CN101115865A - 用于钯层沉积的方法和用于该目的的钯镀浴 - Google Patents
用于钯层沉积的方法和用于该目的的钯镀浴 Download PDFInfo
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- CN101115865A CN101115865A CNA2006800043937A CN200680004393A CN101115865A CN 101115865 A CN101115865 A CN 101115865A CN A2006800043937 A CNA2006800043937 A CN A2006800043937A CN 200680004393 A CN200680004393 A CN 200680004393A CN 101115865 A CN101115865 A CN 101115865A
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- Prior art keywords
- palladium
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- nickel
- plating bath
- acid
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 169
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 77
- 238000000151 deposition Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 57
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 36
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052737 gold Inorganic materials 0.000 claims abstract description 19
- 239000010931 gold Substances 0.000 claims abstract description 19
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 69
- 238000007747 plating Methods 0.000 claims description 56
- 230000008021 deposition Effects 0.000 claims description 28
- 238000005844 autocatalytic reaction Methods 0.000 claims description 27
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 14
- 239000011707 mineral Substances 0.000 claims description 14
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical group S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 239000008151 electrolyte solution Substances 0.000 claims description 8
- 150000002940 palladium Chemical class 0.000 claims description 8
- GPNDARIEYHPYAY-UHFFFAOYSA-N palladium(ii) nitrate Chemical compound [Pd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O GPNDARIEYHPYAY-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- RFLFDJSIZCCYIP-UHFFFAOYSA-L palladium(2+);sulfate Chemical compound [Pd+2].[O-]S([O-])(=O)=O RFLFDJSIZCCYIP-UHFFFAOYSA-L 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- 229910052714 tellurium Inorganic materials 0.000 claims description 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052716 thallium Inorganic materials 0.000 claims description 6
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 6
- 229910001020 Au alloy Inorganic materials 0.000 claims description 5
- 239000003353 gold alloy Substances 0.000 claims description 5
