CN100581333C - Cooling substrate of micro heat pipe - Google Patents

Cooling substrate of micro heat pipe Download PDF

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CN100581333C
CN100581333C CN 200610123676 CN200610123676A CN100581333C CN 100581333 C CN100581333 C CN 100581333C CN 200610123676 CN200610123676 CN 200610123676 CN 200610123676 A CN200610123676 A CN 200610123676A CN 100581333 C CN100581333 C CN 100581333C
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substrate
layer
heat dissipation
micro
micro heat
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CN 200610123676
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CN101175389A (en )
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钢 王
范冰丰
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中山大学
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/146Mixed devices
    • H01L2924/1461MEMS

Abstract

The present invention relates to an electronic component radiating substrate, in particular to a micro heat pipe radiating substrate. The micro heat pipe radiating substrate is formed by a plurality of layers of flat plate radiating layer. A micro heat pipe structure is manufactured in an upper radiating layer and a lower radiating layer to be provided with a hot end and a cold end in vertical direction. A temperature control ceramic layer at the bottom is used for controlling the temperature of the cold end, so the whole substrate is provide with radiating and temperature control functions. Compared with the traditional metal (or ceramic) substrate, the substrate adopts the design of the micro heat pipe structure and the cold end temperature control. So the present invention not only is characterized by strong heat transport capacity, good radiating and soaking, but also is capable of controlling the temperature of the substrate. The novel substrate is used in the electron field of semiconductor light emitting diode, semiconductor laser device, semiconductor component, integrated circuit and CPU and so on and is of advantages.

Description

一种微热管散热基板 A micro heat pipe heat dissipating substrate

技术领域 FIELD

本发明涉及电子元件散热基板,特别是涉及一种微热管散热基板。 The present invention relates to an electronic device heat dissipation substrate, particularly to a micro heat pipe heat-dissipating substrate.

背景技术 Background technique

电子及相关产业的发展有两大趋势, 一是追求小型化和集成化, 二是追求高频率和高运算速度,导致单位容积电子元器件的发热量大增。 Electronics and related industries, there are two trends, one is the pursuit of miniaturization and integration, the second is the pursuit of high frequency and high speed of operation, resulting in heat per unit volume increase of electronic components. 事实上,电子设备的散热问题已成为制约微电子工业发展的瓶颈。 In fact, the problem of heat dissipation of electronic devices has become a bottleneck restricting the development of the microelectronics industry. 考察现代电子设备的冷却问题, 一般分为3个层次,第l层次:热量从芯片传递到基板,基板材料通常为塑料、金属和陶瓷;第2层次: 热量从基板传递到冷却板;第3层次:把热量传给大气。 Investigation cooling problems of modern electronic devices, is generally divided into three levels, a first level l: heat transfer from the chip to the substrate, the substrate material is generally plastic, metal and ceramic; second layer: heat is transferred from the substrate to the cooling plate; 3 levels: the heat to the atmosphere. 传统上, 第2和第3层次的散热依靠空气的自然对流或强制对流方式实现。 Traditionally, the second and the third layer relies on natural convection cooling or forced air convection manner. 散热情况的好坏将直接影响到电子设备工作的稳定性,芯片工作温度的增高会带来半导体内的电子迁移,从而引起芯片失效甚至烧毁。 The quality of heat dissipation of the electronic device will directly affect the stability of the work, the working temperature of the chip will bring increased electron mobility in the semiconductor, thus causing chip failure even burned. 有资料表明,电子设备的工作温度每升高8度,失效率增加l倍。 Data show that the operating temperature of electronic equipment increased by 8 degrees, l-fold increase in the failure rate. 当芯片发热量在3〜4W以上时, 一般基板材料的散热性能很难应付。 When the chip calorific 3~4W above, heat dissipation of the substrate material is generally difficult to meet. 因此, 如何提高基板的散热性能,使得电路在正常温度下工作已成为一个亟待解决的问题。 Therefore, how to improve the heat dissipation properties of the substrate, so that the circuit has become a serious problem at normal temperatures. 除了最高温度限制外,电子设备对均温性也有更高的要求。 In addition to limiting the maximum temperature, the average temperature of the electronic device is also have higher requirements. 集成电路表面温度分布不均匀也将影响芯片的工作性能,传统的散热方式采用铝制、铜制散热片,或者采用风扇散热。 The integrated circuit surface of uneven temperature distribution will also affect the performance of the chip, the conventional cooling method using aluminum, copper heat sinks, cooling fans, or use. 这已经不能够满足电子器件稳定工作的需要,尤其是内部散热空间较小的电子设备,已无法采用传统的散热方式,必须采用新的技术用于电子设备中散热和温度分配。 This need has not been satisfied stability of electronic devices, particularly small interior space of the electronic cooling device, is not traditional cooling methods, new techniques must be used for electronic devices and cooling temperature distribution. 和传统散热设备相比,采用相变制冷的热管无需消耗动力"空间尺寸小"冷却能力高,均热性能好,单位面积的传热量高。 And compared with the conventional cooling device using the phase change heat pipe cooling without consuming power "Space size small" high cooling capacity, are good thermal performance, high heat transfer per unit area. 近几年来,微型小型热管技术用于冷却电子元器件得到了很大的发展,成为热管应用的一个重要领域。 In recent years, small-scale micro heat pipe technology for cooling electronic components has been a great development and become an important field of application of heat pipe.

