CN106356437A - 一种白光led封装器件及其制备方法 - Google Patents

一种白光led封装器件及其制备方法 Download PDF

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CN106356437A
CN106356437A CN201610876595.6A CN201610876595A CN106356437A CN 106356437 A CN106356437 A CN 106356437A CN 201610876595 A CN201610876595 A CN 201610876595A CN 106356437 A CN106356437 A CN 106356437A
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light led
led chip
reflector plate
blue light
copper sheet
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CN106356437B (zh
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万垂铭
余亮
侯宇
姜志荣
曾照明
肖国伟
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Guangdong APT Electronics Ltd
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Abstract

本发明公开了一种白光LED封装器件,包括有蓝光LED芯片、光转换层、铜片、以及在初始B‑stage状态下热固化叠合于所述铜片上的反射片;所述反射片由白色反光材料制成,所述反射片呈碗杯状;所述蓝光LED芯片置于所述反射片的杯底,所述光转换层包覆于所述蓝光LED芯片上。并且,本发明还对应公开了一种白色LED封装器件的制备方法。本发明所述的白光LED封装器件,封装出光效率高,防硫化效果佳,机械强度高;而其制备方法与传统工艺相比,制备工艺步骤少,加工简单易行,有利于在提高产品质量的基础上降低制备成本。

