CN111739868B - High-thermal-conductivity LTCC substrate and manufacturing method thereof - Google Patents
High-thermal-conductivity LTCC substrate and manufacturing method thereof Download PDFInfo
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- CN111739868B CN111739868B CN202010614042.XA CN202010614042A CN111739868B CN 111739868 B CN111739868 B CN 111739868B CN 202010614042 A CN202010614042 A CN 202010614042A CN 111739868 B CN111739868 B CN 111739868B
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- 238000000034 method Methods 0.000 claims abstract description 21
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 44
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/732—Location after the connecting process
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Abstract
The invention discloses an LTCC substrate with high thermal conductivity and a manufacturing method thereof, wherein a sealing cover plate is arranged below an IC chip of the substrate, a columnar group is arranged at the lower part of the sealing cover plate, the whole sealing cover plate is made of a material with high thermal conductivity, so that the heat of the chip is transferred to cooling liquid in a channel through the sealing cover plate, the structure realizes the rapid and effective transfer of heat of a heat source to a heat transfer path of fluid, also realizes the circulating interconnection of the fluid channel of the substrate and external fluid, greatly improves the heat dissipation performance of the LTCC substrate, provides an active heat dissipation method for a high-power SiP circuit and a radio frequency microwave module circuit, and has important social benefits and economic values.
Description
[ technical field ] A method for producing a semiconductor device
The invention belongs to the field of semiconductor hybrid integrated circuits, and particularly relates to an LTCC substrate with high thermal conductivity and a manufacturing method thereof.
[ background of the invention ]
With the development of electronic technology, electronic devices face the development requirements of high-density integration and high power, and although the LTCC substrate has the characteristic of high-density integration, the LTCC substrate has low heat dissipation power and cannot meet the development requirements, and a fluid channel is manufactured in the LTCC substrate, so that the heat conduction efficiency of the substrate is improved by using a heat-conducting fluid, and the LTCC substrate is one of important paths for realizing the high-density and high-heat-conducting LTCC substrate.
Under the common condition, the thermal conductivity of the LTCC ceramic substrate is 2-3W/m-k, the heat dissipation requirement of a high-power circuit is difficult to meet, especially the heat dissipation requirement of a highly integrated SiP product and an LTCC radio frequency/microwave circuit on the circuit is extremely high, even the thermal conductivity of some requirements reaches more than 100W/m-k, and therefore, the LTCC substrate cannot meet the use requirement.
[ summary of the invention ]
The invention aims to overcome the defects of the prior art and provides an LTCC substrate with high thermal conductivity and a manufacturing method thereof; the technical problem that the existing LTCC substrate cannot meet the circuit heat dissipation requirement is solved.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
an LTCC substrate with high thermal conductivity comprises a lower bottom plate and an upper cover plate which are integrally connected, wherein a fluid channel is formed in the lower bottom plate, and flowing cooling liquid is loaded in the fluid channel;
the upper cover plate is provided with a plurality of cavities, the lower ends of the cavities are communicated with the fluid channel, a sealing cover plate is welded in each cavity, and an IC chip is fixedly arranged on each sealing cover plate;
the sealing cover plate comprises a flat plate, the flat plate frame is arranged in the cavity, a downward-protruding columnar group is arranged at the lower part of the flat plate, the columnar group comprises a plurality of heat-conducting columns, the upper ends of the heat-conducting columns are integrally connected with the flat plate, and the lower parts of the heat-conducting columns are soaked in cooling liquid;
The sealing cover plate is made of a high-heat-conductivity material, and the heat conductivity of the sealing cover plate is more than 3W/m-k.
The invention is further improved in that:
preferably, the thermal conductivity of the sealing cover plate is more than 100W/m-k.
Preferably, the heat-conducting columns form a rectangular array structure at the lower part of the flat plate.
Preferably, the lower bottom plate is provided with a fluid inlet and a fluid outlet, the fluid inlet is communicated with the input end of the fluid channel, and the fluid outlet is communicated with the output end of the fluid channel; quick-connect interfaces are inserted into the fluid inlet and the fluid outlet.
Preferably, the quick-plug interface of the fluid inlet is communicated with the output end of the external flow channel, and the quick-plug interface of the fluid outlet is communicated with the input end of the external flow channel; along the flowing direction of the fluid, a fluid pump and a heat dissipation unit are arranged on the external flow channel.
Preferably, the high thermal conductivity material includes metal, silicon carbide, diamond, and graphite.
Preferably, the substrate is disposed in a housing.
The manufacturing method of the LTCC substrate with high thermal conductivity comprises the following steps:
step 3, stacking green ceramic chips corresponding to the lower base plate, placing the carbon ribbon filling strips prepared in the step 1 in cavities corresponding to the fluid channels, and stacking green ceramic chips corresponding to the upper cover plate;
step 4, packaging the periphery of the green ceramic chip by using glue to form a green body, wrapping the whole green body by using a preservative film, then putting the lower surface of the green body downwards on a lower bearing plate, wrapping the upper surface of the green body by using a soft silica gel sheet, then putting the whole green body into an encapsulating bag for vacuum encapsulation, and carrying out isostatic pressing lamination on the whole encapsulated green body;
cutting the laminated green body by using a hot cutting machine, and removing scraps; sintering the cut green body, and forming a process substrate with a fluid channel, a cavity, a fluid inlet and a fluid outlet after sintering;
Step 5, inserting the sealing cover plate into the cavity of the process substrate, and sealing the cavity in a welding or laser seal welding mode;
and 6, inserting a quick-plugging interface into the fluid inlet and the fluid outlet of the sealed process substrate to finish the manufacture of the substrate.
Preferably, in step 5, when the cover plate and the cavity are sealed by welding, the welding temperature is > 200 ℃.
Preferably, the carbon content of the carbon tape filling strip is more than 95%, and the rest 5% is organic matter.
Compared with the prior art, the invention has the following beneficial effects:
the invention discloses an LTCC (low temperature co-fired ceramic) substrate with high heat conductivity, wherein a sealing cover plate is arranged below an IC (integrated circuit) chip, a columnar group is arranged at the lower part of the sealing cover plate, the whole sealing cover plate is made of a high heat conductivity material, so that the heat of the chip is transferred to cooling liquid in a channel through the sealing cover plate, and the cooling liquid flows to bring the heat out of the substrate; the structure of the invention can quickly and effectively transfer heat of a heat source to a heat transfer path of fluid, realizes the circulating interconnection of the fluid channel of the substrate and external fluid, greatly improves the heat dissipation performance of the LTCC substrate, provides an active heat dissipation method for a high-power SiP circuit and a radio frequency microwave module circuit, and has important social benefit and economic value.
Furthermore, the heat dissipation capacity can be improved by the high heat conduction material required by the sealing cover plate, wherein the heat conductivity of the high heat conduction material is greater than 3W/m-k in principle, but the heat dissipation effect is better when the heat conductivity is larger. Therefore, the thermal conductivity can be selected according to the needs, and the thermal conductivity is more than 100W/m-k economically.
Further, the heat conduction columns are of rectangular array structures, and the structures can enable heat to be uniformly taken away.
Furthermore, a fluid inlet and a fluid outlet are formed in the lower base plate, so that the cooling liquid can flow out.
Furthermore, a cooling pump and a heat dissipation unit are arranged in the external cooling structure, the cooling pump can adjust the flow rate of the cooling liquid, and the heat dissipation unit can accelerate the heat dissipation of the cooling liquid.
Further, the high thermal conductivity material can include a variety of materials, enabling the method to be selected based on the substrate itself and cost during application.