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 4
- 150000001449 anionic compounds Chemical class 0.000 claims description 4
- 239000008139 complexing agent Substances 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 150000002891 organic anions Chemical class 0.000 claims description 4
- -1 amine compound Chemical class 0.000 claims description 3
- 239000010953 base metal Substances 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 230000002378 acidificating effect Effects 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 2
- 230000008719 thickening Effects 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 4
- 229910052698 phosphorus Inorganic materials 0.000 claims 4
- 239000011574 phosphorus Substances 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910001080 W alloy Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GSOLWAFGMNOBSY-UHFFFAOYSA-N cobalt Chemical compound [Co][Co][Co][Co][Co][Co][Co][Co] GSOLWAFGMNOBSY-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- UDKYUQZDRMRDOR-UHFFFAOYSA-N tungsten Chemical compound [W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W] UDKYUQZDRMRDOR-UHFFFAOYSA-N 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 239000005749 Copper compound Substances 0.000 abstract description 2
- 150000001880 copper compounds Chemical class 0.000 abstract description 2
- 239000011148 porous material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 11
- 241000218202 Coptis Species 0.000 description 8
- 235000002991 Coptis groenlandica Nutrition 0.000 description 8
- 229910021645 metal ion Inorganic materials 0.000 description 7
- 238000006722 reduction reaction Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010970 precious metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 238000002604 ultrasonography Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- OFLNEVYCAMVQJS-UHFFFAOYSA-N 2-n,2-n-diethylethane-1,1,1,2-tetramine Chemical compound CCN(CC)CC(N)(N)N OFLNEVYCAMVQJS-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical class OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-L L-tartrate(2-) Chemical compound [O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O FEWJPZIEWOKRBE-JCYAYHJZSA-L 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000796 flavoring agent Substances 0.000 description 1
- 235000019634 flavors Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000001457 metallic cations Chemical class 0.000 description 1
- 238000005649 metathesis reaction Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229960004418 trolamine Drugs 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/073—Displacement plating, substitution plating or immersion plating, e.g. for finish plating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
电路板的铜印制导线需要一种具有良好的抗腐蚀性并且适合于多重可焊性与结合性的涂层，使得可向它们装配电子元件。通过具有自催化沉积镍的中间层的层体系实现了这些性能，其中在该中间层上已通过电荷交换沉积了钯层。为了确保可靠的粘附强度、低空隙度和良好的均匀性，用于钯层沉积的镀浴包含铜化合物。为了使钯层钝化，可向该层体系提供通过电荷交换和/或自催化地沉积的最后金层。
Description
本发明涉及一种用于在金属表面上沉积钯层的方法和用于实施该方法的镀浴。
在电子工业中，使用了大量的具有有机基体(印刷电路)和无机基体(玻璃/陶瓷基底)的电路板。通常籍助位于电路板上的铜印制导线建立已装配的电子元件之间的电连接。为了在电路板的平面上获得电子元件与金属接触面之间的可靠连接，有必要给接触面附加提供一个或更多的金属和/或有机覆盖层。在这里，利用镀覆材料的物理化学性能，来满足在元件组装的加工性能和完整组件的功能性能方面对整个层结构提出的要求。
制备这些最后层的各种方法是已知的。特定方法的选择取决于所需的功能和方法的费用。由包含金属盐的溶液的金属沉积需要负电荷，其通过还原使带正电荷的金属离子转变成零价态即金属形式。在电解或电镀金属沉积的情况中，这借助于外部电源进行。
在工业实践中，对于金属最后表面的沉积，不仅已建立电解方法，而且特别已建立无电镀覆方法。或者通过电荷交换反应或者来自化学还原剂提供沉积所必需的电荷。无电镀覆方法由此不需要外部电源连接。因此可灵活地设置电路的布置。另外，由于不含有外部电流的方法更加均匀的层分布，基本上能够更好地获得更加致密和更加复杂的电路设计。
由于它们对本发明的重要性，在表1中比较了这两种无电镀覆方法，即通过电荷交换进行镀覆和通过自催化(化学还原)进行镀覆连同它们最广泛的术语。
表1：借助钯作为例子的不含有外部电流的沉积方法的比较
| 沉积通过 | |
| 自催化 | 电荷交换 |
| 沉积反应 | |
| Pd++R→Pd0+R+ | Pd++Me0→Pd0+Me+ |
| R：有机或无机、非金属还原剂 | Me0：比钯隋性小，是基底或辅助阳极例如Cu、Ni或Ag |
| 德文术语 | |
| - chemisch Palladium(化学钯)- stromlos Palladium(无电镀钯)- reduktiv Palladium(还原钯)- autokatalytisch Palladium(自催化钯) | - Ladungsaustauschverfahren(电荷交换方法)- Sudpalladium(浸没钯)- Zementationsverfahren(粘结方法)- Verdrngungsverfahren(置换方法)- (Ionenaustauschverfahren)(离子交换方法) |
| 英文术语 | |
| - electroless palladium(非电镀的钯)- autocatalytic palladium(自催化钯) | - immersion palladium(浸渍钯)- strike palladium(预镀钯)- displacement reactiOn(置换反应) |
对于本发明的目的，术语通过自催化的沉积和通过电荷交换的沉积用于这两种方法。
在通过自催化进行沉积的情况中，通过具有还原作用的附加组分R还原存在于镀浴内的金属阳离子并且使其沉积。
当使用自催化镀浴时，总是存在由金属离子的还原所造成的电解液自发分解的风险，甚至在准备操作期间。已经尝试通过添加适当的镀浴组份(络合剂+稳定剂)阻遏这种自发分解并且调节镀浴稳定性与电解液活性的最佳比例。
在理想情况下，金属离子被唯一地还原沉积在待镀覆的金属功能表面上。抑制了不希望的自发分解反应，即非功能表面例如容器壁、加热设备和管道系统上以及电路板的非金属组件(露出的基础材料面或有机覆盖材料如焊接掩模)上的金属沉积。
在电荷交换方法中，与自催化方法的情况不同，电解液中金属离子的沉积不需要还原剂。金属离子的还原所需的电子来自基底材料或中间层。基底或中间层的非贵重材料(例如Cu、Ni、Ag和相应的合金)在镀覆处理期间溶解，相应的金属离子进入到溶液内，而作为离子存在于溶液中的贵重金属吸收释放的电子且以金属形式沉积在基底材料或中间层上。这种方法的重要方面是这样的事实，即当已沉积足够厚和致密的更贵重金属的层时，电荷交换迟早会终止，使得基底材料不能进一步溶解。通常可获得的最大层厚度为几nm至约1μm，其取决于基底材料的类型与表面质量并且取决于电解液的组成。
