CN101325245B - 电子模块及其制造方法和应用 - Google Patents

电子模块及其制造方法和应用 Download PDF

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Publication number
CN101325245B
CN101325245B CN2008101099822A CN200810109982A CN101325245B CN 101325245 B CN101325245 B CN 101325245B CN 2008101099822 A CN2008101099822 A CN 2008101099822A CN 200810109982 A CN200810109982 A CN 200810109982A CN 101325245 B CN101325245 B CN 101325245B
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CN
China
Prior art keywords
layer
memory
electrode
electrode layer
transformation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2008101099822A
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English (en)
Chinese (zh)
Other versions
CN101325245A (zh
Inventor
T·玛蒂拉
A·阿拉斯塔洛
M·艾伦
H·瑟帕
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Valtion Teknillinen Tutkimuskeskus
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Valtion Teknillinen Tutkimuskeskus
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CN2008101099822A 2007-06-08 2008-06-06 电子模块及其制造方法和应用 Expired - Fee Related CN101325245B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20075429 2007-06-08
FI20075429A FI122011B (fi) 2007-06-08 2007-06-08 Menetelmä elektroniikkamoduulin tuottamiseksi, välituote elektroniikkamoduulin valmistamiseksi, muistielementti, painettu elektroniikkatuote, anturilaite sekä RFID-tunniste

Publications (2)

Publication Number Publication Date
CN101325245A CN101325245A (zh) 2008-12-17
CN101325245B true CN101325245B (zh) 2011-06-22

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Family Applications (1)

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CN2008101099822A Expired - Fee Related CN101325245B (zh) 2007-06-08 2008-06-06 电子模块及其制造方法和应用

Country Status (4)

Country Link
US (1) US7915097B2 (fi)
EP (1) EP2001053B1 (fi)
CN (1) CN101325245B (fi)
FI (1) FI122011B (fi)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI124372B (fi) 2009-11-13 2014-07-31 Teknologian Tutkimuskeskus Vtt Kerrostettuihin partikkeleihin liittyvä menetelmä ja tuotteet
CN104347589B (zh) * 2013-08-02 2017-04-05 中芯国际集成电路制造(上海)有限公司 一种反熔丝结构
FI20155964A (fi) * 2015-12-17 2017-06-18 Teknologian Tutkimuskeskus Vtt Oy Sähköinen komponentti, piiri, laite, komponentin valmistusmenetelmä ja toimintamenetelmä
CN112054121B (zh) * 2020-09-14 2023-04-07 清华大学 阻变存储器、阻变存储器芯片及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1714443A (zh) * 2002-12-18 2005-12-28 国际商业机器公司 自组装电子电路的方法以及由之形成的电路

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US7294366B2 (en) * 1998-09-30 2007-11-13 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition
US6541792B1 (en) * 2001-09-14 2003-04-01 Hewlett-Packard Development Company, Llp Memory device having dual tunnel junction memory cells
US6821848B2 (en) * 2002-04-02 2004-11-23 Hewlett-Packard Development Company, L.P. Tunnel-junction structures and methods
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US6807079B2 (en) 2002-11-01 2004-10-19 Hewlett-Packard Development Company, L.P. Device having a state dependent upon the state of particles dispersed in a carrier
KR100973282B1 (ko) * 2003-05-20 2010-07-30 삼성전자주식회사 나노 결정층을 구비하는 소노스 메모리 장치
DE102004003363A1 (de) * 2004-01-22 2005-08-18 Infineon Technologies Ag Verfahren zum Herstellen von Nanospeicherelementen zur Ladungsspeicherung
DE102004007633B4 (de) * 2004-02-17 2010-10-14 Qimonda Ag Speicherzelle, Halbleiter-Speicherbauelement und Verfahren zur Herstellung einer Speicherzelle
EP1723676A4 (en) * 2004-03-10 2009-04-15 Nanosys Inc MEMORY DEVICES WITH NANOCAPACITIES AND ANISOTROPIC LOADED NETWORKS
DE102004020497B8 (de) 2004-04-26 2006-06-14 Infineon Technologies Ag Verfahren zur Herstellung von Durchkontaktierungen und Halbleiterbauteil mit derartigen Durchkontaktierungen
EP1743380B1 (en) * 2004-05-06 2016-12-28 Sidense Corp. Split-channel antifuse array architecture
US20070057311A1 (en) 2004-10-29 2007-03-15 Agfa-Gevaert Conventionally printable non-volatile passive memory element and method of making thereof
US20060098485A1 (en) * 2004-10-29 2006-05-11 Agfa-Gevaert Printable non-volatile passive memory element and method of making thereof
US20060131555A1 (en) * 2004-12-22 2006-06-22 Micron Technology, Inc. Resistance variable devices with controllable channels
WO2006076603A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Printable electrical conductors
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US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
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US9011762B2 (en) 2006-07-21 2015-04-21 Valtion Teknillinen Tutkimuskeskus Method for manufacturing conductors and semiconductors
FI121562B (fi) 2006-07-21 2010-12-31 Valtion Teknillinen Menetelmä johteiden ja puolijohteiden valmistamiseksi

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CN1714443A (zh) * 2002-12-18 2005-12-28 国际商业机器公司 自组装电子电路的方法以及由之形成的电路

Also Published As

Publication number Publication date
FI122011B (fi) 2011-07-15
FI20075429A (fi) 2008-12-09
CN101325245A (zh) 2008-12-17
US7915097B2 (en) 2011-03-29
EP2001053A3 (en) 2012-03-28
US20080303583A1 (en) 2008-12-11
FI20075429A0 (fi) 2007-06-08
EP2001053B1 (en) 2014-10-29
EP2001053A2 (en) 2008-12-10

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Termination date: 20170606