CN101238593A - 用于制造半导体器件的方法和薄膜半导体器件 - Google Patents
用于制造半导体器件的方法和薄膜半导体器件 Download PDFInfo
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- CN101238593A CN101238593A CNA2006800287081A CN200680028708A CN101238593A CN 101238593 A CN101238593 A CN 101238593A CN A2006800287081 A CNA2006800287081 A CN A2006800287081A CN 200680028708 A CN200680028708 A CN 200680028708A CN 101238593 A CN101238593 A CN 101238593A
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- Y02P20/582—Recycling of unreacted starting or intermediate materials
Abstract
本发明涉及一种用于制造半导体器件的方法,其中在生长衬底(1)上构建包含半导体材料的层复合结构(6),将柔性的支承体层(2)施加到所述层复合结构(6)上,将柔性的层硬化为自支承的支承体层(2),以及将生长衬底(1)剥离。替代地,支承体层(2)可以具有基本层(2b)和粘附在层复合结构上的粘附层(2a)。
Description
本发明涉及一种用于制造半导体器件的方法和一种薄膜半导体器件。
本发明的任务是,提出一种简化的用于制造半导体器件的方法。此外,本发明的任务是,提出一种薄膜半导体器件,该器件容易处理并且机械稳定。
该任务通过根据权利要求1和2的方法以及根据权利要求25和26的薄膜半导体器件来解决。所述方法和薄膜半导体器件的有利的改进方案在从属权利要求中说明。
根据本发明的用于制造半导体器件的方法的第一变形方案包括以下步骤:
-在生长衬底上构建包含半导体材料的层复合结构,
-将柔性的支承体层施加到所述层复合结构上,
-将所述柔性的支承体层硬化为自支承的支承体层,
-将生长衬底剥离。
于是,在层复合结构的背离生长衬底的侧施加了柔性的支承体层,该支承体层在硬化之后作为自支承的、优选为刚性的支承体层附着在层复合结构上。
根据本发明的用于制造半导体器件的方法的第二变形方案包括以下步骤:
-在生长衬底上构建包含半导体材料的层复合结构,
-将自支承的支承体层施加到所述层复合结构上,其中支承体层具有基本层和朝着层复合结构的粘附层,该粘附层粘附在层复合结构上,
-将生长衬底剥离。
于是,在层复合结构的背离生长衬底的侧施加了支承体层。在完成的半导体器件中,该支承体层作为自支承的、优选为刚性的支承体层附着在层复合结构上。
有利的是,可以在层复合结构和支承体层之间设置特别的连接,譬如焊接连接,由此可以省去导致开销的方法步骤-接合。
根据第一变形方案,相对于柔性的支承体层,自支承的支承体层的优点是,其构造更坚固并且因此更易处理。
在第二变形方案中,粘附层由热熔粘合剂(Schmelzklebstoff)形成,而基本层由固态塑料形成。在此,需要对粘附层加热,以将该粘附层熔化,并且实现层复合结构的足够的润湿并在硬化之后实现足够的粘附。在室温时,粘附层优选为固态的。此外可能的是,粘附层无需附加的加热就粘附在层复合结构上。在这种情况中,粘附层例如可以包含硅树脂,而基本层包含聚酰亚胺。
在所述方法的第二变形方案的一种优选的实施形式中,基本层包含塑料材料。替代地,基本层可以包含玻璃。
优选的是,支承体层是薄片(Folie)。特别地,支承体层可以是以片状(in Bahnen)制造的塑料片。在根据本发明的支承体层的较小的厚度情况下也能实现足够的稳定性。因为由于较小的厚度,支承体层具有弹性,由此减小了形成裂缝的危险。在此,较小的厚度理解为优选100μm,特别优选为小于100μm。
