面上小型的2016Flash LED补光灯（2016:一般业界统称2.0X1.6mm尺寸）,皆是以陶瓷基板作为支架作为LED封装,一般采用氧化铝陶瓷基板和氮化铝陶瓷基板，其热导率分别为24W/mK和170W/mK，散热效果差，且其价格昂贵且生产工艺流程复杂。
然而，ASTM标准牌号C19400和C19200的铜合金的热导率为350W/mK，热导率高,代表芯片内部散热快,芯片发光效率才会高（芯片内部温度每上升25℃,效率约下降10%），具有明显优越的散热效果。
现有的反射框架材质均为硅胶材质+TiO2粉,其反射率为93%，反射效果较差。
发明内容
本发明的目的是克服现有技术存在的缺陷，提供一种散热效果好、光效高的超薄高效能Flash LED元件及其制备工艺。
本发明解决其技术问题所采用的技术方案是：一种超薄高效能FlashLED元件，包括支架和LED芯片，还包括白色反射框架，所述支架由金属制成，所述LED芯片与支架一面固定连接，所述LED芯片四周被白色反射框架完全包围，该白色反射框架与支架固连。
所述支架的与LED芯片连接的一面上具有镀银层。
所述支架由铜合金制成。
所述铜合金为ASTM标准牌号C19400和C19200。
所述白色反射框架由PCT、PPA或环氧树脂制成。
所述白色反射框架为矩形框架。
该元件呈矩形，其长为2.0±0.3mm，宽为1.6±0.3mm。
一种上述的超薄高效能Flash LED元件的制备工艺，步骤如下：
a、准备原材料：铜合金金属支架、白色反射框架和LED芯片，且将白色反射框架与铜合金金属支架固定连接；
b、固晶：将LED芯片通过固晶胶贴附在铜合金金属支架上；
c、烘烤：通过烘烤将LED芯片固定在铜合金金属支架上；
d、焊线：将LED芯片电极通过金线导通在铜合金金属支架上；
e、点胶：将荧光粉和硅胶混合后，点滴在铜合金金属支架上；
f、烘烤：通过烘烤将硅胶固化；
g、冲切：将集成的成品冲切成成品散粒进行测试；
h、测试：将产品按客户需求分类；
i、包装：将已经分好类的产品包装起来。
所述白色反射框架与铜合金金属支架通过注塑成一整体。
本发明的有益效果：本发明解决了背景技术中存在的缺陷，采用铜合金作为制备支架的材料，加工简单、价格远低于陶瓷基板，散热效果好，能有效防止LED芯片的发光效率随着温度升高而下降；此外，采用PCT或PPA作为制备白色反射框架的材料，其反射率为98%；结合上述技术特征，本产品的光效可提升40%。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细的说明。
图1是本发明的优选实施例的结构示意图；
图2是图1的A-A剖视图；
图3电子能带图。
具体实施方式
如图1、2所示的一种超薄高效能Flash LED元件，包括支架1、LED芯片2和白色反射框架3。所述支架1由铜合金制成，该铜合金为ASTM标准牌号C19400和C19200。
所述LED芯片2与支架1一面固定连接，所述支架1的与LED芯片2连接的一面上具有镀银层。所述LED芯片2四周被白色反射框架3完全包围，该白色反射框架3与支架1固连。所述白色反射框架3为矩形框架，其由PCT、PPA或环氧树脂制成。
本超薄高效能Flash LED元件呈矩形，其长为2.0±0.3mm，宽为1.6±0.3mm，优选：长2.0mm，宽1.6mm。
一种上述超薄高效能Flash LED元件的制备工艺，步骤如下：
a、准备原材料：铜合金金属支架1、白色反射框架3和LED芯片2，白色反射框架3与铜合金金属支架1通过注塑成一整体；
b、固晶：将LED芯片2通过固晶胶贴附在铜合金金属支架1上；
c、烘烤：通过烘烤将LED芯片2固定在铜合金金属支架1上；
d、焊线：将LED芯片2电极通过金线导通在铜合金金属支架1上；
e、点胶：将荧光粉和硅胶混合后，点滴在铜合金金属支架1上；
f、烘烤：通过烘烤将硅胶固化；
g、冲切：将集成的成品冲切成成品散粒进行测试；
h、测试：将产品按客户需求分类；
i、包装：将已经分好类的产品包装起来。
应当理解，以上所描述的具体实施例仅用于解释本发明，并不用于限定本发明。由本发明的精神所引伸出的显而易见的变化或变动仍处于本发明的保护范围之中。
Claims (9)
1.一种超薄高效能Flash LED元件，包括支架（1）和LED芯片（2），其特征在于：还包括白色反射框架（3），所述支架（1）由金属制成，所述LED芯片（2）与支架（1）一面固定连接，所述LED芯片（2）四周被白色反射框架（3）完全包围，该白色反射框架（3）与支架（1）固连。
2.根据权利要求1所述的超薄高效能Flash LED元件，其特征在于：所述支架（1）的与LED芯片（2）连接的一面上具有镀银层。
3.根据权利要求1所述的超薄高效能Flash LED元件，其特征在于：所述支架（1）由铜合金制成。
4.根据权利要求3所述的超薄高效能Flash LED元件，其特征在于：所述铜合金为ASTM标准牌号C19400和C19200。
5.根据权利要求1所述的超薄高效能Flash LED元件，其特征在于：所述白色反射框架（3）由PCT、PPA或环氧树脂制成。
6.根据权利要求1所述的超薄高效能Flash LED元件，其特征在于：所述白色反射框架（3）为矩形框架。
7.根据权利要求1所述的超薄高效能Flash LED元件，其特征在于：该元件呈矩形，其长为2.0±0.3mm，宽为1.6±0.3mm。
8.一种如权利要求1所述的超薄高效能Flash LED元件的制备工艺，其特征在于步骤如下：
a、准备原材料：铜合金金属支架（1）、白色反射框架（3）和LED芯片（2），且将白色反射框架（3）与铜合金金属支架（1）固定连接；
b、固晶：将LED芯片（2）通过固晶胶贴附在铜合金金属支架（1）上；
c、烘烤：通过烘烤将LED芯片（2）固定在铜合金金属支架（1）上；
d、焊线：将LED芯片（2）电极通过金线导通在铜合金金属支架（1）上；
e、点胶：将荧光粉和硅胶混合后，点滴在铜合金金属支架（1）上；
f、烘烤：通过烘烤将硅胶固化；
g、冲切：将集成的成品冲切成成品散粒进行测试；
h、测试：将产品按客户需求分类；
i、包装：将已经分好类的产品包装起来。
9.根据权利要求8所述的超薄高效能Flash LED元件的制备工艺，其特征在于：所述白色反射框架（3）与铜合金金属支架（1）通过注塑成一整体。
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| CN201310727371.5A CN104752579A (zh) | 2013-12-25 | 2013-12-25 | 超薄高效能Flash LED元件及其制备工艺 |
| PCT/CN2014/000169 WO2015096181A1 (zh) | 2013-12-25 | 2014-02-21 | 超薄高效能Flash LED 元件及其制备工艺 |
| TW103128747A TW201526308A (zh) | 2013-12-25 | 2014-08-21 | 超薄高效能Flash LED 元件及其製備工藝 |