用于在具有所需的多重可焊性的高质量电路板上的最后表面的最普遍的无电镀覆方法是，通过电荷交换沉积锡和银和自催化镍(合金)/浸没镀金(sudgold)方法。该单独体系的方法及原料的具体优点及缺点的平衡在关于生产规模的这些方法之一的选择和使用中起重要作用。
然而，如果电路板的最后表面和基底面上电子组件的连接元件必须满足关于连接的功能和可靠性的增加的要求时，必须使用可选择的层体系。因此，始终复杂的和更高集成的电子元件常常需要在同一电路板表面上的各种构造与组装技术的组合，以便在随后的连接平面上能够使电解开纠结最优化。除了对于不同的和多用途的焊接方法(波焊和回流焊)的最后层加工性能及对于粘附性之外，对于与铝线和/或金线结合的适宜性也是特别重要。
线结合是一种微压焊接方法，其中通过压力以及温度和/或超声，使同样的或不同的材料以固态彼此连接。
适合于这种目的的镀覆体系通常包含作为扩散阻挡层的镍或镍合金的层结构和含有贵金属的最后层，特别是基于金、银和/或钯的层。
为了满足对表面上焊接与结合的组合提出的要求分布，目前有两种在市场上已进行了测试的镀覆方法，通过该方法，有可能通过超声结合可靠地加工铝线，以及通过热超声结合可靠地加工金线。
-自催化(化学)镍/浸没镀金，接着自催化沉积金来加厚金层至所需的层厚度(为了能够制备可靠的金线结合，金的厚度通常为0.5μm)。
-自催化镍，接着自催化沉积钯(直到0.5μm)，最后通过电荷交换方法沉积金以保护钯不受由于其高反应性引起的化学变化的影响。
不仅对于包含粗铝线的负荷电源线，而且对于用于支撑材料上IC(芯片)的连接的细铝或金线，两种层体系均有具有良好的可焊性和结合性的多功能表面。然而，自催化贵金属方法(金或钯)的使用对于该层的生产者意味着更加复杂的方法。此外，这两种层体系需要较厚的贵金属层，其对整个层体系的成本具有相应的影响。
用于在印刷电路上制备多功能表面的自催化方法另外具有如下缺点：
-较高的制造复杂性，以便获得具有高质量镀覆结果的可靠镀浴操作。
-由于发生的反应机制，电解液的组成较复杂。因为所采用的化学品的使用和消耗，用于使用这些自催化方法的加工的最终费用相应较高。
-为了获得所需的多功能涂层性能(特别是与金线的可靠热超声结合)，高的层厚度已由最终客户(＝元件装配工)指定。作为功能涂层的贵金属的使用对整个工艺成本有显著的影响。
EP 0 701 281 A1描述了一种具有可结合涂层的基底，用于通过热超声方法对金线的结合。该涂层包含镍或镍合金层、含钯层和金或金合金层的组合。用化学方法(无电镀地)或通过电镀沉积该层。没有更加确切地描述该沉积方法。
EP 1 319 734 A1描述了用于以牢固粘附金层无电镀覆金属的镀覆方法。通过用钯层预镀金属确保了金层的良好粘附强度。例如通过电荷交换由浸渍镀浴沉积钯层。例如在US 5,178,745和US 5,212,138中描述了这种浸渍或预镀(strike)镀浴，并且用于结合层的沉积及用于引发随后镍的无电镀沉积。
本发明的目的是提供一种用于在功能金属表面上沉积钯层的方法，其适合于在同一基底表面上各种构造与组装技术的组合，并且避免了现有技术的前述缺点。
通过用于向基底金属上镀覆包含镍或镍合金层、钯层和如果需要时的金或金合金层的功能涂层的方法解决了该问题，其中自催化地沉积镍或镍合金层，通过电荷交换沉积钯层，并且通过电荷交换或自催化地再次沉积最后的金或金合金层，其中用于钯层沉积的镀浴不仅包含钯盐，而且包含元素铜、铊、硒和碲中的至少一种元素的且优选铜的无机化合物。
基底金属通常形成电路板的印制导线，并且通常选自铜和铜合金。然而，任何其它传导材料例如银或银合金基本上也有可能作为基底材料。
在对表面的热负荷性和对于铝线结合的适宜性有最高要求的焊接用途中，已成功地测试了根据本发明的层结构，该层结构仅由自催化地镀覆的镍或镍合金层和来自电荷交换方法的作为最后层且没有最后镀金的钯层组成。这里的一个优点是通过具有良好扩散阻挡作用的钯保护镍不被氧化。
所提出的方法在贵金属的沉积中无需自催化工艺步骤。而是，通过利用了新配置的钯镀浴的纯粹电荷交换方法使钯沉积到镍或镍合金中间层上。
通过由水性溶液电荷交换钯的沉积是已知的。通常，该溶液由无机或有机酸及相应的钯盐组成。在电子技术领域中，它们优选用于活化铜层或银层，以便引发随后实施的镍的自催化沉积。
然而，这些已知的钯镀浴不适合在已有的镍合金层(自催化镀覆)上沉积具有所需的多功能性的钯层。而是，在由已知镀浴在镍或其合金上电荷交换钯时沉积了不均匀的无粘附性的高孔层，该层其质量不能满足关于可焊性、结合性或腐蚀行为改善方面的要求。
令人惊奇地发现，只有当向钯镀浴中不仅添加钯盐而且添加元素铜、铊、硒和碲中的至少一种的无机化合物时，能够满足关于多重可焊性和结合性的要求。优选的是使用铜化合物，特别是硫酸铜。作为这种添加物的结果，在通常为自催化镍的中间层上获得了具有低空隙度的牢固粘附的光学均匀的薄钯层。然而，在完成的层体系中通过常见的标准分析方法(例如SEM-EDX)不能够检测到添加物本身。
用于通过电荷交换沉积钯层的钯镀浴优选包含至少一种选自硫酸钯、硝酸钯、氯化钯和乙酸钯的具有无机或有机阴离子的钯盐，并且还包含含有选自硫酸、硝酸、磷酸和盐酸的至少一种矿物质酸的酸性基质。优选的是使用无氯组分。
通过电解液中钯与矿物质酸的摩尔比，可调节在表面的可靠功能所必需的质量方面的电解液的活性及其沉积行为。在1∶500至1∶2000的钯与矿物质酸的摩尔比下获得了良好的结果。
在室温至70℃、优选25℃至50℃的范围内的镀浴温度下可进行钯层的沉积。镀浴的pH取决于选取的钯与矿物质酸的摩尔比。在上面所示的摩尔比下，pH通常在0至4的酸性范围并且因此更易于与电路板的材料相容。pH优选为0-2。
