CN108364923A - Using the gallium nitride base power device and preparation method thereof of carbon nanotube microchannel heat sink - Google Patents
Using the gallium nitride base power device and preparation method thereof of carbon nanotube microchannel heat sink Download PDFInfo
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- CN108364923A CN108364923A CN201810025896.7A CN201810025896A CN108364923A CN 108364923 A CN108364923 A CN 108364923A CN 201810025896 A CN201810025896 A CN 201810025896A CN 108364923 A CN108364923 A CN 108364923A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
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Abstract
The invention discloses a kind of gallium nitride base power devices and preparation method thereof using carbon nanotube microchannel heat sink.The device includes the substrate being distributed from bottom to top, insulating medium layer, electrode pad, GaN base HEMT device, CNT microchannel heat sinks；The electrode pad includes source electrode pad, drain electrode pad, gate electrode pad；The GaN base HEMT device includes epitaxial layer structure and gate electrode, source electrode and drain electrode；The electrode of the GaN base HEMT device passes through electrode alignment, bonds and connects with substrate described in the electrode pad, realizes the encapsulating structure of upside-down mounting；Using CNT microchannel heat sinks as the extraneous heat dissipation channel with device surface on the substrate material of the GaN base HEMT device of upside-down mounting.The present invention is conducive to reduce the self-heating effect of GaN base HEMT, reduces device thermal resistance, and then promote GaN base HEMT thermal reliabilities in highfield and high temperature, high-power lower work.
Description
Technical field
The invention belongs to semiconductor microelectronic technology fields, more particularly to one kind to be carried by carbon nanotube microchannel heat sink
The new structure and preparation method thereof of high AlGaN/GaN HEMT flip device heat dissipation effects.
Background technology
GaN material has good calorifics and electric property and chemical stability, such as wide energy gap, high breakdown potential
Field, high heat conductance, corrosion-resistant and radioresistance etc. are the ideal materials for preparing high frequency, high temperature, high pressure, high power device.
There are extremely strong piezoelectric polarizations and spontaneous polarization effect for AlGaN/GaN hetero-junctions, are formed in heterojunction boundary highly concentrated
The two-dimensional electron gas (2DEG) of degree, the high electron mobility transistor (HEMT) based on AlGaN/GaN hetero-junctions is in power and penetrates
It is with a wide range of applications in terms of frequency device.With the promotion of device power density, the self-heating effect of device is apparent, device
Self-heating effect will cause channel temperature to increase, and seriously affect the further promotion of device electrically and thermally performance, and reduce
The reliability of device, and then constrain the extensive development of device application.For example, for GaN power devices, junction temperature often increases
10 DEG C, the service life of device will reduce by 10000 hours.At present in formal dress packaged type used by GaN power devices, device heat
Result from the raceway groove below grid, for heat basically by GaN layer, the metal layer below substrate layer and chip is dispersed into shell bottom
Face, hot-fluid, again by radiator, are transmitted in environment from shell.Promotion with GaN device power and long-term reliability work
The needs of work, to the heat dissipation of device, more stringent requirements are proposed.Therefore, using inverted structure, improve connecing for chip and radiator
It touches, the thermal resistance of device will be reduced by increasing the area of heat transfer, improve heat dissipation.
With the promotion of GaN base power device power density, electronic device is integrated in high-frequency high-power field is applied
And miniaturization so that the overall power density of unit volume electronic device increases substantially, and power consumption is largely converted into thermal energy, unit
The promotion of volume power consumption causes device junction temperature to significantly improve so that failing.Therefore, there is an urgent need to a kind of novel effectively reliable
Encapsulating structure reduces the thermal resistance of device, realizes the superior heat radiation of device, and then promote the long-term reliability of device.