在目前所有已知的电子冷却方式中,微热管已获得证实是传热性能最佳且最具潜力的冷却方式。 In all currently known electronic cooling, the micro heat pipe has been proven to be the best and most promising way of cooling the heat transfer performance. 微热管技术广泛的应用在航空器热控制、高功率电子元件制冷、核反应堆和化学工程应用以及MEMS器件应用。 Micro heat pipe technology is widely used in aircraft thermal control, cooling of high power electronic components, nuclear and chemical engineering applications, and MEMS devices. 热管技术是一种无需外部驱动,靠自身吸热作为动力进行散热 Heat pipe technology is a need for an external drive, powered by its own heat sink for cooling

的技术,已在大尺度散热方面有着广泛成熟的应用,随着MEMS工艺及微细加工技术的成熟,微热管(MHP)冷却技术成为最有吸引力的集成电路和电子芯片散热技术之一,同时它也广泛的用在航空器热控制、高功率电子元件制冷、核反应堆和化学工程等应用上。 Technique, has been widely used in large-scale mature heat, MEMS technology matures and microfabrication technology, micro heat pipe (MHP) cooling technology has become one of the most attractive integrated circuit chip cooling and electronics technology, while it is also widely used in aircraft thermal control, cooling of high power electronic components, chemical engineering applications and nuclear reactors. 通过对热管性能的分析与试验表明,相对于其他冷却技术,微热管技术有着高效传热以及消除热结的显著特点。 By analyzing the performance of the heat pipe test showed that, compared with other cooling techniques, micro heat pipe technology has a high heat transfer characteristics and the elimination of significant hot junction. 在Chariott Gillot, Seok Hwan Moon, RaviS.Prasher等人的研究中也建立了各种以实验数据为前提的热管性能分析模型。 In the study Chariott Gillot, Seok Hwan Moon, RaviS.Prasher et al also established a variety of experimental data as a precondition heat pipe performance analysis model. 而MEMS工艺的发展使得基于硅的微热管H益受到关注。 MEMS technology enables the development of attention based on the tube H beneficial fever silicon. 由于与硅基集成电路良好的匹配性,硅微热管受到了极大的关注。 Since the silicon integrated circuit good matching, silicon micro heat pipes has been a great concern. 但是,基于硅的微热管采用半导体工艺,不易简单加工,同时成本高。 However, silicon-based micro heat pipes using a semiconductor process, easy simple processing, while the high cost. 更为不利的是,硅材料本身很脆,制成硅基微热管很薄, 不利于大规模的加工应用,这样就限制了硅基微热管的使用范围。 More disadvantageously, the material itself is very brittle silicon, silicon micro heat pipe is made thin, is not conducive to large-scale processing applications, thus limiting the use of silicon-based micro heat pipes. 相对硅材料而言,某些陶瓷材料,如A1N陶瓷,具有如下特点: 热导率高,热膨胀系数与硅接近,各种电性能优良。 For material to silicon, certain ceramic materials such as A1N ceramics, having the following characteristics: high thermal conductivity, a thermal expansion coefficient close to silicon, a variety of excellent electrical properties. 因此,陶瓷材料是一种很好的基板材料。 Thus, the ceramic material is a good substrate material. 在基板材料方面,过去而言是直接运用铜箔 In the substrate material, it is directly applied in the past in terms of a copper foil

