CN101228459B - 放射线检测设备和放射线图像拾取系统 - Google Patents

放射线检测设备和放射线图像拾取系统 Download PDF

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Publication number
CN101228459B
CN101228459B CN2006800271666A CN200680027166A CN101228459B CN 101228459 B CN101228459 B CN 101228459B CN 2006800271666 A CN2006800271666 A CN 2006800271666A CN 200680027166 A CN200680027166 A CN 200680027166A CN 101228459 B CN101228459 B CN 101228459B
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China
Prior art keywords
light
electrode
radiation detection
radiation
conversion element
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Expired - Fee Related
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CN2006800271666A
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English (en)
Chinese (zh)
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CN101228459A (zh
Inventor
望月千织
渡边实
石井孝昌
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/298—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation the devices being characterised by field-effect operation, e.g. MIS type detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
CN2006800271666A 2005-07-25 2006-07-21 放射线检测设备和放射线图像拾取系统 Expired - Fee Related CN101228459B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP214226/2005 2005-07-25
JP2005214226A JP5207583B2 (ja) 2005-07-25 2005-07-25 放射線検出装置および放射線検出システム
PCT/JP2006/314931 WO2007013570A1 (en) 2005-07-25 2006-07-21 Radiation detecting apparatus, and radiation image pickup system

Publications (2)

Publication Number Publication Date
CN101228459A CN101228459A (zh) 2008-07-23
CN101228459B true CN101228459B (zh) 2012-07-04

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CN2006800271666A Expired - Fee Related CN101228459B (zh) 2005-07-25 2006-07-21 放射线检测设备和放射线图像拾取系统

Country Status (5)

Country Link
US (2) US7829858B2 (https=)
EP (1) EP1910870A4 (https=)
JP (1) JP5207583B2 (https=)
CN (1) CN101228459B (https=)
WO (1) WO2007013570A1 (https=)

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JP5489542B2 (ja) * 2008-07-01 2014-05-14 キヤノン株式会社 放射線検出装置及び放射線撮像システム
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CN101762922B (zh) * 2008-12-24 2012-05-30 京东方科技集团股份有限公司 触摸式电子纸及其制造方法
TWI415283B (zh) * 2009-02-18 2013-11-11 Au Optronics Corp Ｘ射線感測器及其製作方法
JP2010245366A (ja) * 2009-04-08 2010-10-28 Fujifilm Corp 電子素子及びその製造方法、並びに表示装置
DE102009024225A1 (de) * 2009-06-08 2010-12-16 Siemens Aktiengesellschaft Röntgendetektor
JP2011238897A (ja) * 2010-04-13 2011-11-24 Canon Inc 検出装置及びその製造方法並びに検出システム
US9473714B2 (en) * 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
JP2012079820A (ja) * 2010-09-30 2012-04-19 Canon Inc 検出装置及び放射線検出システム
US8772728B2 (en) * 2010-12-31 2014-07-08 Carestream Health, Inc. Apparatus and methods for high performance radiographic imaging array including reflective capability
JP2012145537A (ja) * 2011-01-14 2012-08-02 Canon Inc 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法
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JP6169922B2 (ja) * 2012-08-29 2017-07-26 東芝メディカルシステムズ株式会社 Ｘ線検出サブモジュール、ｘ線検出モジュールおよびｘ線ｃｔ装置
JP5709810B2 (ja) 2012-10-02 2015-04-30 キヤノン株式会社 検出装置の製造方法、その検出装置及び検出システム
JP2014225527A (ja) * 2013-05-15 2014-12-04 キヤノン株式会社 検出装置、及び、検出システム
US9093347B2 (en) * 2013-05-15 2015-07-28 Canon Kabushiki Kaisha Detecting apparatus and detecting system
US9360564B2 (en) * 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
WO2016076824A1 (en) 2014-11-10 2016-05-19 Halliburton Energy Services, Inc. Energy detection apparatus, methods, and systems
KR102226601B1 (ko) * 2014-12-02 2021-03-15 삼성디스플레이 주식회사 터치 패널 및 그 제조방법
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WO2018205028A1 (en) * 2017-05-09 2018-11-15 Ka Imaging Inc. Apparatus for radiation detection in a digital imaging system
KR102432252B1 (ko) * 2017-06-13 2022-08-16 삼성전자주식회사 엑스선 검출기, 이를 포함한 엑스선 촬영 장치 및 그 제조 방법
CN109786499A (zh) * 2019-01-11 2019-05-21 惠科股份有限公司 半导体、x射线探测器及显示设备
CN110335876A (zh) * 2019-04-29 2019-10-15 上海天马微电子有限公司 放射线图像检测面板及其制作方法、放射线图像检测装置
JP7458164B2 (ja) * 2019-10-23 2024-03-29 株式会社ジャパンディスプレイ 半導体装置
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Also Published As

Publication number Publication date
CN101228459A (zh) 2008-07-23
US20090283689A1 (en) 2009-11-19
JP2007035773A (ja) 2007-02-08
WO2007013570A1 (en) 2007-02-01
US8164065B2 (en) 2012-04-24
EP1910870A4 (en) 2016-12-14
JP5207583B2 (ja) 2013-06-12
EP1910870A1 (en) 2008-04-16
US7829858B2 (en) 2010-11-09
US20110017919A1 (en) 2011-01-27

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