CN101350304A - 寄生npn晶体管制造方法及结构 - Google Patents
寄生npn晶体管制造方法及结构 Download PDFInfo
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- CN101350304A CN101350304A CNA2007100939541A CN200710093954A CN101350304A CN 101350304 A CN101350304 A CN 101350304A CN A2007100939541 A CNA2007100939541 A CN A2007100939541A CN 200710093954 A CN200710093954 A CN 200710093954A CN 101350304 A CN101350304 A CN 101350304A
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- npn transistor
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
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Priority Applications (1)
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CN2007100939541A CN101350304B (zh) | 2007-07-17 | 2007-07-17 | 寄生npn晶体管制造方法及结构 |
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CN2007100939541A CN101350304B (zh) | 2007-07-17 | 2007-07-17 | 寄生npn晶体管制造方法及结构 |
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CN101350304A true CN101350304A (zh) | 2009-01-21 |
CN101350304B CN101350304B (zh) | 2010-09-29 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102737970A (zh) * | 2011-04-01 | 2012-10-17 | 无锡华润上华半导体有限公司 | 半导体器件及其栅介质层制造方法 |
CN102820332A (zh) * | 2011-06-08 | 2012-12-12 | 无锡华润上华半导体有限公司 | 与mos管集成的垂直型双极结型晶体管及其制备方法 |
WO2013174177A1 (zh) * | 2012-05-25 | 2013-11-28 | 杭州士兰集成电路有限公司 | 高压bcd工艺中高压器件的隔离结构及其制造方法 |
CN116884832A (zh) * | 2023-09-06 | 2023-10-13 | 合肥晶合集成电路股份有限公司 | 半导体器件及其制作方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0451423A1 (en) * | 1990-04-10 | 1991-10-16 | International Business Machines Corporation | Vertical isolated-collector PNP transistor structure |
DE69320464T2 (de) * | 1992-03-10 | 1998-12-24 | Analog Devices Inc., Norwood, Mass. | Schaltungsanordnung zur kontrolle der sättigung eines transistors. |
CN1790737A (zh) * | 2004-12-15 | 2006-06-21 | 上海华虹Nec电子有限公司 | 一种igbt及其制造方法 |
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2007
- 2007-07-17 CN CN2007100939541A patent/CN101350304B/zh active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102737970A (zh) * | 2011-04-01 | 2012-10-17 | 无锡华润上华半导体有限公司 | 半导体器件及其栅介质层制造方法 |
CN102737970B (zh) * | 2011-04-01 | 2015-04-22 | 无锡华润上华半导体有限公司 | 半导体器件及其栅介质层制造方法 |
CN102820332A (zh) * | 2011-06-08 | 2012-12-12 | 无锡华润上华半导体有限公司 | 与mos管集成的垂直型双极结型晶体管及其制备方法 |
CN102820332B (zh) * | 2011-06-08 | 2016-04-27 | 无锡华润上华半导体有限公司 | 与mos管集成的垂直型双极结型晶体管及其制备方法 |
WO2013174177A1 (zh) * | 2012-05-25 | 2013-11-28 | 杭州士兰集成电路有限公司 | 高压bcd工艺中高压器件的隔离结构及其制造方法 |
US9824913B2 (en) | 2012-05-25 | 2017-11-21 | Hangzhou Silan Integrated Circuit Co., Ltd. | Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process |
US10770340B2 (en) | 2012-05-25 | 2020-09-08 | Hangzhou Silan Integrated Circuit Co., Ltd. | Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process |
CN116884832A (zh) * | 2023-09-06 | 2023-10-13 | 合肥晶合集成电路股份有限公司 | 半导体器件及其制作方法 |
CN116884832B (zh) * | 2023-09-06 | 2023-12-15 | 合肥晶合集成电路股份有限公司 | 半导体器件及其制作方法 |
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Publication number | Publication date |
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CN101350304B (zh) | 2010-09-29 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |