CN101252162A - High power LED ceramic packaging base - Google Patents
High power LED ceramic packaging base Download PDFInfo
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- CN101252162A CN101252162A CNA2008100662533A CN200810066253A CN101252162A CN 101252162 A CN101252162 A CN 101252162A CN A2008100662533 A CNA2008100662533 A CN A2008100662533A CN 200810066253 A CN200810066253 A CN 200810066253A CN 101252162 A CN101252162 A CN 101252162A
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- ceramic layer
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- heating column
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Abstract
The present invention relates to a ceramic packaging base, in particular to an SMD high power LED ceramic packaging base. The present invention consists of an upper ceramic layer and a lower ceramic layer, wherein the upper ceramic layer provides a reflection cup; the upper ceramic layer is made of LECC glass ceramic material; the upper side of the lower ceramic layer is provided with a wire bonding area and a bottom bonding pad; the base is also provided with an electric conducting through hole; the lower ceramic layer is made of high thermal conductivity alumina ceramic material or aluminum nitride ceramic material, and is used to raise the entire mechanical strength and heat dissipation performance of the packaging base. The ceramic packaging base has the advantages of raising the heat dissipation performance of the SMD high power LED ceramic packaging base, improving the problem that temperature rise causes high light decay and life-span decrease of an LED chip, strengthening the performance of LED products in resisting high/low temperature and impact, raising the reliability as well as stability of products and reducing production cost.
Description
Technical field
The present invention relates to a kind of ceramic encapsulated base, refer more particularly to a kind of SMD high-power LED ceramic package base.
Background technology
LED is as a kind of new type light source, owing to have energy-saving and environmental protection, the life-span is long, toggle speed is fast, can control luminescent spectrum and forbid making the more high conventional light source incomparable advantage of chroma obtain developing on an unprecedented scale with the size of the width of cloth.Be accompanied by the increase of LED current strength and luminous quantity, the caloric value of led chip also rises thereupon, and for high-capacity LED, 80% of the input energy all consumes with the form of heat.If these heats can not in time be discharged the external world, cause the temperature-rise effect of chip, the life-span of LED and light output all can be had a greatly reduced quality; The pyroconductivity of the epoxy encapsulation pedestal that tradition is used only is 0.47W/mK, can not satisfy the heat radiation requirement of high-power LED far away.In recent years progressively substituted by the aluminum metal substrate of high thermal conductivity, the insulated influence of organic material of aluminium base, pyroconductivity is 1～2.2W/mK, can satisfy the encapsulation requirement of part higher-wattage LED, but the thermal coefficient of expansion and the led chip of aluminium base are widely different, it is crooked that very big or packaging operation does not very easily produce heat at that time when variations in temperature, causes chip flaw and luminous efficiency and reduce.Because LED brightness increases with the increase of drive current, to the LED of high brightness more, aluminium base can't satisfy its heat radiation requirement, and ceramic encapsulated base is because of having thermal conductivity height, thermal coefficient of expansion and high-brightness LED crystal coupling, electric simulation strength height, can designing reflector and heat conduction through hole etc. and can effectively address these problems the desirable cooling base material that becomes high-capacity LED.
With regard to the ceramic encapsulated base that is applied to high-capacity LED, mainly be to constitute at present by two-layer LTCC ceramic material.Because the LTCC strength of materials is poor, and pyroconductivity only is about 3W/mk, although the thermal hole auxiliary heat dissipation that the silver filling is set is arranged in the Chip Area, vertically thermal conductivity is better for heat, but because LTCC pottery thermal conductivity is low, laterally the capacity of heat transmission is poor, so the encapsulation integral heat sink is weakened greatly.
The product structure of prior art is made of two-layer LTCC pottery as shown in Figure 1 to Figure 3, upper strata cremasteric reflex cup, and chip is installed by lower floor, and realization and bottom electrode conduct.The Chip Area is provided with downward heat conduction through hole.Wherein Chip Area 1 is used to install chip; Routing district 2 connects the electrode of chip by welding lead; Bottom land 3 is by pedestal metallization wiring, and realization is connected with two electrodes of chip; Conduct hole 4 and connect double-layer metallization wiring up and down, realize the power-on and power-off conducting, it is inner or at the edge to be located at product; Reflector 5 plays the effect of optically focused and reflection increase brightness; The high heating column 6 that is used for the auxiliary heat dissipation effect; The thermal land 7 that is used for the auxiliary heat dissipation effect.