特别优选的是,支承体层是透明的。这样的优点是,支承体层可以同时用作耦合输出层。
借助根据本发明的方法,优选地制造薄膜半导体器件,特别是发射辐射的薄膜半导体器件。
发射辐射的薄膜半导体器件的特征尤其是在于至少一个以下特征:
-在产生辐射的外延层序列的、朝着支承体元件的第一主面上优选地施加或者构造了反射层,该反射层将外延层序列中产生的电磁辐射的至少一部分反射回该外延层序列中;
-外延层序列具有20μm或者更小范围中的厚度,特别是10μm范围中的厚度;以及
-外延层序列包含至少一个带有至少一个面的半导体层,其中所述面具有混匀结构,该结构在理想情况下导致光在外延的外延层序列中的近似各态历经的分布,即其具有尽可能各态历经的随机散射特性。
发射辐射的薄膜半导体器件的基本原理例如在1993年10月18日I.Schnitzer等人所著的Appl.Phys.Lett.63(16)的第2174-2176页中进行了描述,其公开内容通过引用结合于此。
这种发射辐射的薄膜半导体器件良好地近似于朗伯(Lambert’scher)表面发射器。
在本发明中,层复合结构相应地具有有源层序列,用于产生电磁辐射。该有源层序列优选外延地生长在生长衬底上。
为了制造多个薄膜半导体器件,层复合结构被结构化为单个的层堆叠。这些层堆叠例如可以通过锯割来分离。
支承体层可以预先结构化地施加到层复合结构上,使得层复合结构可以沿着该结构被分离为层堆叠。
在根据本发明的方法的第一变形方案的一种优选的实施形式中使用了具有塑料材料的支承体层。这种支承体层特别优选地包含环氧树脂,PET(聚对苯二甲酸乙二酯)或者聚合物,特别是聚酰亚胺,例如Kapton,或者这些材料的组合。Kapton是由DuPont公司提供的聚酰亚胺产品的商标名称。
在传统的方法中,在将层复合结构接合到支承体本体上时,典型地达到400℃范围的温度。在随后冷却到室温时,当生长衬底和支承体本体的热膨胀系数彼此差别较大时,会出现张紧或者扭曲。此外,由此会在支承体本体中出现裂缝,使得形成的器件不再具有足够的稳定性。
因为根据本发明的方法以较低的温度实现,所以出现较小的热张紧,由此有利地减小了形成裂缝的危险。
例如,包含填充有银的环氧树脂的支承体层在80℃至90℃时熔化,并且在150℃的温度时硬化,其中10%的偏差是可允许的。
根据本发明的支承体层的另一种可能性是用玻璃颗粒填充的粘合剂膜。该粘合剂膜可以由混合材料形成,该混合材料特别是包含环氧树脂和丙烯酸盐。带有银涂层的玻璃颗粒被嵌入到该混合材料中,其中粘合剂膜有利地借助玻璃颗粒而导电。粘合剂膜可以在120℃时熔化,并且在160℃时被硬化了30分钟长。
为了使得在根据本发明的方法所制造的半导体器件中能够导出工作时产生的损耗热,支承体层优选地导热地构建。由此,可以避免不希望的影响,例如半导体器件所发射的辐射的波长偏移或者强度降低。
在根据本发明的方法的一种优选的实施形式中,支承体层用电绝缘的材料构建。在支承体层上可以施加至少一个电印制导线,以便以后将由施加在共同的支承体层上的层堆叠构成的装置或者被分割的器件与电极相连。
替代地,支承体层可以用导电的材料构建。例如,支承体层含有金属,特别是Al、Ag、Ti、Cu或者合金,特别是黄铜。
为了半导体器件的电接触,层复合结构在朝着支承体层的侧设置有接触面,特别是包含有金属的接触金属化物。
在根据本发明的方法的一种优选的实施形式中,针对接触金属化物选择了一种材料,该材料将在以后的工作中由有源的层堆叠产生的辐射至少部分地反射。特别是当支承体层对于所产生的辐射不可穿透,并且辐射在半导体器件的、与支承体层对置的侧上耦合输出时,这一点是有利的。
生长衬底优选地通过激光剥离方法去除,例如由WO 98/14986所公开的那样,其内容在此通过引用结合于此。生长衬底也可以通过其它方法,例如等离子体刻蚀或者干刻蚀来剥离或者以机械方式去除。
在剥离生长衬底之后,在层复合结构的与支承体层背离的侧上优选地施加第二接触面,特别是接触金属化物,该第二接触面设置用于另外地电接触以后的薄膜半导体器件。