The invention also discloses a manufacturing method of the high-thermal-conductivity LTCC substrate, which is characterized in that on the basis of the existing substrate manufacturing method, a method of punching in advance, forming a cavity and sintering after stacking is adopted, and a sealing cover plate is inserted into the through hole after sintering and is sealed to form a final substrate; the carbon ribbon filling strips are used in the manufacturing process, so that the carbon ribbon filling strips can fill the internal fluid channels, and the surface of the substrate is prevented from collapsing due to the internal fluid channels during lamination; when the sealing cover plate and the cavity are welded, the sealing cover plate made of ceramic materials is welded, and the sealing cover plate made of metal materials is welded or sealed by laser.
[ description of the drawings ]
FIG. 1 is a schematic diagram of a circuit structure of an embedded fluid channel;
FIG. 2 is a flow chart of a process for fabricating an LTCC substrate with embedded fluid channels;
FIG. 3 is a sample view of a substrate stack with embedded fluid channels;
wherein (a) is a carbon ribbon filler strip of the fluid channel; (b) the figure is a connection object figure of the carbon ribbon filling strip and the cavity, wherein the black carbon ribbon filling strip is provided, and the rectangular structure is the cavity; (c) figure is a carbon ribbon filler strip of a cross-section of a fluid channel after lamination; (d) the figure is a cross-sectional view of the fluid channel after sintering;
FIG. 4 is a graph of a sintering profile of a substrate with built-in fluid channels;
FIG. 5 is a sintered sample of a built-in fluid channel substrate;
wherein: 1-a lower bottom plate; 2-upper cover plate; 3-sealing the cover plate; 4-leg guiding; 5-IC chip; 6-a housing; 7-a heat dissipation unit; 8-a fluid pump; 9-an external flow channel; 10-a fluid inlet; 11-a fluid outlet; 12-a fluid channel; 13-a quick-plug interface; 21-a cavity; 31-plate; 32-columnar structure; 33-heat conducting column.
[ detailed description ] embodiments
The invention is described in further detail below with reference to the accompanying drawings:
in the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly and encompass, for example, both fixed and removable connections; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
Referring to fig. 1, the invention discloses a high thermal conductivity LTCC substrate and a method for manufacturing the same, the substrate comprises a lower bottom plate 1 and an upper cover plate 2 which are integrally connected, a fluid channel 12 is formed in the lower bottom plate 1, and a flowing cooling liquid is loaded in the fluid channel 12; the upper cover plate 2 is provided with a plurality of cavities 21, a sealing cover plate 3 is inserted in each cavity 21, an IC chip 5 is fixedly arranged on each sealing cover plate 3, and the edge part of each sealing cover plate 3 and the cavity 21 are arranged; the sealing cover plate 3 comprises a flat plate 31, the flat plate 31 is erected in the cavity 21, a downward-protruding columnar group 32 is arranged on the lower portion of the flat plate 31, the columnar group 32 comprises a plurality of heat-conducting columns 33, the upper ends of the heat-conducting columns 33 are integrally connected with the flat plate 31, and the lower portions of the heat-conducting columns 33 are soaked in cooling liquid, so that when the cooling liquid flows, heat on the lower portions of the heat-conducting columns 33 can be taken away, the lower ends of the heat-conducting columns 33 need to be close to the surface of the lower base plate 1 but cannot be in contact with the surface, and if the lower ends of the heat-conducting columns 33 are in contact with the surface of the lower base plate 1, a prestress phenomenon can be generated. Preferably, the heat-conducting pillars 33 are formed in a rectangular array structure at the lower portion of the flat plate 31, so that the entire apparatus can uniformly transfer heat. A fluid inlet 10 and a fluid outlet 11 are formed in the lower base plate 1, the fluid inlet 10 is an input end of a fluid channel 12, and the fluid outlet 11 is an output end of the fluid channel 12; the fluid inlet 10 and the fluid outlet 11 are inserted with a quick-connection interface 13; the quick-plugging port 13 of the fluid inlet 10 is communicated with the output end of the external flow channel 9, and the quick-plugging port 13 of the fluid outlet 11 is communicated with the input end of the external flow channel 9; the fluid pump 8 and the heat dissipating unit 7 are provided on the outer flow passage 9 along the flow direction of the fluid, and the heat dissipating unit 7 can be a heat sink.