其形成的钯层的厚度取决于钯镀浴的作用时间。使用1至20分钟的作用时间能够沉积出具有低空隙度和良好均匀性的钯层。这里的层厚度在几纳米至100nm的范围内，优选为10-80nm，特别为10-40nm。
在用于通过电荷交换在镍或镍-磷合金层上沉积钯层的钯镀浴的实施方案中，镀浴优选具有以下组成：
a)10-1000mg/l、特别是10-500mg/l的钯，其来自选自硫酸钯、硝酸钯和乙酸钯的具有无机或有机阴离子的至少一种钯盐，
b)5-500g/l、特别是10-200g/l的选自硫酸、硝酸和磷酸的至少一种矿物质酸和
c)1-200mg/l、特别是2-50mg/l的元素铜、铊、硒和碲的至少一种，其来自这些元素的无机化合物。
为了改善钯镀浴的稳定性，可向镀浴中添加对镍和/或钯有络合作用的特定组分。向镀浴中添加的这种添加物的实例是各种具有和不具有功能巯基的羟基羧酸例如柠檬酸、酒石酸或2-巯基乙酸，特殊的胺化合物例如三乙醇胺、三氨乙基胺或五亚乙基六胺，以及已知的用于金属离子络合的EDTA衍生物(例如已知的Titriplex化合物)。优选向钯镀浴中添加1-200g/l、特别是2-50g/l浓度的络合剂。
在实际组装过程之前、甚至在电路板的热老化之后的许多焊接和结合行为研究深刻地证明，通过本发明的方法在铜印制导线上制备的层体系对氧化和在单个层之间的相互扩散有优异的稳定性，其中该层体系包含其上通过电荷交换沉积了钯的镍或镍合金中间层，和如果需要时厚度小于0.1μm的最后薄金涂层。这使得根据本发明沉积的层体系特别适合于使用金线的热超声结合方法。
可由常规电荷交换镀浴沉积任选的具有大于99％的纯度的金层，并且另外可通过已知的自催化方法使其加厚至所需的厚度。
本发明人进行的关于有害气体对根据本发明沉积的层体系的腐蚀行为的影响的另外研究表明，与现有技术的纯粹自催化镍/金层相比较，当在自催化镍上将电荷交换方法用于钯时，结果取得显著的改进。
根据本发明在镍上通过电荷交换镀覆的薄钯层具有低的空隙度，并且形成了良好的阻挡镍扩散进入到任选的金层内的扩散阻挡层。相反，没有向电荷交换镀浴中添加元素铜、铊、硒和碲的至少一种的无机化合物时，则没有获得钯层的满意的粘附力和阻挡作用。
实施例1：
通过本发明的方法使层体系镍/钯/金沉积到电路板的铜印制导线上。
通过商品镀浴自催化地沉积具有约5μm厚度的镍层。对于随后通过电荷交换的钯的沉积，使用包含100mg/l作为硫酸钯的钯、50g/l的硫酸、10mg/l作为硫酸铜的铜和10mg/l柠檬酸的镀浴。钯与硫酸的摩尔比由此为约1∶540。该镀浴的pH小于1。在室温下5、10和15分钟的钯镀浴作用时间之后，在镍中间层上获得了具有低空隙度的牢固粘附的均匀层。最后，通过电荷交换将具有＜0.1μm厚度的金覆盖层镀覆在这些层上。
完成的层体系显示出与铝线和金线的优异的多重可焊性和结合性，甚至在提高的热应力下(例如在155℃下4小时)。
实施例2：
使用包含100mg/l的作为硫酸钯的钯、100g/l的磷酸和50mg/l的作为硫酸铜的铜的钯镀浴重复实施例1。钯与磷酸的摩尔比由此为约1∶1100。该镀浴具有＜1的pH。这种镀浴也给出了如同实施例1中的积极层性能。
Claims (11)
1.一种在基底金属上镀覆功能涂层的方法，其中功能涂层从金属表面开始包含使用适当的镀浴各自沉积的镍或镍合金层、钯层和如果需要时的金或金合金层，其特征在于，自催化地沉积镍或镍合金层，通过电荷交换沉积钯层并且同样地通过电荷交换或自催化地沉积金或金合金层，其中用于钯层沉积的镀浴不仅包含钯盐，而且包含元素铜、铊、硒和碲中的至少一种的无机化合物。
2.权利要求1所述的方法，其特征在于，用于通过电荷交换沉积钯层的镀浴包含至少一种选自硫酸钯、硝酸钯、氯化钯和乙酸钯的具有无机或有机阴离子的钯盐，并且还包含含有选自硫酸、硝酸、磷酸和盐酸的至少一种矿物质酸的酸基质。
3.权利要求2所述的方法，其特征在于，钯与矿物质酸的摩尔比为1∶500-1∶2000。
4.权利要求3所述的方法，其特征在于，在室温至70℃范围内的镀浴温度下和0-4的pH值下进行钯层的沉积。
5.权利要求4的方法，其特征在于，在25-50℃的镀浴温度下进行钯层的沉积。
6.前述权利要求任一项所述的方法，其特征在于，用于钯的镀浴作用时间为1-20分钟。
7.权利要求1所述的方法，其特征在于，基底金属形成电路板的印制导线并且选自铜或铜合金或其它传导材料。
8.权利要求1所述的方法，其特征在于，镍合金是镍/硼、镍/磷、镍/轶/磷、镍/磷/钨、镍/钴/磷或镍/钨合金。
9.权利要求1所述的方法，其特征在于，由常规的电荷交换镀浴沉积具有大于99％的纯度的金层，并且另外通过已知的自催化方法使其进一步加厚至所需的厚度。
10.用于通过前述权利要求任一项所述的方法在镍层上通过电荷交换沉积钯层的钯镀浴，其特征在于该镀浴包含以下组分：
a)10-1000mg/l的钯，其来自选自硫酸钯、硝酸钯和乙酸钯的具有无机或有机阴离子的至少一种钯盐，
b)5-500g/l的选自硫酸、硝酸和磷酸的至少一种矿物质酸和
c)1-200mg/l的元素铜、铊、硒和碲的至少一种，其来自这些元素的无机化合物。
11.权利要求9所述的钯镀浴，其特征在于，其包含1-200g/l的用于镍和/或钯的络合剂，该络合剂选自具有和不具有功能巯基的羟基羧酸，和胺化合物，以改善电解液的沉积性能和镀浴稳定性。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102005001388.0 | 2005-01-12 | ||
| DE102005001388 | 2005-01-12 | ||