Description

一种白光LED封装器件及其制备方法
技术领域
本发明属于发光二极管(LED)技术领域,具体涉及一种白光LED封装器件及其制备方法。
背景技术
发光二极管(LED)因具有高光效、寿命长和无毒绿色等诸多优点,逐步进入主流照明市场,在隧道照明、景观照明、温室采光和室内照明等领域得到了越来越多的应用。
当今,LED封装的市场主流是采用PLCC支架式封装,其封装结构包括铜片、塑胶,其中,塑胶加工成碗杯状支架,通常还在碗杯的底部做银表面处理以增强反射,提高封装效率。但是,PLCC支架式封装存在以下缺陷:
(1)机械强度低;
(2)外界的污染物易渗入碗杯内的有机硅胶和底部的间隙,从而易造成镀银腐蚀;
(3)镀银层还需兼顾考虑防硫化,存在不少难题,比如,若镀银层采用防硫保护层,防硫效果较好,但是成本高、点涂工艺难度大;若采用高硬度硅胶,防硫效果一般,易造成金线断裂;若镀银层采用白色硅胶,防硫效果较好,但是加工工艺难度大。
基于LED市场的巨大潜力,为了更好地适应白光LED灯具的市场需求,国内外许多从业者一直没有停止对LED产品进行相关的研究,比如:
(1)申请号为201110359944.4的中国专利公开了一种发光二极管封装结构及其反射杯,其在侧壁和底部制作有金属反光层,但是其存在PLCC支架式封装所存在的诸多弊端;
(2)申请号为201410020728的中国专利公开了一种使用低反光的黑色EMC塑封材料达到高反光效果的LED封装工艺,即在黑色EMC支架材料表面直接增加一层反光材料,该封装工艺可使得黑色EMC材料能够实现较高的出光效率,但是很明显,其制造工艺难度也较大;
(3)申请号为201310339703.2的中国专利公开了一种发光二极管的封装工艺,支架底板上涂覆反光的涂层,并作为固晶胶,虽然本专利可以提高防硫化效果、出光效率,但是其制造工艺难度依旧很大,封装效率不高;
(4)申请号为201020700819.6的中国专利公开了一种防止硫化的贴片LED,其在荧光胶表面增加了防硫化层,从而有效地提高了产品防硫化效果,但是会降低出光效率;
(5)申请号为US 2013/0285082的美国专利公开了在倒装LED芯片的周围制作一个反光杯,以实现更高的出光效率和更低的制备成本,但是其所述的反光杯为塑胶,且无基板,存在机械强度不高、防硫化效果不佳等诸多问题;
(6)申请号为US 2013/0029439的美国专利公开了一种倒装LED芯片的制备方法,其先将发光芯片放在一个临时载板上,四周设置挡板,点涂荧光胶后再刮平,并切割成单颗,本专利所述的制备工艺存在底部焊盘电极极易污染等诸多问题。
发明内容
首先,为了便于理解本发明,先对以下名词作相应的解释:
B-stage:指树脂和固化剂发生反应,形成一种半固化的固体。
本发明为弥补现有技术的不足,一方面提供了一种白光LED封装器件,其封装出光效率高,防硫化效果佳,机械强度高,有利于在提高产品质量的基础上降低制备成本。
本发明为达到其目的,采用的技术方案如下:
一种白光LED封装器件,其特征在于:
包括有蓝光LED芯片、光转换层、铜片、以及在初始B-stage状态下热固化叠合于所述铜片上的反射片;所述反射片由白色反光材料制成,所述反射片呈碗杯状;所述蓝光LED芯片置于所述反射片的杯底,所述光转换层包覆于所述蓝光LED芯片上。
进一步的,该白光LED封装器件还包括有绝缘体,所述绝缘体将所述铜片分割成正负极区。
进一步的,所述反射片的底部开设有两个通孔。
进一步的,所述蓝光LED芯片为正装LED芯片,所述蓝光LED芯片通过分别贯穿两个所述通孔的两根金线分别与所述铜片的正负极区连接。
进一步的,所述蓝光LED芯片为倒装LED芯片,所述蓝光LED芯片的焊盘对准两个所述通孔以分别直接与所述铜片的正负极区连接。
进一步的,所述光转换层为荧光胶层。
本发明另一个方面提供了一种白光LED封装器件的制备方法,与传统工艺相比,其制备工艺步骤少,加工简单易行,有利于提高制备效率和降低制备成本,其特征在于,包括以下步骤:
S1:将由白色反光材料制成的B-stage状态下的反射片设成碗杯状,然后将蓝光LED芯片置于所述反射片的杯底;
S2:将所述反射片叠合于铜片上,二者热固化成型连接成一体;
S3:将荧光胶填覆于所述反射片的碗杯中,加热固化,使所述荧光胶固化为光转换层;
S4:切割成单颗的白光LED封装器件。
进一步的,所述步骤S1中,所述反射片设成碗杯状后,在所述反射片的底部开设有两个通孔;所述步骤S2中,所述铜片预先通过腐蚀、填充绝缘体分隔成正负极区。
进一步的,所述步骤S1中,所述蓝光LED芯片选择为正装LED芯片;所述步骤S2中,使用两根金线分别贯穿两个所述通孔,以将所述蓝光LED芯片分别与所述铜片的正负极区连接。
进一步的,所述步骤S1中,所述蓝光LED芯片选择为倒装LED芯片;所述步骤S2中,所述蓝光LED芯片的焊盘对准两个所述通孔,并分别直接与所述铜片的正负极区连接。
相对于现有技术,本发明具有以下有益技术效果:
(1)本发明提供的一种白光LED封装器件,将B-stage状态下的反射片(由白色反光材料制成)与铜片热固化叠合在一起,然后直接将蓝光LED芯片置于反射片的碗杯内,最后用光转换层封装成品,即本发明采用B-stage状态的反射片来加工制作成LED支架,从而有效地提高了LED封装的防硫化效果和封装出光效率,保证具有足够的机械强度,且蓝光LED芯片的电极不会遭受外界异物污染,进而提高了产品的质量。
(2)本发明提供的一种白光LED封装器件,属于一种新型的封装形式,其与SMD相比,体积更小,重量更轻,可直接安装在PCB板上,非常适用于薄型电子产品的组装。
(3)相对于现有技术,本发明提供的一种白光LED封装器件制备方法将LED支架的设计制作与LED封装工艺结合起来,省去了传统的PLCC支架式封装的诸多工艺步骤,制备工艺更加简单,易于加工,有利于在提高产品质量的同时降低制备成本。
附图说明
图1为本发明所述的一种白光LED封装器件(蓝光LED芯片为正装LED芯片)的制备流程示意图;
图2为本发明所述的另一种白光LED封装器件(蓝光LED芯片为倒装LED芯片)的制备流程示意图。
附图标记:
100(或200)、白光LED封装器件;101(或201)、蓝光LED芯片;102、光转换层;103、铜片;104、反射片;1041、通孔;105、绝缘体;106、金线。
具体实施方式
在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于此描述的其他方式来实施,本领域技术人员可以在不违背本发明内涵的情况下做类似推广,因此本发明不受下面公开的具体实施例的限制。
实施例1
如图1所示,本实施例公开了一种白光LED封装器件100,包括有蓝光LED芯片101、光转换层102、铜片103、以及在初始B-stage状态下热固化叠合于铜片103上的反射片104,即铜片103与反射片104的底部通过热固化作用叠合在一起。反射片104由白色反光材料制成,其中,白色反光材料主要由有机硅树脂或环氧树脂作为基材,并添加TiO2(作为反射材料)、SiO2(作为增强材料)而制成,使得反射片104具有粘接、反射等作用,其白光区域的反射率可以控制高达95%以上;反射片104呈碗杯状,蓝光LED芯片101固定置于反射片104的杯底;光转换层102包覆于蓝光LED芯片101上,以起到光转换的作用,其中,蓝光LED芯片101和光转换层102二者的表面互相粘接。
在本实施例中,该白光LED封装器件还包括有绝缘体105,绝缘体105将铜片103分割成正负极区。注意的是,铜片103需要先通过腐蚀作用分割成正负极两个区,然后再填充绝缘体105,以使得铜片103在分割成正负极区的同时又能连成一体。
在本实施例中,反射片104的底部开设有两个通孔1041,用于打线。
在本实施例中,蓝光LED芯片101选择为正装LED芯片,通过正装的焊线技术,使得蓝光LED芯片101通过分别贯穿两个通孔1041的两根金线106分别与铜片103的正负极区连接。
在本实施例中,光转换层102为荧光胶层。但是,本发明并不限于此,光转换层102还可以由其它光转换材料制成,均为本发明的等效保护范围。
本实施例还公开了白光LED封装器件100的一种制备方法,该制备方法的简略流程如图1所示,其包括以下步骤:
S1:将由白色反光材料制成的B-stage状态下的反射片104设成碗杯状,然后将蓝光LED芯片101置于反射片104的杯底;
S2:将反射片104叠合于铜片103上,二者热固化成型连接成一体;
S3:将荧光胶填覆于反射片104的碗杯中,加热固化,使荧光胶固化为光转换层102;
S4:切割成单颗的白光LED封装器件。
其中,所述步骤S1中,反射片104设成碗杯状后,在反射片104的底部开设有两个用于打线的通孔1041;所述步骤S2中,铜片103预先通过腐蚀、填充绝缘体105分隔成正负极区,再将反射片104叠合于铜片103上。
其中,所述步骤S1中,蓝光LED芯片101选择为正装LED芯片;所述步骤S2中,使用两根金线107分别贯穿两个通孔1041,以将蓝光LED芯片101分别与铜片103的正负极区连接。
实施例2
本实施例公开了另一种白光LED封装器件200,如图2所示,在结构上,其与实施例1所述的白光LED封装器件100的不同之处在于:
在本实施例中,蓝光LED芯片201选择为倒装LED芯片,蓝光LED芯片201的焊盘对准两个通孔1041以分别直接与铜片103的正负极区连接。
本实施例还公开了白光LED封装器件200的一种制备方法,该制备方法的简略流程如图2所示,其与实施例1所述的白光LED封装器件100的制备方法的不同之处在于:
所述步骤S1中,蓝光LED芯片201选择为倒装LED芯片;所述步骤S2中,蓝光LED芯片201的焊盘对准两个通孔1041,并分别直接与铜片103的正负极区连接。
本实施例所述的白光LED封装器件200的其它结构、其它制备方法与实施例1完全相同,在此不再赘述。
以上所述,仅是本发明的较佳实施例而已,并非对本发明做任何形式上的限制,故凡未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。

