CN101228293B - 化学镀钯液 - Google Patents
化学镀钯液 Download PDFInfo
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- CN101228293B CN101228293B CN200680026398XA CN200680026398A CN101228293B CN 101228293 B CN101228293 B CN 101228293B CN 200680026398X A CN200680026398X A CN 200680026398XA CN 200680026398 A CN200680026398 A CN 200680026398A CN 101228293 B CN101228293 B CN 101228293B
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- plating
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- palladium
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 238000007747 plating Methods 0.000 title claims abstract description 80
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 40
- -1 amine compound Chemical class 0.000 claims abstract description 26
- 239000008139 complexing agent Substances 0.000 claims abstract description 11
- 150000003839 salts Chemical class 0.000 claims abstract description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 10
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims abstract description 10
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000001622 bismuth compounds Chemical class 0.000 claims abstract description 7
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 150000002941 palladium compounds Chemical class 0.000 claims abstract description 7
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 5
- 235000019253 formic acid Nutrition 0.000 claims abstract description 5
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000001735 carboxylic acids Chemical class 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims description 36
- 239000002253 acid Substances 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 230000002829 reductive effect Effects 0.000 claims description 7
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 6
- 229910000085 borane Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 11
- 229910052797 bismuth Inorganic materials 0.000 abstract description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 3
- 239000003638 chemical reducing agent Substances 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 abstract 1
- 239000003381 stabilizer Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 35
- 239000006210 lotion Substances 0.000 description 10