| PCT/EP2006/000164 WO2006074902A2 (de) | 2005-01-12 | 2006-01-11 | Verfahren zur abscheidung von palladiumschichten und palladiumbad hierfür |
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| CN101115865A true CN101115865A (zh) | 2008-01-30 |
| CN101115865B CN101115865B (zh) | 2010-09-15 |
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| US (1) | US20080138528A1 (zh) |
| EP (1) | EP1838897B1 (zh) |
| JP (1) | JP4792045B2 (zh) |
| KR (1) | KR20070118073A (zh) |
| CN (1) | CN101115865B (zh) |
| HK (1) | HK1114131A1 (zh) |
| WO (1) | WO2006074902A2 (zh) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102482780A (zh) * | 2009-11-10 | 2012-05-30 | 多杜科有限公司 | 沉积适用于将电线粘结在印刷电路板导体上的钯层的方法及所述方法中使用的钯浴 |
| CN103857826A (zh) * | 2011-10-12 | 2014-06-11 | 安美特德国有限公司 | 无电钯镀浴组合物 |
| CN103898490A (zh) * | 2014-04-11 | 2014-07-02 | 深圳市荣伟业电子有限公司 | 高可靠性型化学镀钯液及无氰化学镍钯金加工方法 |
| CN104854260A (zh) * | 2012-12-05 | 2015-08-19 | 德国艾托特克公司 | 在贵金属电极上制造可线接合和可焊接表面的方法 |
| CN105296974A (zh) * | 2015-08-27 | 2016-02-03 | 中国科学院兰州化学物理研究所 | 一种镀钯液及使用其在铜表面镀钯的方法 |
| CN106460182A (zh) * | 2014-04-10 | 2017-02-22 | 安美特德国有限公司 | 镀浴组合物和用于钯的无电镀覆的方法 |
| CN107447208A (zh) * | 2017-06-23 | 2017-12-08 | 安庆师范大学 | 一种利用化学镀‑置换制备Pd‑Ni‑Fe‑P合金膜的方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102605359A (zh) * | 2011-01-25 | 2012-07-25 | 台湾上村股份有限公司 | 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺 |
| JP7185999B2 (ja) | 2017-10-06 | 2022-12-08 | 上村工業株式会社 | 無電解パラジウムめっき液 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1030545A (en) * | 1964-04-28 | 1966-05-25 | Int Nickel Ltd | Process and solutions for coating metals and alloys |
| US3385754A (en) * | 1965-02-11 | 1968-05-28 | West Virginia Pulp & Paper Co | Stock distribution system |
| US3684534A (en) * | 1970-07-06 | 1972-08-15 | Hooker Chemical Corp | Method for stabilizing palladium containing solutions |
| US4424241A (en) * | 1982-09-27 | 1984-01-03 | Bell Telephone Laboratories, Incorporated | Electroless palladium process |
| FR2652822B1 (fr) * | 1989-10-11 | 1993-06-11 | Onera (Off Nat Aerospatiale) | Bain a l'hydrazine pour le depot chimique de platine et/ou de palladium, et procede de fabrication d'un tel bain. |
| US5178745A (en) * | 1991-05-03 | 1993-01-12 | At&T Bell Laboratories | Acidic palladium strike bath |
| US5882736A (en) * | 1993-05-13 | 1999-03-16 | Atotech Deutschland Gmbh | palladium layers deposition process |