印刷电路板(Printed Circuit Board, PCB)来散热,也就是最常见的FR4印刷电路基板,然而随着电子元件的发热愈来愈高,FR4印刷电路基板已逐渐难以消受,理由是其热传导率不够(仅0.36W/m.10。 PCB (Printed Circuit Board, PCB) to dissipate heat, which is the most common FR4 printed circuit board, but with the heat generating electronic component is higher and higher, an FR4 printed circuit board have been gradually to endure, thermal conductivity is not enough grounds (0.36W / m.10 only.

为了改善电路板层面的散热,因此提出了所谓的金属核心的印刷电路板(Metal Core PCB, MCPCB),即是将原有的印刷电路板附贴在另外一种热传导效果更好的金属上(如:铝、铜),以此来强化散热效果, 而这片金属位于印刷电路板内,所以才称为(Metal Core), MCPCB 的热传导效率就高于传统FR4 PCB,达lW/m. K〜2. 2W/m. K。 To improve heat dissipation of the circuit board level, and therefore proposed a so-called metal core printed circuit board (Metal Core PCB, MCPCB), that is, the original printed circuit board affixed to the additional better effect a thermally conductive metal ( such as: aluminum, copper), in order to strengthen the cooling effect, which is located in the sheet metal of the printed circuit board, so it is called (metal Core), on the heat transfer efficiency than conventional MCPCB FR4 PCB, of lW / m K. ~2. 2W / m. K. 不过,MCPCB 也有些限制,在电路系统运作时不能超过14(TC,这个主要是来自介电层(Dielectric Layer,也称Insulated Layer,绝缘层)的特性限制,此外在制造过程中也不得超过25(TC〜30(TC。而陶瓷基板(Ceramic Substrate),或者是所谓的直接铜接合基板(Direct Copper Bonded Substrate,简称:DBC),或是金属复合材料基板u 无论是陶瓷基板或直接铜接合基板都有24〜170W/mK的高传导率, 其中直接铜接合基板更允许制程温度、运作温度达80(TC以上,因此是陶瓷基板一种很有优势的基板技术。 However, MCPCB also some limitations, when the circuit operation of the system should not exceed 14 (TC, this is from the dielectric layer (Dielectric Layer, also known as Insulated Layer, characteristics of the insulating layer) restrictions, in addition to the manufacturing process shall not exceed 25 (TC~30 (TC and the ceramic substrate (ceramic substrate), or a so-called direct copper bonded substrate (direct copper bonded substrate, abbreviation:. DBC), or whether u a metal composite material substrate is a ceramic substrate or a direct copper bonded substrate We have 24~170W / mK high conductivity, wherein the substrate further allows the direct copper bonding process temperature, the operating temperature of 80 (above TC, and therefore is a useful advantage of the ceramic substrate board technology.

另外,对于大多数半导体电子元件而言,它们都是温度敏感型器件,外界的温度变化会影响器件的性能。 Furthermore, for most of semiconductor electronic components, the components which are temperature sensitive, the outside temperature changes can affect performance of the device. 例如LED,外界环境温度改变导致的LED器件结温的变化,将影响LED的光输出量、光色以及器件的可靠性。 LED e.g., ambient temperature changes LED junction temperature variations caused, will affect the reliability of the LED light output, the light color and the device. 因此,具有控温功能的基板将大大提高器件的性能。 Thus, the substrate having a temperature control function will greatly enhance the performance of the device. 传统的控温技术一般采用温度探测和反馈电路控制方面,复杂,不利于集成和小型化,同时增加了额外成本,设计复杂度也增加了。 Traditional control techniques typically use temperature sensing and feedback control circuitry, complex and not conducive to miniaturization and integration, while adding additional cost, design complexity is also increased. 发明内容 SUMMARY

本发明的目的是针对现有的电子元件散热基板存在的问题,提供了一种散热性能好、均热且可具有控温功能的散热基板。 Object of the present invention is directed to an electronic component in the prior heat dissipating substrate problem, a good heat dissipation property, and may have a soaking temperature control function of the heat-dissipating substrate.

为了实现良好的散热功能,本发明采用微热管技术,在顶部陶瓷层下方设置具有微热管结构阵列的上部散热层。 To achieve good heat dissipation, the present invention employs technology micro heat pipes, the heat dissipation layer is provided having an upper structure array of micro heat pipe below the top ceramic layer.

为了进一步提高散热效果,本发明在上部散热层下方设置下部散热层,下部散热层上也设有微热管结构阵列,上下部散热层之间通过绝热陶瓷层分隔开来,上下部散热层之间还设有内部连通管道,连通形成回路。 In order to further improve the heat dissipation effect of the present invention is disposed below the upper layer, a lower heat dissipation layer, the lower layer is also provided with the heat dissipation structure array micro heat pipes, heat-insulating ceramic layer by spaced apart upper and lower portions between the heat dissipation layer, the upper and lower portions of the heat dissipation layer There is also a communication between the inner conduit in fluid communication to form a loop. 这样一来,上下部散热层形成冷热两端。 Thus, the upper and lower heat dissipation layer is formed of hot and cold ends.

为了实现控温功能,本发明在下部散热层下方设置控温陶瓷层, 控温陶瓷层内嵌有电阻丝。 To achieve temperature control function, according to the present invention, the ceramic layer is disposed below the lower temperature heat sink layer, temperature resistance wire embedded in the ceramic layer. 通过控制下部散热层的温度来控制上部散热层的温度。 To control the temperature of the upper heat dissipation layer by controlling the temperature of the lower heat dissipation layer. 采用的电阻丝是具有很高电阻线性的金属材料,能够通过控制金属材料的电阻而达到控制电阻温度的目的,应用于微热管散热基板,达到控温的目的。 Resistance wire is used in a linear metallic material having a high resistance, it is possible to control the temperature of the object by controlling the resistance of the resistance of a metal material, the substrate is applied to the micro heat pipe cooling, temperature control purposes.

上下部散热层内抽成真空,内部封装有液体,如甲醇、乙醇、水 The upper and lower heat dissipation layer portion is evacuated, the package interior with a liquid, such as methanol, ethanol, water,

或其他冷却剂(如电子冷却剂FC-72)。 Or other coolant (e.g., electronic cooling agent FC-72). 上下部散热层所用的材料优选为陶瓷片或金属片(如铝板、铜板或不锈钢板等)。 Materials used for the upper and lower heat dissipation layer is preferably a ceramic or metal sheet (e.g. aluminum, copper or stainless steel plate, etc.). 微热管的横截面可为三角形、矩形、星形或其他形状。 Micro heat pipe cross-section may be triangular, rectangular, star or other shapes. 绝热陶瓷层可为云母片或其它导热系数不高的陶瓷材料。 The ceramic insulating layer may be a mica sheet or other high thermal conductivity of the ceramic material is not. 顶部陶瓷层采用电镀工艺或丝网印刷制作电极,机械加工或激光加工的方法制作陶瓷内部微热管阵列和连通管道,控温陶瓷层通过陶瓷和内嵌的高线性电阻丝烧结而成,然后各个部分采取焊接或陶瓷烧结而成。 Ceramic top layer using a plating process or screen printing to prepare an electrode, machining or laser processing method of the micro heat produced inside the communication duct, and a ceramic tube array, a high temperature sintering ceramic layers linear resistance wire made of ceramic and embedded, and each take part welded or sintered ceramics.

本发明的5层结构不是必备的,例如只包括顶部陶瓷层和上部散热层的结构是落入本发明保护范围的;不采用底部控温陶瓷片,通过 5-layer structure of the present invention is not necessary, for example, includes only a top ceramic layer and an upper layer of the heat dissipation structure fall within the scope of the present invention; bottom temperature without using a ceramic sheet, by

设计上下两层的微热管阵列结构而使得基板内部具有控温功能也属 Design of two layers of micro heat pipes inside the substrate such that the array structure having a temperature control function also is

于本发明的保护范围;对于多层微热管结构,也属于本发明的保护范围。 Within the scope of the present invention; micro heat pipe multilayer structure, also belong to the scope of the present invention.