此外,可以在层堆叠的背离支承体层的侧施加柔性的覆盖层,该覆盖层可以被硬化。替代地,柔性的覆盖层可以保持未完全硬化的状态。
另一种可能性在于,施加具有基本层和朝着层复合结构的粘附层的覆盖层,其中粘附层粘附在层复合结构上。
特别地,覆盖层可以是薄片。
优选的是,覆盖层对于有源层所产生的辐射是可穿透的。在一种有利的实施形式中,覆盖层包含转换材料,用于将以后的有源层堆叠所产生的辐射部分地进行波长转换。
特别优选的是,覆盖层具有与支承体层对应的特性。然而,覆盖层也可以包含与支承体层不同的材料。
根据一种优选的变形方案,覆盖层由玻璃构成。此外,覆盖层在朝着层复合结构的侧可以具有至少一个印制导线,用于从上侧接触薄膜半导体器件。其中该印制导线特别是包含辐射透射的材料,例如ITO(铟锡氧化物)。
有利的是,可以两侧地设置支承体层和覆盖层来替代壳体。
一种根据第一变形方案的根据本发明的薄膜半导体器件,该半导体器件优选地可以相应于根据本发明的方法的第一变形方案来制造,具有以下的组成部分:
-层堆叠,
-自支承的、优选为刚性的支承体层,该支承体层设置在层堆叠上,其中支承体层被硬化。
一种根据第二变形方案的根据本发明的薄膜半导体器件,该半导体器件优选地可以相应于根据本发明的方法的第二变形方案来制造,具有以下的组成部分:
-层堆叠,
-自支承的支承体层,该支承体层设置在层堆叠上,其中支承体层具有基本层和朝着层堆叠的粘附层,该粘附层粘附在层堆叠上。
特别地,支承体层具有已经结合所述方法的第一和第二变形方案所提及的特性。
因为在具有根据本发明的支承体层的薄膜半导体器件中,存在足够的机械稳定性,所以无需附加的支承体。由此,半导体器件能够以有利地小的结构高度(例如120μm)来实施。
薄膜半导体器件被设计用于产生电磁辐射,并且为此具有有源的层堆叠。该有源的层堆叠是层堆叠的一部分。例如,有源的层堆叠可以具有传统的pn结、双异质结构、单量子阱结构或者多量子阱结构。
此外,在一种优选的实施形式中,薄膜半导体器件具有氮化物化合物半导体,这意味着,有源的层堆叠或者其中至少一层包括氮化物-III/V-化合物半导体材料,优选为AlnGamIn1-n-mN,其中0≤n≤1,0≤m≤1并且n+m≤1。在此,该材料不必一定具有根据上式的数学上精确的组成。更确切地说,该材料可以具有一种或者多种掺杂剂以及附加的组成部分,它们基本上不改变AlnGamIn1-n-mN材料的典型的物理特性。然而,出于简单的原因,上式仅仅包括晶格的主要组成部分(Al,Ga,In,N),即使它们可以部分地通过少量其它的物质、例如P来替代。
具有氮化物化合物半导体的薄膜半导体器件主要发射具有在可见光谱中的短波范围中的波长的辐射。
波长可以借助在辐射方向中设置在层堆叠之后的转换元件至少部分地转化为较长波长。
特别地,可以将转换材料集成到薄膜半导体器件中,优选集成在覆盖层中。
根据本发明,支承体层可以包含塑料材料。对于支承体层优选的材料例如是环氧树脂、PET、聚合物,特别是聚酰亚胺,例如Kapton,或者这些材料的组合。
此外,支承体层或者覆盖层可以具有任何结合根据本发明的方法所提及的特性。相应的也适用于薄膜半导体器件。
此外,在一种优选的实施形式中,支承体层包含碳纤维。这些碳纤维例如可以被嵌入聚合物膜中,并且具有比聚合物膜更高的导热性,使得由此有利地总体上得到粘附的并且导热的支承体层。此外,支承体层可以具有玻璃网,特别是硅酸盐。
在另一种优选的实施形式中,支承体层对于由有源的层堆叠所产生的辐射是可穿透的。这样的优点是,辐射可以直接耦合输出,并且减少了由于在有源的层堆叠中对被反射的辐射的吸收而会出现的辐射损耗。
可能的是,将覆盖层施加在背离支承体层的侧,该覆盖层可以保持未完全硬化的状态,而优选的是自支承地、特别是刚性地构建,并且具有对应于支承体层的特性。
在一种有利的实施形式中,覆盖层包括转换材料,用于将有源的层堆叠所产生的辐射部分地进行波长转换。此外,覆盖层可以具有光学结构。光学结构可以设置到覆盖层的朝着层堆叠或者背离层堆叠的侧上。有利的是,可以借助光学结构来影响在薄膜半导体器件中产生的辐射的辐射特性。例如,光学结构可以构建为透镜状、棱镜状或者棱锥状。
因为层堆叠典型地具有在20μm或者10μm范围中的高度,所以支承体层和覆盖层(其厚度特别优选地小于或者等于100μm)可以包围层堆叠。这样的优点是,无需另外的壳体。
根据一种优选的实施形式,在支承体层和覆盖层之间设置了填充层。填充层例如可以包含塑料材料。
此外,薄膜半导体器件可以安装到壳体中。
在一种特别的实施形式中,支承体层和覆盖层对于有源的层堆叠所产生的辐射都是可穿透的,这导致双侧发射的薄膜半导体器件。
所述方法或者薄膜半导体器件的其它的特征和有利的扩展方案由以下结合图1a至1f、2和3进一步阐述的实施例中得出。
其中:
图1a至1f借助六个制造步骤示意性示出了根据本发明的方法的第一实施例,
图2是根据本发明的薄膜半导体器件的第一实施例的示意性透视图,
图3是根据本发明的薄膜半导体器件的第二实施例的示意性透视图,
图4是根据第一实施例的根据本发明的薄膜半导体器件的示意性剖面图,其中该薄膜半导体器件设置在壳体中,
图5a至5d借助四个制造步骤示意性示出了根据本发明的方法的第二实施例。
在这些实施例中,相同的或者作用相同的组成部分分别设置有相同的参考标号。附图的所示的组成部分、特别是所示的层厚的大小基本上不能视为符合比例。更确切地说,它们可以为了更好的理解而被部分夸大地示出。
在图1a至1f中分别示出了根据本发明的方法的第一实施例的制造步骤。
在图1a中所示的第一制造步骤中,有源层序列4被施加到生长衬底1上。这例如可以通过在蓝宝石衬底或者SiC衬底上外延地生长多个不同的层来实现。其中这些层优选地包含根据上述定义的氮化物化合物半导体。这样制造的有源层序列4优选地适合于产生电磁辐射。其结构对应于上述可能性之一来构造。
在图1b中示出了第二制造步骤,其中在有源层序列4上施加接触金属化物5。有源层序列4和接触金属化物5一同形成了层复合结构6。接触金属化物5导电,并且此外在尤其是由层复合结构形成的器件的以后的工作中,反射由有源的层堆叠40发射的辐射。
接触金属化物5可以整面地施加在有源层序列4上。替代地,接触金属化物5可以例如通过掩模部分地施加在一些位置上,其中以后在这些位置上构建层堆叠。
优选的是,接触金属化物5包含金属材料,例如Ag、Al或Au,该材料例如被气相淀积。此外,可以在有源层序列4上设置带有集成的电接触部和不同的介电常数的层,这些层形成布拉格反射器。
在以后的器件中,接触金属化物5可以同时形成背面的电接触部。
在图1c中示出的第三制造步骤中,在层复合结构6上首先设置共同的柔性支承体层2,该支承体层2随后被硬化为刚性的、自支承的支承体层2。支承体层2的厚度优选在100μm的范围中。
例如,针对支承体层2使用了填充银的环氧树脂粘合剂膜,该环氧树脂粘合剂膜包含80%的银和20%的非挥发性的环氧树脂。填充银的环氧树脂粘合剂膜被施加到层复合结构6上,并且随后被加热到80℃至90℃。在此,粘合剂膜容易熔化,由此该粘合剂膜获得良好的初步粘附(Primaerhaftung)。随后,该膜在大约150℃的情况下硬化。这样形成的支承体层2导电,并且具有150至155℃的玻璃化转变温度。此外,支承体层2是耐热和耐化学腐蚀的。
对于支承体2,特别是可以使用任意其他的材料,优选使用一种塑料材料,所述材料具有这样的特性:这些特性对应于例如借助环氧树脂粘合剂膜表明的特性。
在另一种变形方案中,支承体层2包括被填充的粘合剂膜。该粘合剂膜由混合材料构成,该混合材料包含环氧树脂和丙烯酸盐。带有银涂层的玻璃颗粒被嵌入到该混合材料中,其中粘合剂膜有利地借助玻璃颗粒而导电。粘合剂膜可以在120℃时熔化,并且在160℃时被硬化了30分钟长。
在图1d中示出了第四制造步骤,其中生长衬底1被从层复合结构6剥离。剥离可以借助激光剥离方法来进行,如例如由WO 98/14986公开的那样,其内容通过引用结合于此。替代地,剥离可以通过刻蚀或者其它合适的提取方法来实现。
基本上,在激光剥离方法中,穿过生长衬底1用电磁辐射(优选为激光辐射)照射在生长衬底1和有源层序列4之间的边界面,使得在该边界面上通过吸收辐射而产生材料分解。由此,生长衬底1和有源层序列4可以基本上无损坏地彼此分离。由此,可以继续使用生长衬底1。
在图1e中示出的第五制造步骤中,由支承体层2上的层复合结构6形成彼此分离的层堆叠60,这些层堆叠具有有源的层堆叠40和各个导电的接触金属化物50。这例如通过湿化学刻蚀或者干刻蚀进行。
替代地,层复合结构6可以在结合图1b所描述的制造步骤中已经被分离为单个的层堆叠60。这同样可以通过刻蚀、例如通过等离子体刻蚀进行。
在图1f中示出了第六制造步骤,其中将第二接触金属化物3施加到层堆叠60上,第二接触金属化物3例如用于以后的半导体器件的上侧的接触。
层堆叠60可以与支承体层2一同沿着分割面7被分割,特别是锯开。由此形成单个的半导体器件8,这些半导体器件可以单个地安装到壳体中。
可以添加另外的制造步骤,其中在分割之前,在层堆叠60上在与支承体层2对置的侧施加柔性的覆盖层,该覆盖层随后可以被硬化为刚性的、自支承的覆盖层,或者替代地可以保持未完全硬化的状态。
要指出的是,根据本发明的方法并非固定为根据实施形式所说明的次序。
在图2中示出了层堆叠60,其优选地依照根据本发明的方法来制造。
层堆叠60包括接触金属化物50和有源的层堆叠40。层堆叠60的高度大约为10μm。在有源的层堆叠40上施加了第二接触金属化物3。层堆叠60设置在刚性的、自支承的支承体层2上,该支承体层具有大约100μm的厚度。
根据第一实施形式,半导体器件8单独地沿着分割面7分割。作为单个的半导体器件,它们例如可以安装在壳体中。因为支承体层2刚性、自支承并且足够稳定地构建,所以半导体器件8容易处理,而无需附加的辅助支承体用于进一步加工。
此外,支承体层2优选导电地构建,使得半导体器件8可以从背面通过支承体层2连接到第一电极上。通过第二接触金属化物3,半导体器件8可以从上侧连接到第二电极。此外,接触金属化物50导电,并且将有源的层堆叠40中产生的辐射反射。由此可以提高在辐射方向9中的辐射量。
根据第二实施形式,支承体层2未被分割。更确切地说,设置在支承体层2上的层堆叠60形成了矩阵。支承体层2例如可以是导电的。替代地,支承体层2可以是电绝缘的,并且具有分离地施加的印制导线。这些印制导线可以将层堆叠60以任意的、预先给定的方式彼此相连。
这种矩阵布置例如可以用于显示器或者显示器背光。
在图3中示出了根据本发明的半导体器件8,该器件具有设置在支承体层2上的层堆叠60,该层堆叠具有施加在其上的第二接触金属化物3。
在该实施例中,接触金属化物50导电,并且对于有源的层堆叠40产生的辐射是可穿透的。此外,支承体层2是电绝缘的,并且对于有源的层堆叠40产生的辐射是可穿透的。
在半导体器件8的与支承体层2对置的侧设置有覆盖层11。覆盖层11如支承体层2那样是电绝缘的,并且对于有源的层堆叠40产生的辐射是可穿透的。由此,薄膜半导体器件8不但在辐射方向9上发射,而且在辐射方向12上发射。覆盖层11以及支承体层2可以具有光学结构,如上面已经提及的那样。
优选的是,两个层2和11包含塑料材料。
支承体层2和覆盖层11具有印制导线10a、b,这些印制导线将薄膜半导体器件8和电压供给相连。支承体层2和覆盖层11可以在施加到层堆叠60上之前设置有印制导线10a、b。在支承体层2和覆盖层11之间可以设置填充层17。优选的是,填充层17包含电绝缘的材料,这样防止了在支承体层2和覆盖层11之间的短路。
所示的薄膜半导体器件8具有足够的机械稳定性,使得可以省去进一步安装到壳体中。由于层堆叠60的高度(大约10μm)比支承体层2和柔性的覆盖层11的厚度(大约100μm)小,层堆叠60在一定程度上可以被两个层2和11包围。
