CN103489838B - A kind of enhance heat three-dimension packaging structure and method for packing thereof - Google Patents
A kind of enhance heat three-dimension packaging structure and method for packing thereof Download PDFInfo
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- CN103489838B CN103489838B CN201310481621.1A CN201310481621A CN103489838B CN 103489838 B CN103489838 B CN 103489838B CN 201310481621 A CN201310481621 A CN 201310481621A CN 103489838 B CN103489838 B CN 103489838B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/1627—Disposition stacked type assemblies, e.g. stacked multi-cavities
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of enhance heat three-dimension packaging structure and method for packing thereof.Enhance heat three-dimension packaging structure of the present invention comprises: multilager base plate, device on substrate and interconnection circuit, microchannel, heating panel, external radiating device and water pump.Most heats that one aspect of the present invention utilizes microfluid convective heat transfer mode to be produced by heater members are led away fast; Utilize the three-dimensional interconnection circuit that the metal good conductor be connected with heater members in substrate is formed on the other hand, adopt the mode of metal heat conduction to export to auxiliary for heat in substrate with outside substrate.The heating panel of the bottom of substrate can connect the external radiating device of number of different types, efficiently solves the problem that multi-chip electronic product thermic lost efficacy.Present invention process condition realizes simple, and cost is low, is convenient to batch machining, can be widely used in the field that Aero-Space, information communication, biochemistry, a lot of relation national economic development such as medical treatment, automatically control and consumer electronics etc. and national security ensure.
Description
Technical field
The present invention relates to the heat dissipation technology of microelectronic component, particularly relate to a kind of micro element enhance heat three-dimension packaging structure based on layer multilayer packaging substrate technology and method for packing thereof.
Background technology
The Information technology of society and the development of microelectric technique make electronic device present the development trend of miniaturization, high performance and multifunction, the MCM multi-chip module of integrated multiple micro element, micro-structural, transducer, actuator, signal transacting, control circuit, interface, communication and power supply and microsystems technology obtain and develop rapidly, and the manufacturing process such as its chip manufacture, integrated assembling and packaging and testing are all more complicated than the integrated circuit of planar technique.Encapsulate the final step be shaped as microelectronic product; properties of product, volume, cost, reliability and the key in life-span; need to produce while minimal effects in microchip performance to provide protection, power supply and cooling to these chips or components and parts, and physics is provided, is electrically connected or interface with the outside such as mechanical.
Along with the develop rapidly of microchip/micro-machining manufacture technology, nanoscale chip monolithic realizes industrialized mass, the basis of traditional planar package and multichip module technology progressively develops wiring densification, inter-level interconnects become more meticulous and the three-dimensional systematic encapsulation technology of structural upright, wherein layer multilayer packaging substrate technology is most widely used, and comprises multiple baseplate material and the technologies such as PCB printed circuit board (PCB), thick film ceramic, High Temperature Co Fired Ceramic, LTCC, depositing metal film.The number of plies of layer multilayer packaging substrate is up to more than hundred layers, Chip Vertical interconnects, and packaging efficiency is up to more than 200%, and power consumption loss is low, Signal transmissions fast, institute is disturbed little, multiple difference in functionality is together chip-stacked, greatly reduces size and the weight of electronic product.The material thermal expansion coefficient of layer multilayer packaging substrate is little, and temperature coefficient is low; The circuit substrate that the number of plies is very high can be made, realize high-density multi-layered solid wiring, facilitate the interconnection between circuit and the electrical interconnection with the external world; Good mechanical performance, reliability is high, can work in the adverse circumstances such as high temperature, high humidity, shock and vibration; Processing method is ripe, and processing compatibility is good, and raw material sources is extensive, and with low cost, fabrication cycle is short, and production efficiency is high.In recent years, 3-dimensional multi-layered base plate for packaging technical development is very fast, as carrier and the platform of electronic device, except arranging three-dimensional circuit transmission line wherein, also can by various components and parts, passive device, active device and other modules are embedded in substrate, be widely used in wireless telecommunications, Global electrical circuiti, antenna, optical fiber cable, minitype optical device, Mierotubule-associated proteins, microrobot, micro-fluidic chip, the Aero-Space closely-related with human social development such as notebook computer and high-performance computer, information communication, traffic, medical treatment, household electrical appliances, multiple field such as the energy.
