CN104253199A - 一种led封装结构及其制作方法 - Google Patents
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Abstract
一种LED封装结构及其制作方法,涉及发光二极管技术领域。本发明结构包括封装基座、黏着层、发光二极管芯片和两根焊线。发光二极管芯片通过黏着层贴附于封装基座内,发光二极管芯片上的正负电极分别通过两根焊线与封装基座电性链接。其结构特点是,所述封装基座内、发光二极管芯片外围填充采用透光材料的第一封装胶体层,第一封装胶体层上方覆盖第二封装胶体层,第二封装胶体层中含有荧光粉物质。同现有技术相比,本发明能有效减小光衰、提高发光效率、增大光束角范围,并改善发光二极管的发光均匀度、提高光利用率。
Description
技术领域
本发明涉及发光二级管技术领域,特别是LED封装结构及其制作方法。
背景技术
发光二极管(Lighting Emitting Diode)已广泛应用于信号显示、显示器背光源、交通信号指示、户外广告显示屏以及景观照明灯领域。近年来由于以氮化物为基础的蓝色发光二极管的研制成功,使得发光二极管可以实现全色彩发光,并逐步迈向白光照明时代。白光发光二极管具有效率高、寿命长、可靠性高、环保节能、应用灵活等诸多优点,被普遍认可为第四代的照明光源,具有广阔的发展前景。目前白光LED较为成熟的,已经商业化的获得途径为在蓝光芯片上覆盖钇铝石榴石(YAG:Ce3+)荧光粉,利用蓝光芯片发出的蓝光未被吸收部分与荧光粉受蓝光激发射出的黄绿光混合形成白光。
现有技术中,参看图1,白光发光二极管的封装主要由封装基座100、黏着层110、发光二极管芯片120、两根焊线131和封装胶体层140构成,其中封装胶体层140中均匀混合有一定比例的荧光粉141。封装胶体层140为环氧树脂、硅胶等材质,而荧光粉141为YAG等黄色荧光物质。
在目前主流的白光LED制备工艺中,荧光粉的涂覆主要还是通过传统的点粉方式,即将荧光粉和所用硅胶按一定比例混合均匀后,点涂在LED芯片的上方及四周。但是此种封装方式具有相当的局限性,首先,此种方法制作的LED器件在长期工作过程中产生的热量会使荧光粉老化,从而使得白光二极管的亮度衰减很快,严重影响使用寿命。其次,此种方法无法保证整个荧光粉涂覆的均匀性,从而无法控制白光色区的集中度,影响了生产良率。另外,此种方法封装完成的LED光源,其光束角仅约为110-120度,能够应用于照明场合,但光束角不够大,光能利用效率不高。
发明内容
针对上述现有技术中存在的不足,本发明的目的是提供一种LED封装结构及其制作方法。它能有效减小光衰、提高发光效率、增大光束角范围,并改善发光二级管的发光均匀度、提高光利用率。
为了达到上述发明目的,本发明的技术方案以如下方式实现:
一种LED封装结构,它包括封装基座、黏着层、发光二极管芯片和两根焊线。发光二极管芯片通过黏着层贴附于封装基座内,发光二极管芯片上的正负电极分别通过两根焊线与封装基座电性链接。其结构特点是,所述封装基座内、发光二极管芯片外围填充采用透光材料的第一封装胶体层,第一封装胶体层上方覆盖第二封装胶体层,第二封装胶体层中含有荧光粉物质。
在上述LED封装结构中,所述黏着层采用透明绝缘胶、银胶或者锡膏材料。
在上述LED封装结构中,所述第一封装胶体层和第二封装胶体层采用环氧树脂或者硅胶材料,第二封装胶体层中的封装胶体物质与荧光粉物质的比例为:10:0.1-10:2。
如上所述LED封装结构的制作方法,包括以下步骤:
1)提供LED封装基座;
2)在封装基座底层内表面上涂覆黏着层;
3)将发光二极管芯片附着于黏着层上,并经过高温烘烤固化;
4)通过点胶工艺,在发光二极管芯片外围形成第一封装胶体层,经过高温烘烤固化成型;
5)再通过点胶工艺,在第一封装胶体层上表面形成第二封装胶体层,并经过高温烘烤成型。
在上述制作方法中,所述步骤3)、4)、5)中的高温烘烤温度为80-200℃,烘烤时间为0.5-3小时。
本发明由于采用了上述结构及其制作方法,使用双层封装胶体层结构,使混合有荧光粉的第二封装胶体层远离发光二极管芯片,提高了LED激发荧光粉的效率,减小了光衰。同时,本发明采用在第二封装胶体层中混合荧光粉,使荧光粉涂覆均匀性更佳,封装光色分布更加容易控制。另外,混合了荧光粉的第二封装胶体层与发光二极管芯片距离的拉大使封装完成的LED器件发光角度更大,可以实现大角度发光,改善了发光均匀度,提高了光的利用率。
下面结合附图和具体实施方式对本发明做进一步说明。
附图说明
图1是现有技术中的LED封装结构示意图;
图2是本发明的LED封装结构示意图。
具体实施方式