1), epoxy encapsulation pedestal and aluminium base thermal conductivity be low the shortcoming of said structure and cause reason to comprise:, and thermal coefficient of expansion and high-capacity LED chip differ too big, cause luminous efficiency and life-span to be had a greatly reduced quality, fail to reach high power, long-life specification requirement.2), existing LTCC ceramic encapsulated base mainly contains two shortcomings: first is two-layerly all to use the LTCC ceramic material, so mechanical strength is relatively poor relatively; Second is that therefore pedestal heatsink transverse poor performance has weakened the integral heat sink performance of encapsulation base greatly, and influenced the life-span and the luminous efficiency of high-capacity LED because bottom pottery LTCC material thermal conductivity is low.
Based on the weak point of existing ceramic encapsulated base, the inventor has designed " a kind of high-power LED ceramic package base ".
Summary of the invention
The present invention is directed to above-mentioned the deficiencies in the prior art technical problem to be solved is: a kind of raising SMD high-capacity LED encapsulation base heat dispersion is provided and strengthens LED product high-low temperature resistant degree impact property, and improve the high-power LED ceramic package base of product reliability and stability.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of high-power LED ceramic package base, this pedestal is made of last ceramic layer and following ceramic layer, last ceramic layer cremasteric reflex cup, last ceramic layer is made with the LTCC glass ceramic material, following ceramic layer is used to install chip and realizes conducting with bottom electrode, following ceramic layer upside is provided with the routing district that is used to that the Chip Area of chip is installed and passes through welding lead connection-core plate electrode, following ceramic layer downside is provided with the bottom land that is connected with two electrodes of chip by pedestal metallization wiring realization, pedestal also is provided with and is used to connect double-layer metallization wiring up and down to realize the hole that conducts of power-on and power-off conducting, and this conducts inside or edge that the hole can be located at pedestal; Reflector in the last ceramic layer plays the effect of optically focused and reflection increase brightness, described ceramic layer is down made by alumina ceramic material or aluminium nitride ceramics material, be used to improve encapsulation base overall mechanical strength and heat dispersion, the thermal conductivity of high temperature alumina and aluminium nitride ceramics material is respectively 18～20W/mK and 170～230W/mK.
Described ceramic layer down can be provided with continuous high heating column and heat radiation pad, high heating column is located at down ceramic layer inside, the upside of high heating column is connected with the Chip Area, high heating column is used for the thermal conductance that chip produces is gone out, the heat radiation pad is located at down the downside of ceramic layer, be used for the heat dissipation that high heating column is derived is come out, the downside of high heating column is connected with the heat radiation pad.
The described ceramic layer reflector angle that goes up can change arbitrarily, adopts the LTCC glass ceramic material of high reflectance to make, and the reflection wall of cup can not metallize.
Described high heating column forms by silver, tungsten, molybdenum or copper are metal filled, is used to strengthen pedestal heat-transfer effect longitudinally.
The bottom basis material is aluminium oxide (Al
2O
3) pottery or aluminium nitride (AlN) pottery, provide support chip and wiring and realize conducting and heat transmission upper strata LTCC glass ceramic material, cremasteric reflex cup with bottom electrode.The Chip Area can be provided with the heating column of filling with highly heat-conductive materials such as Ag, W, Mo or Cu, and the heating column upper and lower surface is equipped with heat radiation pad auxiliary heat dissipation.
Single ceramic encapsulated base product can be installed single-chip or multicore sheet, the bottom internal wiring figure and the design number of plies can be according to number of chips and kind be installed respective change.Also can form encapsulation connection sheet by many ceramic encapsulated bases.
The concrete technological process of production of pedestal of the present invention is as follows:
1), bottom is Al
2O
3Pottery or AlN pottery, upper strata are the LTCC pottery, and W or Mo are metallization material:
Bottom: raw material dispersion → curtain coating → section → punching → embedding (seal hole) → planographic → (lamination/pressurization) → cutting → binder removal/sintering
Upper strata: raw material dispersion → curtain coating → section → punching (chamber) → planographic (seal hole) → cutting
Lamination → pressurization → sintering → plating again after two-layer the finishing.
2), bottom is Al
2O
3Pottery or AlN pottery, upper strata are the LTCC pottery, and Ag or Cu are metallization material:
Bottom: raw material dispersion → curtain coating → section → punching → cutting → binder removal/sintering → embedding (seal hole) → planographic
Upper strata: raw material dispersion → curtain coating → section → punching (chamber) → planographic → cutting
Lamination → pressurization → sintering → (plating) again after two-layer the finishing.
