CN101345282B - 发光装置 - Google Patents

发光装置 Download PDF

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Publication number
CN101345282B
CN101345282B CN2008101357788A CN200810135778A CN101345282B CN 101345282 B CN101345282 B CN 101345282B CN 2008101357788 A CN2008101357788 A CN 2008101357788A CN 200810135778 A CN200810135778 A CN 200810135778A CN 101345282 B CN101345282 B CN 101345282B
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CN
China
Prior art keywords
fluorophor
light
diffraction
emitting device
crest
Prior art date
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CN2008101357788A
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English (en)
Chinese (zh)
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CN101345282A (zh
Inventor
大长久芳
岩崎刚
榎本公典
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Koito Manufacturing Co Ltd
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Koito Manufacturing Co Ltd
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Publication of CN101345282A publication Critical patent/CN101345282A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Landscapes

  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
CN2008101357788A 2007-07-12 2008-07-14 发光装置 Active CN101345282B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007183062 2007-07-12
JP183062/07 2007-07-12
JP2008159817A JP4999783B2 (ja) 2007-07-12 2008-06-19 発光装置
JP159817/08 2008-06-19

Publications (2)

Publication Number Publication Date
CN101345282A CN101345282A (zh) 2009-01-14
CN101345282B true CN101345282B (zh) 2011-07-06

Family

ID=40247223

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101357788A Active CN101345282B (zh) 2007-07-12 2008-07-14 发光装置

Country Status (4)

Country Link
JP (2) JP4999783B2 (ja)
KR (1) KR101021210B1 (ja)
CN (1) CN101345282B (ja)
DE (1) DE602008003955D1 (ja)

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JP4999783B2 (ja) * 2007-07-12 2012-08-15 株式会社小糸製作所 発光装置
KR20110050552A (ko) * 2008-09-04 2011-05-13 바이엘 머티리얼사이언스 아게 발광 소자 및 그의 제조 방법
JP2010251686A (ja) * 2009-03-26 2010-11-04 Harison Toshiba Lighting Corp 発光装置及びその製造方法
US20120092853A1 (en) * 2009-06-23 2012-04-19 Koito Manufacturing Co., Ltd. Light emitting module
JP5530128B2 (ja) * 2009-07-31 2014-06-25 株式会社小糸製作所 蛍光体および発光装置
JP5368913B2 (ja) * 2009-09-02 2013-12-18 スタンレー電気株式会社 発光装置およびその製造方法
JP5532769B2 (ja) * 2009-09-07 2014-06-25 日亜化学工業株式会社 蛍光体及びそれを用いた発光装置並びに蛍光体の製造方法
KR100986336B1 (ko) 2009-10-22 2010-10-08 엘지이노텍 주식회사 발광소자, 발광소자 제조방법 및 발광소자 패키지
WO2011077637A1 (ja) 2009-12-21 2011-06-30 株式会社小糸製作所 蛍光体および発光装置
WO2011092798A1 (ja) * 2010-01-27 2011-08-04 株式会社小糸製作所 蛍光体および発光装置
JP2011181793A (ja) * 2010-03-03 2011-09-15 Koito Mfg Co Ltd 発光装置
US9112122B2 (en) 2010-04-13 2015-08-18 Konica Minolta Advanced Layers, Inc. Light-emitting device and method for manufacturing same
JP5566263B2 (ja) * 2010-11-08 2014-08-06 株式会社小糸製作所 発光モジュール
JP2012114333A (ja) * 2010-11-26 2012-06-14 Koito Mfg Co Ltd 発光モジュール
CN103370394B (zh) 2011-02-14 2015-03-04 株式会社小糸制作所 荧光体的制造方法
JP2012190744A (ja) * 2011-03-14 2012-10-04 Koito Mfg Co Ltd 蛍光灯型ｌｅｄ灯具
JP2013042079A (ja) * 2011-08-19 2013-02-28 Sharp Corp 半導体発光装置
JP5794473B2 (ja) * 2011-09-08 2015-10-14 東芝ライテック株式会社 照明装置
KR101284796B1 (ko) 2011-10-05 2013-07-10 (주)포인트엔지니어링 캔 패지키 타입의 광 디바이스 제조 방법 및 이에 의해 제조된 광 디바이스
CN102386310A (zh) * 2011-11-07 2012-03-21 山西光宇半导体照明有限公司 一种led芯片支架
JP6215525B2 (ja) * 2012-10-23 2017-10-18 スタンレー電気株式会社 半導体発光装置
EP2940744A4 (en) * 2012-12-27 2016-06-29 Konica Minolta Inc PHOSPHORDISPERSION, LED DEVICE AND METHOD FOR THE PRODUCTION THEREOF
CN103219449B (zh) * 2013-04-18 2016-12-28 东莞帝光电子科技实业有限公司 Led封装结构及led封装方法
CN104576883B (zh) 2013-10-29 2018-11-16 普因特工程有限公司 芯片安装用阵列基板及其制造方法
JP6195117B2 (ja) * 2013-12-03 2017-09-13 パナソニックＩｐマネジメント株式会社 酸塩化物蛍光体、発光装置、照明装置、及び車両
JP6331389B2 (ja) * 2013-12-27 2018-05-30 日亜化学工業株式会社 発光装置
JP6282485B2 (ja) * 2014-02-24 2018-02-21 スタンレー電気株式会社 半導体発光素子
JP6378595B2 (ja) 2014-09-19 2018-08-22 東京エレクトロン株式会社 基板搬送装置
US9666558B2 (en) 2015-06-29 2017-05-30 Point Engineering Co., Ltd. Substrate for mounting a chip and chip package using the substrate
CN105642376B (zh) * 2015-12-29 2018-07-10 南京邮电大学 一种生物荧光微全分析系统芯片及其制备方法
US10541509B2 (en) * 2016-01-28 2020-01-21 Sony Corporation Semiconductor light emitting device