在图4中示出的薄膜半导体器件8设置在壳体12中。为了安装半导体器件8,支承体层2被熔化和硬化。在硬化之后,半导体器件8被固定在安装面16上。支承体层2有利地包含导电的材料,如结合图2已经描述的那样,使得借助支承体层2可以从背面电连接。安装面16优选地设置在引线框架的第一部分13a上,使得薄膜半导体器件8可以从背面借助引线框架13a电连接。在上侧,薄膜半导体器件8借助电导体14与第二引线框架13b电连接。薄膜半导体器件8被嵌入填料(Verguss)15中。
结合图5a至5d所描述的根据本发明的方法的第二实施例可以具有已经结合图1a和1b描述的方法步骤作为第一方法步骤。随后的步骤在图5a至5d中示出。这些步骤基本上类似于在图1c至1f中示出的第一实施例的步骤来实施。不同之处在于,在当前情况中支承体层2以两阶段的方式构建。支承体层2具有基本层2b和粘附层2a。
粘附层2a由粘合剂膜形成,该粘合剂膜例如包含粘性的硅树脂材料。粘附层2a设置在例如包含聚酰亚胺的基本层2b上。替代地,粘附层2a可以由热熔粘合剂形成,其中粘附层2a首先被熔化,并且在其粘附在层复合结构6上之前被硬化。
在本申请中所描述的半导体器件在其它意义中也可以称为“半导体芯片”。为了清楚的原因,在此选择了较中性的名称“半导体器件”,以避免与包含半导体材料的层复合结构、即譬如外延的半导体层堆叠混淆。名称“半导体器件”特别对应于德国专利申请102005037023.3和102005055293.5的名称“半导体芯片”,本申请要求了其优先权。
本发明并非通过借助实施例对本发明的描述而局限于此。更确切地说,本发明包括任意新的特征以及这些特征的任意组合,特别是包含权利要求中的特征的任意组合,即使这些特征或者组合本身没有明确地在权利要求中或者实施例中被明确说明。
Claims (47)
1.一种用于制造半导体器件(8)的方法,具有以下步骤:
-在生长衬底(1)上构建包含半导体材料的层复合结构(6),
-将柔性的支承体层(2)施加到所述层复合结构(6)上,
-将柔性的层硬化为自支承的支承体层(2),
-将生长衬底(1)剥离。
2.一种用于制造半导体器件(8)的方法,具有以下步骤:
-在生长衬底(1)上构建包含半导体材料的层复合结构(6),
-将自支承的支承体层(2)施加到所述层复合结构(6)上,其中支承体层(2)具有基本层(2b)和朝着层复合结构(6)的粘附层(2a),该粘附层粘附在层复合结构(6)上,
-将生长衬底(1)剥离。
3.根据权利要求2所述的方法,其中粘附层(2a)由热熔粘合剂形成。
4.根据权利要求2或3所述的方法,其中基本层(2b)由塑料材料形成。
5.根据上述权利要求中的任一项所述的方法,其中支承体层(2)是薄片。
6.根据上述权利要求中的任一项所述的方法,其中支承体层(2)是透明的。
7.根据上述权利要求中的任一项所述的方法,其中半导体器件(8)是薄膜半导体器件。
8.根据上述权利要求中的任一项所述的方法,其中层复合结构(6)具有有源的层序列(4),用于产生电磁辐射。
9.根据上述权利要求中的任一项所述的方法,其中层复合结构(6)结构化为单个的层堆叠(60)。
10.根据权利要求1或者根据引用权利要求1的各权利要求之一所述的方法,其中支承体层(2)包含塑料材料。
11.根据权利要求10所述的方法,其中塑料材料包含环氧树脂、聚对苯二甲酸乙二酯和/或聚合物。
12.根据权利要求10或11所述的方法,其中塑料材料具有在150℃范围中的硬化温度。
13.根据上述权利要求中的任一项所述的方法,其中支承体层(2)具有小于或等于100μm的厚度。
14.根据上述权利要求中的任一项所述的方法,其中支承体层(2)包含导热的材料。
15.根据上述权利要求中的任一项所述的方法,其中支承体层(2)包含电绝缘的材料。
16.根据权利要求2或者根据引用权利要求2的权利要求所述的方法,其中支承体层(2)具有至少一个电印制导线(10a)。
17.根据权利要求1至14中的任一项所述的方法,其中支承体层(2)具有导电的材料。
18.根据上述权利要求中的任一项所述的方法,其中层复合结构(6)在朝着支承体层(2)的侧具有第一接触金属化物(50)。