与现有技术相比,本发明具有如下有益效果:为了解决传统基板中散热效率不佳、不可控温以及实用性不强的缺点,本发明结合微热管技术、陶瓷基板技术和新型控温技术,提供了微热管散热基板结构。 Compared with the prior art, the present invention has the following advantages: In order to solve the conventional substrate poor in heat dissipation efficiency, temperature control is not practical and is not strong disadvantage, the present invention incorporates micro heat pipe technology, the ceramic substrate technology and new control techniques , a micro heat dissipation substrate structure. 本发明的微热管散热基板具有5层结构,散热性能好、均热且可控制温度,无需泵作为动力源,工作时无噪声,也无需维护。 Micro heat dissipation substrate according to the present invention has a five-layer structure, thermal performance, and can control the temperature of the soaking, no pump is used as a power source, no noise at work, and without maintenance. 工作冷却介质为液体,运行安全可靠。 Operation of the cooling medium is liquid, safe and reliable operation. 采用陶瓷片,坚固耐用,散热效率高且温度可控。 Ceramic sheet, durable, high thermal efficiency and temperature controllability. 可以用在LCD显示以及航空器热控制、高功率电子元件制冷、 核反应堆、化学工程应用以及MEMS器件应用上。 LCD display, and may be used in aircraft thermal control, cooling of high power electronic components, nuclear reactors, chemical engineering applications and MEMS devices.

附图说明 BRIEF DESCRIPTION

图1为方形微热管散热基板的结构示意图和各层分解图; 图2为圆形微热管散热基板的结构示意图和各层分解图; 图3为上下部散热层的放大图;图4为微热管散热基板工作原理示意图; 图5为微热管散热基板的制备流程图; 图6为微热管三种形状的横截面示意图; Figure 1 is a schematic structural diagram of layers and an exploded view of a prismatic micro heat dissipation substrate; FIG. 2 is a schematic structural diagram of an exploded view of the layers and the circular micro heat dissipation substrate; FIG. 3 is an enlarged view of the upper and lower heat dissipation layer; FIG. 4 is a micro schematic diagram of the substrate working heat pipe cooling; FIG. 5 is a flow chart of a micro heat pipe heat dissipating substrate; micro heat pipe 6 is a schematic cross section of the three shapes;

图7为微热管散热基板作为大功率电子元件散热基板的示意图; 图8为微热管散热基板作为多芯片电子元件散热基板的示意图。 7 is a schematic diagram of heat dissipation substrate as a power electronic device substrate a micro heat pipe; FIG. 8 is a schematic diagram of a multi-chip substrate as a heat dissipation substrate of the electronic component micro heat pipes. 其中:l.微热管散热基板;2.顶部陶瓷层;3.上部散热层;4.绝热 Where: l substrate micro heat pipe cooling; 2 a top ceramic layer; upper heat dissipation layer 3; 4 insulated...

陶瓷层;5.下部散热层;6.控温陶瓷层;7.微热管;8.连通管道;9. Ceramic layer;. A lower heat dissipation layer 5; 6 temperature ceramic layer;. Micro heat pipe 7; 8 communicating pipe; 9.

电阻丝;10.电极;ll.芯片;12.金丝。 Resistance wire; electrode 10;.. LL chip; 12 gold.

具体实施方式 detailed description

图1中,左图是整个微热管散热基板1的示意图,右图是微热管 In FIG. 1, the left heat dissipating substrate 1 is a schematic view of the entire micro heat pipes, heat pipe micro right