Invention content
The present invention is directed to the problems such as heat dissipation effect is bad, and reliability is low under the positive assembling structure of GaN power devices, proposes a kind of base
In the novel inverted structure and preparation method thereof of CNT microchannel heat sinks, CNT microchannel heat sinks are used on inverted structure
It radiates, effectively reduces AlGaN/GaN HEMT device Peak Junction Temperatures, improve the current density of device, it is suppressed that device
Current collapse effect, and then improve GaN base microwave power device in stability that is high-power, working under condition of high voltage and reliable
Property.
The object of the present invention is to provide a kind of heat dissipation performances more preferably and reliable and stable encapsulating structure.In order to realize this hair
Bright purpose, the technical solution taken are as follows：
A kind of GaN base power device of novel inverted structure using CNT microchannel heat sinks, including substrate, insulation are situated between
Matter layer, electrode pad, GaN base HEMT device, CNT array radiator.The electrode pad includes source electrode pad, drain electrode weldering
Disk, gate electrode pad；Electrode pad is being covered on the baseplate material of insulating medium layer；The GaN base HEMT device includes outer
Prolong layer structure and gate electrode, source electrode and drain electrode；The electrode of GaN base HEMT device pass through electrode alignment, by electrode pad with
Substrate bonding connection, realizes the encapsulating structure of upside-down mounting；It is micro- logical using CNT on the substrate material of the GaN base HEMT device of upside-down mounting
Road radiator is as the extraneous heat dissipation channel with device surface.The substrate, insulating dielectric materials, electrode pad, GaN base power
Device, CNT microchannel heat sinks are distributed from bottom to top.
According to an embodiment of the invention, the material of the substrate is AlN or Al2O3Material.
According to an embodiment of the invention, the material of the insulating medium layer on the substrate is DLC (diamond-like) material.
According to an embodiment of the invention, the electrode pad on the substrate is disposed on the substrate, convenient and GaN base HEMT devices
Electrode on part is attached.
According to an embodiment of the invention, the epitaxy method of the epitaxial layer structure of the GaN base HEMT device material is using gold
Belong to organic chemical vapor deposition method.
According to an embodiment of the invention, the GaN base HEMT device substrate is silicon carbide substrates, Sapphire Substrate or Si
Substrate.
According to an embodiment of the invention, the GaN base HEMT device epitaxial layer is GaN high resistance buffer layers, GaN Gao Qian respectively
Shifting rate layer, AlGaN potential barrier and SiN passivation layers.
According to an embodiment of the invention, the CNT microchannel heat sinks orient life using carbon nanotube on different substrates
It is long, the self-align CNT array of high-purity, high density, Arbitrary distribution is prepared, the heat dissipation effect of device is further promoted.
A kind of side for the GaN base power device preparing the inverted structure described above using carbon nanotube microchannel heat sink
Method includes the following steps：
1) GaN base HEMT device is prepared；
2) insulating medium layer is deposited on substrate；
3) electrode pad is prepared on insulating medium layer；
4) by the GaN base HEMT device face-down bonding of preparation in the upper surface of substrate, the source electrode of GaN base HEMT device,
Drain electrode and gate electrode are connected respectively at source electrode pad corresponding on substrate, drain electrode pad and gate electrode pad；
5) after the CNT array for preparing oriented growth, GaN base HEMT devices in the silicon chip and inverted structure of CNT array will be loaded with
The substrate portions of part are bonded together.
There are weak heat-dissipating, reliable long-term workings under the conditions of high power work for existing GaN HEMT devices by the present invention
Low problem proposes the inverted structure of the diamond-like of high heat conductance and CNT array radiator combination chip reducing device
Thermal resistance, improve heat dissipation.Formal dress HEMT chip heats result from the raceway groove below grid, and heat is basically by GaN layer, substrate
Metal layer below layer and chip is dispersed into shell bottom surface, and hot-fluid, again by radiator, is transmitted in environment from shell.Therefore,
The present invention uses inverted structure, improves contact of the chip with radiator, the thermal resistance of device will be reduced by increasing the area of heat transfer, even
Change heterogeneity phantom, increase the ability of chip and extraneous heat exchange, improves heat dissipation.In order to further increase the effect of heat dissipation,
The packing material between insulating dielectric materials and pad on substrate uses the diamond-like materials with high heat conductance can be with
Accelerate the conduction of the heat on chip, in addition, the method for installation CNT array radiator is used on the substrate material after upside-down mounting,
Further increase chip and extraneous heat conducting power.Therefore, this novel GaN base HEMT device inverted structure reduces device
The thermal resistance of part, and then reduce the peak value thermal resistance of device, be conducive to promote device performance and improve the long-term reliability of device.