19.根据权利要求18所述的方法,其中接触金属化物(50)将有源层序列(4)所产生的辐射至少部分地反射。
20.根据上述权利要求中的任一项所述的方法,其中生长衬底(1)借助激光剥离方法被剥离。
21.根据上述权利要求中的任一项所述的方法,其中在剥离生长衬底(1)之后层复合结构(6)设置有第二接触金属化物(3)。
22.根据权利要求21所述的方法,其中将柔性的覆盖层(11)施加到第二接触金属化物(3)上。
23.根据权利要求22所述的方法,其中柔性的覆盖层(11)被部分地或者完全地硬化。
24.根据权利要求22或23所述的方法,其中覆盖层(11)是薄片。
25.一种薄膜半导体器件(8),具有
-层堆叠(60),
-设置在层堆叠(60)上的自支承的支承体层(2),其中支承体层(2)被硬化。
26.一种薄膜半导体器件(8),具有
-层堆叠(60),
-设置在层堆叠(60)上的自支承的支承体层(2),其中支承体层(2)具有基本层(2b)和朝着层堆叠(60)的粘附层(2a),所述粘附层(2a)粘附在层堆叠(60)上。
27.根据权利要求26所述的薄膜半导体器件(8),其中粘附层(2a)由热熔粘合剂形成。
28.根据权利要求26或27所述的薄膜半导体器件(8),其中基本层(2b)由塑料材料形成。
29.根据权利要求25至28中的任一项所述的薄膜半导体器件(8),其中支承体层(2)是薄片。
30.根据权利要求25至29中的任一项所述的薄膜半导体器件(8),其中支承体层(2)是透明的。
31.根据权利要求25至30中的任一项所述的薄膜半导体器件(8),其中层堆叠(60)具有有源的层堆叠(40),用于产生电磁辐射。
32.根据权利要求25或者根据引用权利要求25的各权利要求之一所述的薄膜半导体器件(8),其中支承体层(2)包含塑料材料。
33.根据权利要求32所述的薄膜半导体器件(8),其中支承体层包含环氧树脂、聚对苯二甲酸乙二酯和/或聚酰亚胺。
34.根据权利要求25至33中的任一项所述的薄膜半导体器件(8),其中支承体层(2)包含电绝缘的材料。
35.根据权利要求26或者根据引用权利要求26的权利要求所述的薄膜半导体器件(8),其中支承体层(2)具有至少一个电印制导线(10a)。
36.根据权利要求25至33中的任一项所述的薄膜半导体器件(8),其中支承体层(2)包含导电的材料。
37.根据权利要求36所述的薄膜半导体器件(8),其中支承体层(2)含有金属,特别是铝、银、钛或者铜,或者合金,特别是黄铜。
38.根据权利要求36所述的薄膜半导体器件(8),其中支承体层(2)包含碳纤维。
39.根据权利要求25至37中的任一项所述的薄膜半导体器件(8),其中支承体层(2)包含硅酸盐。
40.根据权利要求25至39中的任一项所述的薄膜半导体器件(8),其中支承体层(2)具有小于或等于100μm的厚度。
41.根据权利要求25至40中的任一项所述的薄膜半导体器件(8),其中半导体器件在背离支承体层(2)的侧具有自支承的覆盖层(11)。
42.根据权利要求41所述的薄膜半导体器件(8),其中覆盖层(11)具有光学结构。
43.根据权利要求41或42所述的薄膜半导体器件(8),其中覆盖层(11)包含转换材料。
44.根据权利要求41至43中的任一项所述的薄膜半导体器件(8),其中在支承体层(2)和覆盖层(11)之间设置了填充层(17)。
45.根据权利要求41至44中的任一项所述的薄膜半导体器件(8),其中支承体层(2)和覆盖层(11)形成用于发射辐射的半导体器件(8)的壳体。
46.根据权利要求41至45中的任一项所述的薄膜半导体器件(8),其中覆盖层(11)对于有源的层堆叠(40)产生的辐射是可穿透的。
47.根据权利要求46所述的薄膜半导体器件(8),其中薄膜半导体器件(8)双侧地发射。
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CN102214760A (zh) * | 2010-04-09 | 2011-10-12 | Lg伊诺特有限公司 | 发光器件和发光器件封装 |