But electronic device, while increasing substantially integrated level and multi-functional degree, also makes the caloric value on unit volume/area sharply rise, along with the lifting of the number of plies stacking in 3-dimensional multi-layered base plate for packaging, heat radiation becomes very difficulty.Research shows that the inefficacy of air environment 55% is caused by temperature, and electronic device working temperature is 70 ~ 80 DEG C time, and temperature often raises 1 DEG C, and device reliability declines 5%, and temperature often reduces by 10 DEG C, and failure rate can reduce 4%.Along with the development of microelectric technique, device size is more and more less, develops from micron dimension to nanometer scale, and the integrated level of device increases progressively with annual 40% ~ 50% high speed, each chip has into hundred up to ten thousand elements, the density of heat flow rate of high performance chips is more than 150W/cm
2.The heat produced as fruit chip can not be derived in time, and the temperature of substrate constantly raises, and will directly affect the operating efficiency of electronic chip, also can burn out chip time serious.Planar package technology can install heat abstractor on packaging body surface, reduces the chip temperature near surface, but cannot solve the heat dissipation problem of MCM multi-chip module inside chip.Therefore, the heat dissipation problem of three-dimension packaging structure is more serious.
In the even nano level device dimension of millimeter, high heat will be taken away, traditional electronic equipment dissipating heat technology is no longer suitable for: the density of heat flow rate of the natural cooling heat dissipations such as convection current, radiation, conduction is no more than 0.155W/cm
2; The density of heat flow rate of metal fever through hole and wind-cooling heat dissipating is no more than 10W/cm
2, advanced Jet Cooling can be used for 100W/cm
2operational environment, but technical requirement is high, application is more difficult; Heat pipe heat radiation can be used for density of heat flow rate and is greater than 100W/cm
2device heat radiation, can manufacture that volume is very little, the product of very light in weight, but be subject to the restriction of the working limits such as density of heat flow rate, flow resistance, capillary pressure reduction, after using a period of time, heat transfer property can decline; Thermoelectric cooling utilizes semi-conducting material (as Bi
2te
3) Peltier effect, absorb respectively at the two ends of galvanic couple and release heat, noiseless and vibrations, volume is little, compact conformation, convenient operating maintenance, does not need cold-producing medium, regulate refrigerating capacity and refrigerating speed by changing size of current, but efficiency is low, cost is high.
Summary of the invention
For above prior art Problems existing, the present invention proposes a kind of microchannel of the layer multilayer packaging substrate of high integration, high reliability, high-performance and low cost embedded cooling that utilizes and method for packing and the three-dimension packaging structure of enhance heat is carried out to heater members, utilize the advantage of the high thermal conductivity coefficient of the metal good conductor forming three-dimensional interconnection circuit and reliably changeable external heat sink simultaneously, realize flash heat transfer and the heat radiation of the multi-chip module/micro-system of simple and practical, high efficient and reliable.
One object of the present invention is to provide a kind of enhance heat three-dimension packaging structure.
Enhance heat three-dimension packaging structure of the present invention comprises: the interconnection circuit of multilager base plate, device on substrate and interface unit, microchannel, heating panel, external radiating device and water pump; Wherein, microchannel is included in the corresponding via hole in the position of the vertical direction between the groove of the horizontal direction on each laminar substrate and each laminar substrate, forms the passage of interconnection; Heating panel is arranged on the bottom of multilager base plate; Heating panel is connected with external radiating device; The bottom of substrate is provided with the interface of water pump, and the port of microchannel connects water pump by interface.
Surface or the built-in device of substrate comprise heater members, passive device and active device; Heater members comprises components and parts, instrument or heat pipe; Passive device comprises capacitor, inductor, resistor, connector, transformer and relay etc.; Active device comprises electron tube, transistor, amplifier, modulator, demodulator, oscillator and power supply etc.
In enhance heat three-dimension packaging structure of the present invention, in order to efficiently radiates heat, interconnection circuit adopts wider wiring width, and the width of wiring is 0.2 ~ 10mm, and the spacing of wiring is not less than 0.1mm.Interconnection circuit selects the metal good conductors such as Au, Ag, Cu of high conductivity and thermal conductivity as the planar circuit of interconnection circuit and via fill, not only can improve the quality factor of Circuits System, reduce loss of signal, also due on distributing position more close to heater members, realize partial heat by heat conducting mode and conduct fast.