散热基板1的各层结构图。 The layers were heat-dissipating substrate 1 of the structure of FIG. 该微热管散热基板1由5层构成,顶部陶瓷层2为导热率高的陶瓷片,上面可以做成电路或者LED封装所需的杯碗形状。 The micro heat pipe heat-dissipating substrate 1 is made of 5 layers, the ceramic top layer 2 having high thermal conductivity ceramic sheet, circuit, or above the LED packages can be made Beiwan desired shape. 第2层为具有微热管结构阵列的陶瓷片(或金属片)散热层3,上面有矩形结构的微热管7结构阵列,其边缘通过连通管道8 与下部微热管形成通路。 The second layer having a micro heat pipe structure array ceramic sheets (or sheet metal) heat dissipation layer 3, above the micro-structure of the heat pipe 7 rectangular array of structures, which is the lower edge 8 micro heat pipe is formed by the communication passage conduit. 第3层为绝热陶瓷层4,目的在于将上下两层的微热管散热层形成热端和冷端,其内部连通管道8使得上下两层的微热管能够互通。 A ceramic insulating layer 3 is a layer 4, an object is to form the hot and cold ends of the upper and lower layers of the micro heat dissipation layer 8 such that the internal duct communicating the upper and lower layers of the micro heat pipes can communicate. 第4层为具有微热管阵列的陶瓷片(或金属片) 散热层5,其内部管道与第2层的微热管通过连通管道8互通。 The fourth layer is a ceramic sheet (or sheet metal) having an array of micro heat pipe heat dissipation layer 5, the internal heat pipe micro second layer 2 through the communication pipe 8 communicate. 第5 层为控温陶瓷层6,该控温陶瓷层6由陶瓷和线性极好的电阻丝9烧结而成,通过外部电路调节电阻丝的电阻,便可精确控制该陶瓷层6 的温度。 The fifth layer is a temperature ceramic layer 6, the sintering temperature of the ceramic layer 6 made of ceramic and the linear resistance wire 9 made excellent, the resistance of the resistance wire is adjusted through an external circuit, can precisely control the temperature of the ceramic layer 6. 本发明通过电路控制底部陶瓷层6的温度来达到控制整个微热管散热基板1的温度的目的。 To achieve the purpose of the present invention controls the whole micro heat pipe temperature by cooling the substrate 1 is a bottom temperature of the ceramic circuit layer 6 is controlled. 微热管7内部抽成真空,并通入合比例的水或酒精等液体。 7 micro heat pipe evacuated inside, and the like into water or alcohol proportionality liquid.

微热管散热基板l也可以采用圆形基板,如图2所示。 Micro heat pipe cooling circular base substrate l may be used, as shown in FIG.

上下部散热层3,5的放大图见图3,结合图4,本发明的基本原理和工作过程如下:整个微热管散热基板1抽真空并注入部分液体后,由于表面张力的作用,液体存储于截面的尖角处。 Upper and lower heat dissipation layer 3 an enlarged view of Figure 3 and 5, in conjunction with FIG. 4, the basic principle and process of the present invention is as follows: After the whole micro heat pipe heat-dissipating substrate 1 and the injection part of the liquid evacuated, due to the surface tension, the liquid storage sharp corners in cross-section. 对于微热管散热基板顶部的一个平面受到局部加热时,如AA平面所示,蒸发过程迅速产生于上部微热管阵列内汽液界面处,从而把热量迅速传递到相邻的通道内。 For a top planar micro heat pipe heat dissipating substrate subjected to localized heating, as shown in the plane AA, rapid evaporation heat generated in the upper portion of the micro-array liquid-vapor interface within the tube, thereby rapidly transfer heat to an adjacent channel. 同时热量也由上部的微热管阵列陶瓷片3通过管道输送到下部的微热管阵列。 3 while the heat is also conveyed by the upper tube array of micro heat pipes to the ceramic sheet by the lower portion of an array of micro heat pipes. 由于加热只发生在小面积热源平面,下部的陶瓷片温度相对较低,因此在上部微热管陶瓷片3边缘和下部微热管陶瓷片5内为非加热区,汽液界面处(如B冷凝端所示)产生冷凝过程, 冷凝液在表面张力的作用下回流到加热区。 Since the heating only occurs in a small area heat source plane, the ceramic sheet lower the temperature is relatively low, so the non-heating zone in the upper portion of the micro heat pipe ceramic sheet 3 edge and the lower micro heat pipe ceramic sheet 5, vapor-liquid interface (e.g., B condenser end shown) condensation process, the condensate is returned to the heating zone under the influence of surface tension. 同时下部的微热管陶瓷片5受到底部控温陶瓷片6的控温作用,从而通过控制微热管冷端的温度来控制整个微热管散热基板1的温度。 While the lower portion of the micro heat pipe temperature by the action of the ceramic sheet 5 bottom temperature ceramic sheet 6, thereby controlling the temperature throughout the heat-dissipating substrate 1 is controlled by a micro heat pipe micro heat pipe cold end temperature.