The whole substrate is arranged in a shell 6, the upper surface of the substrate is connected with a pin 4 through a metal lead, and the other end of the pin 4 penetrates out of the shell 6.
The sealing cover plate 3 is made of a high-heat-conductivity material, and particularly, the heat conductivity of the sealing cover plate 3 is more than 3W/m-k, and more preferably, the heat conductivity of the sealing cover plate 3 is more than 100W/m-k. High thermal conductivity materials include high thermal conductivity and machinable materials such as metals, silicon carbide, diamond, and graphite.
The sealing cover plate 3 in the invention has two functions: firstly, a cavity 21 for sealing the substrate to prevent liquid from flowing out; secondly, heat generated by the IC chip 5 is transferred into liquid in the cavity 21, the columnar structure 32 of the array is beneficial to heat transfer, and the density of the columnar structure 32 of the array determines the amount of heat exchange; (2) the fluid channel 12 is connected with each heat source lower cavity 21 of the substrate to form a network, only the inlet and the outlet need to be fixed, and the number of the inlet and the outlet can be flexibly set according to the actual conditions, such as 1 inlet and multiple outlet, multiple inlet and multiple outlet 1 and the like, and can be flexibly set according to the heat distribution; (3) the whole assembly process is realized only by adopting a welding mode, and the shell 6 adopts a metal shell, so that heat transfer is facilitated.
Referring to fig. 2, the method is based on the process characteristics of layer-by-layer processing of LTCC, and the manufacture of the high thermal conductivity LTCC substrate is realized through the following steps.
The first step is as follows: carbon tape sheet processing and stacking carbon tape sheets
The carbon tape sheets are composed of a large amount of carbon elements and a small amount of oxyhydrogen elements, the number of layers is calculated according to the thickness, for example, the thickness of 1mm is needed, 1/0.1-10 pieces (the thickness of a single carbon tape sheet is 0.1mm) are needed to be prepared, and all the carbon tape sheets are laminated according to the needed thickness and the LTCC processing technology to form a carbon tape green body; the green carbon tape is then cut into carbon tape filler strips (fig. 3) of a size corresponding to the size of the fluid channels 12 using a green cutter.
The carbon tape filling strip is composed of carbon and organic adhesive, wherein the carbon content is more than 95% (weight percentage, the rest 5% is organic matter), the oxidation temperature of the carbon is about 800 ℃, the volatilization temperature of the organic matter is 100-300 ℃, therefore, in the sintering process, the organic matter volatilizes at 100-300 ℃ in advance along with the temperature rise, when the temperature reaches about 800 ℃, carbon powder is oxidized to form CO2, CO1 and gas H2O (850 ℃) to volatilize, when the temperature reaches 850 ℃, the substrate is sintered and then cooled to normal temperature, and a fluid channel 12 is formed; the purpose of the carbon tape filler strip is to fill the internal fluid channels 12 to prevent the surface of the substrate from collapsing due to the internal fluid channels 12 during lamination.
Secondly, drying, punching and opening all the green ceramic chips, wherein the green ceramic chips are divided into green ceramic chips corresponding to a lower base plate 1 and green ceramic chips corresponding to an upper cover plate 2, all the green ceramic chips corresponding to the lower base plate 1 are punched with holes corresponding to a fluid inlet 10 and a fluid outlet 11, a part of the green ceramic chips corresponding to the lower base plate 1 are provided with cavities corresponding to a fluid channel 12, and the green ceramic chips corresponding to the upper cover plate 2 are provided with holes corresponding to a through hole 21; the punching and cavity opening method is mechanical punching or laser punching;
And after punching and cavity opening, conducting conductor through hole filling, through hole flattening and conductor printing on the green ceramic chip.