- 230000003628 erosive effect Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000005864 Sulphur Substances 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 5
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000006174 pH buffer Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-L Phosphate ion(2-) Chemical compound OP([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-L 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PPNKDDZCLDMRHS-UHFFFAOYSA-N dinitrooxybismuthanyl nitrate Chemical compound [Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PPNKDDZCLDMRHS-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- XKUKSGPZAADMRA-UHFFFAOYSA-N glycyl-glycyl-glycine Chemical compound NCC(=O)NCC(=O)NCC(O)=O XKUKSGPZAADMRA-UHFFFAOYSA-N 0.000 description 2
- YMAWOPBAYDPSLA-UHFFFAOYSA-N glycylglycine Chemical compound [NH3+]CC(=O)NCC([O-])=O YMAWOPBAYDPSLA-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical class NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical class CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 108010008488 Glycylglycine Proteins 0.000 description 1
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 1
- JYXGIOKAKDAARW-UHFFFAOYSA-N N-(2-hydroxyethyl)iminodiacetic acid Chemical compound OCCN(CC(O)=O)CC(O)=O JYXGIOKAKDAARW-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- GUIHLLLZLXBXMW-UHFFFAOYSA-N [Bi].S(O)(O)=O Chemical compound [Bi].S(O)(O)=O GUIHLLLZLXBXMW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000002648 azanetriyl group Chemical group *N(*)* 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 239000007998 bicine buffer Substances 0.000 description 1
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910000380 bismuth sulfate Inorganic materials 0.000 description 1
- VDTVZBCTOQDZSH-UHFFFAOYSA-N borane N-ethylethanamine Chemical compound B.CCNCC VDTVZBCTOQDZSH-UHFFFAOYSA-N 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- BEQZMQXCOWIHRY-UHFFFAOYSA-H dibismuth;trisulfate Chemical compound [Bi+3].[Bi+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O BEQZMQXCOWIHRY-UHFFFAOYSA-H 0.000 description 1
- 125000003963 dichloro group Chemical group Cl* 0.000 description 1
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 description 1
- IFQUWYZCAGRUJN-UHFFFAOYSA-N ethylenediaminediacetic acid Chemical compound OC(=O)CNCCNCC(O)=O IFQUWYZCAGRUJN-UHFFFAOYSA-N 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 108010067216 glycyl-glycyl-glycine Proteins 0.000 description 1
