CN108198793A - It is a kind of closely to tie the embedded high efficiency and heat radiation gallium nitride transistor of miniflow and its manufacturing method - Google Patents
It is a kind of closely to tie the embedded high efficiency and heat radiation gallium nitride transistor of miniflow and its manufacturing method Download PDFInfo
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- CN108198793A CN108198793A CN201711413052.1A CN201711413052A CN108198793A CN 108198793 A CN108198793 A CN 108198793A CN 201711413052 A CN201711413052 A CN 201711413052A CN 108198793 A CN108198793 A CN 108198793A
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Abstract
The present invention relates to a kind of embedded high efficiency and heat radiation gallium nitride transistor of closely knot miniflow and its manufacturing methods, gallium nitride transistor includes active area functional layer, barrier layer, buffer layer and substrate layer successively from top to bottom, active area functional layer is made of grid, source and leakage, microfluidic channel is provided in the substrate layer, the microfluidic channel is arranged on the nearly interface below active area.Fluid for radiating heat technology is introduced chip interior by the present invention, realizes the high efficiency and heat radiation ability in nearly interface, solves high-power gallium nitride device active region heat accumulation；Compared to traditional gallium nitride device, power density can promote 2 times or more, greatly improve device peak power output, and maintain higher reliability.
Description
Technical field
The invention belongs to semiconductor devices heat management development technique field, particularly a kind of nearly knot miniflow is embedded efficiently to be dissipated
Tropical resources gallium transistor and its manufacturing method.
Technical background
Third generation semiconductor power device using gallium nitride as representative has shown its excellent high-power applications characteristic,
Gallium nitride chip in practical application is based on SiC substrate, and the power density of power device only reaches five points of its theoretical value
One of, the powerful characteristic advantage of gallium nitride is played far away.This is primarily due to HIGH-POWERED MICROWAVES device and is exporting big work(
A large amount of heat accumulations can be generated while rate, reach upper hectowatt even Shang kilowatt microwave power device more particularly with output power
Add seriously, cause the drastically raising of device junction temperature, lead to its device performance and the degradation of reliability.
The main epitaxial growth of gallium nitride base power device at present is on the substrate materials such as silicon carbide, sapphire, and these are served as a contrast
Bottom material has relatively low thermal conductivity, and heat dissipation problem seriously limits the performance of gallium nitride device, therefore carries out gallium nitride and partly lead
The heat management of body device has been developed into solving the technical bottleneck of its high-power applications.In particular for current change system to super
High-power and highly integrated device special circumstances demand, the heat dissipation technology of existing passive type is due to the physical characteristic of its own
It can not solve its System on Chip/SoC active area thermal buildup issue.
For macro-scale, the active heat-sinking capability of liquid is typically 10 times or more of solid passive heat radiation ability,
Therefore the active heat removal technology for cooling down liquid and the nearly interface effective integration of chip are explored, will be that this kind of super high power of solution is special
The hot research direction of demand, and how to overcome the shortcomings of present in the prior art, realize the micro- of gallium nitride device chip interior
Wandering thermal technology then becomes one of emphasis problem urgently to be resolved hurrily in current high power device heat management development field.
Invention content
The purpose of the present invention is to provide a kind of embedded high efficiency and heat radiation gallium nitride transistor of closely knot miniflow and its manufacturers
Method solves the heat accumulation in gallium nitride high power device chip active area, carries out chip-scale thermal management technology exploitation, closely promotes it
The heat-sinking capability in the nearly interface of chip.
Realize the object of the invention technical solution be：A kind of nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow, from
Including active area functional layer, barrier layer, buffer layer and substrate layer under above successively, active area functional layer is made of grid, source and leakage,
Microfluidic channel is provided in the substrate layer, the microfluidic channel is arranged on the nearly interface below active area.
The microfluidic channel is apart from 5-30 microns of buffer layer, apart from 5-15 microns of substrate back, microfluidic channel center
Corresponding in vertical direction position with the grid of active area functional layer, microfluidic channel or so width is determined according to grid grid spacing, takes grid
2nd/to three/3rds of grid spacing.
The width of the microfluidic channel is 10um-100um.
The nearly interface is the region covered below active area, and size is less than 100 microns.
The gallium nitride device substrate is Si, sapphire or SiC material.
A kind of manufacturing method of the nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow, the system including gallium nitride transistor
The preparation of standby and near interface microfluidic channel, the preparation of wherein microfluidic channel include the following steps：
1) layer protective layer is applied in the front of completed gallium nitride transistor, functional areas is protected, and using key
Conjunction technology is into being about to transistor front and temporary carrier is bonded；
2) substrate of gallium nitride transistor is ground using wafer lapping machine thinned, remaining substrate thickness is in 80- after being thinned
200 microns；
3) etched features of microfluidic channel are made by lithography on the substrate of gallium nitride transistor, this figure on substrate is located at
The nearly tie region in underface of transistor active area carries out nearly interface fluid channel to substrate using plasma etching machine and etches, directly
To apart from 5~30 microns of stoppings of gallium nitride layer, the etching of nearly interface fluid channel is completed；
4) the one side of new substrate slice apply layer protective layer, which is protected, and using bonding techniques into
It is about to transistor front and temporary carrier is bonded；
5) new substrate slice is ground using wafer lapping machine thinned, remaining substrate thickness is at 5-15 microns after being thinned；
6) in one layer of BCB of thinned face spin coating that new substrate afterwards is thinned, the gallium nitride transistor of microfluidic channel will be embedded in
Substrate it is opposite with the thinned face of new substrate in temperature to be bonded under conditions of 200-250 degrees Celsius, complete nearly interface fluid channel
Sealing；
7) it is bonded slide glass temporarily by two groups to remove, realizes the system of the nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow
It is standby.
Protective layer is oxide, nitride or BCB in step 1 and step 4.
Compared with prior art, remarkable advantage of the invention is：(1) present invention is passed through using plasma etching technology
Embedded microchannel is formed in the nearly interface of substrate of gallium nitride active area lower end, and using the technology of bonding, carries out microchannel
Sealing forms fluid channel, closely realizes that gallium nitride transistor chip-scale fluid thermal management technology is developed, promotes gallium nitride transistor
Nearly interface high efficiency and heat radiation；(2) fluid for radiating heat technology is introduced chip interior by the present invention, realizes efficiently dissipating for nearly interface
Thermal energy power solves high-power gallium nitride device active region heat accumulation；Compared to traditional gallium nitride device, power density can carry
2 times or more is risen, greatly improves device peak power output, and maintain higher reliability.
Description of the drawings
Fig. 1 is the nearly knot embedded high efficiency and heat radiation gallium nitride transistor structure diagram of miniflow of the present invention.
Fig. 2 (a)~Fig. 2 (h) is the preparation flow schematic diagram of the nearly interface microfluidic channel of the present invention, and wherein Fig. 2 (a) is
The tradition of gallium nitride transistor prepares schematic diagram, and Fig. 2 (b) is the interim bonding schematic diagram in transistor function area, and Fig. 2 (c) is crystalline substance
Body pipe substrate thinning schematic diagram, Fig. 2 (d) etch schematic diagram for microchannel, and Fig. 2 (e) is the interim bonding schematic diagram of sealing structure,
Fig. 2 (f) is the thinned schematic diagram of sealing structure, and Fig. 2 (g) is the bonded seal schematic diagram of fluid channel, and Fig. 2 (h) is interim to remove
It is bonded slide glass schematic diagram.
Specific embodiment
The specific embodiment of the present invention is further described in detail with reference to the accompanying drawings and examples.
With reference to Fig. 1, a kind of nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow proposed by the present invention, high efficiency and heat radiation
Gallium nitride transistor structure design once includes active area functional layer, barrier layer 4, buffer layer 5, substrate 6 and its micro- from top to bottom
Runner 7, active area functional layer are made of grid 1, source 2 and leakage 3, and the gallium nitride device substrate 6 is Si, sapphire, SiC material
In any one；Microfluidic channel 7 is equipped in the substrate layer, the microfluidic channel 7 is under the grid 1 of active area functional layer
Side closely faces 8 position of heat source, which is nearly interface, and the efficient of gallium nitride transistor can be effectively realized by the heat exchange of microfluid
Heat-sinking capability.
With reference to Fig. 2, a kind of manufacturing method of the nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow proposed by the present invention,
It comprises the following specific steps that：
1) prepared by the tradition of gallium nitride transistor：The growth of grid, source, the functional areas leaked is completed, obtains gallium nitride transistor,
As shown in Fig. 2 (a)；
2) design and preparation of the embedded fluid channel in nearly interface；
1. the design of fluid channel：According to the size for the gallium nitride transistor active area completed, nearly interface fluid channel is designed
Size and distribution, the width dimensions of fluid channel are 10um-100um, are distributed and are consistent with the size of active area；
2. the interim bonding in transistor function area：Layer protective layer is applied in the front of completed gallium nitride transistor, it is right
Functional areas are protected, this protective layer can be oxide, nitride or BCB；And using bonding techniques into being about to transistor just
Face and temporary carrier are bonded, as shown in Fig. 2 (b)；
3. transistor substrate is thinned：The substrate of gallium nitride transistor is ground using wafer lapping machine it is thinned, after being thinned
Remaining substrate thickness is at 80-200 microns, as shown in Fig. 2 (c)；
4. the etching of microchannel：It makes the etched features of the fluid channel of design by lithography on the substrate of gallium nitride transistor, serves as a contrast
This figure on bottom is located at the nearly tie region in underface of transistor active area, and substrate is closely tied using plasma etching machine
Area's fluid channel etching until apart from 5~30 microns of stoppings of gallium nitride layer, completes the etching of nearly interface fluid channel, such as Fig. 2 (d) institutes
Show；
5. the interim bonding of sealing structure：Layer protective layer is applied in the one side of new substrate slice, which is protected
Shield, this protective layer can be oxide, nitride or BCB；And using bonding techniques into be about to transistor front and temporary carrier
It is bonded, as shown in Fig. 2 (e)；
6. sealing structure is thinned：New substrate slice is ground to thinned, remaining substrate thickness after being thinned using wafer lapping machine
At 5-15 microns, as shown in Fig. 2 (f)；
7. the bonded seal of fluid channel：One layer of interim bonding material of thinned face spin coating of new substrate after being thinned, by insertion
The substrate of the gallium nitride transistor of fluid channel opposite with the thinned face of new substrate in temperature is key under conditions of 200-250 degrees Celsius
It closes, the sealing of nearly interface fluid channel is completed, as shown in Fig. 2 (g)；
8. remove interim bonding slide glass：Upper and lower two groups interim bonded layers are removed, realizes that nearly knot miniflow is embedded and efficiently dissipates
The preparation of tropical resources gallium transistor, as shown in Fig. 2 (h).
Embodiment
A kind of manufacturing method of the nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow, specifically includes following steps：
1) gallium nitride transistor conventional face technique is completed, obtains gallium nitride transistor, substrate is SiC material, active
The grid grid spacing in area is 30um, is 10 grid structures；
2) preparation of the nearly embedded fluid channel in interface is carried out；
1. according to the size for the gallium nitride transistor active area completed, the size for designing nearly interface microfluidic channel is
20um, center is consistent with source center, and distribution is 10 groups according to active area scale, fully meets its heat-sinking capability and reliable
Sexuality.
2. the front in completed gallium nitride transistor applies one layer of silica medium protective layer, functional areas are protected
Shield, and using bonding techniques into being about to transistor front and temporary carrier is bonded；
3. the gallium nitride transistor containing temporary carrier is put into wafer lapping machine, its SiC substrate is ground thinned, be thinned to
Thickness is 80 microns；
4. the etched features of the microfluidic channel of design are made by lithography in the SiC substrate of gallium nitride transistor, on substrate
This figure is located at the nearly tie region in underface of transistor active area, and nearly interface is carried out to SiC substrate using plasma etching machine
Fluid channel etches, until apart from 10 microns of stoppings of gallium nitride layer；
5. the one side in a piece of new SiC substrate piece applies silica medium protective layer, which is protected, and adopts
With bonding techniques into being about to transistor front and temporary carrier is bonded；
6. the SiC substrate piece containing temporary carrier is put into wafer lapping machine, it is 10 microns to be ground and be thinned to thickness；
7. one layer of BCB of thinned face spin coating of the SiC substrate containing temporary carrier after being thinned, by the gallium nitride of embedded fluid channel
The substrate of transistor and the SiC containing temporary carrier be thinned face it is opposite be 200-250 degrees Celsius in temperature under conditions of be bonded, complete
The sealing of nearly interface fluid channel；
8. will then be bonded slide glass removing temporarily, the system of the nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow is realized
It is standby.
More than specific embodiment and embodiment are to a kind of nearly knot embedded high efficiency and heat radiation nitrogen of miniflow proposed by the present invention
Change the specific support of gallium transistor design and manufacturing method technological thought, it is impossible to protection scope of the present invention is limited with this, it is every
According to technological thought proposed by the present invention, any equivalent variations done on the basis of the technical program or equivalent change,
Still fall within the range of technical solution of the present invention protection.
Claims (7)
1. a kind of nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow, includes active area functional layer, gesture successively from top to bottom
Barrier layer (4), buffer layer (5) and substrate layer (6), active area functional layer are made of grid (1), source (2) and leakage (3), which is characterized in that
Microfluidic channel (7) is provided in the substrate layer (6), the microfluidic channel (7) is arranged on the nearly interface below active area.
