CN113594111A - Gallium nitride power device with in-chip array micro-flow column heat dissipation structure and manufacturing method - Google Patents
Gallium nitride power device with in-chip array micro-flow column heat dissipation structure and manufacturing method Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 87
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 68
- 239000010410 layer Substances 0.000 claims description 24
- 238000000227 grinding Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 10
- 239000002346 layers by function Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000009825 accumulation Methods 0.000 abstract description 5
- 239000012530 fluid Substances 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00119—Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems
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Abstract
The invention relates to an in-chip array microflow column heat radiation structure gallium nitride power device and a manufacturing method thereof. The invention introduces the fluid heat dissipation technology into the chip, realizes the high-efficiency heat dissipation capability of the near junction area, and solves the problem of heat accumulation in the active area of the high-power gallium nitride device; compared with the traditional gallium nitride device, the power density of the device can be improved by more than several times, the maximum output power of the device is greatly improved, and higher reliability is maintained.
Description
Technical Field
The invention belongs to the technical field of semiconductor device heat management development, and particularly relates to a gallium nitride power device with an on-chip array micro-flow column heat dissipation structure and a manufacturing method thereof.
Technical Field
The third generation semiconductor power device represented by gallium nitride has shown excellent high-power application characteristics, and a gallium nitride chip in practical application is based on a SiC substrate, the power density of the power device reaches one fifth of the theoretical value, and the advantage of the high-power characteristics of the gallium nitride is far from being exerted. This is mainly because the high-power microwave device can generate a large amount of heat accumulation while outputting high power, and is especially more serious for the microwave power device with output power reaching to kilowatts or even to ten thousand watts, which causes the sharp rise of the junction temperature of the device, resulting in the serious decline of the performance and reliability of the device.
At present, gallium nitride-based power devices are mainly epitaxially grown on substrate materials such as silicon carbide and silicon, and the substrate materials have low thermal conductivity, and the performance of the gallium nitride devices is severely limited by the problem of heat dissipation, so that the thermal management development of the gallium nitride semiconductor devices is developed to solve the technical bottleneck of high-power application of the gallium nitride semiconductor devices. Especially, aiming at the special condition requirement of the existing equipment system on the large power of the ten-thousand watt level, the heat accumulation problem of the active area of the system chip can not be solved by the existing passive heat dissipation technology due to the self physical characteristics.
From the macroscopic scale, the active heat dissipation capability of liquid is usually more than 10 times of the passive heat dissipation capability of solid, so the exploration of effective integration of the active heat dissipation technology of liquid cooling and the near junction area of the chip is a hot research direction for solving the special requirements of ultra-high power, and how to overcome the defects in the prior art, and the realization of the microfluidic heat dissipation technology inside the gallium nitride device chip becomes one of the key problems to be solved urgently in the field of heat management development of the high-power devices at present.
Disclosure of Invention
The invention aims to provide a gallium nitride power device with an in-chip array micro-flow column heat dissipation structure and a manufacturing method thereof, which solve the problem of heat accumulation in a chip of the gallium nitride power device and improve the heat dissipation capability of a near junction area of the chip.
The technical scheme for realizing the purpose of the invention is as follows: an on-chip array micro-flow column heat radiation structure gallium nitride power device and a manufacturing method thereof sequentially comprise a device functional layer, a barrier layer, a buffer layer and a substrate layer from top to bottom, wherein an array micro-flow column is arranged in the substrate layer, and the array micro-flow column is arranged at a near junction area below an active area.
The array microfluidic column is 5-15 microns away from the buffer layer and 5-15 microns away from the back surface of the substrate, the center of the array microfluidic column corresponds to the position of the functional layer of the device in the vertical direction, and the size of the area of the array microfluidic column is consistent with that of the functional layer of the device.
The diameter of the array microflow column is 30-150 microns, and the center-to-center dimension is 2-3 times of the diameter.
The near junction region is an area covered below the active region and has a size smaller than 100 micrometers.
The gallium nitride device substrate is made of Si, sapphire or SiC materials.
A method for manufacturing a gallium nitride power device with an in-chip array micro-flow column heat dissipation structure comprises the steps of preparing the gallium nitride power device and preparing a near-junction area array micro-flow column, wherein the preparation of the array micro-flow column comprises the following steps:
1) coating a protective layer on the front surface of the finished gallium nitride power device, protecting the functional region, and bonding the front surface of the gallium nitride power device and the temporary slide glass by adopting a bonding technology;
2) grinding and thinning the substrate of the gallium nitride power device by using a grinding machine, wherein the thickness of the residual substrate after thinning is 80-200 microns;
3) photoetching an etching pattern of the array microflow columns on a substrate of the gallium nitride power device, wherein the pattern on the substrate is positioned in a near junction area right below an active area of the gallium nitride power device, and etching the near junction microflow columns on the substrate by using a plasma etching machine until the distance from the substrate to the gallium nitride layer is 5-15 microns, so as to finish the etching of the near junction microflow columns;
4) coating a protective layer on one surface of a new substrate sheet to protect the substrate surface, and bonding the front surface of the gallium nitride power device with a temporary slide by adopting a bonding technology;
5) grinding and thinning the new substrate sheet by using a sheet grinding machine, wherein the thickness of the residual substrate after thinning is 5-15 microns;
6) spin-coating a layer of BCB on the thinned surface of the new substrate, and bonding the substrate of the gallium nitride power device embedded into the array microfluidic column and the thinned surface of the new substrate at the temperature of 200-250 ℃ relatively to complete the sealing of the near-junction microfluidic column;
7) and removing the two groups of temporary bonding slides to realize the preparation of the gallium nitride power device with the in-chip array micro-flow column heat dissipation structure.
The protective layer in step 1 and step 4 may be an oxide, a nitride, or BCB.
Compared with the prior art, the invention has the following remarkable advantages: (1) the invention utilizes the plasma etching technology to form an array type micro-flow column channel at the near-junction area of the substrate at the lower end of the gallium nitride active area, introduces the fluid heat dissipation technology into the chip to form a heat transmission path with small flow resistance and high-efficiency heat dissipation, and solves the problem of heat accumulation in the active area of a high-power gallium nitride device; compared with the traditional gallium nitride device, the power density of the device can be improved by more than several times, and the maximum output power of the device is greatly improved.
Drawings
Fig. 1(a) to fig. 1(b) are schematic structural diagrams of an on-chip array micro-flow column heat dissipation structure gallium nitride power device of the invention.
Fig. 2(a) -2 (h) are schematic diagrams of a preparation process of a near junction area array microfluidic column of the present invention, wherein fig. 2(a) is a schematic diagram of a conventional preparation of a gallium nitride power device, fig. 2(b) is a schematic diagram of temporary bonding of a functional area of the gallium nitride power device, fig. 2(c) is a schematic diagram of thinning a substrate of the gallium nitride power device, fig. 2(d) is a schematic diagram of etching a microchannel, fig. 2(e) is a schematic diagram of temporary bonding of a sealing structure, fig. 2(f) is a schematic diagram of thinning of the sealing structure, fig. 2(g) is a schematic diagram of bonding and sealing of the microfluidic column, and fig. 2(h) is a schematic diagram of removing a temporary bonding carrier.
Detailed Description
The following describes in detail a specific embodiment of the present invention with reference to the drawings and examples.
Referring to fig. 1(a) to fig. 1(b), the invention provides an on-chip array microfluidic column heat dissipation structure gallium nitride power device and a manufacturing method thereof, wherein the high-efficiency heat dissipation gallium nitride power device comprises a device functional layer 1, a barrier layer 2, a buffer layer 3, a substrate 4 and an array microfluidic column 5 thereof from top to bottom, wherein the gallium nitride device substrate 4 is any one of Si, sapphire and SiC materials; the substrate layer is internally provided with an array micro-flow column 5, the array micro-flow column 5 is arranged below the device functional layer 1, the area is a near junction area, and the high-efficiency heat dissipation capability of the gallium nitride power device can be effectively realized through the heat exchange of microfluid.
Referring to fig. 2, the method for manufacturing a gallium nitride power device with an on-chip array micro-flow column heat dissipation structure provided by the invention comprises the following specific steps:
1) traditional preparation of gallium nitride power devices: completing the growth and preparation of a device functional layer to obtain a gallium nitride power device, as shown in fig. 2 (a);
2) designing and preparing a near junction area array microfluidic column;
design of an array microfluidic column: designing the size and distribution of a micro-flow column of a near junction area array according to the size of an active area of a finished gallium nitride power device, wherein the diameter size of the micro-flow column is 30-150 um, the center distance size is 2-3 times of the diameter, and the size of the micro-flow column area of the array is consistent with that of the active area;
temporary bonding of the functional region of the gallium nitride power device: coating a protective layer on the front surface of the finished gallium nitride power device to protect the functional region, wherein the protective layer can be oxide, nitride or BCB; bonding the front surface of the gallium nitride power device and the temporary slide by adopting a bonding technology, as shown in fig. 2 (b);
thinning the gallium nitride power device substrate: grinding and thinning the substrate of the gallium nitride power device by using a grinding machine, wherein the thickness of the residual substrate after thinning is 80-200 microns, as shown in fig. 2 (c);
fourthly, etching the microfluidic column: photoetching a designed micro-flow column etching pattern on a substrate of a gallium nitride power device, wherein the pattern on the substrate is positioned in a near junction area right below an active area of the gallium nitride power device, and etching the substrate through the near junction area micro-flow column by using a plasma etching machine until the distance from the substrate to a gallium nitride layer is 5-30 microns, so as to complete the etching of the near junction area micro-flow column, as shown in figure 2 (d);
temporary bonding of the sealing structure: coating a protective layer on one surface of the new substrate sheet to protect the substrate surface, wherein the protective layer can be oxide, nitride or BCB; bonding the front surface of the gallium nitride power device and the temporary slide by adopting a bonding technology, as shown in fig. 2 (e);
thinning of the sealing structure: grinding the new substrate sheet to thin by using a sheet grinding machine, wherein the thickness of the residual substrate after thinning is 5-15 microns, as shown in figure 2 (f);
bonding and sealing the microfluidic column: spin-coating a layer of temporary bonding material on the thinned surface of the new substrate, and bonding the substrate of the GaN power device embedded into the microfluidic column and the thinned surface of the new substrate at the temperature of 200-250 ℃ to complete the sealing of the microfluidic column at the near-junction region, as shown in FIG. 2 (g);
removing the temporary bonding slide: and removing the upper and lower groups of temporary bonding layers to realize the preparation of the near-junction micro-flow embedded high-efficiency heat dissipation gallium nitride power device, as shown in fig. 2 (h).
The present invention will be described in detail with reference to specific examples.
Some examples are as follows:
in one embodiment, the invention provides an on-chip array micro-flow column heat dissipation structure gallium nitride power device and a manufacturing method thereof, and the method specifically comprises the following steps:
1) completing the conventional front process of the gallium nitride power device to obtain the gallium nitride power device, wherein the substrate is made of SiC material, and the plane size of an active region is 2mm x 5 mm;
2) preparing the array microfluidic column in the near-junction area chip;
according to the size of the active area of the finished gallium nitride power device, the diameter of the near junction area array micro-flow column is designed to be 100um, the size of the array area is 2mm to 5mm, the center of the array area array micro-flow column is consistent with the center of a heat source, and the heat dissipation capacity and the reliability capacity of the array area array micro-flow column are fully met.
Secondly, coating a silicon oxide medium protective layer on the front surface of the finished gallium nitride power device to protect the functional area, and bonding the front surface of the gallium nitride power device with a temporary slide by adopting a bonding technology;
putting the gallium nitride power device containing the temporary slide into a sheet grinding machine, grinding and thinning the SiC substrate of the gallium nitride power device until the thickness of the gallium nitride power device is 80 microns;
photoetching a designed etching pattern of the array microflow column on a SiC substrate of the gallium nitride power device, wherein the pattern on the substrate is positioned in a near junction area right below an active area of the gallium nitride power device, and etching the SiC substrate at the near junction area microflow column by using a plasma etching machine until the distance from the SiC substrate to the gallium nitride layer is 10 microns;
coating a silicon oxide medium protective layer on one surface of a new SiC substrate to protect the substrate surface, and bonding the front surface of the gallium nitride power device with a temporary slide by adopting a bonding technology;
sixthly, putting the SiC substrate slice containing the temporary slide glass into a slice grinding machine, and grinding and thinning the SiC substrate slice until the thickness is 10 microns;
spin-coating a layer of BCB on the thinned surface of the SiC substrate containing the temporary slide glass, and bonding the substrate of the gallium nitride power device embedded into the microfluidic column and the thinned surface of the SiC substrate containing the temporary slide glass at the temperature of 200-250 ℃ relatively to complete the sealing of the microfluidic column at the near-junction region;
and removing the temporary bonding slide glass to realize the preparation of the micro-flow column heat dissipation structure gallium nitride power device in the chip.
The above embodiments and examples are specific supports for the technical ideas of the on-chip array micro-flow column heat dissipation structure gallium nitride power device and the manufacturing method thereof, and the protection scope of the invention should not be limited thereby, and any equivalent changes or equivalent modifications made on the basis of the technical scheme according to the technical ideas provided by the present invention still belong to the protection scope of the technical scheme of the present invention.
Claims (7)
1. The gallium nitride power device with the in-chip array micro-flow column heat dissipation structure sequentially comprises a device functional layer (1), a barrier layer (2), a buffer layer (3) and a substrate layer (4) from top to bottom, and is characterized in that an array micro-flow column (5) is arranged in the substrate layer (4), and the array micro-flow column (5) is arranged at a near-junction area below an active area.