- 229940043257 glycylglycine Drugs 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- RTWNYYOXLSILQN-UHFFFAOYSA-N methanediamine Chemical compound NCN RTWNYYOXLSILQN-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- RFLFDJSIZCCYIP-UHFFFAOYSA-L palladium(2+);sulfate Chemical compound [Pd+2].[O-]S([O-])(=O)=O RFLFDJSIZCCYIP-UHFFFAOYSA-L 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
本发明的课题在于提供一种化学镀钯液，其浴液稳定性高、可以获得耐腐蚀性、焊料接合性、引线焊接性优异的被膜。本发明通过提供下述化学镀钯液而解决了上述课题，即，一种化学镀钯液，其特征在于，含有水溶性钯化合物、络合剂和稳定剂，所述络合剂是氨、胺化合物、氨基羧酸化合物、羧酸的任一种，所述稳定剂是铋或铋化合物。优选进而含有作为还原剂的次磷酸、亚磷酸、甲酸、乙酸、肼、硼氢化物、胺硼烷化合物和它们的盐的任一种。
Description
技术领域
本发明涉及在电子部件等的镀敷中使用的化学镀钯液、镀敷物和镀敷方法。
背景技术
化学镀镍/镀金液的使用目的主要是提高基底金属的耐腐蚀性、焊料接合性、引线焊接性。特别是经常用于搭载半导体凸块、半导体的封装基板、便携电话用基板等。
近年，伴随电子器件的高性能化，为了提高可靠性，要求进一步提高耐腐蚀性、焊料接合性，人们认为在化学镀镍层和化学镀金层之间插入化学镀钯层是有效的。作为化学镀钯液，可以列举出专利文献1、专利文献2记载的镀敷液。这些化学镀钯液含有硫化合物作为浴液稳定剂，因此有若干硫共析到钯被膜中，由于该硫的偏析，使得耐腐蚀性、焊料接合性低下。
专利文献1：日本专利第3204035号公报
专利文献2：特公平8-28561号公报
发明内容
鉴于上述事实，本发明的目的在于提供一种浴液稳定性高、可以获得耐腐蚀性、焊料接合性、引线焊接性优异的被膜的化学镀钯液。
本发明者们为了实现上述目的，进行了深入研究，结果发现，通过代替硫化合物而使用铋或铋化合物作为浴液稳定剂，可以获得与使用硫化合物的情况同样程度的浴液稳定性高、可以获得耐腐蚀性、焊料接合性、引线焊接性更优异的被膜的化学镀钯液。
即，本发明的构成如下。
(1)一种化学镀钯液，其特征在于，含有水溶性钯化合物、络合剂和稳定剂，所述络合剂是氨、胺化合物、氨基羧酸化合物、羧酸的任一种，所述稳定剂是铋或铋化合物。
(2)上述(1)记载的化学镀钯液，其特征在于，进而含有作为还原剂的次磷酸、亚磷酸、甲酸、乙酸、肼、硼氢化物、胺硼烷化合物和它们的盐的任一种。
(3)一种钯镀敷物，其特征在于，使用上述(1)或(2)记载的化学镀钯液进行了成膜。
(4)一种镀敷方法，其特征在于，使用上述(1)或(2)记载的化学镀钯液，通过化学镀敷进行成膜。
本发明的化学镀钯液，稳定性高，可以获得耐腐蚀性、焊料接合性、引线焊接性优异的被膜。因此，在对印制布线板等的基底进行了镀镍后，通过使用本发明的化学镀钯液进行镀敷，可以提高耐腐蚀性、焊料接合性。
具体实施方式
下面，对本发明的化学镀钯液进行详细地说明。
本发明的化学镀钯液，是含有水溶性钯化合物、络合剂和稳定剂的水溶液，其中，所述络合剂是氨、胺化合物、氨基羧酸化合物、羧酸的任一种，所述稳定剂是铋或铋化合物。
作为水溶性钯化合物，没有特别的限定，可以使用例如氯化钯、二氯四氨合钯等的氯化氨合钯、氨合钯、硫酸钯、亚硝酸钯、乙酸钯盐等。本发明的化学镀钯液，在镀敷液中含有0.1～100g/L、优选含有0.1～20g/L的这些水溶性钯化合物。如果水溶性钯化合物的浓度小于0.01g/L，则镀敷速度显著变慢，即使超过100g/L，效果也饱和，没有优势。
作为络合剂的胺化合物，没有特别的限制，可以使用例如甲基胺、二甲基胺、三甲基胺、乙基胺、二乙基胺、三乙基胺、苄基胺、亚甲基二胺、乙二胺、四亚甲基二胺、二亚乙基三胺、三亚乙基四胺、四亚乙基五胺、六亚甲基四胺等。
作为氨基羧酸化合物，没有特别的限制，可以使用例如，乙二胺四乙酸、羟乙基乙二胺三乙酸、二羟乙基乙二胺二乙酸、丙二胺四乙酸、二亚乙基三胺五乙酸、三亚乙基四胺六乙酸、甘氨酸、甘氨酰甘氨酸、甘氨酰甘氨酰甘氨酸、二羟乙基甘氨酸、亚氨基二乙酸、羟乙基亚氨基二乙酸、次氮基三乙酸、次氮基三丙酸或它们的碱金属盐、碱土类金属盐、铵盐等。
作为羧酸，没有特别的限制，可以使用例如甲酸、乙酸、丙酸、柠檬酸、丙二酸、苹果酸、草酸、琥珀酸、酒石酸、乳酸、丁酸等。
作为络合剂，可以使用氨、胺化合物、氨基羧酸化合物、羧酸的任一种，优选胺化合物和氨基羧酸化合物。
络合剂，在镀敷液中含有0.1～200g/L，优选含有0.1～100g/L。当络合剂的浓度小于0.01g/L时，络合力弱，即使超过200g/L，效果也饱和，没有优势。
作为稳定剂，使用铋或铋化合物。作为铋化合物，没有特别的限制，可以使用例如，氧化铋、硫酸铋、亚硫酸铋、硝酸铋、氯化铋、乙酸铋等。稳定剂，在镀敷液中含有0.1～1000mg/L，优选含有1～100mg/L。稳定剂的浓度如果小于0.1mg/L，则浴液的稳定性低下，如果超过1000mg/L，则镀敷速度低下。
本发明的化学镀钯液，优选进而含有作为还原剂的次磷酸、亚磷酸、甲酸、乙酸、肼、硼氢化物、胺硼烷化合物和它们的盐的任一种。作为硼氢化物，没有特别的限制，可以使用例如硼氢化钠、硼氢化钾、硼氢化铵等，作为胺硼烷化合物，没有特别的限制，可以使用例如二甲基胺硼烷、二乙基胺硼烷等。另外，作为上述酸的盐，可以列举出碱金属盐、碱土类金属盐、铵盐等。
作为还原剂，优选亚磷酸、次磷酸和它们的盐。
这些还原剂，在镀敷液中含量为0.01～200g/L，优选0.1～100g/L。如果还原剂的浓度小于0.01g/L，则镀敷速度低下，如果超过200 g/L，则效果饱和，产生液体分解，没有优势。
进而，本发明的化学镀钯液，根据需要，可以添加pH缓冲剂。作为 pH缓冲剂，特别优选磷酸类化合物。
作为磷酸类化合物，可以列举出，磷酸、焦磷酸或它们的碱金属盐、碱土类金属盐、铵盐、磷酸二氢碱金属盐、磷酸二氢碱土类金属盐、磷酸二氢铵、磷酸氢二碱金属盐、磷酸氢二碱土类金属盐、磷酸氢二铵等。镀敷液中的磷酸类化合物的浓度，优选为0.01～200g/L，更优选为0.1～100g/L。
本发明的镀钯液的pH，优选使用上述化合物作为pH缓冲剂来将pH调节为4～10，更优选调节为5～9。
另外，本发明的镀钯液，优选在浴温10～95℃下使用，更优选在25～70℃下使用。
镀敷液的pH和浴温在上述范围之外的情况下，存在镀敷速度慢、容易引起浴液分解等的问题。
作为镀敷方法，可以将被镀敷物浸渍在本发明的镀敷液中。
作为被镀敷物，可以列举搭载半导体凸块、半导体的封装基板、印制布线基板等的电子部件，本发明的化学镀钯液，作为它们的接合用镀层，可以适合用于在化学镀镍层和化学镀金物之间插入的化学镀钯层。
实施例
通过下面所示的实施例和比较例对本发明进行进一步说明。
实施例1～5、比较例1～3
调制表1所示的各组成的镀敷液作为化学镀钯液。作为被镀敷材料，使用具有500个抗蚀剂开口部0.48mmφ的焊盘(pad)的BGA用印制布线板，用下述工序来进行镀敷。
碱脱脂(日矿メタルプレ一テイング制、KG-510)
(45℃、pH12.0、2分钟)
→软蚀刻(硫酸+过硫酸钠类、25℃、45秒)
→硫酸洗涤(3％、25℃、2分钟)
→预浸渍(盐酸类、25℃、30秒)
→活化剂(日矿メタルプレ一テイング制、KG-522)
(氯化物类、Pd浓度：50mg/L、25℃、pH＜1.0、2分钟)
→硫酸洗涤(3％、25℃、10秒)
→化学镀镍(镀敷液：日矿メタルプレ一テイング制、KG-530)
(88℃、pH4.5、25分钟、磷含量7％)
→化学镀钯(表1所述的镀敷液、镀敷条件)
→化学镀金(镀敷液：日矿メタルプレ一テイング制、KG-545)
(Au浓度：2.0g/L、88℃、pH5.0、10分钟)
(除了预浸渍→活化剂的期间以外，全部插入1分钟的水洗工序)对所获得的镀敷物进行如下的评价。
耐腐蚀性：
在对基板进行了规定的镀敷后，在20体积％的硝酸水溶液中浸渍10分钟，然后水洗，干燥。然后在光学显微镜50倍下观察全部焊盘的镀金的外观。在500个焊盘中，变色少于1％的记作○，1％以上、小于10％的记作△，10％以上记作×。
焊料接合强度：
在对基板进行了规定的镀敷处理后，在165℃对基板进行24小时的热处理。然后在20个0.48mmφ的焊盘中涂布助焊剂，搭载0.6mmφ的Sn-4.0Ag-0.5Cu焊料球，用回焊炉在加热温度为250℃下进行回焊。使用デイジ社制的粘合力试验机4000，用加热拉伸法测定接合强度。
浴液寿命：
对基板实施实际的镀钯轮回(turn)实验。在建浴钯浓度为2g/L的镀敷液的情况下，将2g/L的钯析出到基板的量的镀敷称作1MTO。通常化学镀钯液以3～5MTO的程度更新浴液，因此只要具有5MTO以上的浴液稳定性，就可以说稳定性高。因此，轮回实验进行至5MTO，研究是否有浴液分解、被膜特性的低下。其中，轮回实验中的钯浓度每减少10％左右，就补充钯。
评价结果如表1所示。
由表1的结果可知，本发明的化学镀钯液，耐腐蚀性、焊料接合性优异。另外可知，与现有的使用硫化合物作为稳定剂的镀敷液具有相同程度的优异的稳定性。
Claims (3)
1.一种化学镀钯液，其特征在于，含有水溶性钯化合物、络合剂、稳定剂和还原剂，所述络合剂是氨、胺化合物、氨基羧酸化合物、羧酸的任一种，所述稳定剂是铋化合物，所述还原剂是次磷酸、亚磷酸、甲酸、乙酸、肼、硼氢化物、胺硼烷化合物和它们的盐的任一种。
2.一种钯镀敷物，其特征在于，使用权利要求1所述的化学镀钯液进行了成膜。
3.一种镀敷方法，其特征在于，使用权利要求1所述的化学镀钯液，通过化学镀敷进行成膜。
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| WO2007010760A1 (ja) | 2007-01-25 |
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| HK1120572A1 (en) | 2009-04-03 |
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| JPWO2007010760A1 (ja) | 2009-01-29 |
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