CN101317273B - 电阻减小的finfet及其制造方法 - Google Patents

电阻减小的finfet及其制造方法 Download PDF

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CN101317273B
CN101317273B CN2006800440556A CN200680044055A CN101317273B CN 101317273 B CN101317273 B CN 101317273B CN 2006800440556 A CN2006800440556 A CN 2006800440556A CN 200680044055 A CN200680044055 A CN 200680044055A CN 101317273 B CN101317273 B CN 101317273B
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source
substrate
silicon
drain diffusion
finfet
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CN101317273A (zh
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J·A·曼德尔曼
程慷果
路易斯·L-C·许
杨海宁
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6219—Fin field-effect transistors [FinFET] characterised by the source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2006800440556A 2005-12-22 2006-12-05 电阻减小的finfet及其制造方法 Active CN101317273B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/316,244 2005-12-22
US11/316,244 US7531423B2 (en) 2005-12-22 2005-12-22 Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same
PCT/EP2006/069339 WO2007071555A1 (en) 2005-12-22 2006-12-05 Reduced-resistance finfets and methods of manufacturing the same

Publications (2)

Publication Number Publication Date
CN101317273A CN101317273A (zh) 2008-12-03
CN101317273B true CN101317273B (zh) 2012-08-22

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US (2) US7531423B2 (enExample)
EP (1) EP1964179B1 (enExample)
JP (1) JP4550146B2 (enExample)
KR (1) KR100992037B1 (enExample)
CN (1) CN101317273B (enExample)
AT (1) ATE441938T1 (enExample)
DE (1) DE602006008984D1 (enExample)
WO (1) WO2007071555A1 (enExample)

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US8653608B2 (en) * 2009-10-27 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET design with reduced current crowding
US8278179B2 (en) 2010-03-09 2012-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. LDD epitaxy for FinFETs
US8431995B2 (en) * 2010-05-13 2013-04-30 International Business Machines Corporation Methodology for fabricating isotropically recessed drain regions of CMOS transistors
US8716798B2 (en) 2010-05-13 2014-05-06 International Business Machines Corporation Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors
JP5837307B2 (ja) * 2011-02-07 2015-12-24 公益財団法人神奈川科学技術アカデミー 多孔性微粒子の製造方法
US8614134B2 (en) * 2011-03-21 2013-12-24 Globalfoundries Inc. Shallow source and drain architecture in an active region of a semiconductor device having a pronounced surface topography by tilted implantation
US10629900B2 (en) 2011-05-04 2020-04-21 Corning Incorporated Porous silicon compositions and devices and methods thereof
CN103137478A (zh) * 2011-11-21 2013-06-05 中芯国际集成电路制造(上海)有限公司 FinFET器件的制造方法及结构
US8637931B2 (en) 2011-12-27 2014-01-28 International Business Machines Corporation finFET with merged fins and vertical silicide
KR101894221B1 (ko) 2012-03-21 2018-10-04 삼성전자주식회사 전계 효과 트랜지스터 및 이를 포함하는 반도체 장치
US8664072B2 (en) 2012-05-30 2014-03-04 Globalfoundries Inc. Source and drain architecture in an active region of a P-channel transistor by tilted implantation
KR20140097569A (ko) * 2012-07-09 2014-08-06 도호쿠 다이가쿠 3차원 구조의 mosfet 및 그 제조 방법
US8975125B2 (en) * 2013-03-14 2015-03-10 International Business Machines Corporation Formation of bulk SiGe fin with dielectric isolation by anodization
US8859379B2 (en) 2013-03-15 2014-10-14 International Business Machines Corporation Stress enhanced finFET devices
US8940602B2 (en) 2013-04-11 2015-01-27 International Business Machines Corporation Self-aligned structure for bulk FinFET
KR102083493B1 (ko) 2013-08-02 2020-03-02 삼성전자 주식회사 반도체 소자의 제조방법
US9583590B2 (en) 2013-09-27 2017-02-28 Samsung Electronics Co., Ltd. Integrated circuit devices including FinFETs and methods of forming the same
US9711645B2 (en) * 2013-12-26 2017-07-18 International Business Machines Corporation Method and structure for multigate FinFET device epi-extension junction control by hydrogen treatment
US9391173B2 (en) * 2014-04-22 2016-07-12 International Business Machines Corporation FinFET device with vertical silicide on recessed source/drain epitaxy regions
CN105702729B (zh) * 2014-11-27 2019-01-15 中国科学院微电子研究所 半导体器件及其制造方法
CN105702725B (zh) * 2014-11-27 2018-12-11 中国科学院微电子研究所 半导体器件及其制造方法
US9741811B2 (en) 2014-12-15 2017-08-22 Samsung Electronics Co., Ltd. Integrated circuit devices including source/drain extension regions and methods of forming the same
US9666716B2 (en) 2014-12-15 2017-05-30 Sang U. Kim FinFET transistor
CN105789301B (zh) * 2014-12-25 2018-09-11 中国科学院微电子研究所 鳍式场效应晶体管、鳍结构及其制造方法
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CN108155236B (zh) * 2016-12-05 2020-08-07 上海新昇半导体科技有限公司 具有黑磷沟道层的低接触电阻率FinFET及其制备方法
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Publication number Publication date
KR20080086458A (ko) 2008-09-25
EP1964179A1 (en) 2008-09-03
EP1964179B1 (en) 2009-09-02
JP4550146B2 (ja) 2010-09-22
US20080054349A1 (en) 2008-03-06
US7531423B2 (en) 2009-05-12
US20070148836A1 (en) 2007-06-28
WO2007071555A1 (en) 2007-06-28
CN101317273A (zh) 2008-12-03
ATE441938T1 (de) 2009-09-15
KR100992037B1 (ko) 2010-11-05
JP2009521113A (ja) 2009-05-28
DE602006008984D1 (de) 2009-10-15

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