参看图2,本发明LED封装结构,包括封装基座100、黏着层110、发光二极管芯片120和两根焊线131。发光二极管芯片120通过黏着层110贴附于封装基座100内,发光二极管芯片120上的正负电极分别通过两根焊线131与封装基座100电性链接。封装基座100内、发光二极管芯片120外围填充采用透光材料的第一封装胶体层150,第一封装胶体层150上方覆盖第二封装胶体层151,第二封装胶体层151中含有荧光粉141。黏着层110采用透明绝缘胶、银胶或者锡膏材料。第一封装胶体层150和第二封装胶体层151采用环氧树脂或者硅胶材料,第二封装胶体层151中的封装胶体物质与荧光粉141物质的比例为:10:0.1-10:2。
本发明LED封装结构的制作方法,包括以下步骤:
实施例一:
1)提供LED封装基座100;
2)涂覆一黏着层110于封装基座100上,黏着层110为透明绝缘胶、银胶或者锡膏等材料;
3)将发光二极管芯片120通过黏着层110固定于封装基座100上,并经过高温烘烤固化,高温固化温度为80℃,烘烤时间为0.5小时;
4)通过点胶工艺,在发光二极管芯片120表面形成第一封装胶体层150,经过高温烘烤固化成型,高温固化温度为80℃,烘烤时间为0.5小时;
5)再通过点胶工艺,在第一封装胶体层150表面形成第二封装胶体层151,并经过高温烘烤成型,高温固化温度为80℃,烘烤时间为0.5小时,第二封装胶体层151中混合有的荧光粉材料,封装胶体与荧光粉的比例为10:0.1。
实施例二:
1)提供LED封装基座100;
2)涂覆一黏着层110于封装基座100上,黏着层110为透明绝缘胶、银胶或锡膏等材料;
3)将发光二极管芯片120通过黏着层110固定于封装基座100上,并经过高温烘烤固化,高温固化温度为150℃,烘烤时间为1.5小时;
4)通过点胶工艺,在发光二极管芯片120表面形成第一封装胶体层150,经过高温烘烤固化成型,高温固化温度为150℃,烘烤时间为1.5小时;
5)再通过点胶工艺,在第一封装胶体层150表面形成第二封装胶体层151,并经过高温烘烤成型,高温固化温度为150℃,烘烤时间为1.5小时,第二封装胶体层151中混合有的荧光粉材料,封装胶体与荧光粉的比例为10:0.3。
实施例三:
1)提供LED封装基座100;
2)涂覆一黏着层110于封装基座100上,黏着层110为透明绝缘胶、银胶或锡膏等材料;
3)将发光二极管芯片120通过黏着层110固定于封装基座100上,并经过高温烘烤固化,高温固化温度为200℃,烘烤时间为3小时;
4)通过点胶工艺,在发光二极管芯片120表面形成第一封装胶体层150,经过高温烘烤固化成型,高温固化温度为200℃,烘烤时间为3小时;
5)再通过点胶工艺,在第一封装胶体层150表面形成第二封装胶体层151,并经过高温烘烤成型,高温固化温度为200℃,烘烤时间为3小时,第二封装胶体层151中混合有的荧光粉材料,封装胶体与荧光粉的比例为10:2。
Claims (5)
1.一种LED封装结构,它包括封装基座(100)、黏着层(110)、发光二极管芯片(120)和两根焊线(131),发光二极管芯片(120)通过黏着层(110)贴附于封装基座(100)内,发光二极管芯片(120)上的正负电极分别通过两根焊线(131)与封装基座(100)电性链接,其特征在于,所述封装基座(100)内、发光二极管芯片(120)外围填充采用透光材料的第一封装胶体层(150),第一封装胶体层(150)上方覆盖第二封装胶体层(151),第二封装胶体层(151)中含有荧光粉(141)。
2.根据权利要求1所述的LED封装结构,其特征在于,所述黏着层(110)采用透明绝缘胶、银胶或者锡膏材料。
3.根据权利要求1或2所述的LED封装结构,其特征在于,所述第一封装胶体层(150)和第二封装胶体层(151)采用环氧树脂或者硅胶材料,第二封装胶体层(151)中的封装胶体物质与荧光粉(141)物质的比例为:10:0.1-10:2。
4.如权利要求1所述LED封装结构的制作方法,包括以下步骤:
1)提供LED封装基座(100);
2)在封装基座(100)底层内表面上涂覆黏着层(110);
3)将发光二极管芯片(120)附着于黏着层(110)上,并经过高温烘烤固化;
4)通过点胶工艺,在发光二极管芯片(120)外围形成第一封装胶体层(150),经过高温烘烤固化成型;
5)再通过点胶工艺,在第一封装胶体层(150)上表面形成第二封装胶体层(151),并经过高温烘烤成型。
5.根据权利要求4所述的制作方法,其特征在于:所述步骤3)、4)、5)中的高温烘烤温度为80-200℃,烘烤时间为0.5-3小时。
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