CN106571307A - Preparation method of microchannel heat sink for high-heat flux heat dissipation - Google Patents
Preparation method of microchannel heat sink for high-heat flux heat dissipation Download PDFInfo
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- CN106571307A CN106571307A CN201610873902.5A CN201610873902A CN106571307A CN 106571307 A CN106571307 A CN 106571307A CN 201610873902 A CN201610873902 A CN 201610873902A CN 106571307 A CN106571307 A CN 106571307A
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- 230000004907 flux Effects 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 230000017525 heat dissipation Effects 0.000 title abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000007613 environmental effect Effects 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 7
- 239000012530 fluid Substances 0.000 claims description 61
- 230000005540 biological transmission Effects 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- 238000007731 hot pressing Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910000833 kovar Inorganic materials 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 230000008676 import Effects 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010020741 Hyperpyrexia Diseases 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4878—Mechanical treatment, e.g. deforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a preparation method of a microchannel heat sink for high-heat flux heat dissipation. The method includes the following steps that: a) materials are selected; b) a microchannel is made inside a plate; c) three-dimensional microchannel deformation-free modeling is performed; d ) and a metal frame, a ceramic frame, an outer lead, an IC device, a sensor and a heater are integrated on an active microchannel heat sink, so that system miniaturization can be realized, mechanical support and environmental protection are provided for a chip and an internal circuit, and an input and output function is realized for the chip and the internal circuit. The thermal expansion coefficient of the product is adjustable; and heat generated by devices or a system can be taken away from the heat sink through a high-thermal conductivity medium, the temperature of the surface of the heat sink can be decreased as much as possible and remain constant. The microchannel heat sink has the advantages of small size, large heat dissipation area, good solderability and high stability, and can meet the requirement of high-power density heat dissipation, and can be in sealed connection with other components or parts.
Description
Technical field
The present invention relates to a kind of heat sink preparation method of high heat flux heat transmission fluid channel, belongs to micro-electronic manufacturing skill
Art field.
Background technology
As the electronic device of high integration, microelectromechanical systems, high power laser are developed rapidly, circuit power
Significantly rise, the heat flow density that the course of work is produced unavoidably is sharply increased, KW/m2, MW/m2Magnitude high heat flux radiates
Problem causes extensive concern, and this is accomplished by heat dispersion heat sink and substantial amounts of heat, tradition heat are taken away from the contact area limited with chip
Dead-wood material, such as LTCC, A1203, BeO, AlN, Al, Cu, Mo, W, steel, kovar alloy and Cu/W and Cu/Mo etc. be difficult to meet this
Planting high heat flux radiating needs.Active fluid channel based on microsystems technology and Hydrodynamics Theory is heat sink by hyperpyrexia
Conductance medium, such as water, liquid nitrogen in time take away the heat that device or system are produced from heat sink, and the temperature for making heat sink surface is use up
May reduce simultaneously keeping constant, have the advantages that small volume, area of dissipation it is big, can batch making, with low cost, but it is traditional
Fluid channel mainly utilizes the fabrication techniques such as micromachined and anisotropic etching on orientation silicon chip or on substrate, micro-
Cross section of fluid channel is little, liquid is single-phase when flowing through fluid channel can with larger temperature rise, cause thermal stress too high or chip thermoelectricity not
With etc. serious problems.Accordingly, it would be desirable to develop not only fluid channel sectional area based on microsystems technology and Hydrodynamics Theory
Greatly, the linear expansion coefficient such as thermal coefficient of expansion and silicon, GaAs, silicon nitride, gallium nitride is matched, and solderability and is had good stability,
Be easy to realize sealing-in with other elements or part, can also meet high heat flux radiate needs shell, be encapsulation chip with
Internal circuit provides good mechanical support, environmental conservation, input/output function and guarantee them in processing and using process at
In reliable and stable state.
For the heat sink preparation of fluid channel a key technology be material selection, it is certain that it not only needs material to have
The linear expansion coefficient of the materials such as thermal conductivity, linear expansion coefficient (TEC) and silicon, GaAs, silicon nitride, gallium nitride is matched, also
Need with good machinability, solderability and stability；Secondly, in the integrated making three-dimensional fluid channel of material internal, without change
Shape forming technique；3rd key technology is the heat sink sealing-in with other elements or part, is that chip and internal circuit are provided
Mechanical support, environmental conservation and input/output function is realized, become the main heat dissipation channel of device and system and guarantee at them
In safe and reliable state.