Claims (10)

1.一种白光LED封装器件,其特征在于:
包括有蓝光LED芯片、光转换层、铜片、以及在初始B-stage状态下热固化叠合于所述铜片上的反射片;所述反射片由白色反光材料制成,所述反射片呈碗杯状;所述蓝光LED芯片置于所述反射片的杯底,所述光转换层包覆于所述蓝光LED芯片上。
2.根据权利要求1所述的白光LED封装器件,其特征在于:该白光LED封装器件还包括有绝缘体,所述绝缘体将所述铜片分割成正负极区。
3.根据权利要求2所述的白光LED封装器件,其特征在于:所述反射片的底部开设有两个通孔。
4.根据权利要求3所述的白光LED封装器件,其特征在于:所述蓝光LED芯片为正装LED芯片,所述蓝光LED芯片通过分别贯穿两个所述通孔的两根金线分别与所述铜片的正负极区连接。
5.根据权利要求3所述的白光LED封装器件,其特征在于:所述蓝光LED芯片为倒装LED芯片,所述蓝光LED芯片的焊盘对准两个所述通孔以分别直接与所述铜片的正负极区连接。
6.根据权利要求1~5任一项所述的白光LED封装器件,其特征在于:所述光转换层为荧光胶层。
7.一种如权利要求1~6任一项所述的白光LED封装器件的制备方法,其特征在于,包括以下步骤:
S1:将由白色反光材料制成的B-stage状态下的反射片设成碗杯状,然后将蓝光LED芯片置于所述反射片的杯底;
S2:将所述反射片叠合于铜片上,二者热固化成型连接成一体;
S3:将荧光胶填覆于所述反射片的碗杯中,加热固化,使所述荧光胶固化为光转换层;
S4:切割成单颗的白光LED封装器件。
8.根据权利要求7所述的白光LED封装器件,其特征在于:所述步骤S1中,所述反射片设成碗杯状后,在所述反射片的底部开设有两个通孔;所述步骤S2中,所述铜片预先通过腐蚀、填充绝缘体分隔成正负极区。
9.根据权利要求8所述的白光LED封装器件,其特征在于:所述步骤S1中,所述蓝光LED芯片选择为正装LED芯片;所述步骤S2中,使用两根金线分别贯穿两个所述通孔,以将所述蓝光LED芯片分别与所述铜片的正负极区连接。
10.根据权利要求8所述的白光LED封装器件,其特征在于:所述步骤S1中,所述蓝光LED芯片选择为倒装LED芯片;所述步骤S2中,所述蓝光LED芯片的焊盘对准两个所述通孔,并分别直接与所述铜片的正负极区连接。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281537A (zh) * 2018-03-20 2018-07-13 木林森股份有限公司 一种led灯珠的封装结构
CN111755581A (zh) * 2019-03-27 2020-10-09 隆达电子股份有限公司 发光二极管载具以及具有发光二极管载具的发光二极管封装
CN113437109A (zh) * 2021-08-30 2021-09-24 深圳市思坦科技有限公司 柔性led器件及其制造方法以及显示装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI343461B (en) * 2004-03-26 2011-06-11 Panasonic Corp Led mounting module, led module, manufacturing method of led mounting module, and manufacturing method of led module
CN102903834A (zh) * 2011-07-29 2013-01-30 信越化学工业株式会社 表面安装的发光器件
CN202888243U (zh) * 2012-09-13 2013-04-17 惠州雷曼光电科技有限公司 功率型发光二极管及发光二极管支架
CN104136191A (zh) * 2012-03-16 2014-11-05 株式会社村田制作所 密封用树脂片材的制造装置及密封用树脂片材的制造方法
CN104662100A (zh) * 2012-09-27 2015-05-27 迈图高新材料日本合同公司 光半导体元件密封用有机硅组合物以及光半导体装置
CN104752579A (zh) * 2013-12-25 2015-07-01 常州欧密格光电科技有限公司 超薄高效能Flash LED元件及其制备工艺
US20150376400A1 (en) * 2014-06-27 2015-12-31 Samsung Sdi Co., Ltd. Thermoplastic Resin Composition Having Excellent Reflectivity
CN206116449U (zh) * 2016-09-30 2017-04-19 广东晶科电子股份有限公司 一种白光led封装器件

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI343461B (en) * 2004-03-26 2011-06-11 Panasonic Corp Led mounting module, led module, manufacturing method of led mounting module, and manufacturing method of led module
CN102903834A (zh) * 2011-07-29 2013-01-30 信越化学工业株式会社 表面安装的发光器件
CN104136191A (zh) * 2012-03-16 2014-11-05 株式会社村田制作所 密封用树脂片材的制造装置及密封用树脂片材的制造方法
CN202888243U (zh) * 2012-09-13 2013-04-17 惠州雷曼光电科技有限公司 功率型发光二极管及发光二极管支架
CN104662100A (zh) * 2012-09-27 2015-05-27 迈图高新材料日本合同公司 光半导体元件密封用有机硅组合物以及光半导体装置
CN104752579A (zh) * 2013-12-25 2015-07-01 常州欧密格光电科技有限公司 超薄高效能Flash LED元件及其制备工艺
US20150376400A1 (en) * 2014-06-27 2015-12-31 Samsung Sdi Co., Ltd. Thermoplastic Resin Composition Having Excellent Reflectivity
CN206116449U (zh) * 2016-09-30 2017-04-19 广东晶科电子股份有限公司 一种白光led封装器件

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281537A (zh) * 2018-03-20 2018-07-13 木林森股份有限公司 一种led灯珠的封装结构
CN111755581A (zh) * 2019-03-27 2020-10-09 隆达电子股份有限公司 发光二极管载具以及具有发光二极管载具的发光二极管封装
CN111755581B (zh) * 2019-03-27 2022-03-15 隆达电子股份有限公司 发光二极管载具以及具有发光二极管载具的发光二极管封装
CN113437109A (zh) * 2021-08-30 2021-09-24 深圳市思坦科技有限公司 柔性led器件及其制造方法以及显示装置

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