The beneficial effect of a kind of high-power LED ceramic package base of the present invention is: improved SMD high-capacity LED encapsulation base heat dispersion, improved because of temperature rise causes the led chip light decay reaching the problem that the life-span descends greatly; Strengthen LED product high-low temperature resistant degree impact property, improve reliability of products, stability; Reduce production costs.Compared with prior art, the present invention possesses following characteristics is arranged:
(1) thermal diffusivity is good, and LED ceramic encapsulated base bottom substrate of the present invention is Al
2O
3Perhaps AlN pottery, the thermal conductivity height.Can be provided with metal filled high heating column auxiliary heat dissipations such as Ag, W, Mo or Cu in the pedestal Chip Area, strengthen pedestal and vertically reach horizontal heat-transfer effect, well solve the key issue of pedestal heat radiation.
(2) go up ceramic layer design reflectivity cup, strengthen the output of light and can control emission angle, reflector is made by high reflectance LTCC glass ceramics, and the reflection wall of cup can not metallize.
(3) thermal coefficient of expansion and high-capacity LED chip are approaching, and high-low temperature resistant degree impact property is strong, improve LED reliability of products, stability.
(4) the bottom ceramic material changes high-intensity Al into
2O
3Perhaps AlN pottery, the encapsulation base overall mechanical strength is greatly improved.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the overall structure end view of existing ceramic LED encapsulation base;
Fig. 2 is the overall structure vertical view of existing ceramic LED encapsulation base;
Fig. 3 is the overall structure upward view of existing ceramic LED encapsulation base;
Fig. 4 is the overall structure end view of the embodiment of the invention one;
Fig. 5 is the overall structure vertical view of the embodiment of the invention one;
Fig. 6 is the overall structure upward view of the embodiment of the invention one;
Fig. 7 is the overall structure end view of the embodiment of the invention two;
Fig. 8 is the overall structure vertical view of the embodiment of the invention two;
Fig. 9 is the overall structure upward view of the embodiment of the invention two;
Figure 10 is the overall structure end view of the embodiment of the invention three;
Figure 11 is the overall structure vertical view of the embodiment of the invention three;
Figure 12 is the overall structure upward view of the embodiment of the invention three;
Figure 13 is the overall structure end view of the embodiment of the invention four;
Figure 14 is the overall structure vertical view of the embodiment of the invention four;
Figure 15 is the overall structure upward view of the embodiment of the invention four.
Embodiment
With reference to Fig. 4 to Figure 15, the present invention implements like this:
A kind of high-power LED ceramic package base, this pedestal is made of last ceramic layer 10 and following ceramic layer 20, last ceramic layer 10 cremasteric reflex cups, last ceramic layer 10 usefulness LTCC glass ceramic materials are made, following ceramic layer 20 is used to install chip and realizes conducting with bottom electrode, following ceramic layer 20 upsides are provided with the routing district 2 that is used to that the Chip Area 1 of chip is installed and passes through welding lead connection-core plate electrode, following ceramic layer 20 downsides are provided with the bottom land 3 that is connected with two electrodes of chip by pedestal metallization wiring realization, pedestal also is provided with and is used to connect double-layer metallization wiring up and down and conducts hole 4 with what realize the power-on and power-off conducting, and this conducts inside or edge that hole 4 can be located at pedestal; Reflector 5 in the last ceramic layer 10 plays the effect of optically focused and reflection increase brightness, following ceramic layer 20 is made by alumina ceramic material or aluminium nitride ceramics material, be used to improve encapsulation base overall mechanical strength and heat dispersion, the thermal conductivity of high temperature alumina and aluminium nitride ceramics material is respectively 18～20W/mK and 170～230W/mK.
This time ceramic layer 20 can be provided with continuous high heating column 6 and heat radiation pad 7, high heating column 6 is located at down ceramic layer 20 inside, the upside of high heating column 6 is connected with the Chip Area, high heating column 6 is used for the thermal conductance that chip produces is gone out, heat radiation pad 7 is located at down the downside of ceramic layer 20, be used for the heat dissipation that high heating column 6 is derived is come out, the downside of high heating column 6 is connected with heat radiation pad 7.Last ceramic layer 10 reflector angles can change arbitrarily, and last ceramic layer 10 is made by high reflectance LTCC glass ceramics, and the reflection wall of cup can not metallize.
