CN101276746B - 表面处理方法、蚀刻处理方法及电子装置的制造方法 - Google Patents

表面处理方法、蚀刻处理方法及电子装置的制造方法 Download PDF

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Publication number
CN101276746B
CN101276746B CN2008100963456A CN200810096345A CN101276746B CN 101276746 B CN101276746 B CN 101276746B CN 2008100963456 A CN2008100963456 A CN 2008100963456A CN 200810096345 A CN200810096345 A CN 200810096345A CN 101276746 B CN101276746 B CN 101276746B
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China
Prior art keywords
reaction product
etching
surface treatment
treatment method
record
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Expired - Fee Related
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CN2008100963456A
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English (en)
Chinese (zh)
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CN101276746A (zh
Inventor
青木克明
速水直哉
服部圭
冈幸广
金高秀海
长谷川诚
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN2008100963456A 2007-03-28 2008-03-28 表面处理方法、蚀刻处理方法及电子装置的制造方法 Expired - Fee Related CN101276746B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP084433/2007 2007-03-28
JP2007084433A JP4776575B2 (ja) 2007-03-28 2007-03-28 表面処理方法、エッチング処理方法および電子デバイスの製造方法

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Publication Number Publication Date
CN101276746A CN101276746A (zh) 2008-10-01
CN101276746B true CN101276746B (zh) 2012-04-25

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US (1) US8021565B2 (enExample)
JP (1) JP4776575B2 (enExample)
CN (1) CN101276746B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5044579B2 (ja) * 2009-01-27 2012-10-10 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
JP5629098B2 (ja) * 2010-01-20 2014-11-19 東京エレクトロン株式会社 シリコン基板上のパターン修復方法
CN102464452A (zh) * 2010-11-12 2012-05-23 鸿富锦精密工业（深圳）有限公司 玻璃制品及其制作方法
CN102097313B (zh) * 2010-11-23 2012-12-12 深圳市华星光电技术有限公司 保护层及薄膜晶体管矩阵基板的制造方法
JP5732941B2 (ja) * 2011-03-16 2015-06-10 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP2015079793A (ja) * 2013-10-15 2015-04-23 東京エレクトロン株式会社 プラズマ処理方法
KR102389744B1 (ko) * 2014-07-10 2022-04-21 도쿄엘렉트론가부시키가이샤 게르마늄 함유 반도체들 및 화합물 반도체들의 기상 산화물 제거 및 패시베이션
CN105632918A (zh) * 2014-10-30 2016-06-01 中国科学院微电子研究所 一种FinFet器件源漏外延前自然氧化层的去除方法
JP6661283B2 (ja) * 2015-05-14 2020-03-11 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理方法
US10937662B2 (en) * 2018-06-29 2021-03-02 Tokyo Electron Limited Method of isotropic etching of silicon oxide utilizing fluorocarbon chemistry
KR20210088800A (ko) * 2020-01-06 2021-07-15 삼성디스플레이 주식회사 디스플레이 장치의 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590239A (ja) 1991-09-30 1993-04-09 Fujitsu Ltd 洗浄方法及び洗浄装置
JPH0613361A (ja) * 1992-06-26 1994-01-21 Tokyo Electron Ltd 処理装置
US5679211A (en) 1995-09-18 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. Spin-on-glass etchback planarization process using an oxygen plasma to remove an etchback polymer residue
JP3594759B2 (ja) * 1997-03-19 2004-12-02 株式会社日立製作所 プラズマ処理方法
JP2002353205A (ja) * 2000-08-28 2002-12-06 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられるウェハ処理装置並びに半導体装置
WO2004095559A1 (ja) 2003-04-22 2004-11-04 Tokyo Electron Limited シリコン酸化膜の除去方法及び処理装置
JP4282616B2 (ja) * 2005-02-04 2009-06-24 株式会社東芝 半導体装置の製造方法
JP2007073840A (ja) * 2005-09-08 2007-03-22 Toshiba Corp 半導体装置の製造方法
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using

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Publication number Publication date
US8021565B2 (en) 2011-09-20
US20090000640A1 (en) 2009-01-01
JP4776575B2 (ja) 2011-09-21
JP2008244252A (ja) 2008-10-09
CN101276746A (zh) 2008-10-01

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