CN101044629A - 具有低阻抗欧姆接触的ⅲa族氮化物半导体器件 - Google Patents
具有低阻抗欧姆接触的ⅲa族氮化物半导体器件 Download PDFInfo
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- CN101044629A CN101044629A CNA200580030403XA CN200580030403A CN101044629A CN 101044629 A CN101044629 A CN 101044629A CN A200580030403X A CNA200580030403X A CN A200580030403XA CN 200580030403 A CN200580030403 A CN 200580030403A CN 101044629 A CN101044629 A CN 101044629A
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- gallium nitride
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- semiconductor device
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- indium gallium
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 150000004767 nitrides Chemical class 0.000 title abstract description 38
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 184
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 160
- 229910052738 indium Inorganic materials 0.000 claims abstract description 95
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 94
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229910017083 AlN Inorganic materials 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052716 thallium Inorganic materials 0.000 claims description 6
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000010287 polarization Effects 0.000 description 27
- 239000000463 material Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 230000002269 spontaneous effect Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011469 building brick Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 241000272525 Anas platyrhynchos Species 0.000 description 1
- 241000951490 Hylocharis chrysura Species 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- YWMAPNNZOCSAPF-UHFFFAOYSA-N Nickel(1+) Chemical compound [Ni+] YWMAPNNZOCSAPF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000031068 symbiosis, encompassing mutualism through parasitism Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Abstract
Description
Claims (1)
- 权 利 要 求1.一种氮化镓基半导体器件, 包括:P型氮化镓基层;于所述 P型氮化镓层上直接形成的个压应变的岛状氮化镓铟 (InxGai_xN), 其中 0<χ<1; 及电极, 形成于所述压应变的岛状氮化镓铟上。2.如权利要求 1所述的氮化镓基半导体器件, 其特征在于, 所述压应变的岛状氮化 镓铟包含纳米颗粒大小的岛状氮化镓铟。3.如权利要求 1所述的氮化镓基半导体器件, 其特征在于, 所述岛状氮化镓铟在 P 型氮化镓层上的覆盖率为 10%至 100%。4.如权利要求 2所述的氮化镓基半导体器件, 其特征在于, 所述岛状氮化镓铟的横 向尺寸在 lnm-200nm之间。5.如权利要求 2所述的氮化镓基半导体器件, 其特征在于, 所述岛状氮化镓铟的纵 向尺寸在 0.5nm-10nm之间。6.如权利要求 4所述的氮化镓基半导体器件, 其特征在于, 所述岛状氮化镓铟的纵 向尺寸在 0.5nm-10nm之间。7.如权利要求 1所述的氮化镓基半导体器件, 其特征在于, 所述岛状氮化镓铟与 P 型氮化镓基层之间为物理接触。8.如权利要求 1所述的氮化镓基半导体器件, '其特征在于, 所述氮化镓半导体器件 包括发光二极管、 激光二极管及晶体管。9.如权利要求 1所述的氮化镓基半导体器件, 其特征在于, 所述 P型氮化镓基层包 括氮化镓、 氮化铝、 氮化镓铝、 氮化镓铟及氮化镓铟铝。10.如权利要求 1所述的氮化镓基半导体器件,其特征在于,所述电极由选自镍、金、 铝、 钛、 铂、 钯、 银、 铊及铜的至少一种金属组成。11.如权利要求 1所述的氮化镓基半导体器件, 其特征在于, 所述电极由选自镍 /金、 钯 /金、 铊 /金及铜 /金的至少一种合金组成。12.如权利要求 1所述的氮化镓基半导体器件,其特征在于,所述电极由至少一种透 明的导电氧化物组成, 所述氧化物至少含有铟、 锡、 镉及锌之一。13.—种氮化镓基半导体器件制造方法, 包括- 于基板上形成 P型氮化镓基层;于所述 P型氮化镓基层上直接形成多个压应变的岛状氮化镓铟, 其中 0<χ≤1 ; 并且于所述压应变的岛状氮化镓铟上形成电极。14.如权利要求 13所述的氮化镓基半导体器件制造方法, 其特征在于, 所述压应变 的岛状氮化镓铟系以仿晶方式生长于该 P型氮化镓层上。15.如权利要求 14所述的氮化镓基半导体器件制造方法, 其特征在于, 以有机金属 化学气相沉积法形成所述压应变的岛状氮化镓铟。16.如权利要求 13所述的氮化镓基半导体器件制造方法, 其特征在于, 所述岛状氮 化镓铟在 P型氮化镓层的覆盖率为 10%至 100%。17.如权利要求 13所述的氮化镓基半导体器件制造方法, 其特征在于, 所述 P型氮 化镓基层包括氮化镓、 氮化铝、 氮化镓铝、 氮化镓铟及氮化镓铟铝。18.如权利要求 13所述的氮化镓基半导体器件制造方法, 其特征在于, 所述基板包 括蓝宝石、 碳化硅、 氧化锌、 硅、 磷化镓及砷化镓任一种。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/936,496 US7943949B2 (en) | 2004-09-09 | 2004-09-09 | III-nitride based on semiconductor device with low-resistance ohmic contacts |
US10/936,496 | 2004-09-09 |
Publications (2)
Publication Number | Publication Date |
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CN101044629A true CN101044629A (zh) | 2007-09-26 |
CN100563033C CN100563033C (zh) | 2009-11-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB200580030403XA Expired - Fee Related CN100563033C (zh) | 2004-09-09 | 2005-09-09 | 具有低阻抗欧姆接触的ⅲa族氮化物半导体器件 |
Country Status (6)
Country | Link |
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US (1) | US7943949B2 (zh) |
KR (1) | KR100879414B1 (zh) |
CN (1) | CN100563033C (zh) |
HK (1) | HK1109242A1 (zh) |
TW (2) | TWM274645U (zh) |
WO (1) | WO2006026932A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102347412A (zh) * | 2010-07-29 | 2012-02-08 | 果尚志 | Ⅲ族-氮化物发光二极管与其形成方法 |