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| CN201310727371.5A CN104752579A (zh) | 2013-12-25 | 2013-12-25 | 超薄高效能Flash LED元件及其制备工艺 |
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| CN (1) | CN104752579A (zh) |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356437A (zh) * | 2016-09-30 | 2017-01-25 | 广东晶科电子股份有限公司 | 一种白光led封装器件及其制备方法 |
| CN108461614A (zh) * | 2017-02-17 | 2018-08-28 | 隆达电子股份有限公司 | 框架、应用其的发光装置及应用其的发光装置的制作方法 |
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| JP2008016647A (ja) * | 2006-07-06 | 2008-01-24 | Sanyo Electric Co Ltd | 発光装置およびその製造方法 |
| CN201044245Y (zh) * | 2007-04-29 | 2008-04-02 | 亿光电子工业股份有限公司 | 发光二极管 |
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| CN202404341U (zh) * | 2011-11-14 | 2012-08-29 | 叶仰山 | 手持式电子装置的相机功能的闪光灯结构 |
| CN203707171U (zh) * | 2013-12-25 | 2014-07-09 | 常州欧密格光电科技有限公司 | 一种超薄高效能Flash LED 元件 |
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- 2013-12-25 CN CN201310727371.5A patent/CN104752579A/zh active Pending
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- 2014-02-21 WO PCT/CN2014/000169 patent/WO2015096181A1/zh active Application Filing
- 2014-08-21 TW TW103128747A patent/TW201526308A/zh unknown
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| CN101371358A (zh) * | 2006-01-20 | 2009-02-18 | 许密特有限公司 | 具有集成静电放电保护的用于发光二极管的封装 |
| CN101079415A (zh) * | 2006-05-08 | 2007-11-28 | 亿光电子工业股份有限公司 | 发光二极管封装结构 |
| JP2008016647A (ja) * | 2006-07-06 | 2008-01-24 | Sanyo Electric Co Ltd | 発光装置およびその製造方法 |
| CN201044245Y (zh) * | 2007-04-29 | 2008-04-02 | 亿光电子工业股份有限公司 | 发光二极管 |
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| CN106356437B (zh) * | 2016-09-30 | 2019-07-26 | 广东晶科电子股份有限公司 | 一种白光led封装器件及其制备方法 |
| CN108461614A (zh) * | 2017-02-17 | 2018-08-28 | 隆达电子股份有限公司 | 框架、应用其的发光装置及应用其的发光装置的制作方法 |
| US10475975B2 (en) | 2017-02-17 | 2019-11-12 | Lextar Electronics Corporation | Frame, light-emitting device using the same, and method for manufacturing the same |
| CN108461614B (zh) * | 2017-02-17 | 2020-01-03 | 隆达电子股份有限公司 | 框架及应用其的发光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015096181A1 (zh) | 2015-07-02 |
| TW201526308A (zh) | 2015-07-01 |
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Address after: Hutang town Wujin District Changzhou city Jiangsu province 213000 minhuang ditch South Industrial Zone Wu Nan Road No. 98 Applicant after: Jiangsu dense grid photoelectric Polytron Technologies Inc. Address before: Hutang town Wujin District Changzhou city Jiangsu province 213000 minhuang ditch South Industrial Zone Wu Nan Road No. 98 Applicant before: Amicc Opto-electronics Technology Co., Ltd. |
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Correction item: Applicant Correct: JIANGSU AMICC OPTOELECTRONICS TECHNOLOGY CO., LTD. False: Jiangsu dense grid photoelectric Polytron Technologies Inc. Number: 50 Volume: 32 |
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Application publication date: 20150701 |