Insulating materials in the present invention on substrate uses diamond-film-like (DLC), diamond-film-like to have splendid thermal conductivity
(600-1200W/mk), the thermal diffusivity with 12 times of copper, the remarkable advantages such as the high strength of materials, high corrosion resistance are used for substrate
On insulating radiation layer, the thermal conductivity of substrate can be made to promote hundred times, and DLC and epitaxial material will not be produced compared with matching because of heat
Heat stress.DLC serves not only as the insulating materials on substrate in the present invention, while also as the packing material between pad, into
The area for increasing heat dissipation of one step, to improve the thermal stability of device and the reliability of long-term work.
At the same time, the present invention using carbon nanotube (CNT) microchannel heat sink as the heat dissipation channel after inverted structure,
By the further heat dissipation performance for promoting GaN base power device.Carbon nanotube (CNT) has very excellent heat conductivility, high-purity
Degree, high density, Arbitrary distribution self-align CNT array as microchannel heat sink, chip back and the external world will be effectively improved
Between heat-exchange capacity.Therefore, in order to improve the thermal reliability of SiC base GaN power devices, by using DLC materials on substrate
Material is used as insulating radiation layer, plays the role of heat transfer, meanwhile, by certain optimization design, do not influencing device performance
Under the premise of, the GaN base HEMT inverted structures based on CNT microchannel heat sinks further improve the effect of heat dissipation, to improve
Thermal reliability when device works under high temperature, high pressure.
Description of the drawings
Fig. 1 is that a kind of highly reliable A lGaN/GaN high electronic migration rate transmistor epitaxial structures of the embodiment of the present invention are illustrated
Figure.
Fig. 2 is the schematic top plan view of the AlGaN/GaN chips of the embodiment of the present invention.
Fig. 3 is the distribution map of pad on the substrate of the embodiment of the present invention being covered with after DLC insulating medium layers.
Fig. 4 is the embodiment of the present invention using the flip device overall structure figure after CNT microchannel heat sinks.
Specific implementation mode
The heat dissipation of AlGaN/GaN high electron mobility transistor is improved using CNT array radiator the present invention relates to a kind of
Novel inverted structure.To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment,
And with reference to attached drawing, the present invention is described in more detail.
Fig. 1 shows a kind of highly reliable A lGaN/GaN high electronic migration rate transmistor epitaxial structures of the embodiment of the present invention
Schematic diagram comprising with lower part：
[1]：Under the premise of knowing conventional AlGaN/GaN device architectures, the substrate material 1 of chip is SiC, sapphire or
Si materials.
[2]：Under the premise of knowing conventional AlGaN/GaN device architectures, the GaN high resistance buffer layers 2 of the epitaxial structure of chip.
[3]：Under the premise of knowing conventional AlGaN/GaN device architectures, the GaN high electron mobilities of the epitaxial structure of chip
Layer 3.
[4]：Under the premise of knowing conventional AlGaN/GaN device architectures, the AlGaN potential barrier 4 of the epitaxial structure of chip.
[5]：Under the premise of knowing conventional AlGaN/GaN device architectures, SiN is deposited on epitaxial materialxLayer 5, as blunt
Change layer.
[6]：Under the premise of knowing conventional AlGaN/GaN device architectures, source electrode 6 is prepared on it.
[7]：Under the premise of knowing conventional AlGaN/GaN device architectures, drain electrode 7 is prepared on it.
