CN101136426B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN101136426B CN101136426B CN2007101821509A CN200710182150A CN101136426B CN 101136426 B CN101136426 B CN 101136426B CN 2007101821509 A CN2007101821509 A CN 2007101821509A CN 200710182150 A CN200710182150 A CN 200710182150A CN 101136426 B CN101136426 B CN 101136426B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 155
- 238000004519 manufacturing process Methods 0.000 title abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000010276 construction Methods 0.000 claims description 55
- 239000012212 insulator Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 18
- 230000006870 function Effects 0.000 abstract description 8
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- 238000000034 method Methods 0.000 description 40
- 238000005516 engineering process Methods 0.000 description 13
- 238000001259 photo etching Methods 0.000 description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 12
- 229910052721 tungsten Inorganic materials 0.000 description 12
- 239000010937 tungsten Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 8
- 230000010363 phase shift Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000003870 refractory metal Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
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- 238000002360 preparation method Methods 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-191331 | 2006-07-12 | ||
JP2006191331A JP4865433B2 (ja) | 2006-07-12 | 2006-07-12 | 半導体装置及びその製造方法 |
JP2006191331 | 2006-07-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101136426A CN101136426A (zh) | 2008-03-05 |
CN101136426B true CN101136426B (zh) | 2012-06-27 |
Family
ID=38948336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101821509A Active CN101136426B (zh) | 2006-07-12 | 2007-07-12 | 半导体器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (4) | US7714314B2 (zh) |
JP (1) | JP4865433B2 (zh) |
KR (1) | KR101413821B1 (zh) |
CN (1) | CN101136426B (zh) |
TW (1) | TWI389362B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101000471B1 (ko) * | 2008-04-28 | 2010-12-14 | 주식회사 하이닉스반도체 | 상변화 기억 소자 및 그의 제조방법 |
US8298914B2 (en) * | 2008-08-19 | 2012-10-30 | International Business Machines Corporation | 3D integrated circuit device fabrication using interface wafer as permanent carrier |
JP5700602B1 (ja) * | 2014-02-05 | 2015-04-15 | ウィンボンド エレクトロニクス コーポレーション | 不揮発性半導体メモリ |
JP6548003B2 (ja) * | 2014-04-15 | 2019-07-24 | パナソニックIpマネジメント株式会社 | 不揮発性記憶装置 |
TWI624933B (zh) * | 2014-05-20 | 2018-05-21 | 華邦電子股份有限公司 | 非揮發性半導體記憶體 |
JP2016076561A (ja) * | 2014-10-03 | 2016-05-12 | 株式会社東芝 | 記憶装置 |
CN105702630B (zh) * | 2014-11-26 | 2020-07-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US10762960B2 (en) * | 2017-11-30 | 2020-09-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Resistive random access memory device |
US11011702B2 (en) | 2019-08-07 | 2021-05-18 | Winbond Electronics Corp. | Memory devices and methods for forming the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6391750B1 (en) * | 1999-08-18 | 2002-05-21 | Advanced Micro Devices, Inc. | Method of selectively controlling contact resistance by controlling impurity concentration and silicide thickness |
CN1670979A (zh) * | 2004-03-18 | 2005-09-21 | 国际商业机器公司 | 位于绝缘体上硅结构衬底上的相变存储器单元 |
CN1702883A (zh) * | 2004-05-27 | 2005-11-30 | 三星电子株式会社 | 具有相变存储单元的半导体器件、使用它的电子系统和其制造方法 |