Thirdly, arranging the laminations, and sequentially laminating the green ceramic chips and the carbon tape green bodies by adopting a lamination die, wherein the specific steps are that all the green ceramic chips on the lower base plate 1 are stacked, the carbon tape corresponding to the fluid channel 12 is filled into the cavity of the green ceramic chips corresponding to the lower base plate (1), and the green ceramic chips corresponding to the upper cover plate 2 are stacked; and after all the green ceramic chips are laminated, carrying out vacuum encapsulation and isostatic pressing lamination to form a green body.
The fourth step: vacuum encapsulation, isostatic pressing lamination, cutting, low-temperature sintering
Fix the back all around with glue will accomplish the all layers of unburned bricks of lamination, wholly take off from the lamination mould, wrap up the whole parcel of unburned bricks with the plastic wrap, prevent its bonding bearing plate when the lamination, then the back is put down on lower bearing plate, the lower surface is placed the last bearing plate that a size is less (be greater than the effective figure area, be less than back bearing plate), reuse soft silica gel piece with its upper surface parcel, then put into the envelope bag with it paving, carry out vacuum envelope, the vacuum envelope condition: -0.1MPa, number of encapsulation layers 2; the encapsulated green body was integrally isostatic laminated.
The laminated green body is cut to the desired pattern and size using a hot cutter to remove excess scrap. Placing the cut green body (the fluid channel 12 is shown in (b), (c) and (d) of fig. 3) in a low-temperature sintering furnace for sintering (the sintering curve is shown in fig. 4), and forming a monolithic ceramic substrate with a flow channel and a cavity 21 after sintering;
referring to fig. 4, the sintering process is: maintaining the temperature for 60 plus or minus 10min at the temperature rise stage of 20-120 ℃; maintaining the temperature for 900 plus or minus 60min at the temperature rise stage of 120-500 ℃; maintaining at 500 deg.C for 500 + -30 min; maintaining the temperature for 400 +/-10 min at the temperature rising stage of 500-850 ℃; maintaining at 850 deg.C for 50 + -5 min; maintaining the temperature for 300 +/-10 min at the temperature reduction stage of 850-500 ℃; maintaining the temperature for 60 plus or minus 5min at the temperature reduction stage of 500-20 ℃.
The fifth step: cavity 21 seal
A cover plate (see a sealing cover plate 3 in the figure 1) made of a high-heat-conductivity material (such as metal, high-heat-conductivity ceramic, a high-heat-conductivity composite material and the like) is used for sealing and welding the substrate cavity 21 in a sealing mode of high-temperature welding, melt sealing, laser seal welding and the like to form an LTCC substrate which is only provided with an inlet and an outlet and is internally provided with an interconnected fluid channel 12; preferably, the cover plate should be sealed by soldering at a soldering temperature of 200 ℃ or higher, so as to ensure that a sufficient temperature gradient is left during substrate assembly, for example, by soldering with eutectic gold-tin solder.
This sealed apron 3 possesses two functions: firstly, the cavity 21 is sealed, so that the fluid in the snivel channel flows into the cavity 21 without overflowing and seeping to the surface of the substrate to affect the electrical function of the substrate; secondly, the sealing cover plate 3 is made of a material with high heat conductivity, the surface of the sealing cover plate carries out the bearing of a high-power chip and a device, the chip or device can be attached to the surface of the sealing cover plate 3 by means of thermal conductive glue or soldering, when the circuit works, the heat generated by the high-power chip or device can be quickly transferred to the protruding needle-shaped parts inside the cavity 21 through the sealing cover plate 3, and then the heat is transferred to the fluid inside the cavity 21 through heat exchange, since the fluid is flowing, the fluid is driven by an external fluid pump 8 to carry heat out of the substrate, the fluid which releases heat is driven by the fluid pump 8 to return to the position of the cavity 21 in the substrate for heat exchange, and the circulation is carried out, so that the function of long-term heat dissipation is formed.
The thermal conductivity of the material of the sealing cover plate 3 and the structure directly influence how much heat is exchanged. The materials and the structure can be designed according to different schemes according to different requirements, and generally, the materials are made of metals (containing simple substances, alloys and the like), silicon carbide, diamond, graphite and other processable materials with high thermal conductivity. The structure can adopt needle-like structure, the arrangement adopts array mode to arrange, can improve the heat exchange area with the fluid, for further improvement heat exchange capacity, needle-like structure surface adopts the alligatoring, the concave-convex surface can further improve fluidic heat exchange area, needle arrangement is denser then its area with fluid heat exchange is big more, but the velocity of flow of the body of gathering more closely will receive the influence and reduce, will influence the efficiency in heat transfer to the circuit external environment, the fluid pressure that the fluid passage 12 inside received can increase simultaneously, can cause certain influence to the reliability of base plate, consequently need combine demand rational selection needle-like array density when the design, the structure, in order to reach best radiating effect.
And a sixth step: quick plug interface link
After the cavity 21 is well manufactured and sealed, the quick-connection port 13 is welded at the inlet and outlet positions of the fluid channel 12 of the substrate, then the substrate is welded into the shell, and finally the shell is sealed, so that a circuit with an electric function (shown in figure 1) is realized, the quick-connection port 13 is connected to the fluid pump 8 and the external heat dissipation unit 7 through the fluid channel 12, and heat dissipation fluid needs to be filled into the fluid channel 12, the cavity 21, the external flow channel 9, the fluid pump 8 and the heat dissipation unit 7 during connection, so that a complete circuit with the electric function and the heat dissipation function is realized.
FIG. 5 is a diagram of a prepared real object.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (8)
1. The LTCC substrate with high thermal conductivity is characterized by comprising a lower bottom plate (1) and an upper cover plate (2) which are integrally connected, wherein a fluid channel (12) is formed in the lower bottom plate (1), and flowing cooling liquid is loaded in the fluid channel (12);
the upper cover plate (2) is provided with a plurality of cavities (21), the lower ends of the cavities (21) are communicated with the fluid channel (12), a sealing cover plate (3) is welded in each cavity (21), and an IC chip (5) is fixedly arranged on each sealing cover plate (3);
The sealing cover plate (3) comprises a flat plate (31), the flat plate (31) is erected in the cavity (21), a downward-protruding columnar group (32) is arranged at the lower part of the flat plate (31), the columnar group (32) comprises a plurality of heat-conducting columns (33), the upper ends of the heat-conducting columns (33) are integrally connected with the flat plate (31), and the lower parts of the heat-conducting columns (33) are soaked in cooling liquid;
the sealing cover plate (3) is made of a high-heat-conductivity material, and the heat conductivity of the sealing cover plate (3) is more than 3W/m-k;
the heat conductivity of the sealing cover plate (3) is more than 100W/m-k;
the substrate is arranged in a housing (6);
the columnar colonies (32) extend from the upper cover plate (2) to the lower base plate (1) and beyond the upper cover plate (2), but do not contact the lower base plate (1).
2. A high thermal conductivity LTCC substrate as claimed in claim 1 wherein the heat conducting pillars (33) are in a rectangular array configuration at the lower part of the plate (31).
3. The LTCC substrate with high thermal conductivity according to claim 1, wherein the lower base plate (1) is provided with a fluid inlet (10) and a fluid outlet (11), the fluid inlet (10) is communicated with the input end of the fluid channel (12), and the fluid outlet (11) is communicated with the output end of the fluid channel (12); the fluid inlet (10) and the fluid outlet (11) are inserted with quick-plug interfaces (13).
4. A high thermal conductivity LTCC substrate as claimed in claim 3 wherein the fast-mating port (13) of the fluid inlet (10) communicates with the output end of the external flow channel (9) and the fast-mating port (13) of the fluid outlet (11) communicates with the input end of the external flow channel (9); along the flowing direction of the fluid, a fluid pump (8) and a heat dissipation unit (7) are arranged on the external flow channel (9).
5. A high thermal conductivity LTCC substrate as claimed in claim 1 wherein the high thermal conductivity material comprises metal, silicon carbide, diamond and graphite.
6. A method of making a high thermal conductivity LTCC substrate as claimed in claim 5, comprising the steps of:
step 1, stacking carbon tape sheets according to a designed thickness, carrying out vacuum encapsulation and isostatic pressing lamination on the stacked carbon tape sheets to form a carbon tape green body, and then cutting the carbon tape green body by using a hot cutting machine to form a carbon tape filling strip, wherein the carbon tape filling strip is used for filling a fluid channel (12);
step 2, drying, punching and cavity opening are carried out on all the green ceramic chips, and the punching and cavity opening method is mechanical punching or laser punching; the green ceramic chips are divided into green ceramic chips corresponding to a lower base plate (1) and green ceramic chips corresponding to an upper cover plate (2), wherein all the green ceramic chips corresponding to the lower base plate (1) are provided with holes corresponding to a fluid inlet (10) and a fluid outlet (11), a part of the green ceramic chips corresponding to the lower base plate (1) are provided with cavities corresponding to a fluid channel (12), and the green ceramic chips corresponding to the upper cover plate (2) are provided with holes corresponding to a cavity (21);
Step 3, stacking green ceramic chips corresponding to the lower base plate (1), placing the carbon ribbon filling strips prepared in the step 1 in cavities corresponding to the fluid channels (12), and stacking green ceramic chips corresponding to the upper cover plate (2);
step 4, packaging the periphery of the green ceramic chip by glue to form a green body, wrapping the whole green body by a preservative film, then putting the lower surface of the green body downwards on a lower bearing plate, wrapping the upper surface of the green body by a soft silica gel sheet, then putting the whole green body into a packaging bag, carrying out vacuum packaging, and carrying out isostatic pressing lamination on the packaged whole green body;
cutting the laminated green body by using a hot cutting machine, and removing scraps; sintering the green body after cutting, wherein the sintered green body is provided with a process substrate of a fluid channel (12), a cavity (21), a fluid inlet (10) and a fluid outlet (11);
step 5, inserting the sealing cover plate (3) into a cavity (21) of the process substrate, and sealing in a welding or laser sealing mode;
and 6, inserting a quick-plugging port (13) into the fluid inlet (10) and the fluid outlet (11) of the sealed process substrate to finish the manufacture of the substrate.
7. Manufacturing method according to claim 6, characterized in that in step 5, when sealing the cover plate (3) and the cavity (21) by welding, the welding temperature is > 200 ℃.
8. The method of claim 6, wherein the carbon content of the carbon ribbon filler strip is greater than 95% and the remaining 5% is organic.
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| CN101252162A (en) * | 2008-03-27 | 2008-08-27 | 潮州三环（集团）股份有限公司 | High power LED ceramic packaging base |
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| US10020243B2 (en) * | 2016-03-08 | 2018-07-10 | Toyota Motor Engineering & Manufacturing North America, Inc. | Power electronics assemblies having a wide bandgap semiconductor device and an integrated fluid channel system |
| US10121729B2 (en) * | 2016-07-25 | 2018-11-06 | Toyota Motor Engineering & Manufacturing North America, Inc. | Power electronics assemblies having a semiconductor device with metallized embedded cooling channels |
| US10615100B2 (en) * | 2016-12-08 | 2020-04-07 | Toyota Motor Engineering & Manufacturing North America, Inc. | Electronics assemblies and cooling structures having metalized exterior surface |
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| CN101252162A (en) * | 2008-03-27 | 2008-08-27 | 潮州三环（集团）股份有限公司 | High power LED ceramic packaging base |
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