The content of the invention
Proposed by the present invention is a kind of heat sink preparation method of high heat flux heat transmission fluid channel, and its purpose is intended to effectively
Be applied to electronic device, microelectromechanical systems, and manufacture active fluid channel metal heat sink, multilayerceramic device and its
Its multilamellar interconnection electronic circuit etc. is encapsulated.With thermal coefficient of expansion in (4.5～17.6) × 10-6It is adjustable between/K, can meet big
Power density radiating needs, and solderability and has good stability, it is easy to realize sealing-in with other elements or part, can be chip
Mechanical support, environmental conservation are provided with internal circuit and realize input/output function and guarantee that they are in reliable and stable state.
The technical solution of the present invention：Preparation method that a kind of high heat flux heat transmission fluid channel is heat sink, is characterized in that
Comprise the steps:
A) material is selected, and selects thermal conductivity in 1.0～300W/m.k, linear expansion coefficient (TEC) and silicon, GaAs, silicon nitride,
The sheet material of the linear expansion coefficient matching of gallium nitride material；
B) in sheet material internal production fluid channel, using Combined machining modes such as etching, cut and mechanical stampings on sheet material
Process the fluid channel that width is 0.3～1.0mm；
C) three-dimensional fluid channel has runner by the way that packing material is inserted into runner, lamination hot pressing mode without deformation molding by internal
The sheet material of structure is combined and Jing subsequent techniques to process the fluid channel to be formed with particular characteristic and function heat sink；
d）By metal framework, ceramic frame, outer lead, IC devices, sensor, heater etc. be integrated in active fluid channel it is heat sink on,
The miniaturization of system is realized, and is provided machine support, environmental conservation for chip and internal circuit and is realized input/output function.
Advantages of the present invention：
1) high heat conductance medium can be passed through in time to take away the heat that device or system are produced from heat sink, the temperature of heat sink surface is made
Degree is reduced as far as possible and keeps constant；
2) high-power, high heat flux radiating needs can be met, fluid channel sectional area is big, and thermal coefficient of expansion is in (4.5～17.6)
X10-6It is adjustable between/K；
3) can match with the linear expansion coefficient such as silicon, GaAs, silicon nitride, gallium nitride, mechanical performance, solderability and stability are good
It is good, it is also easy to realize sealing-in with other elements or part；
4) good mechanical support, environmental conservation are provided to encapsulate chip and internal circuit, input/output function is partly led with tradition
The hot and cold pipe cooling of system, spray cooling compare cooling effectiveness height, are conducive to improving system run all right and reliability.
Specific embodiment
Preparation method that a kind of high heat flux heat transmission fluid channel is heat sink, comprises the steps:
A) material is selected, and selects 1.0～300W/m.k of thermal conductivity, linear expansion coefficient (TEC) and silicon, GaAs, silicon nitride, nitrogen
Change the sheet material of the linear expansion coefficient matching of gallium material；
B) in sheet material internal production fluid channel, using Combined machining modes such as etching, cut and mechanical stampings on sheet material
Process the fluid channel that width is 0.3～1.0mm；
C) three-dimensional fluid channel has runner by the way that packing material is inserted into runner, lamination hot pressing mode without deformation molding by internal
The sheet material of structure is combined and Jing subsequent techniques process that to form fluid channel heat sink；
d）By metal framework, ceramic frame, outer lead, IC devices, sensor, heater be integrated in active fluid channel it is heat sink on, it is real
The miniaturization of existing system, and provide mechanical support, environmental conservation for chip and internal circuit and realize input/output function.
With thermal coefficient of expansion in (4.5～17.6) × 10-6It is adjustable between/K, meet high-power, high heat flux radiating
Need.
The material of selection not only has certain thermal conductivity, linear expansion coefficient (TEC) and silicon, GaAs, silicon nitride, nitrogen
Change the linear expansion coefficient matching of gallium material, also with good machinability, solderability and stability material, such as A1203、
BeO, AlN, Al, Cu, Mo, W, steel, kovar alloy and Cu/W and Cu/Mo one of which or several.
The fluid channel is made up of backplane level, flow distribution plate, back flow plate and import and export cover plate, and wherein fluid channel is distributed in shunting
Plate and backflow Board position.