In the present embodiment, high heating column 6 is made by silver metal, and thermal conductivity is about 430W/mK, and high in addition heating column 6 also can be used to strengthen pedestal heat-transfer effect longitudinally by metal filled forming such as tungsten, molybdenum or copper.
The above, it only is the preferred embodiment of a kind of high-power LED ceramic package base of the present invention, be not that technical scope of the present invention is imposed any restrictions, every foundation technical spirit of the present invention all still belongs in the scope of the technology of the present invention content any trickle modification, equivalent variations and modification that top embodiment did.
Claims (4)
1. high-power LED ceramic package base, this pedestal is made of last ceramic layer (10) and following ceramic layer (20), last ceramic layer (10) cremasteric reflex cup, last ceramic layer (10) is made with the LTCC glass ceramic material, following ceramic layer (20) is used to install chip and realizes conducting with bottom electrode, following ceramic layer (20) upside is provided with Chip Area (1) that is used to install chip and the routing district (2) that passes through welding lead connection-core plate electrode, following ceramic layer (20) downside is provided with the bottom land (3) that is connected with two electrodes of chip by pedestal metallization wiring realization, pedestal also is provided with and is used to connect double-layer metallization wiring up and down and conducts hole (4) with what realize the power-on and power-off conducting, this conducts inside or edge that hole (4) can be located at pedestal, reflector (5) in the last ceramic layer (10) plays the effect of optically focused and reflection increase brightness, the invention is characterized in: described ceramic layer (20) is down made by alumina ceramic material or aluminium nitride ceramics material, be used to improve encapsulation base overall mechanical strength and heat dispersion, the thermal conductivity of high temperature alumina and aluminium nitride ceramics material is respectively 18～20W/mK and 170～230W/mK.
2. a kind of high-power LED ceramic package base according to claim 1, it is characterized in that described ceramic layer (20) down can be provided with continuous high heating column (6) and heat radiation pad (7), high heating column (6) is located at down ceramic layer (20) inside, the upside of high heating column (6) is connected with Chip Area (1), high heating column (6) is used for the thermal conductance that chip produces is gone out, heat radiation pad (7) is located at down the downside of ceramic layer (20), be used for the heat dissipation that high heating column (6) is derived is come out, the downside of high heating column (6) is connected with heat radiation pad (7).
3. a kind of high-power LED ceramic package base according to claim 1 and 2, it is characterized in that described ceramic layer (10) the reflector angle that goes up can change arbitrarily, last ceramic layer (10) adopts the LTCC glass ceramic material to make, the material reflectance height, and the reflection wall of cup can not metallize.
4. a kind of high-power LED ceramic package base according to claim 2 is characterized in that described high heating column (6) forms by silver, tungsten, molybdenum or copper are metal filled, is used to strengthen the vertical heat-transfer effect of pedestal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810066253A CN100583476C (en) | 2008-03-27 | 2008-03-27 | High power LED ceramic packaging base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810066253A CN100583476C (en) | 2008-03-27 | 2008-03-27 | High power LED ceramic packaging base |
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| Publication Number | Publication Date |
|---|---|
| CN101252162A true CN101252162A (en) | 2008-08-27 |
| CN100583476C CN100583476C (en) | 2010-01-20 |
Family
ID=39955437
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810066253A Expired - Fee Related CN100583476C (en) | 2008-03-27 | 2008-03-27 | High power LED ceramic packaging base |
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Cited By (16)
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| WO2010006475A1 (en) * | 2008-07-15 | 2010-01-21 | 潮州三环（集团）股份有限公司 | A ceramic packaging substrate for the high power led |
