CN101068901B - 用于化学机械抛光浆料的辅助剂 - Google Patents

用于化学机械抛光浆料的辅助剂 Download PDF

Info

Publication number
CN101068901B
CN101068901B CN2005800410698A CN200580041069A CN101068901B CN 101068901 B CN101068901 B CN 101068901B CN 2005800410698 A CN2005800410698 A CN 2005800410698A CN 200580041069 A CN200580041069 A CN 200580041069A CN 101068901 B CN101068901 B CN 101068901B
Authority
CN
China
Prior art keywords
polyelectrolyte
ethylenically unsaturated
graft type
unsaturated monomers
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2005800410698A
Other languages
English (en)
Chinese (zh)
Other versions
CN101068901A (zh
Inventor
李基罗
金种珌
李政熹
洪政填
洪瑛晙
金鲁马
李安娜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Corp
Original Assignee
LG Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Chemical Co Ltd filed Critical LG Chemical Co Ltd
Priority claimed from PCT/KR2005/004592 external-priority patent/WO2006071063A1/en
Publication of CN101068901A publication Critical patent/CN101068901A/zh
Application granted granted Critical
Publication of CN101068901B publication Critical patent/CN101068901B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN2005800410698A 2004-12-29 2005-12-28 用于化学机械抛光浆料的辅助剂 Active CN101068901B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
KR10-2004-0114824 2004-12-29
KR1020040114824 2004-12-29
KR20040114824 2004-12-29
KR10-2005-0113758 2005-11-25
KR1020050113758 2005-11-25
KR1020050113758A KR100786950B1 (ko) 2004-12-29 2005-11-25 Ｃｍｐ 슬러리용 보조제
PCT/KR2005/004592 WO2006071063A1 (en) 2004-12-29 2005-12-28 Adjuvant for chemical mechanical polishing slurry

Publications (2)

Publication Number Publication Date
CN101068901A CN101068901A (zh) 2007-11-07
CN101068901B true CN101068901B (zh) 2012-05-09

Family

ID=37168609

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800410698A Active CN101068901B (zh) 2004-12-29 2005-12-28 用于化学机械抛光浆料的辅助剂

Country Status (4)

Country Link
JP (1) JP4712813B2 (ja)
KR (1) KR100786950B1 (ja)
CN (1) CN101068901B (ja)
TW (1) TWI320055B (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100786948B1 (ko) * 2005-12-08 2007-12-17 주식회사 엘지화학 연마 선택비 조절제 및 이를 함유한 ｃｍｐ 슬러리
KR100786949B1 (ko) * 2005-12-08 2007-12-17 주식회사 엘지화학 연마 선택도 조절 보조제 및 이를 함유한 ｃｍｐ 슬러리
KR100832993B1 (ko) * 2006-04-14 2008-05-27 주식회사 엘지화학 Ｃｍｐ 슬러리용 보조제
CN101946309A (zh) * 2008-02-18 2011-01-12 Jsr株式会社 化学机械研磨用水系分散体以及化学机械研磨方法
US8822339B2 (en) 2009-10-13 2014-09-02 Lg Chem, Ltd. Slurry composition for CMP, and polishing method
JP5637500B2 (ja) * 2011-02-01 2014-12-10 三菱レイヨン株式会社 ビニル系ポリマーの製造方法及びビニル系ポリマー
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
KR101353315B1 (ko) * 2013-08-07 2014-01-21 소문식 컷팅 휠용 조성물 및 이를 포함하는 컷팅 휠
KR102475282B1 (ko) 2017-03-29 2022-12-07 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물
CN111378973A (zh) * 2018-12-28 2020-07-07 安集微电子科技（上海）股份有限公司 一种化学机械抛光液及其应用
CN112872916B (zh) * 2020-12-28 2023-03-10 富联裕展科技(深圳)有限公司 抛光系统及抛光方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1289811A (zh) * 1999-09-27 2001-04-04 不二见美国股份有限公司 抛光组合物
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US6824579B2 (en) * 2000-05-24 2004-11-30 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4744656B2 (ja) * 1998-10-08 2011-08-10 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法
JP4555936B2 (ja) * 1999-07-21 2010-10-06 日立化成工業株式会社 Ｃｍｐ研磨液
KR100539983B1 (ko) * 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1289811A (zh) * 1999-09-27 2001-04-04 不二见美国股份有限公司 抛光组合物
US6824579B2 (en) * 2000-05-24 2004-11-30 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP

Also Published As

Publication number Publication date
CN101068901A (zh) 2007-11-07
KR100786950B1 (ko) 2007-12-17
KR20060076190A (ko) 2006-07-04
TWI320055B (en) 2010-02-01
TW200704760A (en) 2007-02-01
JP4712813B2 (ja) 2011-06-29
JP2008521242A (ja) 2008-06-19

Similar Documents

Publication Publication Date Title
CN101068901B (zh) 用于化学机械抛光浆料的辅助剂
CN101326256B (zh) 用于控制抛光选择性的辅助剂以及包含该辅助剂的化学机械抛光浆料
TW584639B (en) Polymer synthesis and films therefrom
EP1994112B1 (en) Cmp slurry and method for polishing semiconductor wafer using the same
CN1084539A (zh) 改进的金属颜料定向水基涂料组合物
CN101415525B (zh) Cmp浆料的辅助剂
EP1844122B1 (en) Adjuvant for chemical mechanical polishing slurry
JP2801929B2 (ja) ポリオールポリアクリレート分散剤
CN101326257B (zh) 用于控制抛光选择性的辅助剂以及包含该辅助剂的化学机械抛光浆料
JP2017530215A (ja) 有機／無機複合粒子を含む化学機械研磨組成物
JP4292117B2 (ja) 化学機械研磨用水系分散体及び化学機械研磨方法
WO1992003485A1 (fr) Nouvelle resine fluoree et materiau d'enduction a base de celle-ci
US20110160379A1 (en) Coating composition to obtain surface effects
JPS63112670A (ja) 水性被覆用組成物
WO2022224356A1 (ja) 研磨液、研磨液セット及び研磨方法
CN110023433A (zh) 用于抛光有机膜的浆料组合物和使用其抛光有机膜的方法
KR100326231B1 (ko) 환경 친화형 아크릴-스티렌계 공중합체와 이를 이용한 광택제 조성물
JPH11106457A (ja) グラフト共重合体、グラフト重合体の製造方法及び塗料
CN109517104A (zh) 一种外墙涂料用乳液及其制备方法
JPH07238253A (ja) 複合樹脂微粒子の水性分散体
JPH02233703A (ja) 硬化性組成物

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant