CN101202421A - 氮化物类半导体元件及其制造方法 - Google Patents

氮化物类半导体元件及其制造方法 Download PDF

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Publication number
CN101202421A
CN101202421A CNA2007101861686A CN200710186168A CN101202421A CN 101202421 A CN101202421 A CN 101202421A CN A2007101861686 A CNA2007101861686 A CN A2007101861686A CN 200710186168 A CN200710186168 A CN 200710186168A CN 101202421 A CN101202421 A CN 101202421A
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China
Prior art keywords
based semiconductor
nitride
groove
semiconductor device
fiber waveguide
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CNA2007101861686A
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English (en)
Chinese (zh)
Inventor
别所靖之
野村康彦
畑雅幸
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication of CN101202421A publication Critical patent/CN101202421A/zh
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CNA2007101861686A 2006-11-30 2007-11-30 氮化物类半导体元件及其制造方法 Pending CN101202421A (zh)

Applications Claiming Priority (3)

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JP2006323582 2006-11-30
JP2006323582 2006-11-30
JP2007283225 2007-10-31

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CN101202421A true CN101202421A (zh) 2008-06-18

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JP (2) JP4573863B2 (https=)
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103326233A (zh) * 2012-03-19 2013-09-25 欧司朗光电半导体有限公司 激光二极管装置
US9331453B2 (en) 2012-04-12 2016-05-03 Osram Opto Semiconductors Gmbh Laser diode device
US9356423B2 (en) 2012-03-19 2016-05-31 Osram Opto Semiconductors Gmbh Laser diode assembly
WO2018130046A1 (zh) * 2017-01-12 2018-07-19 中国科学院苏州纳米技术与纳米仿生研究所 氮化物半导体发光器件及其制作方法
CN109309340A (zh) * 2017-07-28 2019-02-05 欧司朗光电半导体有限公司 用于制造多个激光二极管的方法和激光二极管
CN113131331A (zh) * 2019-12-31 2021-07-16 华星光通科技股份有限公司 不连续脊状结构的半导体激光元件的制造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045076A (ja) * 2008-08-08 2010-02-25 Sanyo Electric Co Ltd 発光素子の形成方法
JP5670040B2 (ja) * 2009-10-09 2015-02-18 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子
JP5625355B2 (ja) * 2010-01-07 2014-11-19 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、ｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5961989B2 (ja) * 2011-12-02 2016-08-03 日亜化学工業株式会社 半導体レーザ素子及びその製造方法
US12555976B2 (en) 2020-06-12 2026-02-17 Nichia Corporation Laser diode element and method for manufacturing same
JP2022044464A (ja) * 2020-09-07 2022-03-17 ソニーグループ株式会社 半導体レーザおよび半導体レーザ装置
JP2023111096A (ja) * 2022-01-31 2023-08-10 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子及び半導体レーザ素子の製造方法
CN115832870B (zh) * 2022-11-09 2025-05-30 中国科学院半导体研究所 半导体激光器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123086A (ja) * 1983-12-08 1985-07-01 Nec Corp 半導体レ−ザの製造方法
JPS60144985A (ja) * 1983-12-30 1985-07-31 Fujitsu Ltd 半導体発光素子の製造方法
JPS62190892A (ja) * 1986-02-18 1987-08-21 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置の製造方法
JPH01280388A (ja) * 1988-05-06 1989-11-10 Sharp Corp 半導体素子の製造方法
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
JP4169821B2 (ja) * 1998-02-18 2008-10-22 シャープ株式会社 発光ダイオード
EP0977276A1 (en) * 1998-07-08 2000-02-02 Hewlett-Packard Company Semiconductor device cleave initiation
JP2002190635A (ja) * 2000-12-20 2002-07-05 Sharp Corp 半導体レーザ素子およびその製造方法
JP4703014B2 (ja) * 2001-02-15 2011-06-15 シャープ株式会社 窒化物半導体発光素子、光学装置、および半導体発光装置とその製造方法
JP2003069152A (ja) * 2001-06-15 2003-03-07 Sony Corp マルチビーム半導体レーザ素子
JP2003017791A (ja) * 2001-07-03 2003-01-17 Sharp Corp 窒化物半導体素子及びこの窒化物半導体素子の製造方法
JP4518733B2 (ja) * 2002-06-17 2010-08-04 ソニー株式会社 窒化ガリウム系半導体レーザ素子の製造方法
JP4385590B2 (ja) * 2002-11-26 2009-12-16 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP4539077B2 (ja) * 2003-10-29 2010-09-08 日本電気株式会社 半導体素子の製造方法
JP2006294975A (ja) * 2005-04-13 2006-10-26 Mitsubishi Electric Corp 半導体レーザ

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103326233A (zh) * 2012-03-19 2013-09-25 欧司朗光电半导体有限公司 激光二极管装置
US9356423B2 (en) 2012-03-19 2016-05-31 Osram Opto Semiconductors Gmbh Laser diode assembly
US9331453B2 (en) 2012-04-12 2016-05-03 Osram Opto Semiconductors Gmbh Laser diode device
WO2018130046A1 (zh) * 2017-01-12 2018-07-19 中国科学院苏州纳米技术与纳米仿生研究所 氮化物半导体发光器件及其制作方法
CN108305918A (zh) * 2017-01-12 2018-07-20 中国科学院苏州纳米技术与纳米仿生研究所 氮化物半导体发光器件及其制作方法
CN108305918B (zh) * 2017-01-12 2019-07-16 中国科学院苏州纳米技术与纳米仿生研究所 氮化物半导体发光器件及其制作方法
CN109309340A (zh) * 2017-07-28 2019-02-05 欧司朗光电半导体有限公司 用于制造多个激光二极管的方法和激光二极管
US10651625B2 (en) 2017-07-28 2020-05-12 Osram Oled Gmbh Method of producing a plurality of laser diodes and laser diode
CN109309340B (zh) * 2017-07-28 2020-12-08 欧司朗光电半导体有限公司 用于制造多个激光二极管的方法和激光二极管
US10985528B2 (en) 2017-07-28 2021-04-20 Osram Oled Gmbh Laser diodes separated from a plurality of laser bars
CN113131331A (zh) * 2019-12-31 2021-07-16 华星光通科技股份有限公司 不连续脊状结构的半导体激光元件的制造方法

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JP2008160070A (ja) 2008-07-10
JP2009004820A (ja) 2009-01-08
JP4573863B2 (ja) 2010-11-04

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Application publication date: 20080618