| CN101465399B (en) * | 2008-12-30 | 2010-06-02 | 吉林大学 | LED chip base using diamond film as heat sink material and preparation method |
| CN102064267A (en) * | 2010-11-02 | 2011-05-18 | 佛山市国星光电股份有限公司 | Light emitting diode (LED) support unit for display screen, LED support and method for manufacturing LED support unit |
| CN102368531A (en) * | 2011-10-26 | 2012-03-07 | 深圳市瑞丰光电子股份有限公司 | LED (light emitting diode) encapsulation structure |
| CN102456782A (en) * | 2010-10-15 | 2012-05-16 | 斯坦雷电气株式会社 | Light-emitting device |
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| CN102110616B (en) * | 2009-12-25 | 2012-09-05 | 华东光电集成器件研究所 | Method for realizing thin film multilayer wiring on low temperature cofired ceramic (LTCC) substrate |
| CN102779909A (en) * | 2011-05-13 | 2012-11-14 | 惠州市富济电子材料有限公司 | Method for improving radiating efficiency of high-power LED (Light Emitting Diode) ceramic substrate |
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| CN103208577A (en) * | 2013-03-15 | 2013-07-17 | 东莞市凯昶德电子科技股份有限公司 | Manufacturing method of light-emitting diode aluminum nitride ceramic support with concave cup |
| CN103606621A (en) * | 2013-10-17 | 2014-02-26 | 上舜照明（中国）有限公司 | Ceramic heat dissipation body LED lamp body structure |
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| WO2010006475A1 (en) * | 2008-07-15 | 2010-01-21 | 潮州三环（集团）股份有限公司 | A ceramic packaging substrate for the high power led |
| TWI409974B (en) * | 2008-07-15 | 2013-09-21 | ||
| CN101465399B (en) * | 2008-12-30 | 2010-06-02 | 吉林大学 | LED chip base using diamond film as heat sink material and preparation method |
| CN102044535B (en) * | 2009-10-26 | 2012-08-08 | 佛山市国星光电股份有限公司 | Surface mounted device (SMD) light emitting diode (LED) device and display module thereof for outdoor display screen |
| CN102110616B (en) * | 2009-12-25 | 2012-09-05 | 华东光电集成器件研究所 | Method for realizing thin film multilayer wiring on low temperature cofired ceramic (LTCC) substrate |
| CN102456782A (en) * | 2010-10-15 | 2012-05-16 | 斯坦雷电气株式会社 | Light-emitting device |
| CN102456782B (en) * | 2010-10-15 | 2016-02-24 | 斯坦雷电气株式会社 | Luminescent device |
| CN102064267A (en) * | 2010-11-02 | 2011-05-18 | 佛山市国星光电股份有限公司 | Light emitting diode (LED) support unit for display screen, LED support and method for manufacturing LED support unit |
| CN102779909A (en) * | 2011-05-13 | 2012-11-14 | 惠州市富济电子材料有限公司 | Method for improving radiating efficiency of high-power LED (Light Emitting Diode) ceramic substrate |
| CN102368531A (en) * | 2011-10-26 | 2012-03-07 | 深圳市瑞丰光电子股份有限公司 | LED (light emitting diode) encapsulation structure |
| CN103017527A (en) * | 2013-01-03 | 2013-04-03 | 上海实研电炉有限公司 | Atmosphere furnace |
| CN103208577A (en) * | 2013-03-15 | 2013-07-17 | 东莞市凯昶德电子科技股份有限公司 | Manufacturing method of light-emitting diode aluminum nitride ceramic support with concave cup |
| CN103208577B (en) * | 2013-03-15 | 2016-04-20 | 东莞市凯昶德电子科技股份有限公司 | With the preparation method of recessed cup LED aluminium nitride ceramics support |
| CN103606621A (en) * | 2013-10-17 | 2014-02-26 | 上舜照明（中国）有限公司 | Ceramic heat dissipation body LED lamp body structure |
| CN103606621B (en) * | 2013-10-17 | 2016-08-17 | 上舜照明（中国）有限公司 | Ceramic heat dissipation body LED lamp body structure |
| CN107726055A (en) * | 2016-08-11 | 2018-02-23 | 广州市新晶瓷材料科技有限公司 | White light LASER Light Source method for packing |
| CN107834989A (en) * | 2017-11-08 | 2018-03-23 | 中国电子科技集团公司第二十六研究所 | High-heat-dissipation ceramic shell structure applied to film bulk acoustic wave device |
| CN108135081A (en) * | 2017-12-21 | 2018-06-08 | 昆山福烨电子有限公司 | A kind of ceramic substrate circuit board |
| CN108278501A (en) * | 2018-01-23 | 2018-07-13 | 苏州晶品新材料股份有限公司 | A kind of 16 color integrated LED light sources |
| CN108278501B (en) * | 2018-01-23 | 2020-04-24 | 苏州晶品新材料股份有限公司 | 16-color integrated LED light source |
| CN111739868A (en) * | 2020-06-30 | 2020-10-02 | 西安微电子技术研究所 | High-thermal-conductivity LTCC substrate and manufacturing method thereof |
| CN111739868B (en) * | 2020-06-30 | 2022-05-31 | 西安微电子技术研究所 | High-thermal-conductivity LTCC substrate and manufacturing method thereof |
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| CN100583476C (en) | 2010-01-20 |
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