Groove on each laminar substrate and the via hole between each laminar substrate form the microchannel of interconnection, and the liquid stream of carrying out cooling, through microchannel, forms microfluid heat radiation.Microfluid heat radiation is more satisfactory radiating mode, as the principal mode of liquid cools, liquid evaporation endothermic or directly heat is taken away when flowing through microchannel, direct liquid cools technology can also be avoided to there is the problems such as seepage in actual applications, radiating effect is very good, and theory can be used for density of heat flow rate 1000W/cm
2operational environment.The groove of any two levels of microchannel or the spacing of vertical via hole will exceed the thickness of single layer substrate, and high-power heater members adopts increases the sectional dimension of microchannel and the method for distribution density.The position of the external lead wire of built-in device is avoided in microchannel, and around being distributed in around device, the distance between microchannel and device is the thickness of 0 ~ 10 times of single layer substrate.The shape of microchannel comprises many row's straight trough shapes, serpentine and fractal.
The bottom of substrate is provided with the interface of built-in Micropump or external circulating water pump.Built-in Micropump is thermal drivers Micropump, shape memory film drives in Micropump, piezoelectric micropump, electric osmose Micropump, Electromagnetic Drive Micropump, shrinkage expansion Micropump and the rotary Micropump of micro motor one or more.Built-in Micropump or outside water pump order about the liquid carrying out cooling and flow in microchannel, take away heat and conduct heat.Liquid adopts the cooling fluids such as water, ethylene glycol, alcohol, glycerine.
Heating panel adopts fin type heat-dissipating metal sheet, material adopt in aluminium, copper, iron, silver, gold, magnesium, nickel, cobalt, titanium, manganese, lead and alloy material thereof one or more.
External radiating device comprises radiated rib, fan, cooling heat pipe and water cooling plant etc.
Adopt augmentation of heat transfer and heat dissipation technology in the inside of packaging body and surface simultaneously, the heat that inside chip/device produces is derived rapidly, simultaneously in conjunction with external heat sink, the heat of derivation is diffused in external environment again.In addition, select the metal good conductor of high conductivity and thermal conductivity as interconnection circuit, not only can improve the quality factor of Circuits System, reduce loss of signal, also due on distributing position more close to heater members, realize partial heat by heat conducting mode and conduct fast.Therefore microchannel and interconnection circuit enhance heat three-dimension packaging structure reasonable in design, not only can meet micro element high integration, multi-functional, microminiaturized demand, can also realize the integrated design of heat management, solve day by day urgent thermic Problem of Failure.
Another object of the present invention is the method for packing providing a kind of enhance heat three-dimension packaging structure.
The method for packing of enhance heat three-dimension packaging structure of the present invention, comprises the following steps:
1) according to the needs of built-in and surperficial heater members, the position of design interconnection circuit, passive device and active device;
2) according to size and the power of heater members, the shape of microchannel, size and distribution is designed;
3) position of the built-in Micropump of the bottom design of substrate or external water pump;
4) on the substrate of every one deck, make the through hole of interconnection circuit, the groove of the cavity of device and microchannel and via hole;
5) on the substrate of every one deck, type metal good conductor, as the via fill of planar circuit and vertical direction, forms three-dimensional interconnection circuit;
6) fixing passive device and active device, the heater members of coated with thermally conductive insulating cement is connected with interconnection circuit, fixes and is connected water pump;
7) in the via hole of microchannel and the cavity of device, sacrificial layer material is filled, by accurate for multilager base plate lamination contraposition;
8) corresponding layer multilayer packaging substrate technology is adopted to process the integrated substrate of integrated heater members, microchannel, interconnection circuit;
9) heating panel is prepared in the bottom of substrate, and connects external radiating device, is diffused in external environment by the heat that the microfluid in packaging body and interconnection circuit are derived again.
Advantage of the present invention:
Enhance heat three-dimension packaging structure provided by the invention, not only can dispel the heat to the micro element of three-dimension packaging surface, can also carry out enhance heat to built-in micro element.Utilize layer multilayer packaging substrate technology to be easy to the advantage of machining 3 D structure on the one hand, in substrate, produce microchannel, the most heats utilizing microfluid convective heat transfer mode to be produced by heater members are led away fast; On the other hand, utilize the metal good conductor be connected with heater members in substrate to form three-dimensional interconnection circuit, adopt the mode of metal heat conduction to export to auxiliary for heat in substrate with outside substrate.The combination of two kinds of heat transfer types is by the heat transfer greatly strengthened in packaging body and heat-sinking capability, and the heating panel of the bottom of substrate can connect the external radiating device of number of different types, efficiently solves the problem that multi-chip electronic product thermic lost efficacy.In addition, enhance heat three-dimension packaging structural manufacturing process condition provided by the invention realizes simple, cost is low, be convenient to batch machining, combine the advantage of convective heat transfer and thermal conductance heat transfer, ensure that heater members normally works under harsh thermal environment, be specially adapted to high-power, High Density Integration and microelectronic device, Aero-Space, information communication, biochemistry, medical treatment can be widely used in, automatically control and field that a lot of relation national economic development such as consumer electronics and national security ensure.