US7071485B2 (en) * | 2003-05-22 | 2006-07-04 | Hitachi, Ltd. | Semiconductor integrated circuit device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03126266A (ja) * | 1989-10-12 | 1991-05-29 | Sony Corp | 半導体不揮発性メモリ |
JP3126266B2 (ja) | 1993-06-18 | 2001-01-22 | 三菱電機株式会社 | 空気調和装置 |
US6764894B2 (en) | 2001-08-31 | 2004-07-20 | Ovonyx, Inc. | Elevated pore phase-change memory |
ATE335289T1 (de) * | 2002-10-11 | 2006-08-15 | Koninkl Philips Electronics Nv | Elektrische einrichtung mit einem phasenänderungsmaterial |
JP2004185755A (ja) * | 2002-12-05 | 2004-07-02 | Sharp Corp | 不揮発性半導体記憶装置 |
US6869883B2 (en) | 2002-12-13 | 2005-03-22 | Ovonyx, Inc. | Forming phase change memories |
KR100504700B1 (ko) | 2003-06-04 | 2005-08-03 | 삼성전자주식회사 | 고집적 상변환 램 |
JP4350459B2 (ja) | 2003-08-26 | 2009-10-21 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
JP4192060B2 (ja) * | 2003-09-12 | 2008-12-03 | シャープ株式会社 | 不揮発性半導体記憶装置 |
JP4834542B2 (ja) * | 2004-04-08 | 2011-12-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2006165365A (ja) | 2004-12-09 | 2006-06-22 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
TWI295506B (en) * | 2005-02-03 | 2008-04-01 | Samsung Electronics Co Ltd | Semiconductor device having transistor with vertical gate electrode and method of fabricating the same |
US7321130B2 (en) * | 2005-06-17 | 2008-01-22 | Macronix International Co., Ltd. | Thin film fuse phase change RAM and manufacturing method |
US7495946B2 (en) * | 2006-03-02 | 2009-02-24 | Infineon Technologies Ag | Phase change memory fabricated using self-aligned processing |
-
2006
- 2006-07-12 JP JP2006191331A patent/JP4865433B2/ja active Active
-
2007
- 2007-06-29 TW TW096123728A patent/TWI389362B/zh active
- 2007-07-10 US US11/775,474 patent/US7714314B2/en active Active
- 2007-07-11 KR KR1020070069611A patent/KR101413821B1/ko active IP Right Grant
- 2007-07-12 CN CN2007101821509A patent/CN101136426B/zh active Active
-
2010
- 2010-04-05 US US12/754,049 patent/US7884348B2/en active Active
-
2011
- 2011-01-10 US US12/987,606 patent/US8232543B2/en active Active
-
2012
- 2012-07-03 US US13/541,097 patent/US8546783B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6391750B1 (en) * | 1999-08-18 | 2002-05-21 | Advanced Micro Devices, Inc. | Method of selectively controlling contact resistance by controlling impurity concentration and silicide thickness |
US7071485B2 (en) * | 2003-05-22 | 2006-07-04 | Hitachi, Ltd. | Semiconductor integrated circuit device |
CN1670979A (zh) * | 2004-03-18 | 2005-09-21 | 国际商业机器公司 | 位于绝缘体上硅结构衬底上的相变存储器单元 |
CN1702883A (zh) * | 2004-05-27 | 2005-11-30 | 三星电子株式会社 | 具有相变存储单元的半导体器件、使用它的电子系统和其制造方法 |
Non-Patent Citations (1)
Title |
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同上. |
Also Published As
Publication number | Publication date |
---|---|
US7884348B2 (en) | 2011-02-08 |
US8232543B2 (en) | 2012-07-31 |
US8546783B2 (en) | 2013-10-01 |
KR101413821B1 (ko) | 2014-06-30 |
TW200810163A (en) | 2008-02-16 |
US20080011997A1 (en) | 2008-01-17 |
TWI389362B (zh) | 2013-03-11 |
KR20080006487A (ko) | 2008-01-16 |
US20100193764A1 (en) | 2010-08-05 |
JP4865433B2 (ja) | 2012-02-01 |
US20120286225A1 (en) | 2012-11-15 |
US20110101297A1 (en) | 2011-05-05 |
CN101136426A (zh) | 2008-03-05 |
JP2008021765A (ja) | 2008-01-31 |
US7714314B2 (en) | 2010-05-11 |
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