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US20080283854A1 (en) * | 2007-05-01 | 2008-11-20 | The Regents Of The University Of California | Light emitting diode device layer structure using an indium gallium nitride contact layer |
TWI341600B (en) * | 2007-08-31 | 2011-05-01 | Huga Optotech Inc | Light optoelectronic device and forming method thereof |
US7791101B2 (en) * | 2008-03-28 | 2010-09-07 | Cree, Inc. | Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices |
KR100954729B1 (ko) | 2008-06-12 | 2010-04-23 | 주식회사 세미콘라이트 | InN 양자섬 캡핑층을 구비한 질화물계 발광소자 |
DE102008052405A1 (de) * | 2008-10-21 | 2010-04-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
KR100992772B1 (ko) * | 2008-11-20 | 2010-11-05 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US9029866B2 (en) | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
US9064947B2 (en) | 2009-08-04 | 2015-06-23 | Gan Systems Inc. | Island matrixed gallium nitride microwave and power switching transistors |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
US9437785B2 (en) * | 2009-08-10 | 2016-09-06 | Cree, Inc. | Light emitting diodes including integrated backside reflector and die attach |
DE102009060747A1 (de) | 2009-12-30 | 2011-07-07 | OSRAM Opto Semiconductors GmbH, 93055 | Halbleiterchip |
EP2559064A4 (en) | 2010-04-13 | 2018-07-18 | GaN Systems Inc. | High density gallium nitride devices using island topology |
KR101646664B1 (ko) * | 2010-05-18 | 2016-08-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 |
CN102780156B (zh) * | 2011-05-13 | 2014-05-07 | 中国科学院物理研究所 | 一种氮化铝固体激光器及其制备方法 |
CN102956781B (zh) * | 2011-08-31 | 2015-03-11 | 新世纪光电股份有限公司 | 发光元件及其制作方法 |
KR102130488B1 (ko) | 2012-02-23 | 2020-07-07 | 센서 일렉트로닉 테크놀로지, 인크 | 반도체에 대한 오믹 접촉부 |
TWI505500B (zh) * | 2012-06-07 | 2015-10-21 | Lextar Electronics Corp | 發光二極體及其製造方法 |
KR20140086624A (ko) * | 2012-12-28 | 2014-07-08 | 삼성전자주식회사 | 질화물 반도체 발광 소자 |
US20150255589A1 (en) * | 2014-03-10 | 2015-09-10 | Toshiba Corporation | Indium-containing contact and barrier layer for iii-nitride high electron mobility transistor devices |
KR102373677B1 (ko) * | 2015-08-24 | 2022-03-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
WO2019111161A1 (en) * | 2017-12-05 | 2019-06-13 | King Abdullah University Of Science And Technology | Forming iii-nitride alloys |
KR102544296B1 (ko) * | 2018-09-13 | 2023-06-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 표면발광레이저 소자 및 이를 구비한 표면발광레이저 장치 |
CN112951955B (zh) * | 2021-01-26 | 2023-03-14 | 华灿光电(浙江)有限公司 | 紫外发光二极管外延片及其制备方法 |
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JP3325479B2 (ja) * | 1997-01-30 | 2002-09-17 | 株式会社東芝 | 化合物半導体素子及びその製造方法 |
US6369403B1 (en) * | 1999-05-27 | 2002-04-09 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layer |
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US6847057B1 (en) * | 2003-08-01 | 2005-01-25 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices |
US20050236636A1 (en) * | 2004-04-23 | 2005-10-27 | Supernova Optoelectronics Corp. | GaN-based light-emitting diode structure |
TWI239668B (en) * | 2004-10-21 | 2005-09-11 | Formosa Epitaxy Inc | Structure of gallium-nitride based (GaN-based) light-emitting diode with high luminance |
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2005
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- 2005-09-09 KR KR1020077005788A patent/KR100879414B1/ko not_active IP Right Cessation
- 2005-09-09 CN CNB200580030403XA patent/CN100563033C/zh not_active Expired - Fee Related
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Cited By (2)
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CN102347412A (zh) * | 2010-07-29 | 2012-02-08 | 果尚志 | Ⅲ族-氮化物发光二极管与其形成方法 |
CN102347412B (zh) * | 2010-07-29 | 2013-08-14 | 果尚志 | Ⅲ族-氮化物发光二极管与其形成方法 |
Also Published As
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KR20070058499A (ko) | 2007-06-08 |
WO2006026932A1 (fr) | 2006-03-16 |
TW200610187A (en) | 2006-03-16 |
KR100879414B1 (ko) | 2009-01-19 |
CN100563033C (zh) | 2009-11-25 |
US20060049417A1 (en) | 2006-03-09 |
HK1109242A1 (en) | 2008-05-30 |
TWM274645U (en) | 2005-09-01 |
US7943949B2 (en) | 2011-05-17 |
TWI240442B (en) | 2005-09-21 |
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