Accompanying drawing explanation
Fig. 1 is the schematic perspective view of an embodiment of enhance heat three-dimension packaging structure of the present invention;
Fig. 2 is the profile of an embodiment of enhance heat three-dimension packaging structure of the present invention.
Embodiment
Below in conjunction with accompanying drawing, by embodiment, the present invention will be further described.
Fig. 1 and Fig. 2 is respectively schematic perspective view and the profile of an embodiment of enhance heat three-dimension packaging structure of the present invention.As depicted in figs. 1 and 2, enhance heat three-dimension packaging structure of the present invention comprises: the interconnection circuit 3 of multilager base plate 1, device 2 on substrate and interface unit, microchannel 4, heating panel 5, external radiating device and water pump 6; Wherein, microchannel 4 is included in the corresponding via hole 42 in the position of the vertical direction between the groove 41 of the horizontal direction on each laminar substrate and each laminar substrate, forms the passage of interconnection; Heating panel 5 is arranged on the bottom of multilager base plate 1; Heating panel 5 is connected with external radiating device; The bottom of substrate 1 is provided with the interface 43 of water pump, and the port of microchannel 4 connects water pump by interface 43.
In the present embodiment, water pump 6 adopts built-in Micropump.Interconnection circuit 3 comprises the via fill 32 of the vertical direction between planar circuit 31 on each laminar substrate and each laminar substrate, forms three-dimensional interconnection circuit.
The method for packing of the enhance heat three-dimension packaging structure of the present embodiment, comprises the following steps
1) according to the needs of built-in and surperficial heater members, the position of design interconnection circuit, passive device and active device;
2) according to size and the power of heater members, design the shape of microchannel, size and distribution, the groove of any two levels of microchannel or the level interval of vertical via hole will exceed the thickness of the substrate of individual layer, high-power heater members adopts increases the sectional dimension of microchannel and the method for distribution density, the position of built-in heating device external lead wire is avoided in microchannel, around being distributed in chip circumference, the distance between microchannel and device is 0 ~ 10 times of single layer substrate thickness;
3) position of the built-in Micropump of the bottom design of substrate;
4) adopt the method for machine drilling, punching, laser drilling or etching, the substrate of every one deck makes the through hole of interconnection circuit, the groove of the cavity of device and microchannel and via hole;
5) on the substrate of every one deck, print the metal good conductors such as Cu, Ag, Au as planar circuit and via fill, form three-dimensional interconnection circuit, and adopt wider wiring width, the width of wiring is 0.2 ~ 10mm, and the spacing of wiring is not less than 0.1mm;
6) to be welded by brazing metal or passive device and active device are fixed in soldering, one deck thermal conductive insulation glue 21 is applied in the surrounding of built-in heater members, the bottom of the heater members on surface applies one deck thermal conductive insulation glue, thermal conductive insulation glue thickness is 0 ~ 1mm, device is pasted onto in the cavity of substrate, the lead-in wire of device and the interconnection of substrate are welded together, fixes and be connected water pump;
7) at groove and the via hole of prefabricated microchannel, and fill the materials such as paraffin in cavity as sacrificial layer material, adopt the mode of layering precompressed, substrate multilayer pressed in advance adopts the method for location hole or image recognition location to make the accurate lamination contraposition of multilager base plate material;
8) for different baseplate materials, adopt the substrate package technology such as PCB multilayer board, thick film ceramic, LTCC, High Temperature Co Fired Ceramic, metal deposition film respectively, manufacture the base plate for packaging of embedded cooling microchannel, the planar circuit between each laminar substrate is connected by via fill;
9) base plate bottom welding, bonding, sputtering or deposition fin type heat-dissipating metal sheet, can adopt the cooling of external fin air natural, fan forced convection heat exchange, external cooling heat pipe or external water cooling plant to dispel the heat.
It is finally noted that, the object publicizing and implementing mode is to help to understand the present invention further, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various substitutions and modifications are all possible.Therefore, the present invention should not be limited to the content disclosed in embodiment, and the scope that the scope of protection of present invention defines with claims is as the criterion.