A kind of 2. nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow according to claim 1, which is characterized in that institute
Microfluidic channel is stated apart from 5-30 microns of buffer layer (5), apart from 5-15 microns of substrate back, microfluidic channel center and active area
The grid (1) of functional layer are corresponded in vertical direction position, and microfluidic channel or so width is determined according to grid grid spacing, takes grid grid spacing
2/1 to three/3rds.
A kind of 3. nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow according to claim 2, which is characterized in that institute
The width for stating microfluidic channel is 10um-100um.
4. the nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow of one kind according to claim 1,2 or 3, feature exist
In the gallium nitride device substrate is Si, sapphire or SiC material.
5. closely tying the method for the embedded high efficiency and heat radiation gallium nitride transistor of miniflow described in a kind of manufacturing claims 3, feature exists
In the preparation of preparation and nearly interface microfluidic channel including gallium nitride transistor, the preparation of microfluidic channel includes following step
Suddenly：
1) layer protective layer is applied in the front of completed gallium nitride transistor, functional areas is protected, and using bonding skill
Art is into being about to transistor front and temporary carrier is bonded；
2) substrate of gallium nitride transistor is ground using wafer lapping machine thinned, remaining substrate thickness is micro- in 80-200 after being thinned
Rice；
3) etched features of microfluidic channel are made by lithography on the substrate of gallium nitride transistor, this figure on substrate is located at crystal
The nearly tie region in underface of pipe active area carries out nearly interface fluid channel to substrate using plasma etching machine and etches, until away from
The etching of nearly interface fluid channel is completed in 5~30 microns from gallium nitride layer stoppings；
4) layer protective layer is applied in the one side of new substrate slice, which is protected, and using bonding techniques into being about to
Transistor front and temporary carrier are bonded；
5) new substrate slice is ground using wafer lapping machine thinned, remaining substrate thickness is at 5-15 microns after being thinned；
6) in one layer of BCB of thinned face spin coating that new substrate afterwards is thinned, the substrate of the gallium nitride transistor of microfluidic channel will be embedded in
It is opposite with the thinned face of new substrate in temperature to be bonded under conditions of 200-250 degrees Celsius, complete the sealing of nearly interface fluid channel；
7) it is bonded slide glass temporarily by two groups to remove, completes the preparation of the nearly knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow.
6. closely the manufacturing method of the knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow, feature exist according to claim 5
In protective layer is oxide, nitride or BCB in step 1.
7. closely the manufacturing method of the knot embedded high efficiency and heat radiation gallium nitride transistor of miniflow, feature exist according to claim 5
In protective layer can be oxide, nitride or BCB in step 4.
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| CN109742026A (en) * | 2019-02-25 | 2019-05-10 | 哈尔滨工业大学 | The method that direct growth method prepares diamond auxiliary heat dissipation silicon carbide substrate GaN-HEMTs |
| CN109935558A (en) * | 2019-02-20 | 2019-06-25 | 厦门市三安集成电路有限公司 | The heat dissipating method and radiator structure of heterojunction bipolar transistor |
| CN110379782A (en) * | 2019-06-23 | 2019-10-25 | 中国电子科技集团公司第五十五研究所 | Diamond heat dissipation gallium nitride transistor and preparation method are embedded in based on the piece for etching and orienting extension |
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| CN109742026A (en) * | 2019-02-25 | 2019-05-10 | 哈尔滨工业大学 | The method that direct growth method prepares diamond auxiliary heat dissipation silicon carbide substrate GaN-HEMTs |
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| CN110379782A (en) * | 2019-06-23 | 2019-10-25 | 中国电子科技集团公司第五十五研究所 | Diamond heat dissipation gallium nitride transistor and preparation method are embedded in based on the piece for etching and orienting extension |
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| CN113035808A (en) * | 2020-11-06 | 2021-06-25 | 中国电子科技集团公司第五十五研究所 | On-chip micro-flow driving device applied to gallium nitride transistor and preparation method |
| CN113035808B (en) * | 2020-11-06 | 2022-09-09 | 中国电子科技集团公司第五十五研究所 | On-chip micro-flow driving device applied to gallium nitride transistor and preparation method |
| CN113437031A (en) * | 2021-06-17 | 2021-09-24 | 西北工业大学 | Embedded micro-channel heat dissipation device based on liquid metal |
| CN113594111A (en) * | 2021-07-08 | 2021-11-02 | 哈工大机器人(中山)无人装备与人工智能研究院 | Gallium nitride power device with in-chip array micro-flow column heat dissipation structure and manufacturing method |
| CN114336266A (en) * | 2021-12-30 | 2022-04-12 | 中国科学院长春光学精密机械与物理研究所 | High-efficiency heat-dissipation semiconductor laser and manufacturing method thereof |
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