[8]：SiN is etched away between the source electrode and drain electrodexSurface donor layer forms the areas Shan Cao；Described
The areas Shan Cao formed gate electrode 8.
Fig. 2 shows the top plan view structural schematic diagram of AlGaN/GaN chips, which is the vertical view of ten finger structure devices
The grid of figure, dark line shows therein device refer to part.
[9]：The source electrode 6 prepared on it, electrode use Ti/Al/Ni/Au, are made by way of electron beam evaporation.
[10]：The drain electrode 7 prepared on it, electrode use Ti/Al/Ni/Au, the system by way of electron beam evaporation
.
[11]：The gate electrode 8 prepared on it, electrode use Ni/Au, are made by way of electron beam evaporation.
Fig. 3 shows the distribution map of pad on the substrate after being covered with DLC insulating medium layers.
[12] wherein diamond-like DLC is as insulating medium layer, by the method for CVD, by DLC film be deposited on AlN or
Person Al2O3Substrate on.Metal pad is prepared on it, is specifically shown in schematic top plan view 3.
[13] wherein the material of metal pad can be a kind of, a variety of or its alloy in Ag, Au, Al, Cu, Cr, Ni,
Position distribution is as shown in Figure 3.The technique for making metal pad can be evaporation, plating, metal wire plant ball technique.
[14] flip-chip is connected on to the upper surface of substrate.By solder reflow, anisotropic conducting film heating, apply
External force or eutectic mode is added to weld source electrode, drain electrode and the gate electrode on chip respectively at source electrode corresponding on substrate
Disk 9, drain electrode pad 10 and gate electrode pad 11 realize connection.
[15] in order to increase the area of heat dissipation, diamond-film-like is attached in the side wall of the pad.
Fig. 4 shows the integrally-built sectional view of GaN base power device inverted structure.Including substrate 12, on substrate
DLC dielectrics film 13, source electrode pad 9 thereon, drain electrode pad 10, soldered ball 14, source electrode 6, drain electrode 7, grid electricity
Pole 8, AlGaN potential barrier 15, GaN high mobilities layer and high resistance buffer layer 16, substrate 17, CNT microchannel heat sinks 18, specifically
It is bright as follows：
[16] 12 material of the substrate is AlN or Al2O3
[17] dielectric 13 on substrate is diamond-like (DLC) material, by chemical vapor deposition (CVD) or wait from
Daughter enhances chemical vapor deposition (PECVD) and grows DLC on 12 surface of substrate.Since diamond-film-like has thermal conductivity high, hard
Firmly, the excellent specific properties such as wear-resisting, deposition on the substrate 12, play heat dissipation and protective effect well.
[18] metal electrode layer is grown on insulating medium layer by electroplating technology.Pass through reactive ion etching, grinding, throwing
The techniques such as light obtain metal pad wherein source metal pads 9, leak metal pad 10.
[19] method that GaN base HEMT chips are used into upside-down mounting, by Au-Sn solders (soldered ball 14 in Fig. 4), by chip
Face-down bonding is on substrate.It will be on chip by solder reflow, anisotropic conducting film heating, application external force or eutectic mode
Electrode 6,7 and 8 realize electrical connection respectively at corresponding pad bonding on insulating layer.
[20] source electrode 6 in GaN base HEMT device, electrode metal Ti/Al/Ni/Au, the metal on electrode pass through electricity
The method of beamlet evaporation is realized.
[21] drain electrode 7 in GaN base HEMT device, electrode metal Ti/Al/Ni/Au, the metal on electrode pass through electricity
The method of beamlet evaporation is realized.
[22] gate electrode 8 in GaN base HEMT device, electrode metal Ni/Au, the metal on electrode are steamed by electron beam
The method of hair is realized.
[23] AlGaN/GaN based hemts epitaxial part realizes the growth of AlGaN potential barrier 15 using the method for MOCVD.
[24] AlGaN/GaN based hemts epitaxial part realizes GaN high mobilities layer and GaN high resistants using the method for MOCVD
The growth of buffer layer 16.