Claims (9)
1. an enhance heat three-dimension packaging structure, it is characterized in that, described enhance heat three-dimension packaging structure comprises: the interconnection circuit (3) of multilager base plate (1), device (2) on substrate and interface unit, microchannel (4), heating panel (5), external radiating device and water pump (6); Wherein, described microchannel (4) are included in the corresponding via hole (42) in the position of the vertical direction between the groove (41) of the horizontal direction on each laminar substrate and each laminar substrate, form the passage of interconnection; Described heating panel (5) is arranged on the bottom of multilager base plate (1); Described heating panel (5) is connected with external radiating device; The bottom of described substrate (1) is provided with the interface (43) of water pump, and the port of described microchannel (4) connects water pump by interface (43); The groove of any two levels of described microchannel (4) or the level interval of vertical via hole will exceed the thickness of single layer substrate.
2. enhance heat three-dimension packaging structure as claimed in claim 1, is characterized in that, described interconnection circuit (3) adopts the metal good conductor of high conductivity and thermal conductivity.
3. enhance heat three-dimension packaging structure as claimed in claim 1, it is characterized in that, the position of the external lead wire of built-in device is avoided in described microchannel (4), around being distributed in around device, the distance between described microchannel (4) and device (2) is the thickness of 0 ~ 10 times of single layer substrate.
4. enhance heat three-dimension packaging structure as claimed in claim 1, it is characterized in that, described water pump (6) is built-in Micropump or external circulating water pump; Described built-in Micropump is thermal drivers Micropump, shape memory film drives in Micropump, piezoelectric micropump, electric osmose Micropump, Electromagnetic Drive Micropump, shrinkage expansion Micropump and the rotary Micropump of micro motor one or more.
5. enhance heat three-dimension packaging structure as claimed in claim 1, it is characterized in that, liquid flows described microchannel (4) in, one or more in the cooling fluid of described liquid employing water, ethylene glycol, alcohol, glycerine.
6. enhance heat three-dimension packaging structure as claimed in claim 1, it is characterized in that, described heating panel (5) adopts fin type heat-dissipating metal sheet, material adopt in aluminium, copper, iron, silver, gold, magnesium, nickel, cobalt, titanium, manganese, lead and alloy material thereof one or more.
7. enhance heat three-dimension packaging structure as claimed in claim 1, is characterized in that, described external radiating device adopt in radiated rib, fan, cooling heat pipe and water cooling plant one or more.
8. enhance heat three-dimension packaging structure as claimed in claim 1, is characterized in that, described interconnection circuit (3) adopts the width of wiring to be 0.2 ~ 10mm, and the spacing of wiring is not less than 0.1mm.
9. a method for packing for enhance heat three-dimension packaging structure, is characterized in that, described method for packing comprises the following steps:
1) according to the needs of built-in and surperficial heater members, the position of design interconnection circuit, passive device and active device;
2) according to size and the power of heater members, the shape of microchannel, size and distribution is designed;
3) position of the built-in Micropump of the bottom design of substrate or external water pump;
4) on the substrate of every one deck, make the through hole of interconnection circuit, the groove of the cavity of device and microchannel and via hole;
5) on the substrate of every one deck, type metal good conductor, as the via fill of planar circuit and vertical direction, forms three-dimensional interconnection circuit;
6) fixing passive device and active device, the heater members of coated with thermally conductive insulating cement is connected with interconnection circuit, fixes and is connected water pump;
7) in the via hole of microchannel and the cavity of device, sacrificial layer material is filled, by accurate for multilager base plate lamination contraposition;
8) corresponding layer multilayer packaging substrate technology is adopted to process the integrated substrate of integrated heater members, microchannel, interconnection circuit;
9) heating panel is prepared in the bottom of substrate, and connects external radiating device, is diffused in external environment by the heat that the microfluid in packaging body and interconnection circuit are derived again.
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| CN201310481621.1A CN103489838B (en) | 2013-10-15 | 2013-10-15 | A kind of enhance heat three-dimension packaging structure and method for packing thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819165A (en) * | 2004-11-24 | 2006-08-16 | 朗迅科技公司 | Techniques for microchannel cooling |
| CN102148207A (en) * | 2009-11-06 | 2011-08-10 | 英特尔公司 | Direct liquid-contact micro-channel heat transfer devices, methods of temperature control for semiconductive devices, and processes of forming same |
| CN102769002A (en) * | 2011-04-30 | 2012-11-07 | 中国科学院微电子研究所 | Semiconductor device, formation method thereof and package structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11862529B2 (en) | 2020-09-30 | 2024-01-02 | Huawei Technologies Co., Ltd. | Chip and manufacturing method thereof, and electronic device |
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| CN103489838A (en) | 2014-01-01 |
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