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* Cited by examiner, † Cited by third party
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US6501100B1 (en) * 2000-05-15 2002-12-31 General Electric Company White light emitting phosphor blend for LED devices
JP3985486B2 (ja) * 2001-10-01 2007-10-03 松下電器産業株式会社 半導体発光素子とこれを用いた発光装置
JP4032173B2 (ja) * 2002-05-31 2008-01-16 東ソー株式会社 蛍光体及び発光素子
JP4363194B2 (ja) * 2004-01-16 2009-11-11 三菱化学株式会社 蛍光体、及びそれを用いた発光装置、照明装置、ならびに画像表示装置
JP4890017B2 (ja) * 2005-01-26 2012-03-07 株式会社小糸製作所 青色発光蛍光体およびそれを用いた発光モジュール
JP2007145958A (ja) * 2005-11-25 2007-06-14 Matsushita Electric Works Ltd 蛍光体及び発光装置
US20070145879A1 (en) * 2005-12-22 2007-06-28 Abramov Vladimir S Light emitting halogen-silicate photophosphor compositions and systems
CN100590172C (zh) * 2006-07-26 2010-02-17 北京有色金属研究总院 一种含硅的led荧光粉及其制造方法和所制成的发光器件
DE102008017039A1 (de) * 2007-04-05 2008-10-09 Koito Manufacturing Co., Ltd. Leuchtstoff
JP5222600B2 (ja) * 2007-04-05 2013-06-26 株式会社小糸製作所 蛍光体
JP4999783B2 (ja) * 2007-07-12 2012-08-15 株式会社小糸製作所 発光装置

Also Published As

Publication number Publication date
JP2009038348A (ja) 2009-02-19
JP4999783B2 (ja) 2012-08-15
CN101345282A (zh) 2009-01-14
KR20090006790A (ko) 2009-01-15
JP2012186494A (ja) 2012-09-27
KR101021210B1 (ko) 2011-03-11
DE602008003955D1 (de) 2011-01-27

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