Fluid channel, without deformation molding, is by the way that dissimilar materials is inserted into runner or surface is printed on, then by lamination
Hot pressing mode combines the internal sheet material with flow passage structure and Jing subsequent techniques are processed and formed, with particular characteristic and
The fluid channel of function is heat sink.
Can by metal framework, ceramic frame, outer lead, IC devices, sensor, that heater is integrated in active fluid channel is heat sink
On, the miniaturization of system is realized, and provide mechanical support, environmental conservation for chip and internal circuit and realize input and output work(
Energy.
Fluid channel is heat sink in time will be using high heat flux heat transmission fluid channel sinking components by high heat conductance medium
Or the heat that system is produced is taken away from heat sink, the temperature of heat sink surface is reduced and is kept constant, with small volume, radiating surface
Product is big, disclosure satisfy that high power density radiates needs, solderability with have good stability, be also easy to and other elements or part reality
Existing sealing-in, provides mechanical support, environmental conservation and realizes input/output function and guarantee that they are in for chip and internal circuit
Stable, reliable behavior.
From with certain thermal conductivity, the material such as thermal coefficient of expansion and silicon, GaAs, silicon nitride, gallium nitride it is linear swollen
The encapsulating material of swollen coefficients match, such as LTCC, A1203, BeO, AlN, Al, Cu, Mo, W, steel, kovar alloy and Cu/W and Cu/
One or several are selected in Mo etc.；Using etching, cut and mechanical stamping Combined machining mode in backplane level, shunting
Microchannel and intercommunicating pore are processed on plate, back flow plate and import and export cover plate；Fill or in sheet material inside microchannel, intercommunicating pore
Surface printing dissimilar materials；By internal with fluid channel and three-dimensional interconnection architecture by way of lamination, hot pressing or welding
Sheet material is combined, and it is heat sink that Jing subsequent techniques process the active fluid channel to be formed with particular characteristic and function.
Embodiment 1
It is according to the present invention to be highly suitable for preparing thermal coefficient of expansion in (4.5～7) X10-6Between/K, power density is 10
～5000w/cm2The active fluid channel of radiating needs is heat sink, and its step includes：
a）Adopt cut or the method for mechanical punching in thickness for 0.1～2.0mm, with stable dielectric constant, excellent
Good mechanical strength and high-temperature stability, the life with the thermal coefficient of expansion closely such as silicon, GaAs, silicon nitride, gallium nitride
The through hole that aperture is 0.1～0.5mm is processed on porcelain, width is the fluid channel of 0.3～1.0mm；
b）Conductor metal slurrying material is injected in the through hole of step a processing by the mask plate that thickness is 0.1～0.5mm；
Dissimilar materials is inserted into fluid channel；
c）String diameter is adopted for 12～35um, the precise silk screen with thick film figure applies conductor metal slurrying material, dissimilar materials
Overlay on through the aluminium oxide green surface of the filling of step b through hole and fluid channel filling；
d）Using cut or the method for mechanical punching in the process chamber in step b, the green of step c；
e）Laminated ceramic chips through step a, b, c and d are stacked, in 30～90 DEG C, 200～3000PSI pressure is pushed
It is real, so as to form the green component containing three-dimensional interconnection and fluid channel；
f）Green component Jing high temperature sinterings, polymer therein, carbon etc. volatilize and burn, densification that fluid channel is heat sink.
Embodiment 2
It is according to the present invention to be highly suitable for preparing thermal coefficient of expansion in (5～17.6) × 10-6Between/K, power density is
10～5000w/cm2The active fluid channel of radiating needs is heat sink, and its step includes：
A) adopt the method for etching, mechanical stamping or milling in thickness for 0.1～2.0mm, with excellent mechanical performance and height
Temperature stability, thermal coefficient of expansion is in (5～17.6) × 10-6The sheet materials such as Al, Cu, kovar alloy, Cu/W and Cu/M between/K
Upper working width is the fluid channel of 0.3～1.0mm；
B) sheet material through step a is stacked, by welding or hot pressing so as to being formed containing the heat sink of fluid channel.