[25] AlGaN/GaN based hemts substrate 17, substrate can be SiC substrate, Sapphire Substrate or Si substrates.
[26] CNT microchannel heat sinks 18 are formed by CNT array in the present invention.CNT uses the side of chemical vapor deposition
It is prepared by method.As shown in figure 4, these CNT clusters arranged in parallel constitute the heat sink material of microchannel heat sink, radiator is constituted
Major part.After the CNT array of oriented growth is prepared, with the method for bonding the silicon chip and upside-down mounting knot for being loaded with CNT array
The substrate portions of structure are bonded together.Wherein the size of array radiator is designed according to the heating power of device.
The structure without CNT microchannel heat sinks with size is compared, under identical power condition, of the invention has
The heat dissipation effect of CNT microchannel heat sinks can improve 40% better than conventional such as Si base microchannel heat sinks.The tool of the present invention
There are the gallium nitride base power device of CNT radiating structures, stability and long-term reliability that will be greatly improved, it can
Reference is provided for the timely and effective heat dissipation applied to the following high-power chip.
The present invention is in the GaN base HEMT device structure of the radiator structure of CNT, using carbon nanochannel structure as heat dissipation
Device, width between the height of radiator, channel and the regional extent for enclosing more HEMT chips, have it is prodigious flexibly
Property, thermal design is carried out to radiator, obtains high-performance, highly reliable device.
The present invention can also have various embodiments, be such as improved to substrate, enhance diamond-film-like or diamond film
Combined between substrate and reinforce substrate insulating Design multilayered structure.Above example is only to illustrate the skill of the present invention
Art scheme rather than be limited, those skilled in the art can modify to technical scheme of the present invention or
Equivalent replacement, without departing from the spirit and scope of the present invention, protection scope of the present invention should be subject to described in claims.
Claims (10)
1. a kind of GaN base power device of inverted structure using carbon nanotube microchannel heat sink, which is characterized in that including certainly
Substrate, insulating medium layer, electrode pad, GaN base HEMT device, the CNT microchannel heat sinks of lower and upper distribution；The electrode weldering
Disk includes source electrode pad, drain electrode pad, gate electrode pad；The GaN base HEMT device includes epitaxial layer structure and grid electricity
Pole, source electrode and drain electrode；The electrode of the GaN base HEMT device pass through electrode alignment, described in the electrode pad with base
Plate bonding connection, realizes the encapsulating structure of upside-down mounting；The microchannels CNT are used on the substrate material of the GaN base HEMT device of upside-down mounting
Radiator is as the extraneous heat dissipation channel with device surface.
2. the GaN base power device of the inverted structure according to claim 1 using carbon nanotube microchannel heat sink,
It is characterized in that, the substrate is AlN or Al2O3。
3. the GaN base power device of the inverted structure according to claim 1 using carbon nanotube microchannel heat sink,
It is characterized in that, the insulating medium layer of diamond-like materials is covered on the substrate, as heat dissipating layer.
4. the GaN base power device of the inverted structure according to claim 3 using carbon nanotube microchannel heat sink,
It is characterized in that, the diamond-like materials are deposited on by chemical vapor deposition or plasma enhanced chemical vapor deposition method
Substrate surface.
5. the GaN base power device of the inverted structure according to claim 1 using carbon nanotube microchannel heat sink,
It is characterized in that, the epitaxy method of the epitaxial layer structure of the GaN base HEMT device uses metal-organic chemical vapor deposition equipment side
Method.
6. the GaN base power device of the inverted structure according to claim 1 using carbon nanotube microchannel heat sink,
It is characterized in that, the substrate is silicon carbide substrates, Sapphire Substrate or Si substrates.
7. the GaN base power device of the inverted structure according to claim 1 using carbon nanotube microchannel heat sink,
It is characterized in that, the epitaxial layer structure of the GaN base HEMT device includes GaN high resistance buffer layers, GaN high mobility layers, AlGaN gesture
Barrier layer, SiN passivation layers.