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- 2006-08-04 JP JP2008524355A patent/JP5361381B2/ja active Active
- 2006-08-04 WO PCT/DE2006/001367 patent/WO2007016908A1/de active Application Filing
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Cited By (7)
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CN102194937A (zh) * | 2010-03-05 | 2011-09-21 | Lg伊诺特有限公司 | 发光器件、制造发光器件的方法、发光器件封装 |
US8803174B2 (en) | 2010-03-05 | 2014-08-12 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package |
CN102214760A (zh) * | 2010-04-09 | 2011-10-12 | Lg伊诺特有限公司 | 发光器件和发光器件封装 |
US8866374B2 (en) | 2010-04-09 | 2014-10-21 | Lg Innotek Co., Ltd. | Light emitting device having a multilayer re-emission layer and light emitting device package including the same |
CN102214760B (zh) * | 2010-04-09 | 2015-04-22 | Lg伊诺特有限公司 | 发光器件和发光器件封装 |
CN102263182A (zh) * | 2010-05-25 | 2011-11-30 | Lg伊诺特有限公司 | 发光器件及其制造方法、发光器件封装以及照明系统 |
US9048377B2 (en) | 2010-05-25 | 2015-06-02 | Lg Innotek Co., Ltd. | Light emitting device, method for fabricating the light emitting device, light emitting device package, and lighting unit |
Also Published As
Publication number | Publication date |
---|---|
EP1911104B1 (de) | 2019-05-15 |
CN101238593B (zh) | 2010-05-26 |
US20100133564A1 (en) | 2010-06-03 |
DE102005055293A1 (de) | 2007-02-15 |
JP2009503878A (ja) | 2009-01-29 |
TW200746231A (en) | 2007-12-16 |
US8058147B2 (en) | 2011-11-15 |
TWI319591B (en) | 2010-01-11 |
KR101330455B1 (ko) | 2013-11-15 |
EP1911104A1 (de) | 2008-04-16 |
JP5361381B2 (ja) | 2013-12-04 |
KR20080035679A (ko) | 2008-04-23 |
WO2007016908A1 (de) | 2007-02-15 |
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