| GB9425031D0 (en) * | 1994-12-09 | 1995-02-08 | Alpha Metals Ltd | Printed circuit board manufacture |
| US6911230B2 (en) * | 2001-12-14 | 2005-06-28 | Shipley Company, L.L.C. | Plating method |
| US6709980B2 (en) * | 2002-05-24 | 2004-03-23 | Micron Technology, Inc. | Using stabilizers in electroless solutions to inhibit plating of fuses |
-
2006
- 2006-01-11 WO PCT/EP2006/000164 patent/WO2006074902A2/de active Application Filing
- 2006-01-11 KR KR1020077018432A patent/KR20070118073A/ko not_active Application Discontinuation
- 2006-01-11 US US11/813,539 patent/US20080138528A1/en not_active Abandoned
- 2006-01-11 JP JP2007550745A patent/JP4792045B2/ja not_active Expired - Fee Related
- 2006-01-11 EP EP06700446.5A patent/EP1838897B1/de not_active Not-in-force
- 2006-01-11 CN CN2006800043937A patent/CN101115865B/zh not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102482780A (zh) * | 2009-11-10 | 2012-05-30 | 多杜科有限公司 | 沉积适用于将电线粘结在印刷电路板导体上的钯层的方法及所述方法中使用的钯浴 |
| CN102482780B (zh) * | 2009-11-10 | 2014-12-03 | 多杜科有限公司 | 沉积适用于将电线粘结在印刷电路板导体上的钯层的方法及所述方法中使用的钯浴 |
| CN103857826A (zh) * | 2011-10-12 | 2014-06-11 | 安美特德国有限公司 | 无电钯镀浴组合物 |
| CN103857826B (zh) * | 2011-10-12 | 2016-06-29 | 安美特德国有限公司 | 无电钯镀浴组合物 |
| CN104854260A (zh) * | 2012-12-05 | 2015-08-19 | 德国艾托特克公司 | 在贵金属电极上制造可线接合和可焊接表面的方法 |
| CN104854260B (zh) * | 2012-12-05 | 2018-02-09 | 德国艾托特克公司 | 在贵金属电极上制造可线接合和可焊接表面的方法 |
| CN106460182A (zh) * | 2014-04-10 | 2017-02-22 | 安美特德国有限公司 | 镀浴组合物和用于钯的无电镀覆的方法 |
| CN106460182B (zh) * | 2014-04-10 | 2019-07-09 | 安美特德国有限公司 | 镀浴组合物和用于钯的无电镀覆的方法 |
| CN103898490A (zh) * | 2014-04-11 | 2014-07-02 | 深圳市荣伟业电子有限公司 | 高可靠性型化学镀钯液及无氰化学镍钯金加工方法 |
| CN105296974A (zh) * | 2015-08-27 | 2016-02-03 | 中国科学院兰州化学物理研究所 | 一种镀钯液及使用其在铜表面镀钯的方法 |
| CN107447208A (zh) * | 2017-06-23 | 2017-12-08 | 安庆师范大学 | 一种利用化学镀‑置换制备Pd‑Ni‑Fe‑P合金膜的方法 |
| CN107447208B (zh) * | 2017-06-23 | 2020-04-10 | 安庆师范大学 | 一种利用化学镀-置换制备Pd-Ni-Fe-P合金膜的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101115865B (zh) | 2010-09-15 |
| WO2006074902A3 (de) | 2006-08-31 |
| JP4792045B2 (ja) | 2011-10-12 |
| HK1114131A1 (en) | 2008-10-24 |
| EP1838897B1 (de) | 2014-04-30 |
| EP1838897A2 (de) | 2007-10-03 |
| US20080138528A1 (en) | 2008-06-12 |
| KR20070118073A (ko) | 2007-12-13 |
| JP2008527175A (ja) | 2008-07-24 |
| WO2006074902A2 (de) | 2006-07-20 |
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