Claims (7)
1. a kind of heat sink preparation method of high heat flux heat transmission fluid channel, is characterized in that comprising the steps:
A) material is selected, and selects thermal conductivity in 1.0～300W/m.k, linear expansion coefficient (TEC) and silicon, GaAs, silicon nitride,
The sheet material of the linear expansion coefficient matching of gallium nitride material；
B) in sheet material internal production fluid channel, added on sheet material using etching, cut and mechanical stamping Combined machining mode
Work goes out the fluid channel that width is 0.3～1.0mm；
C) three-dimensional fluid channel has runner by the way that packing material is inserted into runner, lamination hot pressing mode without deformation molding by internal
The sheet material of structure is combined and Jing subsequent techniques process that to form fluid channel heat sink；
d）By metal framework, ceramic frame, outer lead, IC devices, sensor, heater be integrated in active fluid channel it is heat sink on, it is real
The miniaturization of existing system, and provide mechanical support, environmental conservation for chip and internal circuit and realize input/output function.
2. the heat sink preparation method of high heat flux heat transmission fluid channel according to claim 1, is characterized in that having heat swollen
Swollen coefficient is in (4.5～17.6) × 10-6It is adjustable between/K, meet high-power, high heat flux radiating needs.
3. the heat sink preparation method of high heat flux heat transmission fluid channel according to claim 1, is characterized in that the material of selection
Material not only has certain thermal conductivity, linear expansion coefficient (TEC) and silicon, GaAs, silicon nitride, gallium nitride material it is linear swollen
Swollen coefficients match, also with good machinability, solderability and stability material, such as A1203、BeO、AlN、Al、Cu、Mo、W、
Steel, kovar alloy and Cu/W and Cu/Mo one of which or several.
4. the heat sink preparation method of high heat flux heat transmission fluid channel according to claim 1, fluid channel described in its feature
By backplane level, flow distribution plate, back flow plate and import and export cover plate are constituted, and wherein fluid channel is distributed in flow distribution plate and backflow Board position.
5. the heat sink preparation method of high heat flux heat transmission fluid channel according to claim 1, it is characterized in that fluid channel without
Deformation molding, is, by the way that dissimilar materials is inserted into runner or surface is printed on, then have internal by lamination hot pressing mode
The sheet material for having flow passage structure is combined and Jing subsequent techniques to process the fluid channel to be formed heat sink.
6. the heat sink preparation method of high heat flux heat transmission fluid channel according to claim 1, it is characterized in that can be by metal
Framework, ceramic frame, outer lead, IC devices, sensor, heater be integrated in active fluid channel it is heat sink on, realize the miniature of system
Change, and provide mechanical support, environmental conservation for chip and internal circuit and realize input/output function.
7. the heat sink preparation method of high heat flux heat transmission fluid channel according to claim 1, is characterized in that fluid channel heat
It is heavy to pass through the heat that high heat conductance medium will be produced in time using high heat flux heat transmission fluid channel sinking components or system
Amount is taken away from heat sink, the temperature of heat sink surface is reduced and is kept constant, big with small volume, area of dissipation, disclosure satisfy that big
Power density radiating needs, and solderability and has good stability, and is also easy to realize sealing-in with other elements or part, be chip and
Internal circuit provides mechanical support, environmental conservation and realizes input/output function and guarantee them in stable, reliable behavior.
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| CN201610873902.5A CN106571307A (en) | 2016-10-08 | 2016-10-08 | Preparation method of microchannel heat sink for high-heat flux heat dissipation |
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Cited By (6)
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| CN107481983A (en) * | 2017-09-14 | 2017-12-15 | 苏州中航天成电子科技有限公司 | A kind of Microwave Power Tubes package casing, preparation method and cooling system |
| CN108172556A (en) * | 2017-12-24 | 2018-06-15 | 中国电子科技集团公司第五十五研究所 | Miniflow heat dissipation gallium nitride transistor and its manufacturing method in piece based on atomistic binding |
| CN108198793A (en) * | 2017-12-24 | 2018-06-22 | 中国电子科技集团公司第五十五研究所 | It is a kind of closely to tie the embedded high efficiency and heat radiation gallium nitride transistor of miniflow and its manufacturing method |
| CN109434296A (en) * | 2018-09-26 | 2019-03-08 | 电子科技大学 | A kind of preparation method of fluid channel radiator |
| CN111617813A (en) * | 2020-06-05 | 2020-09-04 | 深圳市尚维高科有限公司 | Biological detection chip and manufacturing method |
| CN113056087A (en) * | 2021-01-28 | 2021-06-29 | 中国电子科技集团公司第二十九研究所 | Printed circuit board embedded with micro-channel and preparation method thereof |
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