8. the GaN base power device of the inverted structure according to claim 1 using carbon nanotube microchannel heat sink,
It is characterized in that, diamond-film-like is attached in the side wall of the electrode pad, to increase heat dissipation area.
9. the GaN base power device of the inverted structure according to claim 1 using carbon nanotube microchannel heat sink,
Be characterized in that, the CNT microchannel heat sinks, using carbon nanotube on different substrates oriented growth, prepare high-purity, highly dense
The self-align CNT array of degree, Arbitrary distribution, to promote the heat dissipation effect of device.
10. using the system of the GaN base power device of the inverted structure of carbon nanotube microchannel heat sink described in a kind of claim 1
Preparation Method, which is characterized in that include the following steps：
1) GaN base HEMT device is prepared；
2) insulating medium layer is deposited on substrate；
3) electrode pad is prepared on insulating medium layer；
4) by the GaN base HEMT device face-down bonding of preparation in the upper surface of substrate, the source electrode of GaN base HEMT device, electric leakage
Pole and gate electrode are connected respectively at source electrode pad corresponding on substrate, drain electrode pad and gate electrode pad；
5) after the CNT array for preparing oriented growth, GaN base HEMT device in the silicon chip and inverted structure of CNT array will be loaded with
Substrate portions are bonded together.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524814A (en) * | 2020-03-30 | 2020-08-11 | 中国电子科技集团公司第二十九研究所 | Preparation method of high-reliability and high-density integrated structure of power device |
| CN112802815A (en) * | 2020-12-29 | 2021-05-14 | 河北博威集成电路有限公司 | GaN microwave power device special for 5G communication and packaging process thereof |
| WO2024087083A1 (en) * | 2022-10-27 | 2024-05-02 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor packaged device and method for manufacturing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169838A (en) * | 2011-03-15 | 2011-08-31 | 上海大学 | Manufacturing method of carbon nano-tube micro-channel cooler system |
| CN102646702A (en) * | 2011-02-16 | 2012-08-22 | 富士通株式会社 | Semiconductor device, and method of manufacturing semiconductor device |
| CN104538304A (en) * | 2014-12-24 | 2015-04-22 | 中国科学院半导体研究所 | Manufacturing method of gallium-nitride-based high-electron-mobility transistor of flip-chip structure |
| US20160049351A1 (en) * | 2014-08-15 | 2016-02-18 | Board Of Regents University Of Oklahoma | High-Power Electronic Device Packages and Methods |
-
2018
- 2018-01-11 CN CN201810025896.7A patent/CN108364923B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646702A (en) * | 2011-02-16 | 2012-08-22 | 富士通株式会社 | Semiconductor device, and method of manufacturing semiconductor device |
| CN102169838A (en) * | 2011-03-15 | 2011-08-31 | 上海大学 | Manufacturing method of carbon nano-tube micro-channel cooler system |
| US20160049351A1 (en) * | 2014-08-15 | 2016-02-18 | Board Of Regents University Of Oklahoma | High-Power Electronic Device Packages and Methods |
| CN104538304A (en) * | 2014-12-24 | 2015-04-22 | 中国科学院半导体研究所 | Manufacturing method of gallium-nitride-based high-electron-mobility transistor of flip-chip structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524814A (en) * | 2020-03-30 | 2020-08-11 | 中国电子科技集团公司第二十九研究所 | Preparation method of high-reliability and high-density integrated structure of power device |
| CN112802815A (en) * | 2020-12-29 | 2021-05-14 | 河北博威集成电路有限公司 | GaN microwave power device special for 5G communication and packaging process thereof |
| CN112802815B (en) * | 2020-12-29 | 2022-10-11 | 河北博威集成电路有限公司 | GaN microwave power device special for 5G communication and packaging process thereof |
| WO2024087083A1 (en) * | 2022-10-27 | 2024-05-02 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor packaged device and method for manufacturing the same |
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| CN108364923B (en) | 2020-02-21 |
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