微热管散热基板1的制备如图5所示:顶部陶瓷层1根据实际需 Preparation of micro heat pipe cooling of the substrate 1 as shown in Figure 5: a top ceramic layer according to the actual needs

要制作电极或杯碗;上下部微热管散热层3, 5在内部制作微热管阵列和连通管道8;绝热陶瓷层4在内部制作连通管道8;控温陶瓷层6 To make an electrode or Beiwan; unit vertical micro heat pipe heat dissipation layer 3, 5 micro heat produced inside the tube array and the communication pipe 8; ceramic heat insulating layer 4 made inside the communication duct 8; temperature ceramic layer 6

通过陶瓷和内嵌的高线性电阻丝9烧结而成;然后各个部分采取焊接 By high linearity and resistance wire embedded in a ceramic sintering 9; respective welding portions are then taken

或陶瓷烧结而成。 Or ceramic sintering. 微热管的传热能力与管道外形、尺寸以及液体的含量有关,因此选取合适的设计参数,对提高微热管散热基板的散热能力有帮助。 Micro heat pipe heat transfer capacity of the pipe contents shape, size, and the liquid, and therefore select the appropriate design parameters to help improve heat dissipation micro heat pipe cooling of the substrate. 另外,也可通过设计上下微热管的相关参数,使得微热管阵列自身有温度调节功能。 Further, the design parameters can also be down micro heat pipes, the heat pipes such that the micro array of self-regulation temperature. 微热管阵列截面可为图6所示的形状。 Micro heat pipe array may sectional shape as shown in FIG.

微热管散热基板可作为大功率电子元件(如LED、 LD、 CPU、 IC 等)的散热基板,如图7所示。 Micro heat pipe cooling power electronics components can be used as the substrate (e.g., LED, LD, CPU, IC, etc.) of the heat dissipating substrate, as shown in FIG. 在微热管散热基板上端制作互联电路, 可作电子元件的引线连接和互联通道。 In the upper end of heat pipe cooling micro interconnect circuit board production, may be connected to the leads of the electronic component and the interconnection. 工作时,大功率电子元件散发的热通过底部微热管散热基板,传到基板底部的散热连接元件上,从而抑制了电子元件的温升和过高温度。 In operation, the thermal power electronic components for distributing the heat pipe through the bottom of the micro heat-dissipating substrate, a heatsink connected to the base portions of the substrate element, thereby suppressing the temperature rise of the electronic components, and excessive temperature. 当外界温度改变时,基板下端的控温陶瓷片6始终工作在一定温度下,从而避免了由于外界温度变化而造成了电子元件温度变化,提高了电子元件的可靠性。 When the ambient temperature changes, lower temperature ceramic sheet substrate 6 is always working at a constant temperature, thereby avoiding due to outside temperature changes caused by the temperature change of electronic components, improved reliability of the electronic components.

微热管散热基板可作为多芯片电子元件封装的基板,如图8所示。 Micro heat pipe heat dissipation board substrate may be packaged as multi-chip electronic components, as shown in FIG. 多颗芯片高密度的封装在一块微热管散热基板上,微热管散热基板上端可制作互联电路和杯碗(对于LED,此杯碗可为反射杯碗)。 High-density multi-chip package in a micro heat pipes on the heat radiation substrate, micro heat pipe interconnecting the upper end of the heat radiation substrate can be fabricated and Beiwan circuits (for the LED, this may be a reflective Beiwan Beiwan). 由于该微热管散热基板的均热效果,可以实现很高密度的多芯片封装,这是传统基板技术不能达到的。 Since the soaking effect of the micro heat pipe cooling of the substrate, resulting in high-density multi-chip package, which is a conventional technology can not reach the substrate. 多芯片工作时,多芯片产生的热量通过微热管散热基板带到下端的其它冷却装置,多芯片工作时产生的冷热不均也可通过该微热管散热基板的均热性能得到改善。 When working multi-chip, the heat generated by the multi-chip micro heat pipe cooling apparatus cooling the substrate to the other lower end, a multi-chip generated when Lengrebujun work performance of heat soaking may be improved by the substrate of the micro heat pipe.