2. The gallium nitride power device with the on-chip array micro-flow column heat dissipation structure as claimed in claim 1, wherein the array micro-flow column (5) is 5-15 microns away from the buffer layer (3) and 5-15 microns away from the back surface of the substrate layer (4), and the center of the array micro-flow column (5) corresponds to the position of the device functional layer (1) in the vertical direction.
3. The gallium nitride power device with the on-chip array micro-flow column heat dissipation structure as recited in claim 2, wherein the diameter of the array micro-flow column (5) is 30um-150um, the center-to-center distance is 2-3 times of the diameter, and the area of the array micro-flow column is consistent with the area of the device functional layer.
4. An on-chip array micro-fluidic column heat dissipation structure gallium nitride power device according to any one of claims 1, 2 or 3, wherein the material of the substrate layer (4) comprises any one of Si, sapphire or SiC.
5. A method for manufacturing a gallium nitride power device with an on-chip array micro-flow column heat dissipation structure, which is applied to the gallium nitride power device as claimed in claim 3, the method comprises the preparation of the gallium nitride power device and the preparation of a near-junction area array micro-flow column, wherein the preparation of the near-junction area array micro-flow column comprises the following steps:
1) coating a protective layer on the front surface of the finished gallium nitride power device, protecting the functional region, and bonding the front surface of the gallium nitride power device and the temporary slide glass by adopting a bonding technology;
2) grinding and thinning the substrate of the gallium nitride power device by using a grinding machine, wherein the thickness of the residual substrate after thinning is 80-200 microns;
3) photoetching an etching pattern of the array microflow columns on a substrate of the gallium nitride power device, wherein the etching pattern on the substrate is positioned in a near junction area right below an active area of the gallium nitride power device, and etching the near junction microflow columns on the substrate by using a plasma etching machine until the etching is stopped at a distance of 5-15 microns from a gallium nitride layer, so as to finish the etching of the near junction microflow columns;
4) coating a protective layer on one surface of a new substrate sheet to protect the substrate surface, and bonding the front surface of the gallium nitride power device with a temporary slide by adopting a bonding technology;
5) grinding and thinning the new substrate sheet by using a sheet grinding machine, wherein the thickness of the residual substrate after thinning is 5-15 microns;
6) spin-coating a layer of BCB on the thinned surface of the new substrate, and bonding the substrate of the gallium nitride power device embedded into the array microfluidic column and the thinned surface of the new substrate at the temperature of 200-250 ℃ relatively to complete the sealing of the near-junction microfluidic column;
7) and removing the two groups of temporary bonding slides to finish the preparation of the in-chip array micro-flow column heat dissipation structure gallium nitride power device.
6. The method as claimed in claim 5, wherein the protective layer in step 1 comprises any one of oxide, nitride or BCB.
7. The method as claimed in claim 5, wherein the protective layer in step 4 comprises any one of oxide, nitride or BCB.
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| CN108172556A (en) * | 2017-12-24 | 2018-06-15 | 中国电子科技集团公司第五十五研究所 | Miniflow heat dissipation gallium nitride transistor and its manufacturing method in piece based on atomistic binding |
| CN108198793A (en) * | 2017-12-24 | 2018-06-22 | 中国电子科技集团公司第五十五研究所 | It is a kind of closely to tie the embedded high efficiency and heat radiation gallium nitride transistor of miniflow and its manufacturing method |
| CN209947845U (en) * | 2019-04-29 | 2020-01-14 | 深圳市港祥辉电子有限公司 | Near-junction micro-flow embedded type high-efficiency heat-dissipation gallium nitride transistor |
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- 2021-07-08 CN CN202110774488.3A patent/CN113594111A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205211734U (en) * | 2015-12-25 | 2016-05-04 | 成都海威华芯科技有限公司 | Silicon microchannel heat dissipation gaN microwave power device |
| CN108172556A (en) * | 2017-12-24 | 2018-06-15 | 中国电子科技集团公司第五十五研究所 | Miniflow heat dissipation gallium nitride transistor and its manufacturing method in piece based on atomistic binding |
| CN108198793A (en) * | 2017-12-24 | 2018-06-22 | 中国电子科技集团公司第五十五研究所 | It is a kind of closely to tie the embedded high efficiency and heat radiation gallium nitride transistor of miniflow and its manufacturing method |
| CN209947845U (en) * | 2019-04-29 | 2020-01-14 | 深圳市港祥辉电子有限公司 | Near-junction micro-flow embedded type high-efficiency heat-dissipation gallium nitride transistor |
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