LED汽车灯头必须具备大功率、高效率与工作温度在-4(TC至125 'C的高可靠性,此外其光学、电学参数必须稳定且具有一致性,光强度衰减也不能超过20°C;其中最难克服的一个部分是散热的问题。 LED芯片只要遇到高温,发光效率就会衰减甚至损坏, 一般建议的工作是8(TC以下。本发明的微热管散热基板可用于LED车灯的散热。 LED automobile lamp must have a high power, high efficiency and high reliability at operating temperatures -4 (TC to 125 'C, in addition to its optical, electrical parameters must be stable and consistent, the light intensity attenuation should not exceed 20 ° C; wherein a portion of the most difficult to overcome is the problem of heat. As long as the high temperatures encountered LED chip, light emission efficiency is attenuated or even damage, the work is generally recommended 8 (TC hereinafter. micro heat dissipation substrate according to the present invention can be used for LED lights heat dissipation.

Claims (8)

  1. 1、一种微热管散热基板,其特征在于包括顶部陶瓷层(2)以及设置在顶部陶瓷层(2)下方的上部散热层(3),上部散热层(3)上设有微热管(7)结构阵列,所述上部散热层(3)下方还设有下部散热层(5),下部散热层(5)上也设有微热管(7)结构阵列;上下部散热层(3,5)之间设有陶瓷绝热层(4)和连通管道(8)。 A micro heat dissipation substrate, comprising a top ceramic layer (2) and is provided with micro heat pipe (7 on top of the ceramic layer (2) an upper heat dissipation layer beneath (3), an upper heat dissipation layer (3) ) array structure, (3) below the upper layer is further provided with a lower heat dissipation layer (5), the lower heat dissipation layer (5) also has a micro heat pipe (7) structure array; unit vertical heat dissipation layer (3,5) It is provided with a ceramic heat-insulating layer (4) and the communicating pipe (8) between.
  2. 2、 如权利要求1所述的微热管散热基板,其特征在于所述下部散热层(5)下方还设有控温陶瓷层(6),控温陶瓷层(6)内嵌有电阻丝(9)。 2, as claimed in claim 1 micro heat dissipation substrate, characterized in that said (5) provided below the lower heat sink temperature ceramic layer further layer (6), temperature ceramic layer (6) embedded resistance wires ( 9).
  3. 3、 如权利要求1所述的微热管散热基板,其特征在于所述上下部散热层(3, 5)为陶瓷片或金属片。 3, as claimed in claim 1 micro heat dissipation substrate, wherein said upper and lower heat dissipation layer portion (3, 5) is a ceramic sheet or a metal sheet.
  4. 4、 如权利要求1所述的微热管散热基板,其特征在于所述上下部散热层(3, 5)内抽成真空,内部封装有液体。 4, as claimed in claim 1 micro heat dissipation substrate, wherein said upper and lower heat dissipation layer portion (3, 5) is evacuated, the liquid inside the package.
  5. 5、 如权利要求4所述的微热管散热基板,其特征在于所述液体为甲醇、乙醇、水或其他冷却剂。 5, as claimed in claim 4, wherein the micro heat dissipation substrate, wherein the liquid is methanol, ethanol, water or other coolant.
  6. 6、 如权利要求1所述的微热管散热基板,其特征在于所述微热管(7)的横截面可为三角形、矩形、星形或其他形状。 6, as claimed in claim 1 micro heat dissipation substrate, characterized in that the cross section of the micro heat pipe (7) may be triangular, rectangular, star or other shapes.
  7. 7、 如权利要求1所述的微热管散热基板,其特征在于所述上下部散热层(3, 5)的微热管(7)通过连通管道(8)形成闭合回路。 7, as claimed in claim 1 micro heat dissipation substrate, wherein said upper and lower heat dissipation layer portion (3, 5) of the micro heat pipe (7) form a closed circuit through the communication pipe (8).
  8. 8、 如权利要求1所述的微热管散热基板,其特征在于所述的连通管道(8)为孔洞、三角洞或其它连通管道。 8, as claimed in claim 1 micro heat dissipation substrate, characterized in that said communication duct (8) for the holes, triangular holes, or other communication channels.
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